光在随机增益介质中的放大

结合环形腔理论。运用蒙特卡罗法模拟了光子在介质中的随机行走。研究了倍频Nd：YAG（脉宽6ns，频率20Hz）脉冲激光器作为泵浦光，在TiO2／若丹明B有机增益介质中，散射微粒的颗粒密度和泵浦光面积对随机激光器阈值强度的影响。模拟结果表明：随机激光阈值和光子在增益介质中的随机行走路程长度和光子通过边界返回增益区和非增益区的几率有关。随着泵浦光面积的增加，随机激光器阈值降低；增益介质中散射颗粒密度的增加降低了随机激光器的阈值。

掺铒高硅氧玻璃光谱性质的研究

应用Judd-Oflet理论计算了新型掺铒高硅氧玻璃中铒离子的强度参量Ωt（t=2，4，6），Ω2=8．15×10^-20,Ω4=1．43×10^-20,Ω6=1．22×10^-20，相比于其他氧化物玻璃，表现出较大的Ω2,6值，反映了铒离子周围的近邻结构不对称性和Er-O键的离子键成分较高．利用McCumber理论计算得到了能级4I13/2→4I15/2跃迁的受激发射截面为σc=O．51pm^2．这种高硅氧玻璃掺铒离子浓度尽管高于石英光纤的掺杂浓度10倍左右，其荧光寿命和量子效率仍达到6．0ms和66．

Near infrared broadband emission from bismuth-dysprosium codoped chalcohalide glasses

We investigate the broadband infrared emission of bismuth doped and bismuth/dysprosium codoped chalcohalide glasses. It is found that the bismuth/dysprosium codoping can drastically enhance the fluorescence as compared with either bismuth or dysprosium doped glasses. Meanwhile, the full width at half maximum of bismuth/dysprosium codoped glasses is over 170 nm, which is the largest value among all the reported rare-earth doped chalcohalide glasses. An ideal way for energy consumption between bismuth and dysprosium ions is supposed. Such improved gain spectra of both bismuth and dysprosium ions may have potential applications in developing broadband fibre amplifiers.

Enhanced broadband near-infrared luminescence in transparent silicate glass ceramics containing Yb3+ ions and Ni2+-doped Li Ga5 O8 nanocrystals

Spectral properties of Yb3+/Ni2+ codoped transparent silicate glass ceramics containing LiGa5O8 nanocrystals were investigated. The near-infrared emission intensity of Ni2+ was largely increased with Yb3+ codoping due to Yb3+-> Ni2+ energy transfer. The qualitative calculation of the energy transfer constant Cs-a and rate Ps-a showed that the Yb3+-> Ni2+ energy transfer was much greater than in the opposite direction. Yb3+/Ni2+ codoped glass ceramics with 0.75 mol % Yb2O3 exhibited a near-infrared emission with full width at half maximum of 290 nm and fluorescent lifetime of 920 mu s. The glass ceramics are promising for broadband optical amplification.

Infrared broadband emission of bismuth-doped barium-aluminum-borate glasses

We report near infrared broadband emission of bismuth-doped barium-aluminum-borate glasses. The broadband emission covers 1.3 mum window in optical telecommunication systems. And it possesses wide full width at half maximum (FWHM) of similar to 200nm and long lifetime as long as 350 mus. The luminescent properties are quite sensitive to glass compositions and excitation wavelengths. Based on energy matching conditions, we suggest that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broad infrared emission characteristics of this material indicate that it might be a promising candidate for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Near infrared broadband emission of bismuth-doped aluminophosphate glass

Near infrared broadband emission characteristics of bismuth-doped aluminophosphate glass have been investigated. Broad infrared emissions peaking at 1210nm, 1173nm and 1300nm were observed when the glass was pumped by 405nm laser diode (LD), 514nm Ar+ laser and 808nm LD, respectively. The full widths at half maximum (FWHMs) are 235nm, 207nm and 300nm for the emissions at 1210nm, 1173nm and 1300nm, respectively. Based on the energy matching conditions, it is suggested that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broadband infrared luminescent characteristics of the glasses indicate that they are promising for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Broadband infrared luminescence from Li2O-Al2O3-ZnO-SiO2 glasses doped with Bi2O3

The broadband emission in the 1.2 similar to 1.6 mu m region from Li2O-Al2O3-ZnO-SiO2 ( LAZS) glass codoped with 0.01mol.% Cr2O3 and 1.0mol.% Bi2O3 when pumped by the 808nm laser at room temperature is not initiated from Cr4+ ions, but from bismuth, which is remarkably different from the results reported by Batchelor et al. The broad similar to 1300nm emission from Bi2O3-containing LAZS glasses possesses a FWHM ( Full Width at Half Maximum) more than 250nm and a fluorescent lifetime longer than 500 mu s when excited by the 808nm laser. These glasses might have the potential applications in the broadly tunable lasers and the broadband fiber amplifiers. (c) 2005 Optical Society of America.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

Superbroadband 1310 nm emission from bismuth and tantalum codoped germanium oxide glasses

Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the 0, E, S, C, and L bands (1260-1625 nm), with a maximum peak at similar to 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 lis. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as amplification media for broadly tunable lasers and wideband amplifiers in optical communications. (c) 2005 Optical Society of America.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 leads to suppression of phase re-laxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron-hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron - hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

Influence of a tilted cavity on quantum-dot optoelectronic active devices

Quantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.

