Surfactant-mediated Synthesis of Functional Metal Oxide Nanostructures via Microwave Irradiation-assisted Chemical Synthesis

Nanostructured materials have attracted considerable interest in recent years due to their properties which differ strongly from their bulk phase and potential applications in nanoscale electronic and optoelectronic devices. Metal oxide nanostructures can be synthesized by variety of different synthesis techniques developed in recent years such as thermal decomposition, sol-gel technique, chemical coprecipitation, hydrothermal process, solvothermal process, spray pyrolysis, polyol process etc. All the above processes go through a tedious synthesis procedure followed by prolonged heat treatment at elevated temperature and are time consuming. In the present work we describe a rapid microwave irradiation-assisted chemical synthesis technique for the growth of nanoparticles, nanorods, and nanotubes of a variety of metal oxides in the presence of an appropriate surfactant, without the use of any templates The method is simple, inexpensive, and helps one to prepare nanostructures in a very simple way, and in a very short time, measured in minutes. The synthesis procedure employs high quality metalorganic complexes (typically -diketonates) featuring a direct metal-to-oxygen bond in its molecular structure. The complex is dissolved in a suitable solvent, often with a surfactant added, and the solution then subjected to microwave irradiation in a domestic microwave oven operating at 2.45 GHz frequency with power varying from 160-800 W, from a few seconds to a few minutes, leading to the formation of corresponding metal oxides. This method has been used successfully to synthesize nanostructures of a variety of binary and ternary metal oxides such as ZnO, CdO, Fe2O3, CuO, Ga2O3, Gd2O3, ZnFe2O4, etc. There is an observed variation in the morphology of the nanostructures with the change of different parameters such as microwave power, irradiation time, appropriate solvent, surfactant type and concentration. Cationic, anionic, nonionic and polymeric surfactants have been used to generate a variety of nanostructures. Even so, to remove the surfactant, there is either no need of heat treatment or a very brief exposure to heat suffices, to yield highly pure and crystalline oxide materials as prepared. By adducting the metal complexes, the shape of the nanostructures can be controlled further. In this manner, very well formed, single-crystalline, hexagonal nanorods and nanotubes of ZnO have been formed. Adducting the zinc complex leads to the formation of tapered ZnO nanorods with a very fine tip, suitable for electron emission applications. Particle size and their monodispersity can be controlled by a suitable choice of a precursor complex, the surfactant, and its concentration. The resulting metal oxide nanostructures have been characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, FTIR spectroscopy, photoluminescence, and electron emission measurements.

Mechanochemical decomposition of Gd3Fe5O12 garnet phase

Gadolinium iron garnet was milled in a high energy ball mill to study its magnetic properties in the nanocrystalline regime. XRD reveals the decomposition of the garnet phase into Gd-orthoferrite and Gd2O3 on milling. The variation of saturation magnetization and coercivity with milling is attributed to a possible shift in the compensation temperature on grain size reduction and an increase in the orthoferrite content. The Mössbauer spectrum at 16 K is characteristic of the magnetically ordered state corresponding to GdIG, GdFeO3 and α-Fe2O3 whereas at room temperature it is a superparamagnetic doublet.

A comparative study of erbium oxide and gadolinium oxide high-k dielectric thin films grown by low-pressure metalorganic chemical vapour deposition (MOCVD) using beta-Diketonates as precursors

In this paper, a comparative study of thin films of Er2O3 and Gd2O3 grown on n-type Si(100) by low-pressure metalorganic chemical vapour deposition (MOCVD) under the identical conditions has been presented. beta-Diketonate complex of rate earth metals was used as precursor. Description on the evolution of the morphology, structure, optical, and electrical characteristics of films with respect to growth parameters and post-deposition annealing process has been presented. As-gown Gd2O3 films grow with <111> texture, whereas the texture of Er2O3 films strongly depends on the growth temperature (either <100> or <111>). Compositional analysis reveals that the Gd2O3 films grown at or above 500degreesC are carbon free whereas Er2O3 films at upto 525degreesC show the presence of heteroatoms and Er2O3 films grown above 525degreesC are carbon five. The effective dielectric constant is in the range of 7-24, while the fixed charge density is in the range - 10(11) to 10(10) CM-2 as extracted from the C-V characteristics. DC I-V study was carried out to examine the leakage behaviour of films. It reveals that the as-grown Gd2O3 film was very leakey in nature. Annealing of the films in oxidizing ambient for a period of 20 min results in a drastic improvement in the leakage behaviour. The presence of heteroatoms (such as carbon) and their effect on the properties of films are discussed.

