977 resultados para Rutile TiO2


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Solar ultraviolet (UV) radiation causes a range of skin disorders as well as affecting vision and the immune system. It also inhibits development of plants and animals. UV radiation monitoring is used routinely in some locations in order to alert the population to harmful solar radiation levels. There is ongoing research to develop UV-selective-sensors [1–3]. A personal, inexpensive and simple UV-selective-sensor would be desirable to measure UV intensity exposure. A prototype of such a detector has been developed and evaluated in our laboratory. It comprises a sealed two-electrode photoelectrochemical cell (PEC) based on nanocrystalline TiO2. This abundant semiconducting oxide, which is innocuous and very sta-ble, is the subject of intense study at present due to its application in dye sensitized solar cells (DSSC) [4]. Since TiO2 has a wide band gap (EG = 3.0 eV for rutile and EG = 3.2 eV for anatase), it is inher-ently UV-selective, so that UV filters are not required. This further reduces the cost of the proposed photodetector in comparison with conventional silicon detectors. The PEC is a semiconductor–electrolyte device that generates a photovoltage when it is illuminated and a corresponding photocur-rent if the external circuit is closed. The device does not require external bias, and the short circuit current is generally a linear function of illumination intensity. This greatly simplifies the elec-trical circuit needed when using the PEC as a photodetector. DSSC technology, which is based on a PEC containing nanocrystalline TiO2 sensitized with a ruthenium dye, holds out the promise of solar cells that are significantly cheaper than traditional silicon solar cells. The UV-sensor proposed in this paper relies on the cre-ation of electron–hole pairs in the TiO2 by UV radiation, so that it would be even cheaper than a DSSC since no sensitizer dye is needed. Although TiO2 has been reported as a suitable material for UV sensing [3], to the best of our knowledge, the PEC configuration described in the present paper is a new approach. In the present study, a novel double-layer TiO2 structure has been investigated. Fabrication is based on a simple and inexpensive technique for nanostructured TiO2 deposition using microwave-activated chemical bath deposition (MW-CBD) that has been reported recently [5]. The highly transparent TiO2 (anatase) films obtained are densely packed, and they adhere very well to the transparent oxide (TCO) substrate [6]. These compact layers have been studied as contacting layers in double-layer TiO2 structures for DSSC since improvement of electron extraction at the TiO2–TCO interface is expected [7]. Here we compare devices incorporating a single mesoporous nanocrystalline TiO2 structure with devices based on a double structure in which a MW-CBD film is situated between the TCO and the mesoporous nanocrystalline TiO2 layer. Besides improving electron extraction, this film could also help to block recombination of electrons transferred to the TCO with oxidized species in the electrolyte, as has been reported in the case of DSSC for compact TiO2 films obtained by other deposition tech-niques [8,9]. The two types of UV-selective sensors were characterized in detail. The current voltage characteristics, spectral response, inten-sity dependence of short circuit current and response times were measured and analyzed in order to evaluate the potential of sealed mesoporous TiO2-based photoelectrochemical cells (PEC) as low cost personal UV-photodetectors.

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Composite TiO2/acid leached serpentine tailings (AST) were synthesized through the hydrolysis–deposition method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energydispersive X-ray spectrometry (EDS), Fourier-transform infrared spectroscopy (FT-IR), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and surface area measurement (BET). The XRD analysis showed that TiO2 coated on the surface of acid leached serpentine tailings was mixed crystal phases of rutile and anatase, the grain size of which is 10–30 nm. SEM, TEM, and EDS analysis exhibited that nano-TiO2 particles were deposited on the surface and internal cavities of acid leaching serpentine tailings. The XPS and FT-IR analysis demonstrated that the coating process of TiO2 on AST was a physical adsorption process. The large specific surface area, porous structure, and plentiful surface hydroxyl group of TiO2/AST composite resulted in the high adsorption capacity of Cr(VI). The experimental results demonstrated that initial concentration of Cr(VI), the amount of the catalyst, and pH greatly influenced the removal efficiency of Cr(VI). The removal kinetics of Cr(VI) at a relative low initial concentration was fitted well with Langmuir–Hinshelwood kinetics model with R2 value of about unity. The asprepared composites exhibited strong adsorption and photocatalytic capacity for the removal of Cr(VI), and the possible photocatalytic reduction mechanism was studied. The photodecomposition of Cr(VI) was as high as 95% within 2 h, and the reusability of the photocatalysis was proven.

