Plan uchastka kolfonda litera "I" Mikhaĭlovskogo raĭona Krivorogskogo okruga ploshchadiʻ︠u︡ 458 desi︠a︡tin

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Plan uchastka kolfonda litera "Z" Mikhaĭlovskogo raĭona Krivorogskogo okruga ploshchadiʻ︠u︡ 848 desi︠a︡tin

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Plan zemelʻnogo otvoda kolfonda "Tagancha" Krivorogskogo okruga Sofievskogo raĭona ploshchadiʻ︠u︡ 4983 desi︠a︡tin

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Plan zemelʻnogo otvoda uchastka litera "K" kollektivov "Kalininovka" i "Novai︠a︡ Zhiznʻ" Krivorogskogo okruga Sofievskogo raĭona ploshchadiʻ︠u︡ 569 desi︠a︡tin

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Plan uchastka kolfonda litera "B" Krivorogskogo okruga Mikhaĭlovskogo raĭona ploshchadiʻ︠u︡ 495 desi︠a︡tin

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Plan uchastka kolonizat︠s︡ionnogo fonda pod literami "A" i "B" Krivorogskogo okruga Mikhaĭlovskogo raĭona ploshchadiʻ︠u︡ 1356 desi︠a︡tin

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Plan uchastka kolonizat︠s︡ionnogo fonda poselok "Chervonnyĭ" ( Ėrbardaĭter), Dnepro-Petrovskogo okruga, Sinelʻnikovskogo raĭona, ploshchadiʻ︠u︡ 793 desi︠a︡tin

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Plan uchastka kolfondalitera "D" Krivorogskogo okruga Mikhaĭlovskogo raĭona ploshchchadiʻ︠u︡ 874 desi︠a︡tin

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Plan zemelʻnogo otvoda kolfonda "Niva" Krivorogskogo okruga Sofievskogo raĭona ploshchadiʻ︠u︡ 861 desi︠a︡tin

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Plan zemelʻnogo otvoda kolfonda "Novai︠a︡ Zhiznʻ" Krivorogskogo okruga, Mikhaĭlovskogo raĭona ploshchadiʻ︠u︡ 303 desi︠a︡tin

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Plan zemelʻnogo otvoda kollektiva "Novyĭ Putʻ" Krivorogskogo okruga Mikhaĭlovskogo raĭona ploshchadiʻ︠u︡ 717 desi︠a︡tin

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Plan uchastka gosfonda kollektiva "Trud" Krivorogskogo okruga i raĭona ploshchadiʻ︠u︡ 107 desi︠a︡tin

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Plan zemelʻnogo otvoda s.-kh. arteli "Krasnyĭ Pakharʻ" Krivorogskogo okruga, Sofievskogo raĭona ploshchadiʻ︠u︡ 1380 desi︠a︡tin

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Some properties of indium-tin oxide-films

Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.

Catalytic vapor-phase oxidation of p-xylene over tin vanadate

Rates of oxidation of p-xylene were measured in the temperature range 320 to 420 °C using tin vanadate as catalyst in an isothermal differential flow reactor. The amounts of p-xylene converted were determined by analyzing the main products (p-tolualdehyde, maleic anhydride, p-toluic acid and traces of terephthalic acid). Negligible amounts of products of complete combustion were formed. The reaction rates obtained for p-xylene followed the relation, Image based on the redox model. The mechanism of the reaction was determined by conducting different sets of experiments and it was found that the reaction followed the parallel-consecutive mechanism, in which p-tolualdehyde and maleic anhydride were formed from the parallel route whereas p-toluic acid was formed from the consecutive route.