Experimental, Numerical and Analytical Studies of the MHD-driven plasma jet, instabilities and waves

This thesis describes a series of experimental, numerical, and analytical studies involving the Caltech magnetohydrodynamically (MHD)-driven plasma jet experiment. The plasma jet is created via a capacitor discharge that powers a magnetized coaxial planar electrodes system. The jet is collimated and accelerated by the MHD forces.

We present three-dimensional ideal MHD finite-volume simulations of the plasma jet experiment using an astrophysical magnetic tower as the baseline model. A compact magnetic energy/helicity injection is exploited in the simulation analogous to both the experiment and to astrophysical situations. Detailed analysis provides a comprehensive description of the interplay of magnetic force, pressure, and flow effects. We delineate both the jet structure and the transition process that converts the injected magnetic energy to other forms.

When the experimental jet is sufficiently long, it undergoes a global kink instability and then a secondary local Rayleigh-Taylor instability caused by lateral acceleration of the kink instability. We present an MHD theory of the Rayleigh-Taylor instability on the cylindrical surface of a plasma flux rope in the presence of a lateral external gravity. The Rayleigh-Taylor instability is found to couple to the classic current-driven instability, resulting in a new type of hybrid instability. The coupled instability, produced by combination of helical magnetic field, curvature of the cylindrical geometry, and lateral gravity, is fundamentally different from the classic magnetic Rayleigh-Taylor instability occurring at a two-dimensional planar interface.

In the experiment, this instability cascade from macro-scale to micro-scale eventually leads to the failure of MHD. When the Rayleigh-Taylor instability becomes nonlinear, it compresses and pinches the plasma jet to a scale smaller than the ion skin depth and triggers a fast magnetic reconnection. We built a specially designed high-speed 3D magnetic probe and successfully detected the high frequency magnetic fluctuations of broadband whistler waves associated with the fast reconnection. The magnetic fluctuations exhibit power-law spectra. The magnetic components of single-frequency whistler waves are found to be circularly polarized regardless of the angle between the wave propagation direction and the background magnetic field.

Instabilities in a grating feedback external cavity semiconductor laser

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America

Solar flare particle propagation--comparison of a new analytic solution with spacecraft measurements

A new analytic solution has been obtained to the complete Fokker-Planck equation for solar flare particle propagation including the effects of convection, energy-change, corotation, and diffusion with ĸ_r = constant and ĸ_Ɵ ∝ r². It is assumed that the particles are injected impulsively at a single point in space, and that a boundary exists beyond which the particles are free to escape. Several solar flare particle events have been observed with the Caltech Solar and Galactic Cosmic Ray Experiment aboard OGO-6. Detailed comparisons of the predictions of the new solution with these observations of 1-70 MeV protons show that the model adequately describes both the rise and decay times, indicating that ĸ_r = constant is a better description of conditions inside 1 AU than is ĸ_r ∝ r. With an outer boundary at 2.7 AU, a solar wind velocity of 400 km/sec, and a radial diffusion coefficient ĸ_r ≈ 2-8 x 10²⁰ cm²/sec, the model gives reasonable fits to the time-profile of 1-10 MeV protons from "classical" flare-associated events. It is not necessary to invoke a scatter-free region near the sun in order to reproduce the fast rise times observed for directly-connected events. The new solution also yields a time-evolution for the vector anisotropy which agrees well with previously reported observations.

In addition, the new solution predicts that, during the decay phase, a typical convex spectral feature initially at energy T_o will move to lower energies at an exponential rate given by T_KINK = T_oexp(-t/Ƭ_KINK). Assuming adiabatic deceleration and a boundary at 2.7 AU, the solution yields Ƭ_KINK ≈ 100h, which is faster than the measured ~200h time constant and slower than the adiabatic rate of ~78h at 1 AU. Two possible explanations are that the boundary is at ~5 AU or that some other energy-change process is operative.

Viscoelastic microbuckling of fiber composites

A theoretical study is given of viscoelastic microbuckling of fiber composites. The analysis is formulated in terms of general linear viscoelastic behavior within the kink band. Material outside the kink band is assumed to behave elastically. Two specific forms of linear viscoelastic behavior are considered: a standard linear viscoelastic model and a logarithmically creeping model. Results are provided as deformation versus time histories and failure life versus applied stress. Failure is due to either the attainment of a critical failure strain in the kink band or to the intervention of a different failure mechanism such as plastic microbuckling.