System Gd-Rh-O: Thermodynamics and phase relations

Thermodynamic properties of GdRhO3 are investigated in the temperature range from 900 to 1300 K by employing a solid-state electrochemical cell, incorporating calcia-stabilized zirconia as the electrolyte. The standard Gibbs free energy of formation of GdRhO3 from component binary oxide Gd2O3 with C-rare earth structure and Rh2O3 with orthorhombic structure can be expressed as; Delta G(f(ox))(o)(+/- 60)/J mol(-1) = -56603 + 3.78(T/K) Based on the thermodynamic information on GdRhO3 from experiment and auxiliary data for binary oxides from the literature and estimated properties of Gd-Rh alloys, phase relations are computed for the system Gd-Rh-O at 1273 K. Gibbs free energies for intermetallic phases in the binary Gd-Rh are evaluated using calorimetric data available in the literature for two compositions and Miedema's model, consistent with the binary phase diagram. Isothermal section of the ternary phase diagram, oxygen potential-composition diagram and a 3-D chemical potential diagram for the system Gd-Rh-O at 1273 K are developed. Phase relations in the ternary Gd-Rh-O are also computed as a function of temperature at constant oxygen partial pressures. The ternary oxide, GdRhO3 decomposes to Gd2O3 with B-rare earth structure, metallic Rh and O-2 at 1759(+/- 2) K in pure O-2 and 1649(+/- 2) K in air at a total pressure P-0 -0.1 MPa. (c) 2012 Elsevier B.V. All rights reserved.

Citrate-complexation synthesized Ce0.85Gd0.15O2-delta (GDC15) as solid electrolyte for intermediate temperature SOFC

A typical Ce0.85Gd0.15O2-delta (CDC15) composition of CeO2-Gd2O3 system is synthesized by modified sol - gel technique known as citrate-complexation. TG-DTA, XRD, FT-IR, Raman, FE-SEM/EDX and ac impedance analysis are carried out for structural and electrical characterization. XRD pattern confirmed the well crystalline cubic fluorite structure of CDC15 after calcining at 873 K. Raman spectral bands at 463, 550 and 600 cm(-1) are also in agreement with these structural features. FE-SEM image shows well-defined grains separated from grain boundary and good densification. Ac impedance studies reveal that GDC15 has oxide ionic conductivity similar to that reported for Ce0.9Gd0.1O2-delta (GDC10) and Ce0.8Gd0.2O2-delta (GDC20). Ionic and electronic transference numbers at 673 K are found to be 0.95 and 0.05, respectively. This indicates the possible application of GDC15 as a potential electrolyte for IT-SOFCs. (C) 2014 Elsevier B.V. All rights reserved.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Effect of a feeding stimulant on feeding adaptation of gibel carp Carassius auratus gibelio (Bloch), fed diets with replacement of fish meal by meat and bone meal

The objectives of the study were to investigate the effect of a feeding stimulant on feeding adaptation of gibel carp (Carassius auratus gibelio Bloch) fed diets with replacement of fish meal by meat and bone meal (MBM), and whether or not the juvenile gibel carp could adapt to higher MBM level in the diet. Juvenile and adult gibel carp were tested. Two and one replacement levels were used for juvenile and adult fish respectively. Each group of diets was set as two types with or without a unique rare earth oxide: Y2O3, Yb2O3, La2O3, Sm2O3, Nd2O3 or Gd2O3 (only the first four rare earth oxides were used in adult diets) for four adaptation periods of 3, 7, 14 and 28 days respectively. After mixing, an equal mixture of all six diets for juvenile or four diets for adult was offered in excess for 2 days. During the last 2 days of each experiment, no feed was offered and faeces from each tank were collected. Feeding preference was expressed as relative feed intake of each diet, which was estimated based on the relative concentration of each marker in the faeces. Given some adaptation period, such as 3-28 days, the effects of MBM and squid extract inclusion on the preference to each diet were reduced. After 28 days adaptation, the preferences between groups were not significantly different.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film

A stoichiometric Gd2O3-x thin film has been grown on a silicon (10 0) substrate with a low-energy dual ion-beam epitaxial technique. Gd2O3-x shares Gd2O3 structures although there are many oxygen deficiencies in the film. The photoluminescence (PL) measurements have been performed in a temperature range 5-300 K. The detailed characters of the peak position, the full-width at half-maximum (FWHM) and the peak intensity at different temperature were reported. An anomalous intensity behavior of the PL spectra has been observed, which is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Therefore, we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and employ the model of singlet-triplet exchange splitting of exciton to discuss the four peaks observed in the experiment. (C) 2003 Elsevier B.V. All rights reserved.

