The new supply chains : the Multichannel Networks

Digital innovation is transforming the media and entertainment industries. The professionalization of YouTube’s platform is paradigmatic of that change. The 100 original channel initiative launched in late 2011 was designed to transform YouTube’s brand through production of a high volume of quality premium video content that would more deeply engage its audience base and in the process attract big advertisers. An unanticipated by-product has been the rapid growth of a wave of aspiring next-generation digital media companies from within the YouTube ecosystem. Fuelled by early venture capital some have ambitious goals to become global media corporations in the online video space. A number of larger MCNs (Multi-Channel Networks) - BigFrame, Machinima, Fullscreen, AwesomenessTV, Maker Studios , Revision3 and DanceOn - have attracted interest from media incumbents like Warner Brothers, DreamWorks, Discovery, Bertlesmann, Comcast and AMC, and two larger MCNs Alloy and Break Media have merged. This indicates that a shakeout is underway in these new online supply chains, after rapid initial growth. The higher profile MCNs seek to rapidly develop scale economies in online distribution and facilitate audience growth for their member channels, helping channels optimize monetization, develop sustainable business models and to facilitate producer-collaboration within a growing online community of like-minded content creators. Some MCNs already attract far larger online audiences than any national TV network. The speed with which these developments have occurred is reminiscent of the 1910s, when Hollywood studios first emerged and within only a few years replaced the incumbent film studios as the dominant force within the film industry.

Thermal evolution of the submonolayer near-surface alloy of ZnPd on Pd (111)

We have performed a high-resolution synchrotron radiation photoelectron spectroscopy study of the initial growth stages of the ZnPd near-surface alloy on Pd(111), complemented by scanning tunnelling microscopy data. We show that the chemical environment for surfaces containing less than half of one monolayer of Zn is chemically distinct from subsequent layers. Surfaces where the deposition is performed at room temperature contain ZnPd islands surrounded by a substrate with dilute Zn substitutions. Annealing these surfaces drives the Zn towards the substrate top-layer, and favours the completion of the first 1 : 1 monolayer before the onset of growth in the next layer.

The critical period for weed control in dry-seeded rice

The critical crop-weed competition period in a dry-seeded rice system is an important consideration in formulating weed management strategies. Field experiments were conducted in the summer seasons of 2012 and 2013 at the Punjab Agricultural University, Ludhiana, India, to determine the extent of yield loss in two different rice cultivars (PR 114 and PR 115) with different periods of weed interference. Twelve weed control timings were used to identify critical periods of weed competition in dry-seeded rice. PR 114, a long-duration rice cultivar (145 d) having slower initial growth than PR 115 (125 d), was more prone to yield losses. In both years, 100% yield loss was observed where weeds were not controlled throughout the season. In weed-free plots, the grain yield of PR 114 was 6.39-6.80 t ha-1, for PR 115, it was 6.49-6.87 t ha-1. Gompertz and logistic equations fitted to yield data in response to increasing periods of weed control and weed interference showed that, PR 114 had longer critical periods than PR 115. Critical weed-free periods to achieve 95% of weed-free yield for PR 114 was longer than for PR 115 by 31 days in 2012 and 26 days in 2013. Weed infestation also influenced the duration of critical periods. Higher weed pressure in 2012 than in 2013 increased the duration of the critical period of crop-weed competition in that year. The identification of critical crop-weed competition periods for different cultivars will facilitate improved decision-making regarding the timing of weed control and the adoption of cultivars having high weed-suppressing abilities. This will also contribute to the development of integrated weed management in dry-seeded rice systems.

Effect of surfactants on the instability of a two-layer film flow down an inclined plane

The effect of insoluble surfactants on the instability of a two-layer film flow down an inclined plane is investigated based on the Orr-Sommerfeld boundary value problem. The study, focusing on Stokes flow P. Gao and X.-Y. Lu, ``Effect of surfactants on the inertialess instability of a two-layer film flow,'' J. Fluid Mech. 591, 495-507 (2007)], is further extended by including the inertial effect. The surface mode is recognized along with the interface mode. The initial growth rate corresponding to the interface mode accelerates at sufficiently long-wave regime in the presence of surface surfactant. However, the maximum growth rate corresponding to both interface and surface modes decelerates in the presence of surface surfactant when the upper layer is more viscous than the lower layer. On the other hand, when the upper layer is less viscous than the lower layer, a new interfacial instability develops due to the inertial effect and becomes weaker in the presence of interfacial surfactant. In the limit of negligible surface and interfacial tensions, respectively, two successive peaks of temporal growth rate appear in the long-wave and short-wave regimes when the interface mode is analyzed. However, in the case of the surface mode, only the long-wave peak appears. (C) 2014 AIP Publishing LLC.