Discrete dislocation plasticity analysis of crack-tip fields in polycrystalline materials

Small scale yielding around a mode I crack is analysed using polycrystalline discrete dislocation plasticity. Plane strain analyses are carried out with the dislocations all of edge character and modelled as line singularities in a linear elastic material. The lattice resistance to dislocation motion, nucleation, interaction with obstacles and annihilation are incorporated through a set of constitutive rules. Grain boundaries are modelled as impenetrable to dislocations. The polycrystalline material is taken to consist of two types of square grains, one of which has a bcc-like orientation and the other an fcc-like orientation. For both orientations there are three active slip systems. Alternating rows, alternating columns and a checker-board-like arrangement of the grains is used to construct the polycrystalline materials. Consistent with the increasing yield strength of the polycrystalline material with decreasing grain size, the calculations predict a decrease in both the plastic zone size and the crack-tip opening displacement for a given applied mode I stress intensity factor. Furthermore, slip-band and kink-band formation is inhibited by all grain arrangements and, with decreasing grain size, the stress and strain distributions more closely resemble the HRR fields with the crack-tip opening approximately inversely proportional to the yield strength of the polycrystalline materials. The calculations predict a reduction in fracture toughness with decreasing grain size associated with the grain boundaries acting as effective barriers to dislocation motion.

Evolution of InAs branches in InAsGaAs nanowire heterostructures

Branched nanowire heterostructures of InAsGaAs were observed during Au-assisted growth of InAs on GaAs nanowires. The evolution of these branches has been determined through detailed electron microscopy characterization with the following sequence: (1) in the initial stage of InAs growth, the Au droplet is observed to slide down the side of the GaAs nanowire, (2) the downward movement of Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and (3) with further supply of In and As vapor reactants, the Au nanoparticles assist the formation of InAs branches with a well-defined orientation relationship with GaAsInAs core/shell stems. We anticipate that these observations advance the understanding of the kink formation in axial nanowire heterostructures. © 2007 American Institute of Physics.

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Grating optimization and experiment on high-power distributed feedback lasers

Coupling coefficient is an important parameter for distributed feedback lasers. Modified coupled-wave equations are used to calculate the effect of grating shape on coupling coefficient of the second-order gratings. Corresponding devices demonstrate that the maximum kink-free power per facet reaches 50 mW and the sidemode suppression ratio is 36 dB.

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响

研究了埋氧层中注氮后对制作出的部分耗尽SOInMOSFET的特性产生的影响.实验发现,与不注氮的SIMOX基片相比,由注氮SIMON基片制作的nMOSFET的电子迁移率降低了.且由最低注入剂量的SIMON基片制作的器件具有最低的迁移率.随注入剂量的增加,迁移率略有上升,并趋于饱和.分析认为,电子迁移率的降低是由于Si/SiO2界面的不平整造成的.实验还发现,随氮注入剂量的提高,nMOSFET的阈值电压往负向漂移.但是,对应最低注入剂量的器件阈值电压却大于用SIMOX基片制作出的器件.固定氧化物正电荷及界面陷阱密度的大小和分布的变化可能是导致阈值电压变化的主要因素.另外发现,用注氮基片制作出的部分耗尽SOInMOSFET的kink效应明显弱于用不注氮的SIMOX基片制作的器件.

部分耗尽型SOI CMOS模拟电路设计研究

介绍了部分耗尽型SOI MOS器件浮体状态下的Kink效应及对模拟电路的影响.阐述了4种常用体接触方式及其他消除部分耗尽型SOI MOS器件Kink效应的工艺方法,同时给出了部分耗尽型SOIMOSFET工作在浮体状态下时模拟电路的设计方法.

Nonlinear elastic waves in a monatomic chain with nonlinear interaction

Nonlinear wave equation for a one-dimensional anharmonic crystal lattice in terms of its microscopic parameters is obtained by means of a continuum approximation. Using a small time scale transformation, the nonlinear wave equation is reduced to a combined KdV equation and its single soliton solution yields the supersonic kink form of nonlinear elastic waves for the system.