Photoluminescence behaviors from stoichiometric gadolinium oxide films

Stoichiometric gadolinium oxide thin films have been grown on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Gadolinium oxide shares Gd2O3 structures although the ratio of gadolinium and oxygen in the film is about 2:1 and a lot of oxygen deficiencies exist. Photoluminescence (PL) measurements have been carried out within a temperature range of 5-300 K. The detailed characters of the PL emission integrated intensity, peak position, and peak width at different temperature were reported and an anomalous photoluminescence behavior was observed. The character of PL emission integrated intensity is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Four peaks relative to alpha band and beta band were observed also. Therefore we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and the model of singlet-triplet exchange splitting of exciton was employed for discussion. (C) 2003 American Institute of Physics.

GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Semiconducting gadolinium silicide GdxSi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. Auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick GdxSi film. X-ray double-crystal diffraction measurement shows that there is no new phase formed. The XPS spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal Gd and Gd2O3. All of these results indicate that an amorphous semiconductor is formed. (C) 2002 Elsevier Science B.V. All rights reserved.

稀土功能薄膜的离子束外延法制备生长研究

介绍了一种利用离子束外延（Ion-beam Epitaxy, IBE）技术制备生长高纯稀土功能薄膜的新方法. 以纯度要求不高的低成本稀土氯化物为原材料来产生大束流稀土元素离子, 通过准确控制双束合成或单束浅结注入掺杂的同位素纯低能离子的能量、束斑形状、沉积剂量与配比及生长温度, 在超高真空生长室内实现了稀土功能薄膜的高纯生长和低温优质外延. 文中除了对新方法的技术特点、实施方式和应注意的关键技术进行了阐述, 还结合CeO2, Gd2O3, GdxSi1-x等薄膜的制备研究, 讨论了离子的束流密度、剂量配比、能量和生长温度等生长参数对成膜质量的影响.

二元高－k材料研究进展及制备

随着大规模集成电路的发展，需要一种高介质材料来代替传统的SiO2,介绍了可能替代SiO2的几种二元材料的研究现状，主要包括Si3N4,Ta2O5,TiO2,ZrO2,Y2O3,Gd2O3和CeO2几种材料的结构和电学性能，以及制备薄膜的几种方法；蒸发法，化学气相沉积和离子束沉积。

Enhanced photoluminescence of Ba2GdNbO6: Eu3+/Dy3+ phosphors by Li+ doping

The Ba2GdNbO6: Eu3+/Dy3+ and Li+-doped Ba2GdNbO6: Eu3+/Dy3+ phosphors were prepared by solid-state reaction process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and photoluminescence (PL) as well as lifetimes, was utilized to characterize the resulting phosphors. Under the excitation of ultraviolet light, the Ba2GdNbO6: Eu3+/Dy3+ and Li+-doped Ba2GdNbO6: Eu3+/Dy3+ show the characteristic emissions of Eu3+ (D-5(0)-F-7(1,2,3) transitions dominated by D-5(0)-F-7(1) at 593 nm) and Dy3+ (F-4(9/2)-H-6(15/2),(13/2) transitions dominated by F-4(9/2)-H-6(15/2) at 494 nm), respectively. The incorporation of Li+ ions into the Ba2GdNbO6: Eu3+/Dy3+ phosphors has enhanced the PL intensities depending on the doping concentration of Li+, and the highest emission was obtained in Ba2Gd0.9NbO6: 0.10Eu(3+), 0.01Li(+) and Ba2Gd0.95NbO6: 0.05Dy(3+), 0.07Li(+), respectively. An energy level diagram was proposed to explain the luminescence process in the phosphors.

球形Gd_2O_3:Eu纳米发光材料的制备

引言自1966年提出用Gd2O3∶Eu红粉代替以往红粉以来,Gd2O3∶Eu被用于高清晰度电视、投影电视、平板显示、绿色照明工程等所需的高效优质发光材料,由于其光视效能较以往的红粉大大提高,因此得到了广泛的关注[1~3]。商用荧光粉一般采用高温固相法合成,颗粒一般为微米级且形状不规则。近年来,由于纳米科技的发展,以及纳米材料所具有的特异的光学性质[4,5],纳米发光材料引起了越来越多的科研工作者的关注。纳米级的Gd2O3∶Eu发光材料的主要合成方法有:燃烧法[6]、配合物前驱体热分解法[7,8]、超声化学法[9]等,采用以上方法制备的纳米Gd2O3∶Eu颗粒形状较不规则。发光材料的发光性能与其形态有很大关系,球形颗粒可以提高其密堆性,从而提高其发光亮度。并且荧光粉涂屏工艺的要求也迫切需要合成球形的荧光粉。均相沉淀法可以通过改变条件很好的控制所合成颗粒的形貌[10]。本文采用均相沉淀法制备了规则球形的纳米级的Gd2O3∶Eu发光材料,对其形成机理进行了讨论,并通过光谱研究对纳米Gd2O3∶Eu颗粒和体相材料的光谱进行了比较。1实验部分1.1仪器和药品氧化钆(99.99%,上海跃龙),氧化铕(99.99%,上海...