Near-infrared luminescent mesoporous materials covalently bonded with ternary lanthanide [Er(III), Nd(III), Yb(III), Sm(III), Pr(III)] complexes

New near-infrared-luminescent mesoporous materials were prepared by linking ternary lanthanide (Er3+, Nd3+, Yb3+, Sm3+, Pr3+) complexes to the ordered mesoporous MCM-41 through a functionalized 1,10-phenanthroline (phen) group 5-(N,N-bis-3-(triethoxysilyl)propyl)ureyl-1,10-phenanthroline. The resulting materials (denoted as Ln(hfth)(3)phen-M41 and Pr(tfnb)(3)phen-M41; Ln=Er, Yb, Nd, Sm; hfth = 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)hexane-1,3-dionate; tfnb = 4,4,4-trifluoro-1-(2-naphthyl)- 1, 3-butanedionate) were characterized by powder X-ray diffraction, N-2 adsorption/desorption, and elemental analysis. Luminescence spectra of these lanthanide-complex functionalized materials were recorded, and the luminescence decay times were measured. Upon excitation at the absorption of the organic ligands, all these materials show the characteristic NIR luminescence of the corresponding lanthanide (Er3+, Nd3+, Yb3+, Sm3+, Pr3+) ions by sensitization from the organic ligands moiety. The good luminescent performances enable these NIR-luminescent mesoporous materials to have possible applications in optical amplification (operating at 1300 or 1500 nm), laser systems, or medical diagnostics.

Structures photoniques à base de nanocristaux de silicium

Il y a des indications que les nanocristaux de silicium (nc-Si) présentent un gain optique qui est potentiellement assez grand pour permettre l'amplification optique dans la gamme de longueurs d'ondes où une photoluminescence (PL) intense est mesurée (600- 1000 nm). Afin de fabriquer des cavités optiques, nous avons implantés des morceaux de silice fondue avec des ions de Si pour former une couche de nc-Si d'une épaisseur d'environ 1 μm. Le Si a été implanté à quatre énergies comprises entre 1 MeV et 1,9 MeV de manière à obtenir une concentration atomique de Si en excès variant entre 25% et 30%. Les pièces ont été flanquées de miroirs diélectriques composés de filtres interférentiels multicouches. Sur une plage de longueurs d'ondes d'environ 200 nm de large, un filtre réfléchit près de 100%, alors que l'autre a une réflexion moyenne d'environ 90%. Nous avons mesuré et comparé les spectres de PL de trois échantillons: le premier sans miroir, le second avec des filtres réfléchissant autour de 765 nm (entre 700 nm et 830 nm), et la troisième avec des filtres agissant autour de 875 nm (entre 810 nm et 940 nm). Lorsque les échantillons sont excités avec un laser pulsé à 390 nm, des mesures de photoluminescence résolue dans le temps (PLT) révèlent des taux de décroissance plus rapides en présence de miroirs dans le domaine de longueurs d'onde où ceux-ci agissent comparé aux échantillons sans miroirs. Aussi, l'intensité PL en fonction de la fluence d'excitation montre une augmentation plus rapide de la présence de miroirs, même si celle-ci reste sous-linéaire. Nous concluons que de l'émission stimulée pourrait être présente dans la cavité optique, mais sans dominer les autres mécanismes d'émission et de pertes.

Design, Fabrication and Characterization of Passive and Active Polymer Photonic Devices

The rapid developments in fields such as fibre optic communication engineering and integrated optical electronics have expanded the interest and have increased the expectations about guided wave optics, in which optical waveguides and optical fibres play a central role. The technology of guided wave photonics now plays a role in generating information (guided-wave sensors) and processing information (spectral analysis, analog-to-digital conversion and other optical communication schemes) in addition to its original application of transmitting information (fibre optic communication). Passive and active polymer devices have generated much research interest recently because of the versatility of the fabrication techniques and the potential applications in two important areas – short distant communication network and special functionality optical devices such as amplifiers, switches and sensors. Polymer optical waveguides and fibres are often designed to have large cores with 10-1000 micrometer diameter to facilitate easy connection and splicing. Large diameter polymer optical fibres being less fragile and vastly easier to work with than glass fibres, are attractive in sensing applications. Sensors using commercial plastic optical fibres are based on ideas already used in silica glass sensors, but exploiting the flexible and cost effective nature of the plastic optical fibre for harsh environments and throw-away sensors. In the field of Photonics, considerable attention is centering on the use of polymer waveguides and fibres, as they have a great potential to create all-optical devices. By attaching organic dyes to the polymer system we can incorporate a variety of optical functions. Organic dye doped polymer waveguides and fibres are potential candidates for solid state gain media. High power and high gain optical amplification in organic dye-doped polymer waveguide amplifier is possible due to extremely large emission cross sections of dyes. Also, an extensive choice of organic dye dopants is possible resulting in amplification covering a wide range in the visible region.