Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be similar to 2.48 eV: The current-voltage (I-V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log-log plot of the I-V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film. (C) 2014 Elsevier Ltd. All rights reserved.

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 x 10(9)/cm(2) and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600-1900 cm(2)/V s at a carrier concentration of 0.7-0.9 x 10(13)/cm(2). Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner. (C) 2015 AIP Publishing LLC.

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.

Dynamic SIF of interface crack between two dissimilar viscoelastic bodies under impact loading

In this paper, the transient dynamic stress intensity factor (SIF) is determined for an interface crack between two dissimilar half-infinite isotropic viscoelastic bodies under impact loading. An anti-plane step loading is assumed to act suddenly on the surface of interface crack of finite length. The stress field incurred near the crack tip is analyzed. The integral transformation method and singular integral equation approach are used to get the solution. By virtue of the integral transformation method, the viscoelastic mixed boundary problem is reduced to a set of dual integral equations of crack open displacement function in the transformation domain. The dual integral equations can be further transformed into the first kind of Cauchy-type singular integral equation (SIE) by introduction of crack dislocation density function. A piecewise continuous function approach is adopted to get the numerical solution of SIE. Finally, numerical inverse integral transformation is performed and the dynamic SIF in transformation domain is recovered to that in time domain. The dynamic SIF during a small time-interval is evaluated, and the effects of the viscoelastic material parameters on dynamic SIF are analyzed.

The scattering of general SH plane wave by interface crack between two dissimilar viscoelastic bodies

The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.

A New Deformation Theory with Strain Gradient Effects

A new phenomenological deformation theory with strain gradient effects is proposed. This theory, which belongs to nonlinear elasticity, fits within the framework of general couple stress theory and involves a single material length scale l. In the present theory three rotational degrees of freedom omega(i) are introduced in addition to the conventional three translational degrees of freedom u(i). omega(i) has no direct dependence upon ui and is called the micro-rotation, i.e. the material rotation theta(i) plus the particle relative rotation. The strain energy density is assumed to only be a function of the strain tensor and the overall curvature tensor, which results in symmetric Cauchy stresses. Minimum potential principle is developed for the strain gradient deformation theory version. In the limit of vanishing 1, it reduces to the conventional counterparts: J(2) deformation theory. Equilibrium equations, constitutive relations and boundary conditions are given in details. Comparisons between the present theory and the theory proposed by Shizawa and Zbib (Shizawa, K., Zbib, H.M., 1999. A thermodynamical theory gradient elastoplasticity with dislocation density Censor: fundamentals. Int. J. Plast. 15, 899) are given. With the same hardening law as Fleck et al. (Fleck, N.A., Muller, G.H., Ashby, M.F., Hutchinson, JW., 1994 Strain gradient plasticity: theory and experiment. Acta Metall. Mater 42, 475), the new strain gradient deformation theory is used to investigate two typical examples, i.e. thin metallic wire torsion and ultra-thin metallic beam bend. The results are compared with those given by Fleck et al, 1994 and Stolken and Evans (Stolken, J.S., Evans, A.G., 1998. A microbend test method for measuring the plasticity length scale. Acta Mater. 46, 5109). In addition, it is explained for a unit cell that the overall curvature tensor produced by the overall rotation vector is the work conjugate of the overall couple stress tensor. (C) 2002 Elsevier Science Ltd. All rights reserved.

