Decreased GA1 Content Caused by the Overexpression of OSH1 Is Accompanied by Suppression of GA 20-Oxidase Gene Expression

We previously reported that overexpression of the rice homeobox gene OSH1 led to altered morphology and hormone levels in transgenic tobacco (Nicotiana tabacum L.) plants. Among the hormones whose levels were changed, GA1 was dramatically reduced. Here we report the results of our analysis on the regulatory mechanism(s) of OSH1 on GA metabolism. GA53 and GA20, precursors of GA1, were applied separately to transgenic tobacco plants exhibiting severely changed morphology due to overexpression of OSH1. Only treatment with the end product of GA 20-oxidase, GA20, resulted in a striking promotion of stem elongation in transgenic tobacco plants. The internal GA1 and GA20 contents in OSH1-transformed tobacco were dramatically reduced compared with those of wild-type plants, whereas the level of GA19, a mid-product of GA 20-oxidase, was 25% of the wild-type level. We have isolated a cDNA encoding a putative tobacco GA 20-oxidase, which is mainly expressed in vegetative stem tissue. RNA-blot analysis revealed that GA 20-oxidase gene expression was suppressed in stem tissue of OSH1-transformed tobacco plants. Based on these results, we conclude that overexpression of OSH1 causes a reduction of the level of GA1 by suppressing GA 20-oxidase expression.

Haemonchus contortus GA1 antigens: related, phospholipase C-sensitive, apical gut membrane proteins encoded as a polyprotein and released from the nematode during infection.

It was previously shown that the Haemonchus contortus apical gut surface proteins p46, p52, and p100 induced protective immunity to challenge infections in goats. Here, it is shown that the three proteins are all encoded by a single gene (GA1) and initially expressed in adult parasites as a polyprotein (p100GA1). p46GA1 and p52GA1 are related proteins with 47% sequence identity, including a cysteine-containing region, which appears to confer secondary structure to these proteins, and a region with sequence similarity to bacterial Tolb proteins. GA1 protein expression is regulated during the life cycle at the level of transcript abundance. Only p52GA1 has characteristics of a glycosylinositolphospholipid membrane-anchored protein. However, both p46GA1 and p52GA1 were released from the gut membrane by phosphatidylinositol specific-phospholipase C, suggesting that p46GA1 membrane association depends on interactions with a glycosylinositolphospholipid gut membrane protein. Finally, GA1 proteins occur in abomasal mucus of infected lambs, demonstrating possible presentation to the host immune system during H. contortus infection. The results identify multiple characteristics of the GA1 proteins that should be considered for design of recombinant antigens for vaccine trials and that implicate a series of cellular processes leading to modification and expression of GA1 proteins at the nematode apical gut surface.

Carbohydrate binding specificity of the basic lectin from winged bean (Psophocarpus tetragonolobus)

The carbohydrate binding specificity of the basic lectin from winged bean (Psophocarpus tetragonolobus) was investigated by quantitative precipitin analysis using blood group A, B, H, Le and I substances and by precipitation inhibition with various mono- and oligosaccharides. The lectin precipitated best with A1 substances and moderately with B and A2 substances, but not with H or Le substances. Inhibition assays of lectin-blood group A1 precipitation demonstration that A substance-derived oligosaccharides having the common structure: d-Ga1NAcα(1 → 3)d-Gal-(β1 → Image ) to a d-Glc, were the best inhibitors and about 8 and 4 times more active than d-Ga1NAc and d-Ga1NAcα(1 → 3)d-Ga1, respectively. A difucosyl A-specific oligosaccharide (A-penta), a monofucosyl (A-tetra) and a non-fucosyl containing (A5 II) oligosaccharide, d-Ga1NAcα(1 → 3)d-Ga1β(1 → 3)d-G1cNAc, had almost the same reactivity, suggesting that the fucose linked to the sub-terminal d-Ga1 or to the third sugar, d-GlcNAc, from the non-reducing end made no contribution to the carbohydrate binding. Although a terminal non-reducing d-Ga1NAc or d-Ga1 residue was indispensible for binding, the lectin bound not only to these terminal non-reducing galactopyranosyl residues, but also showed increased binding to oligosaccharides in which it was bonded to a sub-terminal d-Ga1 joined to a d-GlcNAc residue, as in blood group A or B substances. This defines the site, thus far, as complementary to a disaccharide plus the β linkage to the third sugar (d-Glc or d-GlcNAc) from the non-reducing end. The role of the β(1 → 3) or β(1 → 4) linkage of the sub-terminal non-reducing d-Gal to the d-GlcNAc requires further study.

Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals

Ga1-xMnxSb crystals are grown with different Mn doping concentrations by the horizontal Bridgman method (x = 0 - 0.04). Optical absorption and photoluminescence studies are carried out in the temperature range 3-300 K. Optical absorption studies reveal that the inter-valence band transition from the spin-orbit split-off band to the light/heavy hole bands is dominant over the fundamental valence band to conduction band absorption. In higher doped crystals, the fundamental absorption peak is merged with the inter-valence band transition and could not be resolved. Photoluminescence measurements in heavily doped crystals reveal the band gap narrowing and band filling effects due to the Fermi level shifting into the valence band.

Electron paramagnetic resonance studies on Mn doped GaSb

We report on the X-band (similar to 9.43 GHz) electron paramagnetic resonance (EPR) investigations carried out on polycrystalline Ga1-xMnxSb (x=0.02). A strong EPR signal with an effective g factor (g(eff)) close to 2.00 was observed, suggesting that the ionic state of Mn which replaces Ga ion in the lattice, is Mn2+ attributable to Delta M=1 transition of the ionized Mn acceptor A(-), Mn (3d(5)). The apparent absence of EPR signal, typical for neutral Mn acceptor at g=2.7 suggests either no such centers are present or the signal broadens beyond detection limit. The temperature dependent EPR studies combined with dc magnetization data suggest the possible coexistence of antiferromagnetic and ferromagnetic phases at very low temperatures. (C) 2011 American Institute of Physics. doi:10.1063/1.3543983]

Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed

Síntese e estudo das propriedades luminescentes do SrGa2O4 dopado com íons de Cr3+

Amostras policristalinas de Sr(Ga1-xCrx)2O4 com x = 0,01 foram estequiometricamente preparadas pela mistura dos materiais em pó SrCO3, Ga2O3 e Cr2O3. A estrutura cristalina da amostra dopada foi analisada pelas medidas de difração de raios-X. O padrão de difração revelou uma única fase relacionada a fase monoclínica do SrGa2O4. Os dados foram ajustados usando o Método de Rietveld para refinamento de estruturas e os parâmetros da rede foram determinados. A luminescência do íon de Cr3+ na rede do SrGa2O4 foi investigada pelas espectroscopias de excitação e emissão a temperatura ambiente, através das quais verificamos que os íons de Cr3+ estão localizados em dois sítios diferentes. Os espectros de emissão apresentam bandas largas associadas à transição eletrônica 4T2(4F) → 4A2(4F) para ambos os sítios. Estes resultados são analisados pela teoria de campo cristalino e o parâmetro de campo cristalino Dq e os parâmetros de Racah B e C são determinados pelas posições das bandas de excitação. A partir destes parâmetros determinamos um campo cristalino forte para ambos os sítios. Além disto, foram realizadas medidas de espectroscopia fotoacústica que confirmaram as transições identificadas e estimadas nos espectros de excitação.

