Filter assisted wavelength conversion with quantum-dot SOAs

The nonlinear operation regimes of quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated and the ideal filter providing the best all-optical wavelength conversion efficiency is derived theoretically. Results are confirmed by experiments with Q2-factors amounting to 16 dB.

Comparative analysis of BER estimation methods in numerical simulation of 40-Gb/s RZ-DPSK transmission with in-line SOAs

Applying direct error counting, we compare the accuracy and evaluate the validity of different available numerical approaches to the estimation of the bit-error rate (BER) in 40-Gb/s return-to-zero differential phase-shift-keying transmission. As a particular example, we consider a system with in-line semiconductor optical amplifiers. We demonstrate that none of the existing models has an absolute superiority over the others. We also reveal the impact of the duty cycle on the accuracy of the BER estimates through the differently introduced Q-factors. © 2007 IEEE.

Simultaneous dual channel phase regeneration in SOAs

For the first time we demonstrate simultaneous suppression of phase distortion on two independent 10.7 Gbit/s DPSK modulated signal wavelengths using semiconductor optical amplifiers, realizing a compact phase sensitive amplifier with low power consumption.

Symmetric operating point for increasing the extinction ratio of semiconductor based optical loop mirrors

Terahertz optical asymmetric demultiplexors (TOADs) use a semiconductor optical amplifier in an interferometer to create an all-optical switch and have potential uses in many optical networking applications. Here we demonstrate and compare experimentally a novel and simple method of dramatically increasing the extinction ratio of the device using a symmetrical configuration as compared to a ‘traditional’ configuration. The new configuration is designed to suppress the occurrence of self-switching in the device thus allowing signal pulses to be used at higher power levels. Using the proposed configuration an increase in extinction ratio of 10 dB has been measured on the transmitted port whilst benefiting from an improved input signal power handling capability.

On the theory of the modulation instability in optical fiber and laser amplifiers

The modulation instability (MI) in optical fiber amplifiers and lasers with anomalous dispersion leads to CW beam breakup and the growth of multiple pulses. This can be both a detrimental effect, limiting the performance of amplifiers, and also an underlying physical mechanism in the operation of MI-based devices. Here we revisit the analytical theory of MI in fiber optical amplifiers. The results of the exact theory are compared with the previously used adiabatic approximation model, and the range of applicability of the latter is determined. The same technique is applicable to the study of spatial MI in solid state laser amplifiers and MI in non-uniform media. © 2011 SPIE.

On the theory of the modulation instability in optical fiber amplifiers

The modulation instability (MI) in optical fiber amplifiers and lasers with anomalous dispersion leads to cw radiation breakup. This can be both a detrimental effect limiting the performance of amplifiers and an underlying physical mechanism in the operation of MI-based devices. Here we revisit the analytical theory of MI in fiber optical amplifiers. The results of the exact theory are compared with the previously used adiabatic approximation model, and the range of applicability of the latter is determined. © 2010 Optical Society of America.

Optical Transducers Based on Amorphous Si/SiC Photodiodes

Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.

Electroluminiscence and optical amplification in silicon nanostructures: towards the integration of electronics and photonics

This line of research of my group intends to establish a Silicon technological platform in the field of photonics allowing the development of a wide set of applications. Particularly, what is still lacking in Silicon Photonics is an efficient and integrable light source such an LED or laser. Nanocrystals in silicon oxide or nitride matrices have been recently demonstrated as competitive materials for both active components (electrically and optically driven light emitters and optical amplifiers) and passive ones (waveguides and modulators). The final goal is the achievement of a complete integration of electronic and optical functions in the same CMOS chip. The first part of this paper will introduce the structural and optical properties of LEDs fabricated from silicon nanostructures. The second will treat the interaction of such nanocrystals with rare-earth elements (Er), which lead to an efficient hybrid system emitting in the third window of optical fibers. I will present the fabrication and assessment of optical waveguide amplifiers at 1.54 ¿m for which we have been able to demonstrate recently optical gain in waveguides made from sputtered silicon suboxide materials.

Effects in the population inversion of3H4 level in Tm, Tm-Tb and Tm-Eu doped germanate glasses for amplifiers applications

The population inversion of the Tm3+ in GLKZ glass involved in the 1470 nm emission (3H4 → 3F 4) as a function of Tb (or Eu) concentration was calculated by computational simulation for a CW laser pumping at 792 nm. These calculations were performed using the experimental Tm→Tb an Tm→Eu transfer rates and the spectroscopic parameters of the Tm (0.1 mol %) system. The result shows that 0.2 mol % (Tb3+) and 0.4 mol % of Eu3+ ions propitiate best population inversion of Tm3+ (0.1 mol %) maximizing the amplification coefficient of germanate (GLKZ) glass when operating as laser intensity amplification at 1470 nm. Besides the effective deactivation of the 3F4 level, the presence of Tb3+ or Eu 3+ ions introduce a depopulation of the 3H4 emitting level by means of a cross relaxation process with Tm3+ ions. In spite of this, the whole effect is verified to be benefic for using Tm-doped GLKZ glass codoped with Tb3+ or Eu3+ as a suitable material for confectioning optical amplifiers that operates in the S-band for telecommunication.

