Obras completas

UANL

Aparición, revelación y milagros de la Virgen Santísima en un monte de los Alpes llamado la Saleta el día 19 de septiembre de 1846

UANL

Sermón predicado en la función religiosa que el Ilmo., Sr. Arzobispo y V. cabildo de Guadalajara celebran anualmente en honor de la Santísima Virgen de Guadalupe en su insigue Colegiata de México y reseñade la mencionada función

UANL

Vida de la Santísima Virgen

UANL

Rubricas del misal romano reformado para que con facilidad puedan instruirse en ellas todos los eclesiásticos

UANL

Verdadera historia de los pontífices o sea refutación del cuadernoin titulado Despertador de las fanáticos. Estracto de los retratos de varios Papas

UANL

Manual de las efemérides y anualidades mas notables desde la creación hasta nuestros días, comprendiendo la indicación histórica y cronológica de mas de 9000 acontecimientos

UANL

Oratio in funere illmi. d.d.d. Petri Espinosa et Davalos

Con : Oración fúnebre pronunciada por el canónigo Florencio Parga en las exequias verificadas en la Santa Iglesia Catedral de Guadalajara, el 28 de febrero de 1876, con motivo de la traslación de los restos mortales de México a esta capital.

Efecto del bicarbonato de sodio y un cultivo de levadura viva (Saccharomyces cerevisiae) en raciones para corderos sobre el consumo, digestabilidad, parametros ruminales y características de la canal

Tesis (Doctorado en Ciencias Veterinarias con énfasis en Producción Animal) UANL

Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

Competing tunneling and capacitive paths in Co-ZrO2 granular thin films

The ac electrical response is studied in thin films composed of well-defined nanometric Co particles embedded in an insulating ZrO2 matrix which tends to coat them, preventing the formation of aggregates. In the dielectric regime, ac transport originates from the competition between interparticle capacitive Cp and tunneling Rt channels, the latter being thermally assisted. This competition yields an absorption phenomenon at a characteristic frequency 1/(RtCp), which is observed in the range 1010 000 Hz. In this way, the effective ac properties mimic the universal response of disordered dielectric materials. Temperature and frequency determine the complexity and nature of the ac electrical paths, which have been successfully modeled by an Rt-Cp network.

Enhanced electron-electron correlations in nanometric epitaxial SrRuO3 epitaxial films

Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.

Magnetic field effect on quantum corrections to the low-temperature conductivity in mettalic perovskite oxides

The transport and magnetotransport properties of the metallic and ferromagnetic SrRuO3 (SRO) and the metallic and paramagnetic LaNiO3 (LNO) epitaxial thin films have been investigated in fields up to 55 T at temperatures down to 1.8 K . At low temperatures both samples display a well-defined resistivity minimum. We argue that this behavior is due to the increasing relevance of quantum corrections to the conductivity (QCC) as temperature is lowered; this effect being particularly relevant in these oxides due to their short mean free path. However, it is not straightforward to discriminate between contributions of weak localization and renormalization of electron-electron interactions to the QCC through temperature dependence alone. We have taken advantage of the distinct effect of a magnetic field on both mechanisms to demonstrate that in ferromagnetic SRO the weak-localization contribution is suppressed by the large internal field leaving only renormalized electron-electron interactions, whereas in the nonmagnetic LNO thin films the weak-localization term is relevant.