Deformation behavior and microstructure effect in 2124Al/SiCp composite

Dynamic compression tests were performed by means of a Split Hopkinson Pressure Bar (SHPB). Test materials were 2124Al alloys reinforced with 17% volume fraction of 3, 13 and 37 μm SiC particles, respectively. Under strain rate ε = 2100 l/s, SiC particles have a strong effect on σ_0.2 of the composites and the σ_0.2 increases with different SiC particle size in the following order: 2124Al-alloy → 124Al/SiC_p (37 μm) → 2124Al/SiC_p (13 μm) → 2124Al/SiC_p (3 μm), and the strain hardening of the composites depends mainly on the strain hardening of matrix, 2124A1 alloy. The results of dimensional analysis present that the flow stress of these composites not only depends on the property of reinforcement and matrix but also relates to the microstructure scale, matrix grain size, reinforcement size, the distance between reinforcements and dislocations in matrix. The normalized flow stress here is a function of inverse power of the edge-edge particle spacing, dislocation density and matrix grain size. Close-up observation shows that, in the composite containing SiC particles (3 μm), localized deformation formed readily comparing with other materials under the same loading condition. Microscopic observations indicate that different plastic flow patterns occur within the matrix due to the presence of hard particles with different sizes.

Dynamic recrystallization induced by plastic deformation at high strain rate in a Monel alloy

An investigation has been made into the plastic deformation behavior of a Monel alloy deformed at high strain rate of 10(5) s(-1) by split Hopkinson bar. The results reveal that there are some equiaxed grains with an average size of 150 nm in diameter in the center of the shear bands, suggesting that this microstructure characteristics be developed by dynamic recrystallization, arising from the deformation and the rapid temperature rise in the band. Analysis shows that the plastic strain rate and the mobile dislocation density play a key role in the new crystallized grain formation and growth. Based on grain boundary energy change and diffusion mechanism, the grain growth kinetics is developed for plastic deformation at a high strain rate.

Evolution of thermoplastic shear localization and related microstructures in Awl/SiCp composites under dynamic compression

The localized shear deformation in the 2024 and 2124 Al matrix composites reinforced with SiC particles was investigated with a split Hopkinson pressure bar (SHPB) at a strain rate of about 2.0x10(3) s(-1). The results showed that the occurrence of localized shear deformation is sensitive to the size of SiC particles. It was found that the critical strain, at which the shear localization occurs, strongly depends on the size and volume fraction of SiC particles. The smaller the particle size, the lower the critical strain required for the shear localization. TEM examinations revealed that Al/SiCp interfaces are the main sources of dislocations. The dislocation density near the interface was found to be high and it decreases with the distance from the particles. The Al matrix in shear bands was highly deformed and severely elongated at low angle boundaries. The Al/SiCp interfaces, particularly the sharp corners of SiC particles, provide the sites for microcrack initiation. Eventual fracture is caused by the growth and coalescence of microcracks along the shear bands. It is proposed that the distortion free equiaxed grains with low dislocation density observed in the center of shear band result from recrystallization during dynamic deformation.

Torsional impact response of a penny-shaped interface crack in bonded materials with a graded material interlayer

In this paper, the dynamic response of a penny-shaped interface crack in bonded dissimilar homogeneous half-spaces is studied. It is assumed that the two materials are bonded together with such a inhomogeneous interlayer that makes the elastic modulus in the direction perpendicular to the crack surface is continuous throughout the space. The crack surfaces art assumed to be subjected to torsional impact loading. Laplace and Hankel integral transforms are applied combining with a dislocation density,function to reduce the mixed boundary value problem into a singular integral equation with a generalized Cauchy kernel in Laplace domain. By solving the singular integral equation numerically, and using a numerical Laplace inversion technique, the dynamic stress intensity factors art obtained. The influences of material properties and interlayer thickness on the dynamic stress intensity factor are investigated.

Kinking of an interface crack between 2 dissimilar anisotropic elastic solids

A detailed analysis of kinking of an interface crack between two dissimilar anisotropic elastic solids is presented in this paper. The branched crack is considered as a distributed dislocation. A set of the singular integral equations for the distribution function of the dislocation density is developed. Explicit formulas of the stress intensity factors and the energy release rates for the branched crack are given for orthotropic bimaterials and misoriented orthotropic bicrystals. The role of the stress parallel to the interface, sigma0 is taken into account in these formulas. The interface crack can advance either by continued extension along the interface or by kinking out of the interface into one of the adjoining materials. This competition depends on the ratio of the energy release rates for interface cracking and for kinking out of the interface and the ratio of interface toughness to substrate toughness. Throughout the paper, the influences of the inplane stress sigma0 on the stress intensity factors and the energy release rates for the branched crack, which can significantly alter the conditions for interface cracking, are emphasized.

