Polymer microfabrication by scanning based microstereolithography: Optical design and material functionality

Several research groups have attempted to optimize photopolymerization parameters to increase the throughput of scanning based microstereolithography (MSL) systems through modified beam scanning techniques. Efforts in reducing the curing line width have been implemented through high numerical aperture (NA) optical setups. However, the intensity contour symmetry and the depth of field of focus have led to grossly non-vertical and non-uniform curing profiles. This work tries to review the photopolymerization process in a scanning based MSL system from the aspect of material functionality and optical design. The focus has been to exploit the rich potential of photoreactor scanning system in achieving desired fabrication modalities (minimum curing width, uniform depth profile, and vertical curing profile) even with a reduced NA optical setup and a single movable stage. The present study tries to manipulate to its advantage the effect of optimized lower c] (photoinitiator (PI) concentration) in reducing the minimum curing width to similar to 10-20 mu m even with a higher spot size (similar to 21.36 mu m) through a judiciously chosen ``monomer-PI'' system. Optimization on grounds of increasing E-max (maximum laser exposure energy at surface) by optimizing the scan rate provides enough time for the monomer or resin to get cured across the entire resist thickness (surface to substrate similar to 10-100 mu m), leading to uniform depth profiles along the entire scan lengths. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4750975]

A two-axis in-plane motion measurement system based on optical beam deflection

Measurement of in-plane motion with high resolution and large bandwidth enables model-identification and real-time control of motion-stages. This paper presents an optical beam deflection based system for measurement of in-plane motion of both macro- and micro-scale motion stages. A curved reflector is integrated with the motion stage to achieve sensitivity to in-plane translational motion along two axes. Under optimal settings, the measurement system is shown to theoretically achieve sub-angstrom measurement resolution over a bandwidth in excess of 1 kHz and negligible cross-sensitivity to linear motion. Subsequently, the proposed technique is experimentally demonstrated by measuring the in-plane motion of a piezo flexure stage and a scanning probe microcantilever. For the former case, reflective spherical balls of different radii are employed to measure the in-plane motion and the measured sensitivities are shown to agree with theoretical values, on average, to within 8.3%. For the latter case, a prototype polydimethylsiloxane micro-reflector is integrated with the microcantilever. The measured in-plane motion of the microcantilever probe is used to identify nonlinearities and the transient dynamics of the piezo-stage upon which the probe is mounted. These are subsequently compensated by means of feedback control. (C) 2013 AIP Publishing LLC.

Note: A resonating reflector-based optical system for motion measurement in micro-cantilever arrays

A robust, compact optical measurement unit for motion measurement in micro-cantilever arrays enables development of portable micro-cantilever sensors. This paper reports on an optical beam deflection-based system to measure the deflection of micro-cantilevers in an array that employs a single laser source, a single detector, and a resonating reflector to scan the measurement laser across the array. A strategy is also proposed to extract the deflection of individual cantilevers from the acquired data. The proposed system and measurement strategy are experimentally evaluated and demonstrated to measure motion of multiple cantilevers in an array. (C) 2015 AIP Publishing LLC.

Region-of-interest diffuse optical tomography system

Diffuse optical tomography (DOT) using near-infrared light is a promising tool for non-invasive imaging of deep tissue. This technique is capable of quantitative reconstruction of absorption (mu(a)) and scattering coefficient (mu(s)) inhomogeneities in the tissue. The rationale for reconstructing the optical property map is that the absorption coefficient variation provides diagnostic information about metabolic and disease states of the tissue. The aim of DOT is to reconstruct the internal tissue cross section with good spatial resolution and contrast from noisy measurements non-invasively. We develop a region-of-interest scanning system based on DOT principles. Modulated light is injected into the phantom/tissue through one of the four light emitting diode sources. The light traversing through the tissue gets partially absorbed and scattered multiple times. The intensity and phase of the exiting light are measured using a set of photodetectors. The light transport through a tissue is diffusive in nature and is modeled using radiative transfer equation. However, a simplified model based on diffusion equation (DE) can be used if the system satisfies following conditions: (a) the optical parameter of the inhomogeneity is close to the optical property of the background, and (b) mu(s) of the medium is much greater than mu(a) (mu(s) >> mu(a)). The light transport through a highly scattering tissue satisfies both of these conditions. A discrete version of DE based on finite element method is used for solving the inverse problem. The depth of probing light inside the tissue depends on the wavelength of light, absorption, and scattering coefficients of the medium and the separation between the source and detector locations. Extensive simulation studies have been carried out and the results are validated using two sets of experimental measurements. The utility of the system can be further improved by using multiple wavelength light sources. In such a scheme, the spectroscopic variation of absorption coefficient in the tissue can be used to arrive at the oxygenation changes in the tissue. (C) 2016 AIP Publishing LLC.

