Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications

GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understanding of these growth behaviors is imperative if high-quality ternary InGaAs nanowires are to be realized. This report examines GaAs, InAs, and InGaAs nanowires, and how their growth may be tailored to achieve desirable material properties. GaAs and InAs nanowire growth are compared, with a view toward the growth of high-quality InGaAs nanowires with device-accessible properties. © 2011 IEEE.

Phase separation induced by Au catalysts in ternary InGaAs nanowires.

We report a novel phase separation phenomenon observed in the growth of ternary In(x)Ga(1-x)As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In(x)Ga(1-x)As nanowires high precursor flow rates generate ternary In(x)Ga(1-x)As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In(x)Ga(1-x)As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

20GHz colliding pulse mode-locking of ingaas quantum dot lasers

Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7ps, 20GHz pulses are achieved using an absorber length considerably longer than typically used in similar quantum-well lasers. © 2004 Optical Society of America.

InGaAs/InP系材料的MCVPE生长及特性研究

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正面进光InGaAs/InP SAGM APD器件的研究

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AlGaAs/GaAs,InGaAs/GaAs体系光电子材料的MBE生长及相关性质研究

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高质量InGaAs/AlGaAs应变量子阱激光器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

HEMT材料界面特性及其器件的二维数值模拟

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs,InGaAs垂直腔面发射激光器的研究及理论分析

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InGaAs/GaAs名变量子阱光学性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z