Preliminary-results of gaas single-crystal growth under high gravity conditions

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

粘弹性材料界面裂纹的瞬态响应和散射研究

本文研究粘弹性材料界面裂纹对冲击载荷的瞬态响应和对广义平面波的稳态散射。相对于已有广泛研究的弹性材料裂纹瞬态响应和稳态散射问题，本文的研究有三个突出特点：1）粘弹性材料；2）界面裂纹；3）广义平面波入射。粘弹性材料界面裂纹对冲击载荷的瞬态响应和对广义平面波的散射尚无开展研究，本文在弹性材料相应问题的研究基础上，首先开展了这一问题的研究。对于冲击载荷下粘弹性界面裂纹的瞬态响应问题，利用Laplace积分变换方法，将粘弹性材料卷积型本构方程转化为Laplace变换域内的代数型本构方程，从而可以在Laplace变换域内象处理弹性材料的冲击响应一样，将相应的混合边值问题归结为关于裂纹张开位移COD的对偶积分方程，并进一步引入裂纹位错密度函数CDD （Crack Dislocation Density），将对偶积分方程化成关于CDD的奇异积分方程（SIE）。用数值方法求解奇异积分方程得到变换域内的动应力强度因子数值解，最后利用Laplace积分逆变换数值方法得到时间域内的动应力强度因子的时间响应。理论分析考虑了两种裂纹模型，即Griffith界面裂纹和柱面圆弧型界面裂纹。考虑的载荷包括反平面冲击载荷和平面冲击载荷。对于平面冲击载荷，通过对裂尖应力场的奇性分析，首次发现粘弹性界面裂纹裂尖动应力场奇性指数不是常数0.5，而是与震荡指数一样依赖材料参数。针对反平面冲击载荷给出了一个算例，计算了裂尖动应力强度因子的时间响应，并与弹性材料的结果作了比较，发现粘弹性效应的影响不仅使过冲击峰值降低，而且使峰值点后移。粘性效应较大时，过冲击现象甚至不出现。关于粘弹性界面裂纹对广东省义平面波的散射问题，首先研究广义平面波在无裂纹存在的理想界面的反射和透射，再研究由于界面裂纹的存在而产生的附加散射场。利用粘弹性材料的复模量理论，可将粘弹性材料的卷积型相构方程化成频率域内的代数型本构方程。类似弹性平面波的处理，在频率域内将问题最终归结为关于裂纹位错密度CDD的奇异积分方程。数值方法求解奇异积分方程即可得到频率域内的散射场，并进而得到裂尖动应力强度因子和远场位移型函数和散射截面。理论分析考虑了两种裂纹模型：Griffith界面裂纹和柱面圆弧型界面裂纹。研究的入射波有广义的SH波和P波。对于广义平面P波入射的情况，通过对裂尖应力场的奇性分析，同样发现粘弹性界面裂纹裂尖动应力场奇性指数不地常数0.5，而是与震荡指数一样依赖于材料参数。对柱面裂纹散射远场的渐近分析，发现远场位移和应力除含有几何衰减因子外，都含有一个材料衰减速因子。散射截面由于材料衰减因子的存在也成为依赖散射半径的量。为了使散射截面仍有意义，文中提出一种修正办法。对Griffith界面裂纹，给出了一个广义平面SH波入射的算例；对柱面界面裂纹，给出了一个广义平面P波入射的算例。计算了不同入射角和入射频率下裂纹的张开位移和动就应力强度因子，并分析了其依赖关系。求解奇异积分方程的数值方法和Laplace积分逆变换数值方法是本文的基本数值方法。本文对这两种方法作了大量的调研和系统的研究。在对比分析的基础上，对现有的各种方法从原理，适用范围，计数效率，优势及特点进行了归纳总结。并尝试了奇异积分方程的最新数值方法--分片连续函数法，证实了其适用性和方便性．