Synthesis and characterization of 3d-transition metals doped ZnO thin films and nanostructures for possible spintronic applications

The objective of the present study is the formation of single phase Zn1−xTMxO thin films by PLD and increase the solubility limit of TM dopants. The TM doped ZnO nanostructures were also grown by hydrothermal method. The structural and morphological variation of ZnO:TM thin films and nanostructures with TM doping concentration is also investigated. The origin and enhancement of ferromagnetism in single phase Zn1−xTMxO thin films and nanostructures using spectroscopic techniques were also studied. The dependence of ablation parameters on the structural and optical properties of ZnO thin films were studied

Preparation and characterization of Cd(2)Nb(2)O(7) thin films on Si substrates

Thin Cd(2)Nb(2)O(7) films were grown on single-crystal p-type SiO(2)/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO(2)/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance-voltage (C-V) measurements. (c) 2008 Elsevier Ltd. All rights reserved.

Langmuir and Langmuir-Blodgett films containing a porphyrin-ruthenium complex

The fabrication of supramolecular structures from the tetraruthenated porphyrin-containing phosphines, {TPyP[RuCl3(dppb)](4)}, RuTPyP, is demonstrated with Langmuir and Langmuir-Blodgett films. The surface pressure-molecular area isotherms (pi-A) point to an edge-on arrangement for the RuTPyP molecules in the condensed state. Weak aggregation in the Langmuir films was indicated by non-zero surface potentials at large areas per molecule and a slight red shift in the ultraviolet-visible absorption spectrum in comparison to the spectrum in solution. Further aggregation occurs in the Z-type Lang muir-Blodgett films, which was confirmed with ultraviolet-visible spectroscopy of the deposited films. Fourier transform infrared and Raman spectroscopic data for powder and Langmuir-Blodgett films indicate that the RuTPyP molecules are chemically stable in Langmuir-Blodgett films regardless of the contact with water during film fabrication. The nanostructured nature of the Langmuir-Blodgett films was manifested in cyclic voltammetry due to the high sensitivity of the metallic centers in RuTPyR Electrodes modified with Langmuir-Blodgett films exhibit an anodic peak at 100 mV and a cathodic peak at 7 mV, which is assigned to RuIII/RuII redox processes. Furthermore, Langmuir-Blodgett films from RuTPyP showed electrocatalytic activity for oxidation of benzyl alcohol, illustrated by a large shift of 100 mV in the anodic peak at 400 mV, while electropolymerized and cast films of the same compound displayed smaller and no activities, respectively.

Taking Advantage of Electrostatic Interactions To Grow Langmuir-Blodgett Films Containing Multilayers of the Phospholipid Dipalmitoylphosphatidylglycerol

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Incorporation of Ag nanoparticles into membrane mimetic systems composed by phospholipid layer-by-layer (LbL) films to achieve surface-enhanced Raman scattering as a tool in drug interaction studies

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Layer-by-Layer Technique as a New Approach to Produce Nanostructured Films Containing Phospholipids as Transducers in Sensing Applications

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparation of films from aluminum acetylacetonate by plasma sputtering

Aluminum acetylacetonate has been reported as a precursor for the deposition of alumina films using different approaches. In this work, alumina-containing films were prepared by plasma sputtering this compound, spread directly on the powered lowermost electrode of a reactor, while grounding the substrates mounted on the topmost electrode. Radiofrequency power (13.56 MHz) was used to excite the plasma from argon atmosphere at a working pressure of 11 Pa. The effect of the plasma excitation power on the properties of the resulting films was studied. Film thickness and hardness were measured by profilometry and nanoindentation, respectively. The molecular structure and chemical composition of the layers were analyzed by Fourier transform infrared spectroscopy and energy dispersive spectroscopy. Surface micrographs, obtained by scanning electron microscopy, allowed the determination of the sample morphology. Grazing incidence X-ray diffraction was employed to determine the structure of the films. Amorphous organic layers were deposited with thicknesses of up to 7 μm and hardness of around 1.0 GPa. The films were composed by aluminum, carbon, oxygen and hydrogen, their proportions being strongly dependent on the power used to excite the plasma. A uniform surface was obtained for low-power depositions, but particulates and cracks appeared in the high-power prepared materials. The presence of different proportions of aluminum oxide in the coatings is ascribed to the different activations promoted in the metalorganic molecule once in the plasma phase. Copyright © 2013 John Wiley & Sons, Ltd. Copyright © 2013 John Wiley & Sons, Ltd.

Effect of argon ion bombardment on amorphous silicon carbonitride films

Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character.

