The turbulent rotating-disk boundary layer

© 2014 Elsevier Masson SAS. All rights reserved. The turbulent boundary layer on a rotating disk is studied with the aim of giving a statistical description of the azimuthal velocity field and to compare it with the streamwise velocity of a turbulent two-dimensional flat-plate boundary layer. Determining the friction velocity accurately is particularly challenging and here this is done through direct measurement of the velocity distribution close to the rotating disk in the very thin viscous sublayer using hot-wire anemometry. Compared with other flow cases, the rotating-disk flow has the advantage that the highest relative velocity with respect to a stationary hot wire is at the wall itself, thereby limiting the effect of heat conduction to the wall from the hot-wire probe. Experimental results of mean, rms, skewness and flatness as well as spectral information are provided. Comparison with the two-dimensional boundary layer shows that turbulence statistics are similar in the inner region, although the rms-level is lower and the maximum spectral content is found at smaller wavelengths for the rotating case. These features both indicate that the outer flow structures are less influential in the inner region for the rotating case.

Parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition

The effects of deposition gas pressure and H-2 dilution ratio (H-2/SiH4+CH4+H-2), generally considered two of dominant parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD method, on the films properties have been systematically studied. As deposition gas pressure increase from 40 to 1000 Pa, the crystallinity of the films is improved. From the study of H-2 dilution ratio, it is considered that H-2 plays a role as etching gas and modulating the phases in beta-SiC thin films. On the basis of the study on the parameters, nanocrystalline beta-SiC films were successfully synthesized on Si substrate at a low temperature of 300degreesC. The Fourier Transform Infrared Spectroscopy (FTIR) and X-ray diffraction (XRD) spectra show formation of beta-SiC. Moreover, according to Sherrer equation, the average grain size of the films estimated is in nanometer-size. (C) 2003 Elsevier B.V. All rights reserved.

The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile

The hydrogen dilution profiling (HDP) technique has been developed to improve the quality and the crystalline uniformity in the growth direction of mu c-Si:H thin films prepared by hot-wire chemical-vapor deposition. The high H dilution in the initial growth stage reduces the amorphous transition layer from 30-50 to less than 10 nm. The uniformity of crystalline content X-c in the growth direction was much improved by the proper design of hydrogen dilution profiling which effectively controls the nonuniform transition region of Xc from 300 to less than 30 nm. Furthermore, the HDP approach restrains the formation of microvoids in mu c-Si: H thin films with a high Xc and enhances the compactness of the film. As a result the stability of mu c-Si: H thin films by HDP against the oxygen diffusion, as well as the electrical property, is much improved. (c) 2005 American Institute of Physics.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.

Study on growth mechanism of low-temperature prepared microcrystalline Si thin films

Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures

Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.

Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon

Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from similar to 2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1).

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

The influence of compliant surfaces on bypass transition', Experiments in Fluids

The objective of the work was to investigate the effect of compliant surfaces on the receptivity and bypass transition of a boundary layer. Hot wire measurements in the pre-transitional and transitional boundary layers on nine different compliant and one rigid surface with identical geometries were made. The experiments were conducted in air and the compliant surfaces were manufactured from gelatine covered by a 10 lm protective PVC film. The laminar boundary layer profiles and growth rate results were the same for all the surfaces. However, the receptivity of the laminar boundary layer to freestream disturbances increased close to the leading edge of each compliant surface. Further downstream the majority of the compliant surfaces were successful in reducing the receptivity to a value below that for the rigid surface. The transition onset position on the compliant surfaces ranged from 3% downstream to 20% upstream of the rigid surface position. It was concluded that compliant surfaces with optimum properties can reduce receptivity and delay transition.

Thermal conductivities of ionic liquids over the temperature range from 293 K to 353 K

The thermal conductivities of 11 ionic liquids were determined, over the temperature range from 293 K to 353 K, at atmospheric pressure, using an apparatus based on the transient hot-wire method. For each of the ionic liquids studied, the thermal conductivities were found to be between (0.1 and 0.2) W.m(-1).K-1, with a slight decrease observed on increasing temperature. The uncertainty is estimated to be less than +/- 0.002 W.m(-1).K-1. In all cases, a linear equation was found to give a good fit to the data. The effects of water content and chloride content on the thermal conductivities of some of the ionic liquids were investigated. In each case, the thermal conductivities of the water + ionic liquid and chloride + ionic liquid binary mixtures were found to be less than the weighted average of the pure component thermal conductivities. This effect was adequately modeled using the Jamieson correlation. Chloride contamination at typical postsynthesis levels was found to have no significant effect on the thermal conductivities of the ionic liquid studied.