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Fine powders of TiO2 (rutile) with high degree of crystallinity are formed from aqueous titanium oxychloride solution under hydrothermal conditions at 160–230°C and 15–100 kg/cm2 for 1–2 hours. The anatase phase is produced from the same medium when sulfate ion impurity is present, with Image . Both these fine powders are converted to BaTiO3, SrTiO3 or CaTiO3 when suspended in Ba(OH)2 or Sr(OH)2 solution or in an aqueous slurry of carbonate-free CaO with Image , at 180–280°C and 12–65 kg/cm2 for 4–8 hours. The resulting fine powders contain monocrystallites of the perovskite phase with 0.1–1.5 μm particle size.

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The often discussed role of surface hydroxylation of TiO2 particles as an essential characterestics for their photocatalytic activity can be verified by preparing TiO2 powders by hydrothermal method since hydroxylated surface layers will be better retained on these particles formed in superheated water. Thus, fine powders of TiO2 (rutile) with high degree of crystallinity are formed from titanium oxychloride in the mixed solvent of water and 2-propanol at 160–230°C and 20–120 atm. The anatase phase is produced from the same medium when sulfate ion impurity is present, with Image . TiO2 powders are washed free of anions and 2-propanol by ultrafiltration and are Pt mounted by a photochemical method. Aqueous suspensions of both forms of TiO2 neither as such nor after Pt-loading, do not produce H2 on band gap illumination whereas, H2 is generated in presence of hole scavengers such as EDTA, TEOA, sulfite or hypophosphite. The effects of hole scavenger concentration, Pt : TiO2 ratio, particulate suspension density and the nature of hole scavengers on H2 production are presented. Platinised rutile powders are equally active as anatase in sacrificial systems.

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Atomic layer deposition was used to obtain TiO2 thin films on Si (100) and fused quartz, using a novel metal organic precursor. The films were grown at 400 degrees C, varying the amount of oxygen used as the reactive gas. X-ray diffraction showed the films to be crystalline, with a mixture of anatase and rutile phases. To investigate their optical properties, ellipsometric measurements were made in the UV-Vis-NIR range (300-1700 nm). Spectral distribution of various optical constants like refractive index (n), absorption index (k), transmittance (T), reflectance (R), absorption (A) were calculated by employing Bruggemann's effective medium approximation (BEMA) and Maxwell-Garnet effective medium approximation, in conjunction with the Cauchy and Forouhi-Bloomer (FB) dispersion relations. A layered optical model has been proposed which gives the thickness, elemental and molecular composition, amorphicity and roughness (morphology) of the TiO2 film surface and and the film/substrate interface, as a function of oxygen flow rate The spectral distribution of the optical band gap (E-g(opt)), complex dielectric constants (epsilon' and epsilon''), and optical conductivity (sigma(opt)), has also been determined.

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There are conflicting reports in the literature regarding solid solubility in the system RuO2-TiO2. To resolve this issue a few experiments were conducted in air at 1673, 1723, and 1773 K. The results show limited terminal solid solubility. There is an extended solid-state miscibility gap that intersects the decomposition curve for the RuO2-rich solid solution generating a peritectoid reaction at 1698 K. The measured equilibrium compositions of the solid solutions are used to develop a thermodynamic description of the oxide solid solution with rutile structure. Using the subregular solution model, the enthalpy of mixing can be represented by the expression, Delta H-M/J center dot mol(-1) = XTiO2XRuO2 ( 34,100X(TiO2) + 30,750X(RuO2)). The binodal and spinodal curves and T-X phase diagram in air are computed using this datum and Gibbs energy of formation of RuO2 available in the literature. The computed results suggest that equilibrium was not attained during solubility measurements at lower temperatures reported in the literature.

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This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10-3 to 10.4× 10-3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10-3 to 11.6 × 10-3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. The changes in the optical constants at higher substrate temperature have been attributed to an increase in packing density, oxygen content, and crystallinity of the films.

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In situ EXAFS and X-ray diffraction investigations of Ni/TiO2 catalysts show that NiTiO3 is formed as an intermediate during calcination of catalyst precursors prepared by the wet-impregnation method; the intermediate is not formed when ion-exchange method is used for the preparation. On hydrogen reduction, NiTiO3 gives rise to Ni particles dispersed in the TiO2(rutile) matrix. The occurrence of the anatase-rutile transformation of the TiO2 support, the formation and subsequent decomposition/reduction of NiTiO3 as well as the unique interface properties of the Ni particles are all factors of importance in giving rise to metal-support interaction. Active TiO2(anatase) prepared from gel route gives an additional species involving Ni3+.

