943 resultados para Optically pumped laser emissions


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A surface emitting microcavity was formed by sandwiching a polymer film containing poly(N-vinyleabzole) (PVK). 8-hydroxyquinoline aluminium (Alq(3)) and 4-(Dicyanome thylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-Pyran(DCM) between a distributed Bragg reflector (DBR) with a reflectivity of 99% and a silver film. The sample was optically pumped with 250 ps pulses at 2 Hz repetition rate by a 355 nm line of the third harmonic of a mode-lock Nd:YAG laser. The lasing phenomenon was observed in DCM-doped PVK microcavity. The full width at half maximum (FWHM) was 3 nm with the peak wavelength at 602 nm. The threshold energy for lasing was estimated to be about 3 mu J. (C) 2000 Elsevier Science S.A. All rights reserved.

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Optically pumped stimulated emission behavior in an organic film was demonstrated in this study. The gain material consists of a laser dye perylene doped into polystyrene (PS) matrix in an appropriate weight ratio. The sample was transversely pumped by the three harmonic output of a mode-locked Nd:YAG laser. The change of the emission spectra showed a clear threshold action and gain narrowing phenomenon when increasing the excitation intensity. Three emission peaks were observed below the excitation threshold, which are locate at 446, 475 and 506 nm, respectively. However, only the gain narrowing peak centered at 475 nm could be detected above the threshold. The spectra narrowing observed results from the amplified spontaneous emission (ASE) in the gain material. (C) 2000 Elsevier Science S.A. All rights reserved.

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Lasers play an important role for medical, sensoric and data storage devices. This thesis is focused on design, technology development, fabrication and characterization of hybrid ultraviolet Vertical-Cavity Surface-Emitting Lasers (UV VCSEL) with organic laser-active material and inorganic distributed Bragg reflectors (DBR). Multilayer structures with different layer thicknesses, refractive indices and absorption coefficients of the inorganic materials were studied using theoretical model calculations. During the simulations the structure parameters such as materials and thicknesses have been varied. This procedure was repeated several times during the design optimization process including also the feedback from technology and characterization. Two types of VCSEL devices were investigated. The first is an index coupled structure consisting of bottom and top DBR dielectric mirrors. In the space in between them is the cavity, which includes active region and defines the spectral gain profile. In this configuration the maximum electrical field is concentrated in the cavity and can destroy the chemical structure of the active material. The second type of laser is a so called complex coupled VCSEL. In this structure the active material is placed not only in the cavity but also in parts of the DBR structure. The simulations show that such a distribution of the active material reduces the required pumping power for reaching lasing threshold. High efficiency is achieved by substituting the dielectric material with high refractive index for the periods closer to the cavity. The inorganic materials for the DBR mirrors have been deposited by Plasma- Enhanced Chemical Vapor Deposition (PECVD) and Dual Ion Beam Sputtering (DIBS) machines. Extended optimizations of the technological processes have been performed. All the processes are carried out in a clean room Class 1 and Class 10000. The optical properties and the thicknesses of the layers are measured in-situ by spectroscopic ellipsometry and spectroscopic reflectometry. The surface roughness is analyzed by atomic force microscopy (AFM) and images of the devices are taken with scanning electron microscope (SEM). The silicon dioxide (SiO2) and silicon nitride (Si3N4) layers deposited by the PECVD machine show defects of the material structure and have higher absorption in the ultra violet range compared to ion beam deposition (IBD). This results in low reflectivity of the DBR mirrors and also reduces the optical properties of the VCSEL devices. However PECVD has the advantage that the stress in the layers can be tuned and compensated, in contrast to IBD at the moment. A sputtering machine Ionsys 1000 produced by Roth&Rau company, is used for the deposition of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). The chamber is equipped with main (sputter) and assisted ion sources. The dielectric materials were optimized by introducing additional oxygen and nitrogen into the chamber. DBR mirrors with different material combinations were deposited. The measured optical properties of the fabricated multilayer structures show an excellent agreement with the results of theoretical model calculations. The layers deposited by puttering show high compressive stress. As an active region a novel organic material with spiro-linked molecules is used. Two different materials have been evaporated by utilizing a dye evaporation machine in the clean room of the department Makromolekulare Chemie und Molekulare Materialien (mmCmm). The Spiro-Octopus-1 organic material has a maximum emission at the wavelength λemission = 395 nm and the Spiro-Pphenal has a maximum emission at the wavelength λemission = 418 nm. Both of them have high refractive index and can be combined with low refractive index materials like silicon dioxide (SiO2). The sputtering method shows excellent optical quality of the deposited materials and high reflection of the multilayer structures. The bottom DBR mirrors for all VCSEL devices were deposited by the DIBS machine, whereas the top DBR mirror deposited either by PECVD or by combination of PECVD and DIBS. The fabricated VCSEL structures were optically pumped by nitrogen laser at wavelength λpumping = 337 nm. The emission was measured by spectrometer. A radiation of the VCSEL structure at wavelength 392 nm and 420 nm is observed.

