Anelastic behavior due to interstitial oxygen in SmBa(2)Cu(3)O7-delta

The composite SmBa2Cu3O7-delta (Sm-123), obtained by the substitution of the ion Y for Sm in the very well known and studied YBa2Cu3O7-delta (Y-123), is potentially attractive for better understanding superconductivity mechanisms and for its applications as electronic devices. Sm-123 samples show higher critical temperatures than Y-123 ones do and a larger solubility of Sm in Ba-Cu-O solvent, which makes their growth process faster. When oxygen is present interstitially, it strongly affects the physical properties of the material. The dynamics of oxygen can be investigated by anelastic spectroscopy measurements, a powerful technique for the precise determination of the oscillation frequency and the internal friction when atomic jumps are possible. Anelastic spectroscopy allows determining the elasticity modulus (related to the oscillation frequency) and the elastic energy loss (related to the internal friction) as a function of the temperature. The sample was also investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and electric resistivity. The results obtained show a thermally activated relaxation structure composed by at least 3 relaxation processes. These processes may be attributed to the jumps of oxygen atoms present of the Cu-O plane in the orthorhombic phase.

Structural study of copper oxide supported on a ceria-modified titania catalyst system

A structural study of CuO supported on a CeO2-TiO2 system was undertaken using X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) techniques. The results of XRD revealed the presence of only two phases, TiO2 anatase and CeO2 cerianite. A trend towards smaller TiO2 crystallites was observed when cerium content increased. When the amount of cerium increased, Ti K-edge XANES analysis showed an increasing distortion of Ti sites. The results of Ce LIII-edge EXAFS showed that Ce atoms are coordinated by eight oxygen atoms at 2.32 Å. For the sample containing a small amount of cerium, the EXAFS analysis indicated that the local structure around Ce atoms was highly distorted. The catalysts presented quite different Cu K-edge XANES spectra compared to the spectra of the CuO and Cu2O reference compounds. The Cu-O mean bond length was close to that of the CuO and the Cu atoms in the catalysts are surrounded by approximately four oxygen atoms in their first shell. Copper supported on the ceria-modified titania support catalysts displayed a better performance in the methanol dehydrogenation when compared to copper supported only on titania or on ceria. © 2002 Plenum Publishing Corporation.

Entwicklung einer Methode mittels hochauflösender ICP-MS zur Bestimmung von Siliciumspuren in anorganischen und organischen Matrices sowie von Siloxanen in Geweben

Deutsch:Schwerpunkt dieser Arbeit war die Entwicklung einer Methode zur Spurenbestimmung von Silicium in organischen und anorganischen Matrices unter Verwendung der massenspektrometrischen Isotopenverdünnungsanalyse (MSIVA) an einem hochauflösenden induktiv gekoppelten Plasma-Massenspektrometer (HR-ICP-MS). Zusätzlich zur Elementspurenbestimmung wurde eine GC/HR-ICP-MS Kopplung entwickelt, die zur Analyse linearer und cyclischer Siloxane verwendet wurde.Die hier entwickelte Analysenmethode erlaubt Nachweisgrenzen für Silicium sowohl in organischen als auch in anorganischen Matrices im oberen ng/g-Bereich und ergab für die im Rahmen dieser Arbeit analysierten Proben Reproduzierbarkeiten von < 20%. Durch einfache Verdünnung nach der Probenvorbereitung in Verbindung mit dem sehr empfindlichen Detektionsverfahren sowie der internen Standardisierung mittels MSIVA erlaubt das Verfahren eine präzise Bestimmung von Silicium in jeglicher Matrix. Neben der Schnelligkeit und Einfachheit eignet sich die hier entwickelte Methode besonders für die Routineanalytik. Die gute Reproduzierbarkeit und der Vergleich mit Ergebnissen von zwei Interlaborstudien unterstreicht zusätzlich die Fähigkeit präzise und richtige Ergebnisse zur Zertifizierung an Standardreferenzmaterialien bezüglich des Siliciums im Spurenbereich zu liefern.Neben dem Gesamtgehalt von Silicium konnten medizinisch relevante Siliciumverbindungen analysiert und quantifiziert werden. Hierbei wurden niedermolekulare Polydimethlysiloxane (PDMS) untersucht, die als Nebenprodukte vor allem in Brustimplantaten auftreten. Grundlage für die Bestimmung dieser Siliciumspezies ist die Kopplung eines hochauflösenden ICP-MS an einen Gaschromatographen. Der hohe Ionisierungsgrad des ICP, gerade unter trockenen Plasmabedingungen, und der elementspezifische und sehr empfindliche massenspektrometrische Detektor erlauben in Verbindung mit dem GC die Bestimmung von Siloxanen bis in den pg/g-Bereich. Aus der Bestimmung des Gesamtgehalts an Silicium und der Bestimmung des Gehalts an den untersuchten Siliciumverbindungen können Vergleiche gemacht werden. Die Analyse beider Parameter ist mit Hilfe in dieser Arbeit entwickelten Methode möglich.Zusätzlich zur Siliciumbestimmung wurde der Gehalt an Platin in Humanproben analysiert, da bei der Herstellung der Füllung von Siliconimplantaten Platinkatalysatoren verwendet werden.

Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films

The need of efficient (fast and low consumption) optoelectronic devices has always been the driving force behind the investigation of materials with new or improved properties. To be commercially attractive, however, these materials should be compatible with our current micro-electronics industry and/or telecommunications system. Silicon-based compounds, with their matured processing technology and natural abundance, partially comply with such requirements-as long as they emit light. Motivated by these issues, this work reports on the optical properties of amorphous Si films doped with Fe. The films were prepared by sputtering a Si+Fe target and were investigated by different spectroscopic techniques. According to the experimental results, both the Fe concentration and the thermal annealing of the samples induce changes in their atomic structure and optical-electronic properties. In fact, after thermal annealing at similar to 750 degrees C, the samples partially crystallize with the development of Si and/or beta-FeSi(2) crystallites. In such a case, certain samples present light emission at similar to 1500 nm that depends on the presence of beta-FeSi(2) crystallites and is very sensitive to the annealing conditions. The most likely reasons for the light emission (or absence of it) in the considered Fe-doped Si samples are presented and discussed in view of their main structural-electronic characteristics. (C) 2011 Elsevier Ltd. All rights reserved.

The formation and properties of some cyclic compounds of silicon an dtin

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Synthesis and electronic properties of luminescent silicon nanocrystals and copper indium sulphide quantum dots

In the last decades, nanomaterials, and in particular semiconducting nanoparticles (or quantum dots), have gained increasing attention due to their controllable optical properties and potential applications. Silicon nanoparticles (also called silicon nanocrystals, SiNCs) have been extensively studied in the last years, due to their physical and chemical properties which render them a valid alternative to conventional quantum dots. During my PhD studies I have planned new synthetical routes to obtain SiNCs functionalised with molecules which could ameliorate the properties of the nanoparticle. However, this was certainly challenging, because SiNCs are very susceptible to many reagents and conditions that are often used in organic synthesis. They can be irreversibly quenched in the presence of alkalis, they can be damaged in the presence of oxidants, they can modify their optical properties in the presence of many nitrogen-containing compounds, metal complexes or simple organic molecules. If their surface is not well-passivated, the oxygen can introduce defect states, or they can aggregate and precipitate in several solvents. Therefore, I was able to functionalise SiNCs with different ligands: chromophores, amines, carboxylic acids, poly(ethylene)glycol, even ameliorating functionalisation strategies that already existed. This thesis will collect the experimental procedures used to synthesize silicon nanocrystals, the strategies adopted to functionalise effectively the nanoparticle with different types of organic molecules, and the characterisation of their surface, physical properties and luminescence (mostly photogenerated, but also electrochemigenerated). I also spent a period of 7 months in Leeds (UK), where I managed to learn how to synthesize other cadmium-free quantum dots made of copper, indium and sulphur (CIS QDs). During my last year of PhD, I focused on their functionalisation by ligand exchange techniques, yielding the first example of light-harvesting antenna based on those quantum dots. Part of this thesis is dedicated to them.

One-dimensional Silicon And Germanium Nanostructures With No Carbon Analogues.

In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures.

Semiconducting Sn(3)O(4) nanobelts: Growth and electronic structure

The study of structures based on nonstoichiometric SnO(2-x) compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn(3)O(4) nanobelts, which were successfully grown by a carbothermal evaporation process of SnO(2) powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character.

ACCUMULATION AND TRANSLOCATION OF SILICON IN RICE AND BEAN PLANTS USING THE 30SI STABLE ISOTOPE

The 30Si silicon isotope stable was used for assessing the accumulation and translocation of Si in rice and bean plants grown in labeled nutritive solution. The isotopic silicon composition in plant materials was determined by mass spectrometry (IRMS) using the method based on SiF4 formation. Considering the total-Si added into nutritive solutions, the quantity absorbed by plants was near to 51% for rice and 15% for bean plants. The accumulated amounts of Si per plant were about 150g in rice and 8.6g in bean. Approximately 70% of the total-Si accumulated was found in leaves. At presented experimental conditions, the results confirmed that once Si is accumulated in the old parts of rice and bean plant tissues it is not redistributed to new parts, even when Si is not supplied to plants from nutritive solution.