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After annealing a continuous SiO2 film on the (001) surface of TiO2, the film dewets and then spreads to form a complex pattern. The final droplet morphology displays a densely branching morphology similar to those seen in computer-simulated models. It is proposed that Bénard-Marangoni convection cells form within the film before dewetting occurs. The formation of Bénard-Marangoni convection cells prior to dewetting results in the uniform size and spacing of the droplets on the surface. These convection cells form at temperature when the TiO2 substrate dissolves into the SiO2 thin film. The change in composition results in regions of differing surface tensions and therefore leads to the formation of the convection cells.

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Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.

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Titanium dioxide (TiO2) thin films were deposited onto p-Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80-200W. The as-deposited TiO2 films were annealed at a temperature of 1023K. The post-annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p-Si structure were determined from the capacitance-voltage and current-voltage characteristics. X-ray diffraction studies confirmed that the as-deposited films were amorphous in nature. After post-annealing at 1023K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers >160W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air-annealed Al/TiO2/p-Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p-Si (metal-insulator-semiconductor) was systematically investigated. Copyright (c) 2014 John Wiley & Sons, Ltd.

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Well-crystallized anatase and mixed (anatase-rutile) phase TiO2 thin films were deposited by DC magnetron sputtering technique at various DC powers in the range of 80-140 W. Pure anatase phase was observed in the TiO2 films deposited at low power of 80 W. Films deposited at 120 W were composed of both anatase and rutile phases. At higher power of 140 W, the films are rutile dominated and the rutile percentage increased from 0 to 82% with increase of DC power. The same results of phase change were confirmed by Raman studies. The surface morphology of the TiO2 films showed that the density of the films increased with increase of sputter power. The optical band gap of the films varied from 3.35 to 3.14 eV with increase of DC power. The photocatalytic activity of the TiO2 films increased with increasing DC power up to 120 W and after that it decreases. We found that the TiO2 films deposited at 120 W with 48% of rutile phase, exhibited high photocatalytic activity (43% of degradation) under UV light compared with other TiO2 films. After loading the optimized Ag nanoparticles on the mixed phase TiO2 films, the photocatalytic activity shifted from UV to visible region with enhancement of photocatalytic activity (55% of degradation). (C) 2015 Elsevier B.V. All rights reserved.

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Well-crystallized anatase and mixed (anatase-rutile) phase TiO2 thin films were deposited by DC magnetron sputtering technique at various DC powers in the range of 80-140 W. Pure anatase phase was observed in the TiO2 films deposited at low power of 80 W. Films deposited at 120 W were composed of both anatase and rutile phases. At higher power of 140 W, the films are rutile dominated and the rutile percentage increased from 0 to 82% with increase of DC power. The same results of phase change were confirmed by Raman studies. The surface morphology of the TiO2 films showed that the density of the films increased with increase of sputter power. The optical band gap of the films varied from 3.35 to 3.14 eV with increase of DC power. The photocatalytic activity of the TiO2 films increased with increasing DC power up to 120 W and after that it decreases. We found that the TiO2 films deposited at 120 W with 48% of rutile phase, exhibited high photocatalytic activity (43% of degradation) under UV light compared with other TiO2 films. After loading the optimized Ag nanoparticles on the mixed phase TiO2 films, the photocatalytic activity shifted from UV to visible region with enhancement of photocatalytic activity (55% of degradation). (C) 2015 Elsevier B.V. All rights reserved.

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利用射频磁控溅射法室温下在Si(100)衬底上制备了N掺杂的TiO2薄膜,并且采用x射线衍射(XRD)、X射线光电子能谱(XPS)和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2(33.3%)/Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相,薄膜结晶性良好,呈高度(211)择优取向,而在N2(50.0%)/Ar下制备的薄膜结晶性明显变差;对于N掺杂的TiO2薄膜,XPS表明部分N原子进入TiO2晶格,并且以N—Ti—O、N—O键以及间隙式N原子形式存在;透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

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abstract {The optical property, structure, surface properties (roughness and defect density) and laser-induced damage threshold (LIDT) of TiO2 films deposited by electronic beam (EB) evaporation of TiO2 (rutile), TiO2 (anatase) and TiO2 + Ta2O5 composite materials are comparatively studied. All films show the polycrystalline anatase TiO2 structure. The loose sintering state and phase transformation during evaporating TiO2 anatase slice lead to the high surface defect density, roughness and extinction coefficient, and low LIDT of films. The TiO2 + Ta2O5 composite films have the lowest extinction coefficient and the highest LIDT among all samples investigated. Guidance of selecting materials for high LIDT laser mirrors is given.}