Infrared broadband emission of bismuth-doped barium-aluminum-borate glasses

We report near infrared broadband emission of bismuth-doped barium-aluminum-borate glasses. The broadband emission covers 1.3 mum window in optical telecommunication systems. And it possesses wide full width at half maximum (FWHM) of similar to 200nm and long lifetime as long as 350 mus. The luminescent properties are quite sensitive to glass compositions and excitation wavelengths. Based on energy matching conditions, we suggest that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broad infrared emission characteristics of this material indicate that it might be a promising candidate for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Near infrared broadband emission of bismuth-doped aluminophosphate glass

Near infrared broadband emission characteristics of bismuth-doped aluminophosphate glass have been investigated. Broad infrared emissions peaking at 1210nm, 1173nm and 1300nm were observed when the glass was pumped by 405nm laser diode (LD), 514nm Ar+ laser and 808nm LD, respectively. The full widths at half maximum (FWHMs) are 235nm, 207nm and 300nm for the emissions at 1210nm, 1173nm and 1300nm, respectively. Based on the energy matching conditions, it is suggested that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broadband infrared luminescent characteristics of the glasses indicate that they are promising for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Simple and Efficient Near-Infrared Organic Chromophores for Light-Emitting Diodes with Single Electroluminescent Emission above 1000 nm

A series of NIR organic chromophores with donor-pi-acceptor-pi-donor structure are synthesized. Good thermal stability and strong photoluminescence in solid state render them suitable for application in light-emitting diodes. Exclusive near-infrared emission at 1080 nm with external quantum efficiency of 0.28% is obtained from the nondoped OLEDs. The longest electroluminescence wave-length is 1220 nm.

Broadband infrared luminescence from transparent glass-ceramics containing Ni2+-doped beta-Ga2O3 nanocrystals

Transparent Ni2+-doped beta-Ga2O3 glass-ceramics were synthesized. The nanocrystal phase in the glass-ceramics was identified to be beta-Ga2O3 and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni2+ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass-ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 mu s at room temperature. The observed infrared emission could be attributed to the T-3 (2g) (F-3) -> (3)A (2g) (F-3) transition of octahedral Ni2+ ions. It is suggested that the Ni2+-doped transparent beta-Ga2O3 glass-ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium.

Transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence

We report transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence. After heat-treatment, ZnAl2O4 crystallite was precipitated in the glasses, and its average size increased with increasing heat-treatment temperature. No infrared emission was detected in the as-prepared glass samples, while broadband infrared luminescence centered at 1310 nm with full width at half maximum (FWHM) of about 300 nm was observed from the glass-ceramics. The peak position of the infrared luminescence showed a blue-shift with increasing heat-treatment temperature, but a red-shift with an increase in NiO concentration. The mechanisms of the observed phenomena were discussed. These glass-ceramics are promising as materials for super broadband optical amplifier and tunable laser. (c) 2006 Elsevier Ltd. All rights reserved.

New transparent Er3+-doped oxyfluoride tellurite glass ceramic with improved near infrared and up-conversion fluorescence properties

Transparent glass ceramics have been obtained by nucleation and growth of Y2Te6O15 or Er2Te5O13 cubic phase in a new Er3+-doped oxyfluoride tellurite glass. Effect of beat treatment on absorption spectra, luminescence and up-conversion properties in the oxyfluoride tellurite glass has been investigated. With heat treatment the ultraviolet absorption edge red shifted evidently for the oxyfluoride telluride glass. The near infrared emission that corresponds to Er3+:I-4(13/2)-> I-4(15/2) can be significantly enhanced after heat treatment. Under 980 nm LD pumping, red and green up-conversion intensity of Er3+ in the glass ceramic can be observed much stronger than that in the base glass. (C) 2006 Elsevier B.V. All rights reserved.

Transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence

We report on transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence. Ni2+-doped MgO-Al2O3-SiO2 glass is Prepared by using the conventional method. After heat treatment at high temperature, MgAl2O4 crystallites are precipitated, and their average size is about 4.3nm. No luminescence is detected in the as-prepared glass sample, while broadband infrared luminescence centred at around 1315nm with full width at half maximum (FWHM) of about 300nm is observed from the glass ceramics. The observed infrared emission could be attributed to the T-3(2g)(F-3) -> (3)A(2g)(F-3) transition of octahedral Ni2+ ions in the MgAl2O4 crystallites of the transparent glass ceramics. The product of the fluorescence lifetime and the stimulated emission cross section is about 1.6 X 10(-24) s cm(2).