FORTH for NOAA/MLML Instruments

This report describes FORTH software written for several instruments used in the NASA-sponsored project to design and build Marine Optical Buoy System (MOBS) and in the NOAA-sponsored project "EOS MODIS Execution: Oceanographic Profiling, Data Acquisition and Management for the Marine Optical Buoy System·'. In the NOAA project MLML and NOAA personnel will participate in quarterly cruises at the MOBS Hawaiian site to validate performance of SeaWiFS and will participate in several extended "process" cruises to provide wide geographic surface truthing investigations similar to those lead by Dennis Clark (NOAA) following the "launch of CZCS in 1979. In the NASA project we are designing and building MOBS, a high resolution spectroradiometer that will operate autonomously in a buoy moored west of Lanai in the Hawaiian Islands. That instrument, the "Marine Optical System" (MOS), will transmit by cellular phone in near real time observations of upwelled radiance and downwelled irradiance from three depths. [PDF contains 90 pages]

Optical Remote Sensing of Coastal Habitats, Moss Landing, California, 9-11 January, 2006: workshop proceedings

The Alliance for Coastal Technologies (ACT) Workshop on Optical Remote Sensing of Coastal Habitats was convened January 9-11, 2006 at Moss Landing Marine Laboratories in Moss Landing, California, sponsored by the ACT West Coast regional partnership comprised of the Moss Landing Marine Laboratories (MLML) and the Monterey Bay Aquarium Research Institute (MBARI). The "Optical Remote Sensing of Coastal Habitats" (ORS) Workshop completes ACT'S Remote Sensing Technology series by building upon the success of ACT'S West Coast Regional Partner Workshop "Acoustic Remote Sensing Technologies for Coastal Imaging and Resource Assessment" (ACT 04-07). Drs. Paul Bissett of the Florida Environmental Research Institute (FERI) and Scott McClean of Satlantic, Inc. were the ORS workshop co-chairs. Invited participants were selected to provide a uniform representation of the academic researchers, private sector product developers, and existing and potential data product users from the resource management community to enable development of broad consensus opinions on the role of ORS technologies in coastal resource assessment and management. The workshop was organized to examine the current state of multi- and hyper-spectral imaging technologies with the intent to assess the current limits on their routine application for habitat classification and resource monitoring of coastal watersheds, nearshore shallow water environments, and adjacent optically deep waters. Breakout discussions focused on the capabilities, advantages ,and limitations of the different technologies (e.g., spectral & spatial resolution), as well as practical issues related to instrument and platform availability, reliability, hardware, software, and technical skill levels required to exploit the data products generated by these instruments. Specifically, the participants were charged to address the following: (1) Identify the types of ORS data products currently used for coastal resource assessment and how they can assist coastal managers in fulfilling their regulatory and management responsibilities; (2) Identify barriers and challenges to the application of ORS technologies in management and research activities; (3) Recommend a series of community actions to overcome identified barriers and challenges. Plenary presentations by Drs. Curtiss 0. Davis (Oregon State University) and Stephan Lataille (ITRES Research, Ltd.) provided background summaries on the varieties of ORS technologies available, deployment platform options, and tradeoffs for application of ORS data products with specific applications to the assessment of coastal zone water quality and habitat characterization. Dr. Jim Aiken (CASIX) described how multiscale ground-truth measurements were essential for developing robust assessment of modeled biogeochemical interpretations derived from optically based earth observation data sets. While continuing improvements in sensor spectral resolution, signal to noise and dynamic range coupled with sensor-integrated GPS, improved processing algorithms for georectification, and atmospheric correction have made ORS data products invaluable synoptic tools for oceanographic research, their adoption as management tools has lagged. Seth Blitch (Apalachicola National Estuarine Research Reserve) described the obvious needs for, yet substantial challenges hindering the adoption of advanced spectroscopic imaging data products to supplement the current dominance of digital ortho-quad imagery by the resource management community, especially when they impinge on regulatory issues. (pdf contains 32 pages)