Optimizing Amplifier Placements in a Multiwavelength Optical LAN/MAN: The Unequally Powered Wavelengths Case

Optical networks based on passive-star couplers and employing WDM have been proposed for deployment in local and metropolitan areas. These networks suffer from splitting, coupling, and attenuation losses. Since there is an upper bound on transmitter power and a lower bound on receiver sensitivity, optical amplifiers are usually required to compensate for the power losses mentioned above. Due to the high cost of amplifiers, it is desirable to minimize their total number in the network. However, an optical amplifier has constraints on the maximum gain and the maximum output power it can supply; thus, optical amplifier placement becomes a challenging problem. In fact, the general problem of minimizing the total amplifier count is a mixed-integer nonlinear problem. Previous studies have attacked the amplifier-placement problem by adding the “artificial” constraint that all wavelengths, which are present at a particular point in a fiber, be at the same power level. This constraint simplifies the problem into a solvable mixed integer linear program. Unfortunately, this artificial constraint can miss feasible solutions that have a lower amplifier count but do not have the equally powered wavelengths constraint. In this paper, we present a method to solve the minimum amplifier- placement problem, while avoiding the equally powered wavelength constraint. We demonstrate that, by allowing signals to operate at different power levels, our method can reduce the number of amplifiers required.

Routing and Wavelength Assignment (RWA) with Power Considerations In All- Optical Wavelength-Routed Networks

Routing and wavelength assignment (RWA) is an important problem that arises in wavelength division multiplexed (WDM) optical networks. Previous studies have solved many variations of this problem under the assumption of perfect conditions regarding the power of a signal. In this paper, we investigate this problem while allowing for degradation of routed signals by components such as taps, multiplexers, and fiber links. We assume that optical amplifiers are preplaced. We investigate the problem of routing the maximum number of connections while maintaining proper power levels. The problem is formulated as a mixed-integer nonlinear program and two-phase hybrid solution approaches employing two different heuristics are developed

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V.

Secure transmission of information by digital chaotic signals

Protecting signals is one of the main tasks in information transmission. A large number of different methods have been employed since many centuries ago. Most of them have been based on the use of certain signal added to the original one. When the composed signal is received, if the added signal is known, the initial information may be obtained. The main problem is the type of masking signal employed. One possibility is the use of chaotic signals, but they have a first strong limitation: the need to synchronize emitter and receiver. Optical communications systems, based on chaotic signals, have been proposed in a large number of papers. Moreover, because most of the communication systems are digital and conventional chaos generators are analogue, a conversion analogue-digital is needed. In this paper we will report a new system where the digital chaos is obtained from an optically programmable logic structure. This structure has been employed by the authors in optical computing and some previous results in chaotic signals have been reported. The main advantage of this new system is that an analogue-digital conversion is not needed. Previous works by the authors employed Self-Electrooptical Effect Devices but in this case more conventional structures, as semiconductor laser amplifiers, have been employed. The way to analyze the characteristics of digital chaotic signals will be reported as well as the method to synchronize the chaos generators located in the emitter and in the receiver.

Produção e caracterização de guias de onda dopados com terras-raras contendo nanopartículas semicondutoras.

O presente trabalho tem como objetivo estudar a produção e caracterização de filmes finos do tipo GeO2-Bi2O3 (BGO) produzidos por sputtering-RF com e sem nanopartículas (NPs) semicondutoras, dopados e codopados com íons de Er3+ ou Er3+/Yb3+ para a produção de amplificadores ópticos. A produção de guias de onda do tipo pedestal baseados nos filmes BGO foi realizada a partir de litografia óptica seguida por processo de corrosão por plasma e deposição física a vapor. A incorporação dos íons de terras-raras (TRs) foi verificada a partir dos espectros de emissão. Análises de espectroscopia e microscopia foram indispensáveis para otimizar os parâmetros dos processos para a construção dos guias de onda. Foi observado aumento significativo da luminescência do Er3+ (região do visível e do infravermelho), em filmes finos codopados com Er3+/Yb3+ na presença de nanopartículas de Si. As perdas por propagação mínimas observadas foram de ~1,75 dB/cm para os guias pedestal em 1068 nm. Para os guias dopados com Er3+ foi observado aumento significativo do ganho na presença de NPs de silício (1,8 dB/cm). O ganho óptico nos guias de onda amplificadores codopados com Er3+/Yb3+ e dopados com Er3+ com e sem NPs de silício também foi medido. Ganho de ~8dB/cm em 1542 nm, sob excitação em 980 nm, foi observado para os guias pedestal codopados com Er3+/Yb3+ (Er = 4,64.1019 átomos/cm3, Yb = 3,60.1020 átomos/cm3) com largura de 80 µm; para os guias codopados com concentração superior de Er3+/Yb3+ (Er = 1,34.1021 átomos/cm3, Yb = 3,90.1021 átomos/cm3) e com NPs de Si, foi observado aumento do ganho óptico de 50% para guia com largura de 100 µm. Os resultados apresentados demonstram que guias de onda baseados em germanatos, com ou sem NPs semicondutoras, são promissores para aplicações em dispositivos fotônicos.

Optical networks to span the globe

The world's communications infrastructure is poised to undergo a revolution. Networks that send light pulses through optical fibres and optical amplifiers will change the way in which we communicate across the planet.