Lightning-Induced Current and Voltage on a Rocket in the Presence of Its Trailing Exhaust Plume

This paper presents time-domain characteristics of induced current and voltage on a rocket in the presence of its exhaust plume when an electromagnetic (EM) wave generated by a nearby lightning discharge is incident on it. For the EM-field interaction with the rocket, the finite-difference time-domain technique has been used. The distributed electrical parameters, such as capacitance and inductance of the rocket and its exhaust plume, are computed using the method of moments technique. For the electrical characterization of the exhaust plume, the computational fluid dynamics technique has been used. The computed peak value of the electrical conductivity of the exhaust plume is 0.12 S/m near the exit plane and it reduces to 0.02 S/m at the downstream end. The relative permittivity varies from 0.91 to 0.99. The exhaust plume behaves as a good conductor for EM fields with frequencies less than 2.285 GHz. It has been observed that the peak value of the induced current on the rocket gets enhanced significantly in the presence of the conducting exhaust plume for the rocket and exhaust plume dimensions and parameters studied. The magnitude of the time-varying induced current at the tail is much more than that of any other section of the rocket.

Lightning-Induced Current and Voltage on a Rocket in the Presence of Its Trailing Exhaust Plume

This paper presents time-domain characteristics of induced current and voltage on a rocket in the presence of its exhaust plume when an electromagnetic (EM) wave generated by a nearby lightning discharge is incident on it. For the EM-field interaction with the rocket, the finite-difference time-domain technique has been used. The distributed electrical parameters, such as capacitance and inductance of the rocket and its exhaust plume, are computed using the method of moments technique. For the electrical characterization of the exhaust plume, the computational fluid dynamics technique has been used. The computed peak value of the electrical conductivity of the exhaust plume is 0.12 S/m near the exit plane and it reduces to 0.02 S/m at the downstream end. The relative permittivity varies from 0.91 to 0.99. The exhaust plume behaves as a good conductor for EM fields with frequencies less than 2.285 GHz. It has been observed that the peak value of the induced current on the rocket gets enhanced significantly in the presence of the conducting exhaust plume for the rocket and exhaust plume dimensions and parameters studied. The magnitude of the time-varying induced current at the tail is much more than that of any other section of the rocket.

Optimal reactive power dispatch based on voltage stability criteria in a large power system with AC/DC and FACTs devices

An algorithm for optimal allocation of reactive power in AC/DC system using FACTs devices, with an objective of improving the voltage profile and also voltage stability of the system has been presented. The technique attempts to utilize fully the reactive power sources in the system to improve the voltage stability and profile as well as meeting the reactive power requirements at the AC-DC terminals to facilitate the smooth operation of DC links. The method involves successive solution of steady-state power flows and optimization of reactive power control variables with Unified Power Flow Controller (UPFC) using linear programming technique. The proposed method has been tested on a real life equivalent 96-bus AC and a two terminal DC system under normal and contingency conditions.

Fuzzy-expert approach for voltage-reactive power dispatch

The voltage stability control problem has become an important concern for utilities transmitting power over long distances. This paper presents an approach using fuzzy set theory for reactive power control with the purpose of improving the voltage stability of a power system. To minimize the voltage deviations from pre-desired values of all the load buses, using the sensitivities with respect to reactive power control variables form the basis of the proposed fuzzy logic control (FLC). Control variables considered are switchable VAR compensators, On Load Tap Changing (OLTC) transformers and generator excitations. Voltage deviations and controlling variables are translated into fuzzy set notations to formulate the relation between voltage deviations and controlling ability of controlling devices. The developed fuzzy system is tested on a few simulated practical Indian power systems and some IEEE standard test systems. The performance of the fuzzy system is compared with conventional optimization technique and results obtained are encouraging. Results obtained for a 24 - node equivalent EHV system of part of Indian southern grid and IEEE New England 39-bus system are presented for illustration purposes. The proposed Fuzzy-Expert technique is found suitable for on-line applications in energy control centre as the solution is obtained fast with significant speedups.