离子束溅射法薄膜生长中结瘤微缺陷的生长机理

用离子束溅射法制备了锆单层薄膜．用设计新型夹具和预置种子方法，对薄膜中结瘤微缺陷的生长过程进行了研究．在高分辨率光学显微镜和扫描电子显微镜下观察发现，结瘤在其生长初期呈现出分形的特征．用分子动力学和薄膜生长的扩散限制聚集模型，薄膜中结瘤微缺陷成核时的分形现象得到了很好的解释．

Combustion rumble prediction with integrated computational-fluid-dynamics/ low-order-model methods

The pressure oscillation within combustion chambers of aeroengines and industrial gas turbines is a major technical challenge to the development of high-performance and low-emission propulsion systems. In this paper, an approach integrating computational fluid dynamics and one-dimensional linear stability analysis is developed to predict the modes of oscillation in a combustor and their frequencies and growth rates. Linear acoustic theory was used to describe the acoustic waves propagating upstream and downstream of the combustion zone, which enables the computational fluid dynamics calculation to be efficiently concentrated on the combustion zone. A combustion oscillation was found to occur with its predicted frequency in agreement with experimental measurements. Furthermore, results from the computational fluid dynamics calculation provide the flame transfer function to describe unsteady heat release rate. Departures from ideal one-dimensional flows are described by shape factors. Combined with this information, low-order models can work out the possible oscillation modes and their initial growth rates. The approach developed here can be used in more general situations for the analysis of combustion oscillations. Copyright © 2012 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD

The lateral epitaxial overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition, and the cross section shape of the stripes was characterized by scanning electron microscopy. Inclined {11-2n} facets (n approximate to 1-2.5) were observed in the initial growth, and they changed gradually into the vertical {11-20} sidewalls in accordance with the process of the lateral overgrowth. A model was proposed utilizing diffusion equations and boundary conditions to simulate the concentration of the Ga species constituent throughout the concentration boundary layer. Solutions to these equations are found using the two-dimensional, finite element method. We suggest that the observed evolution of sidewall facets results from the variation of the local V/III ratio during the process of lateral overgrowth induced by the lateral supply of the Ga species from the SiNx mask regions to the growing GaN regions.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

Control of cocklebur seed germination by nitrogenous compounds : Nitrite, nitrate, hydroxylamine, thiourea, azide and cyanide

Germination of non-dormant upper cocklebur (Xanthium pinsylvanicum Wallr.) seeds was stimulated by not only CS(NH2)2 but also NH2OH, KCN and NaN3. This stimulation was not via the enhancement of aerobic C2H4 production. NH2OH, KCN and NaN3 in certain concentrations promoted the initial growth of axial and/or cotyledonary parts, but the degree of growth promotion by NH2OH, NaN3 and KCN was slight compared with that by CS(NH2)2. As in the case of CS(NH2)2, however, the germinationstimulating effect of NH2OH disappeared rapidly as the preceding imbibition period was prolonged. In contrast, KCN and NaN3 were still effective in stimulating the germination of aged seeds maintained on a water substratum, as previously seen with anaerobiosis. Anaerobic induction was enhanced not only by NaN3 and KCN but also by NH2OH, KNO3, KNO2 CO(NH2)2 and CS(NH2)2 applied during the anaerobic treatment, but without causing an increase in anaerobic production of C2H4. Furthermore, KCN and NaN3, given prior to the anaerobic treatment acted additively with anaerobic induction. The germination-stimulating actions of nitrogenous compounds are discussed in comparison with those of C2H4 and anaerobiosis.

In situ electrochemical SERS studies on electrodeposition of aniline on 4-ATP/Au surface

The electrochemical polymerization of 0.01 M aniline in 1 M H2SO4 aqueous solution on roughened Au surface modified with a self-assembled monolayer (SAM) of 4-aminothiophenol (4-ATP) has been investigated by in situ electrochemical surface-enhanced Raman scattering spectroscopy (SERS). The repeat units and possible structures of the electrodeposited polyaniline (PANI) film were proposed; i.e., aniline monomer is coupled in head-to-tail predominately at the C-4 of aniline and amine of 4-ATP, and the thin PANI film is orientated vertically to substrate surface. Simultaneous Raman spectra during potential scanning indicate clearly that the ultrathin PANI film (in initial growth of the film) consists of semiquinone radical cation (IP+), para-disubstituted benzene (IP and IP+) and quinine diimine (NP) while it is oxidized, and without quinine diimine and semiquinone radical cation while reduced. Meanwhile, the results confirm that 4-ATP monolayer shows a strong promotion on the electrodeposition of aniline monomer, and a possible polymerization mechanism was proposed.

The dynamics of a topological change in a system of soap films

Hutzler, S., Saadatfar, M., van der Net, A., Weaire, D. and Cox, S.J. (2007) The dynamics of a topological change in a system of soap films. Coll. Surf. A, 323:123-131. Sponsorship: This research was supported by the European Space Agency (contracts 14914/02/NL/SH and 14308/00/NL/SH), Science Foundation Ireland. (RFP 05/REP/PHY00/6), and the EU program COST P21 (The Physics of droplets). SJC acknowledges support from EPSRC (EP/D071127/1). MS is supported by the Irish Higher Education Authority (PRTLI-IITAC).

The effects of thermo-electrically induced convection in alloy solidification

The effects of a constant uniform magnetic field on thermoelectric currents during dendritic solidification were investigated using a 2-dimensional enthalpy based numerical model. Using an approximation of the dendrite growing in free space it was found that the resulting Lorentz force generates a circulating flow influencing the solidification pattern. As the magnetic field strength increases it was found that secondary growth on the clockwise side of the primary arm of the dendrite was encouraged, while the anticlockwise side is suppressed due to a reduction in local free energy. The preferred direction of growth rotated in the clockwise sense under an anti-clockwise flow for both the binary alloy and pure material. The tip velociy is significantly increased compared to growth in stagnant flow. This is due to a small recirculation that follows the tip of the dendrite; bringing in colder liquid and lower concentrations of solute. The recirculation being not normally incident on the tip is most likely the cause for the rotation. Grain growth consisting of multiple seeds with the same anisotropy growing in the same plane, gives a competition to release latent heat resulting in stunted growth. The initial growth for each dendrite is very similar to the single seed cases indicating that dendrites must become before the thermoelectric interactions are significant.