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We have first demonstrated that a random laser action generated by a hybrid film composed of a semiconducting organic polymer (SOP) and TiO2 nanoparticles can be used to detect 2,4,6-trinitrotoluene (TNT) vapors. The hybrid film was fabricated by spin-casting SOP solution dispersed with nanosized TiO2 particles on quartz glass. The SOP in the hybrid film functioned as both the gain medium and the sensory transducer. A random lasing action was observed with a certain pump power when the size (diameter of 50 nm) and concentration (8.9 - 1012/cm3) of TiO2 nanoparticles were optimized. Measurements of fluorescence quenching behavior of the hybrid film in TNT vapor atmosphere (10 ppb) showed that attenuated lasing in optically pumped hybrid film displayed a sensitivity to vapors of explosives more than 20 times higher than was observed from spontaneous emission. This phenomenon has been explained with the four-level laser model. Since the sensory transducer used in the hybrid polymer/nanoparticles system could be replaced by other functional materials, the concept developed could be extended to more general domains of chemical or environment detection.

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We report on a study of the CH3OD molecule in a search for new far-infrared (FIR) laser lines. For optical pumping of large offset vibrational absorption transitions, a continuous-wave waveguide CO2 laser with 300 MHz tunability around each line was used for the first time. As a consequence, 17. new far-infrared laser emissions were observed. For these lines, we also present data on wavelength, intensity, offset, relative polarization, and optimum operation pressure.

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We investigated the IR absorption spectrum of (CH3OH)-C-13 around the frequency of the 10R(20) CO2 laser line. We found two absorption lines which can be excited by 10R(20) and studied the FIR laser emissions excited by this pump line using a waveguide CO2 laser of 300 MHz tunability: We report two new FIR laser lines of large offset, not previously observed due to their weakness and closeness to other stronger lines. We measured the frequencies of five FIR laser lines for the first time by an accurate heterodyne technique and present the complete assignments of the IR-FIR laser systems relative to this pump line. Furthermore we present new frequency values for two FIR laser lines whose frequencies had been previously wrongly measured. Copyright (C) 1997 Elsevier B.V. Ltd.

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We have investigated the high-resolution Fourier transform spectrum of the C-O stretching fundamental band of CD3OH in order to assign far-infrared (FIR) laser transitions. The absorption spectrum was analyzed by means of the ''Ritz'' program, which calculates the energy level values directly from the Rydberg-Ritz combination principle. We have also used the ''LaseRitz'' program to facilitate the assignment of the FIR laser lines. As a consequence we could determine 12 new assignments, confirming 4 previously proposed ones and predicting new FIR laser emissions. (C) 1997 Academic Press.

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We investigated the IR absorption spectrum of 13CH3OH around the frequency of the 10R(20) CO2 laser line. We found two absorption lines which can be excited by 10R(20) and studied the FIR laser emissions excited by this pump line using a waveguide CO2 laser of 300 MHz tunability. We report two new FIR laser lines of large offset, not previously observed due to their weakness and closeness to other stronger lines. We measured the frequencies of five FIR laser lines for the first time by an accurate heterodyne technique and present the complete assignments of the IR-FIR laser systems relative to this pump line. Furthermore we present new frequency values for two FIR laser lines whose frequencies had been previously wrongly measured. Copyright © 1997 Elsevier Science Ltd.

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The Ritz computer program, developed for facilitating the assignment of molecular Fourier transform absorption spectra and described in a previous work, determines the energy level values involved in the assigned transitions by the Rydberg-Ritz combination principle. Combining the data obtained from the analyses of high-resolution infrared (IR) and far-infrared (FIR) spectra, it is possible to predict possible FIR laser emissions of molecules. In the present work we have applied this method to the common isotopomer methanol, 12CH3 16OH, and obtained 14 proposed assignments for previously unassigned FIR laser lines. We also predict 15 possible new FIR laser emissions. For the first time, an assignment involving a four-level laser system with collisional population transfer to a slightly higher energy level is reported. © 1998 Academic Press.

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In this paper, we investigate SHG efficiency dependency on crystal length. Four periodically-poled MgSLT crystals (PPMgSLT) of 2, 4, 11 and 25 mm in length were used, for intracavity frequency doubling of an optically-pumped GalnNAs semiconductor disk laser.