Smooth thin film C/diamond membranes with controllable optical band gaps

Mixed phase carbon-diamond films which consist of small grain diamond in an a:C matrix were deposited on polished Si using a radio frequency CH4 Ar plasma CVD deposition process. Ellipsometry, surface profilometry, scanning electron microscopy (SEM) and spectrophotometry were used to analyse these films. Film thicknesses were typically 50-100 nm with a surface roughness of ± 30 A ̊ over centimetre length scans. SEM analysis showed the films were smooth and pinhole free. The Si substrate was etched using backside masking and a directional etch to give taut carbon-diamond membranes on a Si grid. Spectrophotometry was used to analyse the optical properties of these membranes. Band gap control was achieved by varying the dc bias of the deposition process. Band gaps of 1.2 eV to 4.0 eV were achieved in these membranes. A technique for controlling the compressive stress in the films, which can range from 0.02 to 7.5 GPa has been employed. This has allowed the fabrication of thin, low stress, high band gap membranes that are extremely tough and chemically inert. Such carbon-diamond membranes seem promising for applications as windows in analytical instruments. © 1992.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs

Cd in GaAs is an acceptor atom and has the largest atomic diameter among the four commonly-used group-II shallow acceptor impurities (Be, Mg, Zn and Cd). The activation energy of Cd (34.7 meV) is also the largest one in the above four impurities, When Cd is doped by ion implantation, the effects of lattice distortion are expected to be apparently different from those samples ion-implanted by acceptor impurities with smaller atomic diameter. In order to compensate the lattice expansion and simultaneously to adjust the crystal stoichiometry, dual incorporation of Cd and nitrogen (N) was carried out into GaAs, Ion implantation of Cd was made at room temperature, using three energies (400 keV, 210 keV, 110 keV) to establish a flat distribution, The spatial profile of N atoms was adjusted so as to match that of Cd ones, The concentration of Cd and N atoms, [Cd] and [N] varied between 1 x 10(16) cm(-3) and 1 x 10(20) cm(-3). Two type of samples, i.e., solely Cd+ ion-implanted and dually (Cd+ + N+) ion-implanted with [Cd] = [N] were prepared, For characterization, Hall effects and photoluminescence (PL) measurements were performed at room temperature and 2 K, respectively. Hall effects measurements revealed that for dually ion-implanted samples, the highest activation efficiency was similar to 40% for [Cd] (= [N])= 1 x 10(18) cm(-3). PL measurements indicated that [g-g] and [g-g](i) (i = 2, 3, alpha, beta,...), the emissions due to the multiple energy levels of acceptor-acceptor pairs are significantly suppressed by the incorporation of N atoms, For [Cd] = [N] greater than or equal to 1 x 10(19) cm(-3), a moderately deep emission denoted by (Cd, N) is formed at around 1.45-1.41 eV. PL measurements using a Ge detector indicated that (Cd, N) is increasingly red-shifted in energy and its intensity is enhanced with increasing [Cd] = [N], (Cd, N) becomes a dominant emission for [Cd] = [N] = 1 x 10(20) cm(-3). The steep reduction of net hole carrier concentration observed for [Cd]/[N] less than or equal to 1 was ascribed to the formation of (Cd, N) which is presumed to be a novel radiative complex center between acceptor and isoelectronic atoms in GaAs.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network

　

Fabrication of semiconductor optical amplifiers and a novel gain measuring technique

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.

MMI optical couplers and switches with SOI technology

MMI (multimode interference) coupler, modulator and switch based on SOI (silicon- on-insulator) have been become more and more attractive in optical systems since they show important performances. SiO2 thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. The design and fabrication of multimode interference (MMI) optical coupler, modulator and switche in SOI technology are presented in the paper. The results demonstrated that the modulator has an extinction ratio of -11.0dB and excess loss of -2.5dB, while the optical switch has a crosstalk of -12.5dB and responding time of less than 20 mus.

Optical properties of AIInGaN quaternary alloys

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.