Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Porous InP array-directed assembly of InAs nanostructure

Fascinating features of porous InP array-directed assembly of InAs nanostructures are presented. Strained InAs nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous InP substrate. Identical porous substrate with different pore depths defines different growth modes. Shallow pores direct the formation of closely spaced InAs dots at the bottom. Deep pores lead to progressive covering of the internal surface of pores by epitaxial material followed by pore mouth shrinking. For any depth an obvious dot depletion feature occurs on top of the pore framework. This growth method presages a pathway to engineer quantum-dot molecules and other nanoelements for fancy physical phenomena. (c) 2006 American Institute of Physics.

Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10(-5) Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10(-6) or 2.5x10(-6) Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.

Magnetic resonant cavity composing of a three layered plasmonic nanostructure

The magnetic-type plasmon resonant of a metal-dielectric-metal nanocavity working at the wavelength of 1.55 mu m is explored, in which the upper layer is periodically patterned with metallic nanostrip arrays. In the dielectric film layer, the magnetic energy intensity is enhanced about 1700 times when irradiated with a p-polarized plane wave. We numerically studied the dispersion of the modes and the Q-value of this periodic cavity arrays. Q value is estimated about 18 and still has room for further improvement. It provides a new type of nanocavity that exhibits a strong magnetic response.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Synthesis and characterization of magnetite dodecahedron nanostructure by hydrothermal method

Magnetite dodecahedral nanocrystals were fabricated using ethlenediamine tetraacetic acid (EDTA)-mediated hydrothermal route. Scanning electron microscopy images displayed that the products were almost dodecahedrons. The length of two different ribs were about 300 and 200 nm, respectively. X-ray diffraction patterns showed that the products were the cubic inverse spinel structure. Fourier transform infrared spectrum directly provided evidence of the EDTA bound to a specific surface of the precipitated magnetic nanocrystal.

Synthesis, characterization and assembly of BiOCl nanostructure and their photocatalytic properties

In this article, a two-dimensional (2D) nanoplate and a 3D hierarchical structure of BiOCl were synthesized through a simple sonochemical route. Compared with previous preparation methods, the 2D nanoplates can be prepared at a relatively short time (about 30 min) with low energy used. Additionally, these 2D nanoplates can easily assemble into a 3D hierarchical structure with the surfactant reagents. The obtained products were well crystallized and subsequently characterized by a range of methods, such as X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission microscopy (HRTEM), selected area electron diffraction (SAED) and Raman spectroscopy.

Large-Scale and Template-Free Growth of Free-Standing Single-Crystalline Dendritic Ag/Pd Alloy Nanostructure Arrays

Large-scale arrays consist of dendritic single-crystalline Ag/Pd alloy nanostructures are synthesized for the first time. A simple galvanic replacement reaction is introduced to grow these arrays directly on Ag substrates. The morphology of the products strongly depended on the reaction temperature and the concentration of H2PdCl4 solution. The mechanism of the formation of alloy and the dendritic morphology has been discussed. These alloy arrays exhibit high surface-enhanced Raman scattering (SERS) activity and may have potential applications in investigation of "in situ" Pd catalytic reactions using SERS. Moreover, electrocatalytic measurements suggest that the obtained dendritic Ag/Pd alloy nanostructures exhibit electrocatytic activity toward the oxidation of formic acid.

Nanocomposite based on depositing platinum nanostructure onto carbon nanotubes through a one-pot, facile synthesis method for amperometric sensing

Platinum nanoparticles (Pt NPs) were deposited onto multi-walled carbon nanotubes (MWNTs) through direct chemical reduction without any other stabilizing agents. Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry were employed to characterize the morphology of the as-prepared nanocomposite (noted as Pt NPs-MWNTs) and further identify the Pt NPs on the surface of MWNTs. The nanocomposite demonstrated the ability to electrocatalyze the oxidation of hydrogen peroxide and substantially raises the response current. A sensitivity of 591.33 mu A mM(-1) cm(-2) was obtained at Pt NPs-MWNTs modified electrode. Thus, we immobilized glucose oxidase (GOD) as a model enzyme on the nanocomposite-based electrode with a thin layer of Nafion to fabricate a glucose biosensor, which showed sensitive and fast response to glucose. The influence of the GOD loading was investigated and the biosensor with an enzyme loading concentration of 10 mg/mL shows optimal performance for glucose detection, that is, a detection limit of 3 mu M and a response time of 3 s, respectively.

Electrochemical preparation of silver nanostructure on the planar surface for application in metal-enhanced fluorescence

We introduce a fast and simple method, named the potentiostatic electrodeposition technique, to deposit metal particles on the planar surface for application in metal-enhanced fluorescence. The as-prepared metallic surfaces were comprised of silver nanostructures and displayed a relatively homogeneous morphology. Atomic force microscopy and UV-visible absorption spectroscopy were used to characterize the growth process of the silver nanostructures on the indium tin oxide (ITO) surfaces. A typical 20-fold enhancement in the intensity of a nearby fluorophore, [Ru(bpy)(3)](2+), could be achieved on the silvered surfaces. In addition, the photostability of [Ru(bpy)(3)](2+) was found to be greatly increased due to the modification of the radiative decay rate of the fluorophore. It is expected that this electrochemical approach to fabricating nanostructured metallic surfaces can be further utilized in enhanced fluorescence-based applications.