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Intracavity frequency doubling of an optically pumped GaInNAs semiconductor disk laser by a periodically poled near-stoichiometric lithium tantalate crystal has been investigated. Stable second-harmonic generation at 610nm has been achieved with an output power of 730mW, limited only by the spectral acceptance range and Fresnel losses of the crystal. Spectral tuning of 8nm was realised with a Fabry-Pérot etalon. © The Institution of Engineering and Technology.

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We present novel Terahertz (THz) emitting optically pumped Quantum Dot (QD) photoconductive (PC) materials and antenna structures on their basis both for pulsed and CW pumping regimes. Full text Quantum dot and microantenna design - Presented here are design considerations for the semiconductor materials in our novel QD-based photoconductive antenna (PCA) structures, metallic microantenna designs, and their implementation as part of a complete THz source or transceiver system. Layers of implanted QDs can be used for the photocarrier lifetime shortening mechanism[1,2]. In our research we use InAs:GaAs QD structures of varying dot layer number and distributed Bragg reflector(DBR)reflectivity range. According to the observed dependence of carrier lifetimes on QD layer periodicity [3], it is reasonable to assume that electron lifetimes can be potentially reduced down to 0.45ps in such structures. Both of these features; long excitation wavelength and short carriers lifetime predict possible feasibility of QD antennas for THz generation and detection. In general, relatively simple antenna configurations were used here, including: coplanar stripline (CPS); Hertzian-type dipoles; bow-ties for broadband and log-spiral(LS)or log-periodic(LP)‘toothed’ geometriesfor a CW operation regime. Experimental results - Several lasers are used for antenna pumping: Ti:Sapphire femtosecond laser, as well as single-[4], double-[5] wavelength, and pulsed [6] QD lasers. For detection of the THz signal different schemes and devices were used, e.g. helium-cooled bolometer, Golay cell and a second PCA for coherent THz detection in a traditional time-domain measurement scheme.Fig.1shows the typical THz output power trend from a 5 um-gap LPQD PCA pumped using a tunable QD LD with optical pump spectrum shown in (b). Summary - QD-based THz systems have been demonstrated as a feasible and highly versatile solution. The implementation of QD LDs as pump sources could be a major step towards ultra-compact, electrically controllable transceiver system that would increase the scope of data analysis due to the high pulse repetition rates of such LDs [3], allowing real-time THz TDS and data acquisition. Future steps in development of such systems now lie in the further investigation of QD-based THz PCA structures and devices, particularly with regards to their compatibilitywith QD LDs as pump sources. [1]E. U. Rafailov et al., “Fast quantum-dot saturable absorber for passive mode-locking of solid-State lasers,”Photon.Tech.Lett., IEEE, vol. 16 pp. 2439-2441(2004) [2]E. Estacio, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures. Appl.Phys.Lett., vol. 94 pp. 232104 (2009) [3]C. Kadow et al., “Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics,” Appl. Phys. Lett., vol. 75 pp. 3548-3550 (1999) [4]T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, and E. U. Rafailov, “Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device,” Appl. Phys. Lett., vol. 101(2012) [5]R. Leyman, D. I. Nikitichev, N. Bazieva, and E. U. Rafailov, “Multimodal spectral control of a quantum-dot diode laser for THz difference frequency generation,” Appl. Phys. Lett., vol. 99 (2011) [6]K.G. Wilcox, M. Butkus, I. Farrer, D.A. Ritchie, A. Tropper, E.U. Rafailov, “Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser, ” Appl. Phys. Lett. Vol 94, 2511 © 2014 IEEE.

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Following the reaction matrix technique and the Kanamori approximation. a condition is obtained for the occurence of undamped Cooper pairs in a non-degenerate electron system. Its relevance to induced superconductivity in systems with artificially populated (optically pumped) bands is pointed out.

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The spin dependent cross sections, σT1/2 and σT3/2 , and asymmetries, A and A for 3He have been measured at the Jefferson Lab's Hall A facility. The inclusive scattering process 3He(e,e)X was performed for initial beam energies ranging from 0.86 to 5.1 GeV, at a scattering angle of 15.5°. Data includes measurements from the quasielastic peak, resonance region, and the deep inelastic regime. An approximation for the extended Gerasimov-Drell-Hearn integral is presented at a 4-momentum transfer Q2 of 0.2-1.0 GeV2.

Also presented are results on the performance of the polarized 3He target. Polarization of 3He was achieved by the process of spin-exchange collisions with optically pumped rubidium vapor. The 3He polarization was monitored using the NMR technique of adiabatic fast passage (AFP). The average target polarization was approximately 35% and was determined to have a systematic uncertainty of roughly ±4% relative.

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采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.