Performance comparison of Stellite 6® deposited on steel using supersonic laser deposition and laser cladding

Stellite 6® powders were deposited on carbon steel using Supersonic Laser Deposition. The microstructure and performance of the coatings were examined using SEM, optical microscopy, EDS, XRD, microhardness testing and pin-on-disc wear testing. The results showed that the microstructure and wear behaviour of the most successful SLD deposition conditions with N2 at a pressure of 30bar, a temperature of 450°C and a deposition power of 1.5kW were compared with that of optimised laser cladding. © 2012 Elsevier B.V.

Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Nanocrystalline silicon (nc-Si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (alpha-Si) films on SiO2-coated quartz or glass substrates. The effect of laser energy density on structural characteristics of nc-Si films was investigated. The Ni-induced crystallization of the a-Si films was also discussed. The surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and Raman scattering spectroscopy. The results show that not only can the alpha-Si films be crystallized by the laser annealing technique, but also the size of Si nanocrystallites can be controlled by varying the laser energy density. Their average size is about 4-6 nm. We present a surface tension and interface strain model used for describing the laser annealed crystallization of the alpha-Si films. The doping of Ni atoms may effectively reduce the threshold value of laser energy density to crystallize the alpha-Si films, and the flocculent-like Si nanostructures could be formed by Ni-induced crystallization of the alpha-Si films.

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Large depth-of-view portable three-dimensional laser scanner and its segmental calibration for robot vision

A portable 3D laser scanning system has been designed and built for robot vision. By tilting the charge coupled device (CCD) plane of portable 3D scanning system according to the Scheimpflug condition, the depth-of-view is successfully extended from less than 40 to 100 mm. Based on the tilted camera model, the traditional two-step camera calibration method is modified by introducing the angle factor. Meanwhile, a novel segmental calibration approach, i.e., dividing the whole work range into two parts and calibrating, respectively, with corresponding system parameters, is proposed to effectively improve the measurement accuracy of the large depth-of-view 3D laser scanner. In the process of 3D reconstruction, different calibration parameters are used to transform the 2D coordinates into 3D coordinates according to the different positions of the image in the CCD plane, and the measurement accuracy of 60 mu m is obtained experimentally. Finally, the experiment of scanning a lamina by the large depth-of-view portable 3D laser scanner used by an industrial robot IRB 4400 is also employed to demonstrate the effectiveness and high measurement accuracy of our scanning system. (C) 2007 Elsevier Ltd. All rights reserved.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dualwaveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB. These devices exhibit a 3dB modulation bandwidth of 15. 0GHz, and modulator DC extinction ratios of 16.2dB. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7. 3°× 18. 0°,respectively, resulting in a 3. 0dB coupling loss with a cleaved single-mode optical fiber.

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology

国家863计划

Circa AD 626 volcanic eruption；climatic cooling；and the collapse of the Eastern Turkic Empire

IEECAS SKLLQG

Low-level laser therapy and light-emitting diode effects in the secretion of neuropeptides SP and CGRP in rat skin

The phototherapy effects in the skin are related to biomodulation, usually to accelerate wound healing. However, there is no direct proof of the interrelation between the effects of low-level laser therapy (LLLT) and light-emitting diode (LED) in neuropeptide secretion, these substances being prematurely involved in the neurogenic inflammation phase of wound healing. This study therefore focused on investigating LLLT and LED in Calcitonin gene-related peptide (CGRP) and substance P (SP) secretion in healthy rat skin. Forty rats were randomly distributed into five groups with eight rats each: Control Group, Blue LED Group (470 nm, 350 mW power), Red LED Group (660 nm, 350 mW power), Red Laser Group (660 nm, 100 mW power), and Infrared Laser Group (808 nm, 100 mW power) (DMCA (R) Equipamentos Ltda., So Carlos, So Paulo, Brazil). the skin of the animals in the experimental groups was irradiated using the punctual contact technique, with a total energy of 40 J, single dose, standardized at one point in the dorsal region. After 14 min of irradiation, the skin samples were collected for CGRP and SP quantification using western blot analysis. SP was released in Infrared Laser Group (p = 0.01); there was no difference in the CGRP secretion among groups. Infrared (808 nm) LLLT enhances neuropeptide SP secretion in healthy rat skin.

Vascular structures for volumetric cooling and mechanical strength

When solid material is removed in order to create flow channels in a load carrying structure, the strength of the structure decreases. On the other hand, a structure with channels is lighter and easier to transport as part of a vehicle. Here, we show that this trade off can be used for benefit, to design a vascular mechanical structure. When the total amount of solid is fixed and the sizes, shapes, and positions of the channels can vary, it is possible to morph the flow architecture such that it endows the mechanical structure with maximum strength. The result is a multifunctional structure that offers not only mechanical strength but also new capabilities necessary for volumetric functionalities such as self-healing and self-cooling. We illustrate the generation of such designs for strength and fluid flow for several classes of vasculatures: parallel channels, trees with one, two, and three bifurcation levels. The flow regime in every channel is laminar and fully developed. In each case, we found that it is possible to select not only the channel dimensions but also their positions such that the entire structure offers more strength and less flow resistance when the total volume (or weight) and the total channel volume are fixed. We show that the minimized peak stress is smaller when the channel volume (φ) is smaller and the vasculature is more complex, i.e., with more levels of bifurcation. Diminishing returns are reached in both directions, decreasing φ and increasing complexity. For example, when φ=0.02 the minimized peak stress of a design with one bifurcation level is only 0.2% greater than the peak stress in the optimized vascular design with two levels of bifurcation. © 2010 American Institute of Physics.