Isotopic determination of silicon by mass spectrometry in plants and soils labeled with Si-30

A method for isotopic determination of silicon by mass spectrometry in plants and soils labeled with Si-30 is reported. The development of this method is for use with studies involving the physiological process of absorption, transport, and redistribution of Si in the soil-plant system by use of the stable isotope Si-30 as a tracer. The procedure leads to SiF4 formation, and the isotopic determination of Si was based on the measurements of the (SiF3+)-Si-28, (SiF3+)-Si-29, and (SiF3+)-Si-30 signals. Relative standard deviation of Si-30 abundance measurements (n = 6) were lower than 0.1%, and the detection limit was 0.5 mg Si (dry mass).

THE ROLE OF COLLOIDAL SILICON DIOXIDE IN THE ENHANCEMENT OF THE DRYING OF HERBAL PREPARATIONS IN SUSPENDED STATE

Recently, some research groups have been developing studies aiming to apply spouted beds of inert particles for production of dried herbal extracts. However, mainly due to their complex composition, several problems arise during the spouted bed drying of herbal extracts such as bed instability, product accumulation, particle agglomeration, and bed collapse. The addition of drying carriers, like colloidal silicon dioxide, to the extractive solution can minimize these unwanted effects. The aim of this work was to study the influence of the addition of colloidal silicon dioxide on enhancement of the performance of the drying of hydroalcoholic extract of Bauhinia forficata Link on a spouted bed of inert particles. The physical properties of the herbal extract and of its mixture with colloidal silicon dioxide at several concentrations (20% to 80% related to solids content) were quantified by determination of the surface tension, rheological properties, density, pH, and contact angles with the inert surfaces. Drying performance was evaluated through determination of the elutriation ratio, product recovery ratio, and product accumulation. The product was characterized through determination of the thermal degradation of bioactive compounds and product moisture content. The results indicated that the rheological properties of the extracts and their preparations, the contact angle with inert material, and the work of adhesion play important roles in the spouted bed drying of herbal extracts. Higher concentration of the drying carrier significantly improved the spouted bed drying performance.

Silicon in plant disease control

All essential nutrients can affect the incidence and severity of plant diseases. Although silicon (Si) is not considered as an essential nutrient for plants, it stands out for its potential to decrease disease intensity in many crops. The mechanism of Si action in plant resistance is still unclear. Si deposition in plant cell walls raised the hypothesis of a possible physical barrier to pathogen penetration. However, the increased activity of phenolic compounds, polyphenol oxidases and peroxidases in plants treated with Si demonstrates the involvement of this element in the induction of plant defense responses. The studies examined in this review address the role of Si in disease control and the possible mechanisms involved in the mode of Si action in disease resistance in plants.

Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets

CONSPECTUS: Two-dimensional (2D) crystals derived from transition metal dichalcogenides (TMDs) are intriguing materials that offer a unique platform to study fundamental physical phenomena as well as to explore development of novel devices. Semiconducting group 6 TMDs such as MoS2 and WSe2 are known for their large optical absorption coefficient and their potential for high efficiency photovoltaics and photodetectors. Monolayer sheets of these compounds are flexible, stretchable, and soft semiconductors with a direct band gap in contrast to their well-known bulk crystals that are rigid and hard indirect gap semiconductors. Recent intense research has been motivated by the distinct electrical, optical, and mechanical properties of these TMD crystals in the ultimate thickness regime. As a semiconductor with a band gap in the visible to near-IR frequencies, these 2D MX2 materials (M = Mo, W; X = S, Se) exhibit distinct excitonic absorption and emission features. In this Account, we discuss how optical spectroscopy of these materials allows investigation of their electronic properties and the relaxation dynamics of excitons. We first discuss the basic electronic structure of 2D TMDs highlighting the key features of the dispersion relation. With the help of theoretical calculations, we further discuss how photoluminescence energy of direct and indirect excitons provide a guide to understanding the evolution of the electronic structure as a function of the number of layers. We also highlight the behavior of the two competing conduction valleys and their role in the optical processes. Intercalation of group 6 TMDs by alkali metals results in the structural phase transformation with corresponding semiconductor-to-metal transition. Monolayer TMDs obtained by intercalation-assisted exfoliation retains the metastable metallic phase. Mild annealing, however, destabilizes the metastable phase and gradually restores the original semiconducting phase. Interestingly, the semiconducting 2H phase, metallic 1T phase, and a charge-density-wave-like 1T' phase can coexist within a single crystalline monolayer sheet. We further discuss the electronic properties of the restacked films of chemically exfoliated MoS2. Finally, we focus on the strong optical absorption and related exciton relaxation in monolayer and bilayer MX2. Monolayer MX2 absorbs as much as 30% of incident photons in the blue region of the visible light despite being atomically thin. This giant absorption is attributed to nesting of the conduction and valence bands, which leads to diversion of optical conductivity. We describe how the relaxation pathway of excitons depends strongly on the excitation energy. Excitation at the band nesting region is of unique significance because it leads to relaxation of electrons and holes with opposite momentum and spontaneous formation of indirect excitons.

Configurational statistical model for the damaged structure of silicon oxide after ion implantation

A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.