UV-blue upconverted emission from Nd3+-doped InF3-based heavy-metal fluoride glasses for blue upconversion fibre laser

We report spectral properties and thermal stability of Nd3+-doped InF3-based heavy-metal fluoride glasses. Fluoroindate glasses in the chemical compositions (in mol%) of (38-x)InF3-16BaF(2)-20ZnF(2)-20SrF(2)-3GdF(3)-1GaF(3-)2NaF-xNdF(3) (x = 0.1, 0.5, 1, 2, 3) have been prepared under a controlled atmosphere in a dry box. Strong UVblue upconversion emission from a green excitation wavelength has been observed and the involved mechanisms have been explained. Near-infrared emission occurs simultaneously upon excitation of the UV-blue upconversion emissions with a cw Ar(+)laser. The upconversion spectra have revealed four dominant emissions at 354, 380, 412 and 449 nm, which belong to the transitions of D-4(3/2) -> I-4(9/2), D-4(3/2) -> I-4(11/2) and P-2(3/2) -> I-4(9/2), D-4(3/2) -> I-4(13/2) and P-2(3/2) -> I-4(11/2), D-4(3/2) -> I-4(15/2) and P-2(3/2) -> I-4(13/2), respectively.

Enhanced broadband near-infrared luminescence from transparent Yb 3+/Ni2+ codoped silicate glass ceramics

The near-infrared emission intensity of Ni2+ in Yb3+/Ni2+ codoped transparent MgO-Al2O3-Ga2O3-SiO2-TiO2 glass ceramics could be enhanced up to 4.4 times via energy transfer from Yb3+ to Ni2+ in nanocrystals. The best Yb2O3 concentration was about 1.00 mol%. For the Yb3+/Ni2+ codoped glass ceramic with 1.00 mol% Yb2O3, a broadband near-infrared emission centered at 1265 nm with full width at half maximum of about 300 nm and lifetime of about 220 mu s was observed. The energy transfer mechanism was also discussed. (C) 2008 Optical Society of America.

Enhanced broadband near-infrared luminescence in transparent silicate glass ceramics containing Yb3+ ions and Ni2+-doped Li Ga5 O8 nanocrystals

Spectral properties of Yb3+/Ni2+ codoped transparent silicate glass ceramics containing LiGa5O8 nanocrystals were investigated. The near-infrared emission intensity of Ni2+ was largely increased with Yb3+ codoping due to Yb3+-> Ni2+ energy transfer. The qualitative calculation of the energy transfer constant Cs-a and rate Ps-a showed that the Yb3+-> Ni2+ energy transfer was much greater than in the opposite direction. Yb3+/Ni2+ codoped glass ceramics with 0.75 mol % Yb2O3 exhibited a near-infrared emission with full width at half maximum of 290 nm and fluorescent lifetime of 920 mu s. The glass ceramics are promising for broadband optical amplification.

Infrared (1.2-1.6 mu m) luminescence in Yb, Cr : YAG with 940 nm diode pumping

Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Enhanced infra-red emission from sub-millimeter microelectromechanical systems micro hotplates via inkjet deposited carbon nanoparticles and fullerenes

In this paper, we demonstrate a micro-inkjet printing technique as a reproducible post-process for the deposition of carbon nanoparticles and fullerene adlayers onto fully CMOS compatible micro-electro-mechanical silicon-on-insulator infrared (IR) light sources to enhance their infrared emission. We show experimentally a significant increase in the infrared emission efficiency of the coated emitters. We numerically validate these findings with models suggesting a dominant performance increase for wavelengths <5.5 μm. Here, the bimodal size distribution in the diameter of the carbon nanoparticles, relative to the fullerenes, is an effective mediator towards topologically enhanced emittance of our miniaturised emitters. A 90% improvement in IR emission power density has been shown which we have rationalised with an increase in the mean thickness of the deposited carbon nanoparticle adlayer. © 2013 AIP Publishing LLC.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

1.54 mu m infrared photoluminescence and electroluminescence from an erbium organic compound

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].