查尔酮异构酶基因过表达对新疆雪莲类黄酮生物合成的调控

新疆雪莲（Saussurea involucrata Kar. et Kir.）是我国名贵中药材，其主要药用活性成分为黄酮类化合物。目前人们对新疆雪莲及它的黄酮类化合物的需求日益增多，但雪莲的人工栽培技术尚未成熟，在野生状态下，新疆雪莲只能生长在海拔4,000到5,000米的雪山上，现在由于过度采挖已濒临灭绝。为解决雪莲资源匮乏，提高雪莲中黄酮类成分的含量，本研究通过基因工程手段利用发根农杆菌将黄酮代谢途径中的关键酶－查尔酮异构酶（CHI）基因导入新疆雪莲，产生转基因新疆雪莲毛状根及再生苗，以期提高新疆雪莲的黄酮类物质含量，进行新疆雪莲黄酮类物质的生产。主要结果如下： 　　1．对克隆到的水母雪莲查尔酮异构酶基因（Smchi）进行功能分析。转Smchi正义、反义烟草的CHI酶活性实验结果表明，转Smchi正义的烟草CHI酶活性比对照提高3-6倍，而转反义Smchi基因的烟草CHI酶活性比对照则显著降低。分析不同株系的转基因烟草和对照烟草的黄酮含量和花色素含量表明，转Smchi正义的烟草积累比对照显著增高水平的总黄酮，其中株系CS-5黄酮含量是对照的6倍，转Smchi反义的烟草则积累较低水平的总黄酮，而且转基因烟草的总黄酮含量与Smchi基因的表达水平和CHI酶活性成正相关。但不论转Smchi基因正义或反义方向的烟草，其花色素含量和对照相比均没有发生显著变化。进一步对转基因烟草的黄酮成分进行分析，发现烟草中的主要黄酮成分芦丁在转Smchi正义烟草中有很高的积累。 　　2．发根农杆菌介导法将Smchi基因导入新疆雪莲，得到转Smchi基因的新疆雪莲毛状根。实验发现，35S-chi转基因对毛状根的生长没有显著影响，但35S-chi转基因毛状根能够合成显著提高水平的芹菜素和总黄酮，其中根系C46经过35 d培养，能产生32.1 mg/L的芹菜素和647.8 mg/L的总黄酮，分别是对照根系的12倍和4倍;不同根系的Smchi基因表达水平、CHI酶活性和芹菜素含量成正相关。本研究为通过基因工程手段提高新疆雪莲毛状根芹菜素和总黄酮含量提供了一个有效方法。 　　3．在1/2MS附加GA1.5 mg/L的培养基上，新疆雪莲毛状根的不定芽再生频率高且不定芽生长健壮。再生苗在MS+BA1.0 mg/L+NAA0.1 mg/L的培养基上继代培养生长量较大，经过20 d的培养，35S-chi转基因新疆雪莲再生苗株系（C17、C27、C46）、对照再生苗（Control-1）和正常试管苗（Control-2）之间生长量差异不显著，增殖倍数都在7倍左右;实验还发现，毛状根再生苗比各自来源的毛状根的芹菜素和总黄酮含量下降了20-30%，但转基因再生苗的芹菜素和总黄酮含量比Control-1和Control-2都有显著提高，其中C46芹菜素和总黄酮含量分别为1.86 mg/g 干重和37.3 mg/g干重，分别是Control-1的12倍和 2.4 倍，Control-2的4 倍和1.6倍。这些结果表明由毛状根诱导出的再生苗可作为增强目标次生代谢产物生产的另外一个有效来源。 　　

Electronic structure and optical properties of GaN with Mn-doping

Calculations of the electronic structure and the density of states of GaN with Mn are carried out by means of first-principles plane-wave pesudopotential method based on density functional theory. The results reveal a 100% spin polarized impurity band in band structure of Ga1-xMnxN due to hybridization of Mn 3d and N 2p orbitals. The material is half metallic and suited for spin injectors. In addition, a peak of refractive index can be observed near the energy gap. The absorption coefficient increases in the UV region with the increase of the Mn content.

Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer

By replacing the flat (Ga1-xAlx)As barrier layer with a trapezoidal AlxGa1-xAs barrier layer, a conventional heterostructure can be operated in enhancement mode. The sheet density of two-dimensional electron gas (2DEG) in the structure can be tuned linearly from N-2D = 0.3 x 10(11) cm(-2) to N-2D = 4.3 x 10(11) cm(-2) by changing the bias on the top gate. The present scheme for gated heterostructures is easy to fabricate and does not require the use of self-alignment photolithography or the deposition of insulating layers. In addition, this scheme facilitates the initial electrical contact to 2DEG. Although, the highest electron mobility obtained for the moment is limited by the background doping level of heterostructures, the mobility should be improved substantially in the future. (C) 2009 Elsevier B.V. All rights reserved.

GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2ML/8ML InAs/GaSb SL active layer are fabricated with a pixel area of 800 x 800 mu m(2) without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05 mu m at 77K and 2.25 mu m at 300 K, the peak detectivities of the detectors are 4 x 10(9) cm.Hz(1/2)/W at 77K and 2 x 10(8) cm.Hz(1/2)/W at 300 K, respectively.

p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1-xInxN1-yAsy quaternary alloys. We show that the Mg-Ga substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (C) 2008 Published by Elsevier B.V.

Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well

We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/In-y Ga1-yAs)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.