海相碳酸盐－稀土元素共沉淀过程中的分异作用研究

本文主要运用稳定加液－反应系统对海水中方解石和文石形成时稀土元素的共沉淀现象进行了分析，研究了稀土元素在固-液体系中的迁移、转化和分配。进而在对其定量描述的前提下，研究了稀土元素共沉淀对各种反应条件的响应，并对共沉淀行为的机制进行了探讨。 本实验首先运用pH测试、高精度滴定分析等手段测定了实验中的一些基本参数，如[H+]、碱度和[Ca2+]，根据计算结果获得了各碳酸体系要素，并以此为基础建立了5℃、15℃和25℃及pCO2=0.003atm下海水中方解石或文石的沉淀动力学方程。实验结果表明： 1）在各条件下，方解石或文石的沉淀速率（R）和其在海水中过饱和度（Ω）存在很好的线性相关性，即海相碳酸盐的沉淀动力学方程可以通过下面的基本表达式来表示：LogR=k*Log(Ω-1)+b ； 2）过高的稀土元素浓度会对文石或方解石的沉淀产生抑制作用，进而对共沉淀过程中YREEs的分异和分馏产生一定的影响。相比方解石而言，文石的沉淀动力学过程承受稀土元素的干扰能力更强； 3）不同温度下得到的方解石或文石各自的沉淀动力学方程存在明显的差异，表明这一过程受热力学因素控制。相对于方解石而言，温度对文石的沉淀动力学的影响更为显著。 与前人研究不同的是，本实验中YREEs的浓度设定在非常低的范围内，从而避免了过高浓度YREEs对方解石或文石沉淀动力学过程的干扰。在最终的反应液中，各种实验条件非常接近自然环境。有关稀土元素的共沉淀行为主要得出以下定性或定量化结论： 1）YREEs在随方解石或文石的共沉淀过程中，均发生了强烈的分异作用。在方解石实验中，稀土元素的分异系数分布曲线呈凸状分布；而在文石实验中，稀土元素的分异系数随原子序数的增加逐渐减小，遵循镧系收缩的规律。总的来说，稀土元素，尤其轻稀土元素在文石中的分异作用要强于方解石。 2）无论是方解石还是文石，沉淀速率对YREEs的分异作用都有着明显的影响。在方解石中，YREEs的分异系数随沉淀速率的增加呈一致性递减趋势；而在文石中，其分异系数对文石沉淀速率有着截然不同的响应：轻稀土元素（La, Ce, Nd, Sm, Eu, Gd）的分异系数随文石沉淀速率的增加而下降，而重稀土元素（Ho, Y, Tm, Yb , Lu）的分异系数则随文石沉淀速率的增加呈上升趋势。 3）在方解石中YREEs的分异系数之间存在非常好的相互关系，表明这些元素是以成比例的方式参与共沉淀。整个谱系呈现中等强度的分馏，MREE相对于LREE和HREE要更为富集；在文石中由于沉淀速率的作用不同，只有Y、Ho、Yb、Lu等元素的分异系数之间有较好的相互关系。YREEs出现了差异性的强烈分馏，在新生成沉淀中轻稀土元素相对于重稀土元素强烈富集。 4）YREEs在溶液中和碳酸盐晶体表面的碳酸根配位形式对YREEs在共沉淀过程中的分异作用极为重要，YREEs在碳酸盐晶体表面的吸附是整个谱系发生分馏效应的关键环节。对于文石来讲，晶体中有效YREE离子和Ca离子半价大小之间的相近程度是其分馏效应的关键因素；而对于方解石来说，YREEs在方解石晶格中的安置就是其分馏效应的关键控制因子，但在晶格安置中起到关键作用的是YREEs和方解石中O原子之间离子键M-O的键长，而非离子半径。 5）综合YREEs在方解石中的分异作用和分馏效应，我们认为M2(CO3)3-CaCO3和MNa(CO3)2-CaCO3是最为可能的两种固体溶液形成模式。 最为重要的是，对比我们的实验结果与前人在灰岩、叠层石、微生物成因碳酸盐等方解石质载体中的研究成果，两者之间出现了非常好的一致性。我们认为方解石质载体将是重建古海水中稀土元素相关信息的重要工具。相比之下，文石质载体不适合作为类似的载体。

Precursor adsorption on copper surfaces as the first step during the deposition of copper: a density functional study with van der Waals correction

Copper dimethylamino-2-propoxide [Cu(dmap)2] is used as a precursor for low-temperature atomic layer deposition (ALD) of copper thin films. Chemisorption of the precursor is the necessary first step of ALD, but it is not known in this case whether there is selectivity for adsorption sites, defects, or islands on the substrate. Therefore, we study the adsorption of the Cu(dmap)2 molecule on the different sites on flat and rough Cu surfaces using PBE, PBE-D3, optB88-vdW, and vdW-DF2 methods. We found the relative order of adsorption energies for Cu(dmap)2 on Cu surfaces is Eads (PBE-D3) > Eads (optB88-vdW) > Eads (vdW-DF2) > Eads (PBE). The PBE and vdW-DF2 methods predict one chemisorption structure, while optB88-vdW predicts three chemisorption structures for Cu(dmap)2 adsorption among four possible adsorption configurations, whereas PBE-D3 predicts a chemisorbed structure for all the adsorption sites on Cu(111). All the methods with and without van der Waals corrections yield a chemisorbed molecule on the Cu(332) step and Cu(643) kink because of less steric hindrance on the vicinal surfaces. Strong distortion of the molecule and significant elongation of Cu–N bonds are predicted in the chemisorbed structures, indicating that the ligand–Cu bonds break during the ALD of Cu from Cu(dmap)2. The molecule loses its initial square-planar structure and gains linear O–Cu–O bonding as these atoms attach to the surface. As a result, the ligands become unstable and the precursor becomes more reactive to the coreagent. Charge redistribution mainly occurs between the adsorbate O–Cu–O bond and the surface. Bader charge analysis shows that electrons are donated from the surface to the molecule in the chemisorbed structures, so that the Cu center in the molecule is partially reduced.