DTC Technique for Induction Machine based Integrated Starter-Generator of an Automobile

This paper mainly concentrates on the application of the direct torque control (DTC) technique for the induction machine based integrated startergenerator (ISG) for automobile applications. It also discusses in brief about the higher DC bus voltage requirements in the automobiles i.e. present 14V system vs. 42V system to meet the power requirements, modes of operation of ISG, electric machine and the drive selection for the ISG,description of DTC technique, simulation and experimental results, and implementation.

A Simple Five-Level Inverter Topology for Induction Motor Drive Using Conventional Two-Level Inverters and Flying Capacitor Technique

This paper proposes a new five-level inverter topology for open-end winding induction motor (IM) drive. The popular existing circuit configurations for five-level inverter include the NPC inverter and flying capacitor topologies. Compared to the NPC inverter, the proposed topology eliminates eighteen clamping diodes having different voltage ratings in the present circuit. Moreover it requires only one capacitor bank per phase, whereas flying capacitor schemes for five level topologies require six capacitor banks per phase. The proposed topology is realized by feeding the phase winding of an open-end induction motor with two-level inverters in series with flying capacitors. The flying capacitor voltages are balanced using the switching state redundancy for full modulation range. The proposed inverter scheme is capable of producing two-level to five-level pulse width modulated voltage across the phase winding depending on the modulation range. Additionally, in case of any switch failure in the flying capacitor connection, the proposed inverter topology can be operated as a three-level inverter for full modulation range. The proposed scheme is experimentally verified on a four pole, 5hp induction motor drive.

ADC Static Characterization Using Nonlinear Ramp Signal

Static characteristics of an analog-to-digital converter (ADC) can be directly determined from the histogram-based quasi-static approach by measuring the ADC output when excited by an ideal ramp/triangular signal of sufficiently low frequency. This approach requires only a fraction of time compared to the conventional dc voltage test, is straightforward, is easy to implement, and, in principle, is an accepted method as per the revised IEEE 1057. However, the only drawback is that ramp signal sources are not ideal. Thus, the nonlinearity present in the ramp signal gets superimposed on the measured ADC characteristics, which renders them, as such, unusable. In recent years, some solutions have been proposed to alleviate this problem by devising means to eliminate the contribution of signal source nonlinearity. Alternatively, a straightforward step would be to get rid of the ramp signal nonlinearity before it is applied to the ADC. Driven by this logic, this paper describes a simple method about using a nonlinear ramp signal, but yet causing little influence on the measured ADC static characteristics. Such a thing is possible because even in a nonideal ramp, there exist regions or segments that are nearly linear. Therefore, the task, essentially, is to identify these near-linear regions in a given source and employ them to test the ADC, with a suitable amplitude to match the ADC full-scale voltage range. Implementation of this method reveals that a significant reduction in the influence of source nonlinearity can be achieved. Simulation and experimental results on 8- and 10-bit ADCs are presented to demonstrate its applicability.

In-situ power monitoring scheme and its application in dynamic voltage and threshold scaling for digital CMOS integrated circuits

An in-situ power monitoring technique for Dynamic Voltage and Threshold scaling (DVTS) systems is proposed which measures total power consumed by load circuit using sleep transistor acting as power sensor. Design details of power monitor are examined using simulation framework in UMC 90nm CMOS process. Experimental results of test chip fabricated in AMS 0.35µm CMOS process are presented. The test chip has variable activity between 0.05 and 0.5 and has PMOS VTH control through nWell contact. Maximum resolution obtained from power monitor is 0.25mV. Overhead of power monitor in terms of its power consumption is 0.244 mW (2.2% of total power of load circuit). Lastly, power monitor is used to demonstrate closed loop DVTS system. DVTS algorithm shows 46.3% power savings using in-situ power monitor.