Experimental analysis of air flow profiles in a double skin facade in a maritime climate

Glazed Double Skin Facades (DSF) offer the potential to improve the performance of all-glass building skins, common to commercial office buildings in which full facade glazing has almost become the standard. Single skin glazing results in increased heating and cooling costs over opaque walls, due to lower thermal resistance of glass, and the increased impact of solar gain through it. However, the performance benefit of DSF technology continues to be questioned and its operation poorly understood, particularly the nature of airflow through the cavity. This paper deals specifically with the experimental analysis of the air flow characteristics in an automated double skin façade. The benefit of the DSF as a thermal buffer, and to limit overheating is evaluated through analysis of an extensive set of parameters including air and surface temperatures at each level in the DSF, airflow readings in the cavity and at the inlet and outlet, solar and wind data, and analytically derived pressure differentials. The temperature and air-flow are monitored in the cavity of a DSF using wireless sensors and hot wire anemometers respectively. Automated louvre operation and building set-points are monitored via the BMS. Thermal stratification and air flow variation during changing weather conditions are shown to effect the performance of the DSF considerably and hence the energy performance of the building. The relative pressure effects due to buoyancy and wind are analysed and quantified. This research aims to developed and validate models of DSFs in the maritime climate, using multi-season data from experimental monitoring. This extensive experimental study provides data for training and validation of models.

Analyse selbsterregter Strömungsfelder im Verdichter-Leitrad durch Kopplung von Particle Image Velocimetry und Hitzdrahtanemometrie mittels Fast Fourier Transformation

Der Einsatz der Particle Image Velocimetry (PIV) zur Analyse selbsterregter Strömungsphänomene und das dafür notwendige Auswerteverfahren werden in dieser Arbeit beschrieben. Zur Untersuchung von solchen Mechanismen, die in Turbo-Verdichtern als Rotierende Instabilitäten in Erscheinung treten, wird auf Datensätze zurückgegriffen, die anhand experimenteller Untersuchungen an einem ringförmigen Verdichter-Leitrad gewonnen wurden. Die Rotierenden Instabilitäten sind zeitabhängige Strömungsphänomene, die bei hohen aerodynamischen Belastungen in Verdichtergittern auftreten können. Aufgrund der fehlenden Phaseninformation kann diese instationäre Strömung mit konventionellen PIV-Systemen nicht erfasst werden. Die Kármánsche Wirbelstraße und Rotierende Instabilitäten stellen beide selbsterregte Strömungsvorgänge dar. Die Ähnlichkeit wird genutzt um die Funktionalität des Verfahrens anhand der Kármánschen Wirbelstraße nachzuweisen. Der mittels PIV zu visualisierende Wirbeltransport erfordert ein besonderes Verfahren, da ein externes Signal zur Festlegung des Phasenwinkels dieser selbsterregten Strömung nicht zur Verfügung steht. Die Methodik basiert auf der Kopplung der PIV-Technik mit der Hitzdrahtanemometrie. Die gleichzeitige Messung mittels einer zeitlich hochaufgelösten Hitzdraht-Messung ermöglicht den Zeitpunkten der PIV-Bilder einen Phasenwinkel zuzuordnen. Hierzu wird das Hitzdrahtsignal mit einem FFT-Verfahren analysiert, um die PIV-Bilder entsprechend ihrer Phasenwinkel zu gruppieren. Dafür werden die aufgenommenen Bilder auf der Zeitachse der Hitzdrahtmessungen markiert. Eine systematische Analyse des Hitzdrahtsignals in der Umgebung der PIV-Messung liefert Daten zur Festlegung der Grundfrequenz und erlaubt es, der markierten PIV-Position einen Phasenwinkel zuzuordnen. Die sich aus den PIV-Bildern einer Klasse ergebenden Geschwindigkeitskomponenten werden anschließend gemittelt. Aus den resultierenden Bildern jeder Klasse ergibt sich das zweidimensionale zeitabhängige Geschwindigkeitsfeld, in dem die Wirbelwanderung der Kármánschen Wirbelstraße ersichtlich wird. In hierauf aufbauenden Untersuchungen werden Zeitsignale aus Messungen in einem Verdichterringgitter analysiert. Dabei zeigt sich, dass zusätzlich Filterfunktionen erforderlich sind. Im Ergebnis wird schließlich deutlich, dass die Übertragung der anhand der Kármánschen Wirbelstraße entwickelten Methode nur teilweise gelingt und weitere Forschungsarbeiten erforderlich sind.