Síntese de filmes finos a-C:H pela técnica de implantação e deposição por imersão em plasma

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Simulação numérica da fase líquida na deposição de filmes finos via sol-gel: aplicações para dióxido de estanho

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Filmes finos de LaNiO3 e PZT preparados pelo métodos das soluções precursoras poliméricas e depositados em substratos de silício

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação de filmes finos ferroelétricos de SrBi2'('TA IND.1-x''NB IND.x)ÍND.2 'O IND.9' puro e dopado com tungstênio, obtidos pelo método dos precursores poliméricos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização de filmes finos de 'BA''BI IND.2''TA IND.2''O IND.9(BBT)' e 'BA''BI IND.2''NB IND.2''O IND.9(BBN)'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Filmes finos híbridos orgânicos-inorgânicos para fotônica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Filmes finos ferroelétricos do tipo PBCT, PBST e PCST: estudo experimental e teórico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Obtenção e caracterização de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos

Pós-graduação em Engenharia Mecânica - FEG

Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Implantação iônica por imersão em plasma e deposição de filmes finos poliméricos provenientes da mistura hexametildisilazano/argônio

Thin polymeric films deposited by plasma are very atractive for many industrial and scientific applications, in areas such as electronics, mechanics, coatings, biomaterials, among others, due to its favorable properties such as good adhesion to the substrate, high crosslinking, nanomectric thickness, homogeneity, etc. In this work, thin films were deposited by plasma immersion ion implantation and deposition technique from a hexamethyldisilazane/argon mixture at different proportions. These films were subjected to several characterizations, such as, contact angle, which presented values near to 100 degrees, surface energy, with values near to 31 mJ/m2, hardness with values between 0.7 and 2.6 GPa, thickness from 100 to 200 nm, refractive index from 1.56 to 1.64, molecular structure presenting the following functional groups in the infrared spectra region: CHx from 2960 to 2900 cm-1; Si-H around 2130 cm-1; CH3 in Si-(CH3)x around 1410 cm-1; CH3 in Si-(CH3)x in 1260 cm-1; N-H around 1180 cm-1; CH2 in Si-CH2-Si bonds around 1025 cm-1; Si-O in Si-O-Si from 1020 to 1100 cm-1; Si-N in Si-H-Si bonds around 940 cm-1; CH3 in Si-(CH3)3 in 850 cm-1; Si-C bonds in Si-(CH3)2 around 800 cm-1; and Si-H in 680 cm-1 . From these characterizations, it was possible to conclude that the concentration of argon or hexamethyldisilazane in the mixture changed the resulting polymer

Preparação e caracterização de filmes finos ferroelétricos nanoestruturados do tipo Pb1-x(Ca,Ba)xTiO3

O rápido crescimento do mercado de dispositivos eletrônicos portáteis, com aplicações em diferentes áreas (telecomunicações, medicina, engenharia), criou uma grande demanda por fontes de potência compactas leves e, sobretudo, de baixo custo. Essa demanda levou ao desenvolvimento de tecnologia de filmes finos nanoestruturados para a obtenção de componentes eletroeletrônicos, por exemplo, memórias de computador. Estes dispositivos são empregados em “notebooks”, circuitos integrados, telefones celulares. O estudo de cristalização de filmes finos ferroelétricos nanoestruturados será feito através da cristalização induzida por rotas convencionais tal como cristalização em forno mufla. A modulação entre os diferentes cátions (Pb, Ca e Ba) para formar o sistema Pb1-x(Ca,Ba)xTiO3 serão analisadas, visando obter filmes com propriedades compatíveis para uso em memórias ferroelétricas. Para isso, os filmes finos serão depositados em substratos adequados controlando-se a homogeneidade química, a microestrutura e a interação filme-substrato

Síntese e caracterização dielétrica de filmes finos de Bi3NbO7 obtidos pelo método dos precursores poliméricos

Bi3NbO7 thin films were prepared by the polymeric precursor method. The precursor solutions were prepared with excess of bismuth ranging from 0% to 10% and the pH was controlled to be maintained between 8 and 9. This control was done by adding to the solution niobium and ethylene glycol. The final solution was clear and free of precipitation. After obtaining the precursor solution, has begun the process of characterization of powders with thermogravimetry (TG), differential thermal analysis and X-ray analysis (XRD). The films were obtained by the polymeric precursors, the method is advantageous because it is simple, and low cost involves steps and controlled stoichiometry. The films were annealed and characterized by XRD and SEM and also characterized according to their dialectics properties. We observed that the best results were obtained when the film is thermally at 800 ° C for two hours and 860 ° C for two hour. Under these conditions we obtain Bi3NbO7 thin films with good homogeneity, uniform distribution of the grains, but with the formation of secondary phase, which does not occur in treatments with lower temperature. The dielectric characterization showed that the produced film showed good characteristics with high dielectric constant and low loss

Desenvolvimento de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos em diferentes eletrodos óxidos

Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

Síntese e caracterização de filmes finos de ferrita de bismuto dopados com cálcio visando aplicação em memórias de múltiplos estados

The increasing demand for electro-electronic devices, with high performance and multi-functional and the rapid advances of the nanotechnology require the development of new methods and techniques for the production and characterization of nanostructure materials and phenomenological models to describe/to predict some of its properties. The demand for multifunctionality requires, at least, new materials, that can integrate ferroelectric and magnetic properties of high technological interest. Inside of this context, multiferroics material can be considered suitable to integrate two or more physical properties of high technological interest. It can also provides new challenges in the processes of synthesis of new materials, and development of new devices with controlling and simulation of its physical properties and modeling. For this Calcium (Ca)-doped bismuth ferrite (BiFeO3) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), polarization and piezoelectric measurements.In order to study the behavior and determine which are the most important parameters to achieve the optimal property to be applied to a multiferroic materials

Materiais híbridos de sílica/orgânico dopados com rodamina-B: estudo da luminescência e preparação de filmes finos para aplicações em fotônica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)