Electrical characterization of Ba(Zr0.1Ti0.9)O-3 thin films grown by pulsed laser ablation technique

In situ annealed thin films of ferroelectric Ba(Zr0.1Ti0.9)O-3 were deposited on platinum substrates by pulsed laser ablation technique. The as grown films were polycrystalline in nature without the evidence of any secondary phases. The polarization hysteresis loop confirmed the ferroelectricity, which was also cross-checked with the capacitance-voltage characteristics. The remnant polarization was about 5.9 muC cm(-2) at room temperature and the coercive field was 45 kV. There was a slight asymmetry in the hysteresis for different polarities, which was thought to be due to the work function differences of different electrodes. The dielectric constant was about 452 and was found to exhibit low frequency dispersion that increased with frequency, This was related to the space-charge polarization. The complex impedance was plotted and this exhibited a semicircular trace, and indicated an equivalent parallel R - C circuit within the sample. This was attributed to the grain response. The DC leakage current-voltage plot was consistent with the space-charge limited conduction theory, but showed some deviation, which was explained by assuming a Poole-Frenkel type conduction to be superimposed on to the usual space-charge controlled current. (C) 2002 Elsevier Science B.V. All rights reserved.

Starting scheme for load commutated inverter-fed wound field synchronous machine using an auxiliary low-power voltage source inverter

Conventional thyristor-based load commutated inverter (LCI)-fed wound field synchronous machine operates only above a minimum speed that is necessary to develop enough back emf to ensure commutation. The drive is started and brought up to a speed of around 10-15% by a complex `dc link current pulsing' technique. During this process, the drive have problems such as pulsating torque, insufficient average starting torque, longer starting time, etc. In this regard a simple starting and low-speed operation scheme, by employing an auxiliary low-power voltage source inverter (VSI) between the LCI and the machine terminals, is presented in this study. The drive is started and brought up to a low speed of around 15% using the VSI alone with field oriented control. The complete control is then smoothly and dynamically transferred to the conventional LCI control. After the control transfer, the VSI is turned off and physically disconnected from the main circuit. The advantages of this scheme are smooth starting, complete control of torque and flux at starting and low speeds, less starting time, stable operation, etc. The voltage rating of the required VSI is very low of the order of 10-15%, whereas the current rating is dependent on the starting torque requirement of the load. The experimental results from a 15.8 hp LCI-fed wound field synchronous machine are given to demonstrate the scheme.

A cascaded discharge plasma-adsorbent technique for engine exhaust treatment

A cascaded system of electrical discharges (non-thermal plasma) and adsorption process was investigated for the removal of oxides of Nitrogen (NOx) and total hydrocarbons (THC) from an actual diesel engine exhaust. The non-thermal plasma and adsorption processes were separately studied first and then the cascaded process was studied. In this study, different types of adsorbents were used. The NOx removal efficiency was higher with plasma-associated adsorption (cascaded) process compared to the individual processes and the removal efficiency was found almost invariant in time. When associated by plasma, among the adsorbents studied, activated charcoal and MS-13X were more effective for NOx and THC removal respectively. The experiments were conducted at no load and at 50% load conditions. The plasma reactor was kept at room temperature throughout the experiment, while the temperature of the adsorbent reactor was varied. A relative comparison of adsorbents was discussed at the end.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

Compiler-Directed Frequency and Voltage Scaling for a Multiple Clock Domain

Multiple Clock Domain processors provide an attractive solution to the increasingly challenging problems of clock distribution and power dissipation. They allow their chips to be partitioned into different clock domains, and each domain’s frequency (voltage) to be independently configured. This flexibility adds new dimensions to the Dynamic Voltage and Frequency Scaling problem, while providing better scope for saving energy and meeting performance demands. In this paper, we propose a compiler directed approach for MCD-DVFS. We build a formal petri net based program performance model, parameterized by settings of microarchitectural components and resource configurations, and integrate it with our compiler passes for frequency selection.Our model estimates the performance impact of a frequency setting, unlike the existing best techniques which rely on weaker indicators of domain performance such as queue occupancies(used by online methods) and slack manifestation for a particular frequency setting (software based methods).We evaluate our method with subsets of SPECFP2000,Mediabench and Mibench benchmarks. Our mean energy savings is 60.39% (versus 33.91% of the best software technique)in a memory constrained system for cache miss dominated benchmarks, and we meet the performance demands.Our ED2 improves by 22.11% (versus 18.34%) for other benchmarks. For a CPU with restricted frequency settings, our energy consumption is within 4.69% of the optimal.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO(2) thin films by DC magnetron sputtering

Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.