Projective Limit Random Probabilities on Polish Spaces

A pivotal problem in Bayesian nonparametrics is the construction of prior distributions on the space M(V) of probability measures on a given domain V. In principle, such distributions on the infinite-dimensional space M(V) can be constructed from their finite-dimensional marginals---the most prominent example being the construction of the Dirichlet process from finite-dimensional Dirichlet distributions. This approach is both intuitive and applicable to the construction of arbitrary distributions on M(V), but also hamstrung by a number of technical difficulties. We show how these difficulties can be resolved if the domain V is a Polish topological space, and give a representation theorem directly applicable to the construction of any probability distribution on M(V) whose first moment measure is well-defined. The proof draws on a projective limit theorem of Bochner, and on properties of set functions on Polish spaces to establish countable additivity of the resulting random probabilities.

Calculation of the hourly and daily radiation incident on three step tracking planes

Mathematical formulas for estimating the hourly and daily radiation incident on planes of azimuth three step tracking and hour angle three step tracking have been derived in this paper. Based on the hourly solar radiation data of an average day in each month at Er-Lian-Hao-Te city, the hourly and monthly radiation received by planes of these two kinds of tracking have been calculated. The results show that in this district, one axis azimuth three step tracking and hour angle three step tracking could, respectively, obtain 66.5% and 63.3% higher radiation than that on the horizontal surface all year. Moreover, a two axis azimuth three step tracking plane could receive 72% more radiation than the horizontal surface. (C) 2002 Elsevier Science Ltd. All rights reserved.

Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD

A determination of {1 1 1}A and {1 1 1}B in cubic GaN(c-GaN) was investigated by X-ray diffraction technique in detail. The c-GaN films are grown on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition(MOCVD). The difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}A and {1 1 1}B planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}A and which is the {1 1 1}B planes. The lesser deviation between the ratios of /F-h k l/(2)//F-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal GaN(h-GaN) grown on c-GaN{1 1 1}A planes is higher than that on {1 1 1}B planes. The reciprocal space mappings provide additional proof that the h-GaN inclusions in c-GaN films appear as lamellar structure. (C) 2001 Published by Elsevier Science B.V.

Eliminating False Matches for the Projective Registration of Free-Form Surfaces with Small Translational Motions

Liu, Yonghuai. Eliminating False Matches for the Projective Registration of Free-Form Surfaces with Small Translational Motions. IEEE Transactions on Systems, Man and Cybernetics, Part B: Cybernetics, vol. 35, no. 3, pp. 607-624, 2005.

Quasi -symmetric designs with good blocks and intersection number one

Mavron, Vassili; McDonough, T.P.; Schrikhande, M.S., (2003) 'Quasi -symmetric designs with good blocks and intersection number one', Designs Codes and Cryptography 28(2) pp.147-162 RAE2008

Projective injections of geometries and their affine extensions

We present a general method allowing the construction geometries whose diagram is an extension of the diagram of a given geometry. Some applications of this construction process are described. © 1995 Birkhäuser Verlag.

Planes de área en matemáticas y autonomía escolar: un estudio de casos

AUTONOMÍA ESCOLAR Y PLANIFICACIÓN EN MATEMÁTICAS La autonomía escolar se estableció en Colombia en 1994, con la intención de que las instituciones educativas adaptaran el currículo a su contexto. Como consecuencia, instituciones y profesores se hicieron responsables del diseño curricular en todas las áreas, con la guía de lineamientos curriculares publicados por el gobierno. Estos diseños curriculares que se plasman en el plan de área. En este trabajo caracterizamos los planes de área de matemáticas en una muestra de conveniencia de 18 colegios de educación básica secundaria y educación media de Bogotá y sus cercanías y exploramos en qué medida se llevan a la práctica los lineamientos gubernamentales en esos documentos. Codificamos los planes de área teniendo en cuenta las cuatro componentes del currículo: el contenido, los objetivos, la metodología y la evaluación. Para cada una de estas componentes, establecimos:1. el nivel de generalidad con el que se trata, 2. los términos que las instituciones utilizan para referirse a ella y 3. la coherencia y la estructura con la que las instituciones la describen. Los resultados ponen de manifiesto la variedad de aproximaciones de las instituciones de la muestra a la planificación del área de matemáticas. Esta variedad se constata en el número de niveles de generalidad que aparecen en los documentos, en la diversidad de términos que se utilizan para referirse a cada uno de los componentes curriculares y en el nivel de detalle con que se describen. Los resultados sugieren que, en las instituciones de la muestra en las que las ideas de estándar y competencia aparecen en el plan de área, estas ideas no juegan un papel organizador del diseño curricular. Así mismo, los resultados muestran que no existe un significado compartido para los términos “estándar”, “objetivo”, “logro” o “desempeño” entre los documentos de la muestra. Adicionalmente, hemos observado que no se constata coherencia entre esta expectativa de aprendizaje y el contenido propuesto dentro de la planificación. Estos resultados nos llevan a conjeturar que, en las instituciones a las que pertenecen los documentos de la muestra, no existe una aproximación sistemática, estructurada y fundamentada a la planificación curricular.

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Silicon-on-insulator (SOI) substrates incorporating tungsten silicide ground planes (GPs) have been shown to offer the lowest reported crosstalk figure of merit for application in mixed signal integrated circuits. The inclusion of the silicide layer in the structure may lead to stress or defects in the overlying SOI layers and resultant degradation of device performance. It is therefore essential to establish the quality of the silicon on the GPSOI substrate. MOS capacitor structures have been employed in this paper to characterize these GPSOI substrates for the first time. High quality MOS capacitor characteristics have been achieved with minority carrier lifetime of similar to 0.8 ms. These results show that the substrate is suitable for device manufacture with no degradation in the silicon due to stress or metallic contamination resulting from the inclusion of the underlying silicide layer.