TiO2/CuO films obtained by citrate precursor method for photocatalytic application

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Natural latex films as carrier for casearia sylvestris swartz extract associated with ciprofloxacin

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Grain size effect on the structural and dielectric properties of Pb0.85La0.15TiO3 ferroelectric ceramic compound

This paper presents a study of the influence of particle size on the structural and dielectric properties of Pb0.85La0.15TiO3 (PLT15) ferroelectric ceramic samples. The samples were prepared with average grain size of 1.69 +/- 0.08 mu m and 146 +/- 8 nm using, respectively, conventional and spark plasma sintering techniques. A decrease in the tetragonality degree as the crystallite size decreased was explained by an internal stress caused by the existence of a large amount of grain boundaries. The local structure exhibited no significant modification and the dielectric measurements showed a diffuse phase transition and a reduction in the permittivity magnitude at T-m as the average grain size decreased. The nanostructured ceramic sample prepared at a relatively lower temperature and sintering time presented a dielectric constant value of approximately 2000 at room temperature. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Molecular organization and doping in poly(2-methoxyaniline)/Ni(dmit)(2) films obtained with the Langmuir-Blodgett technique

The control of the properties of materials at the molecular level is pursued for many applications, especially those associated with nanostructures. In this paper, we show that the coordination compound [Ni(dmit)(2)], where (dmit) is the 1,3-dithiole-2-thione-4,5-dithiolate ligand, can induce doping of poly(2-methoxyaniline) (POMA) in molecularly ordered Langmuir and Langmuir-Blodgett (LB) films. Doping was associated with interactions between the components and the compression of the Langmuir film at the air-water interface, according to polarization-modulated infrared reflection-absorption spectroscopy (PM-IRRAS) data. Taking these results together with in situ UV-Vis absorption measurements, we could identify the molecular groups involved in the interaction, including the way they were reoriented upon film compression. The Langmuir films were sufficiently stable to be transferred as Y-type LB films, while the hybrid POMA/[Ni(dmit)(2)] films remain doped in the solid state. As expected, the molecular charges affected the film morphology, as observed from combined atomic and electric force microscopy measurements. In summary, with adequate spectroscopy and microscopy tools we characterized molecular-level interactions, which may allow one to design molecular electronic devices with controlled electrical properties.

Reactive sputter magnetron reactor for preparation of thin films and simultaneous in-situ structural study by X-ray diffraction.

Reactive Sputter Magnetron (RSM) is a widely used technique to thin films growing of compounds both, in research laboratories and in industrial processes. The nature of the deposited compound will depend then on the nature of the magnetron target and the nature of the ions generated in the plasma. One important aspect of the problem is the knowledge of the evolution of the film during the process of growing itself. In this work, we present the design, construction of a chamber to be installed in the Huber goniometer in the XRD2 line of LNLS in Campinas, which allows in situ growing kinetic studies of thin films.

Spin polarized transport in manganese oxide double-perovskite thin films

Gegenstand dieser Arbeit war die Untersuchung von metallischen gemischtvalenten Manganaten und magnetischen Doppelperowskiten. Aufgrund ihres großen negativen Magnetowiderstandes (MW) sind diese halbmetallischen Oxide interessant für mögliche technische Anwendungen, z.B. als Leseköpfe in Festplatten. Es wurden die kristallographischen, elektronischen und magnetischen Eigenschaften von epitaktischen Dünnschichten und polykristallinen Pulverproben bestimmt.Epitaktische Dünnschichten der Verbindungen La_0.67Ca_0.33MnO₃ und La_0.67Sr_0.33MnO₃ wurdenmit Kaltkathodenzerstäubung und Laserablation auf einkristallinen Substraten wie SrTiO₃abgeschieden. Mit Hall-Effekt Messungen wurde ein Zusammenbruch der Ladungsträgerdichte bei der Curie-Temperatur T_C beobachtet.Mit dem Wechsel des Dotierungsatoms A von Ca (T_C=232 K) zu Sr (T_C=345 K)in La_0.67A_0.33MnO₃ konnte die Feldsensitivität des Widerstandes bei Raumtemperatur gesteigert werden. Um die Sensitivität weiter zu erhöhen wurde die hohe Spinpolarisation von nahezu 100% in Tunnelexperimenten ausgenutzt. Dazu wurden biepitaktische La_0.67Ca_0.33MnO₃ Schichten auf SrTiO₃ Bikristallsubstraten hergestellt. Die Abhängigkeit des Tunnelmagnetowiderstandes (TMW) vom magnetischen Feld, Temperatur und Strum war ein Schwerpunkt der Untersuchung. Mittels spinpolarisierten Tunnelns durch die künstliche Korngrenze konnte ein hysteretischer TMW von 70% bei 4 K in kleinen Magnetfeldern von 120 Oe gemessen werden. Eine weitere magnetische Oxidverbindung, der Doppelperowskit Sr₂FeMoO₆ miteine Curie-Temperatur oberhalb 400 K und einem großen MW wurde mittels Laserablation hergestellt. Die Proben zeigten erstmals das Sättigunsmoment, welches von einer idealen ferrimagnetischen Anordnung der Fe und Mo Ionen erwartet wird. Mit Hilfe von Magnetotransportmessungen und Röntgendiffraktometrie konnte eine Abhängigkeit zwischen Kristallstruktur (Ordnung oder Unordnung im Fe, Mo Untergitter) und elektronischem Transport (metallisch oder halbleitend) aufgedeckt werden.Eine zweiter Doppelperowskit Ca₂FeReO₆ wurde im Detail als Pulverprobe untersucht. Diese Verbindung besitzt die höchste Curie-Temperatur von 540 K, die bis jetzt in magnetischen Perowskiten gefunden wurde. Mit Neutronenstreuung wurde eine verzerrte monoklinische Struktur und eine Phasenseparation aufgedeckt.

Magnetic tunneling junctions with the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al

Materialen mit sehr hoher Spinpolarisation werden für Anwendungen im Bereich der Spin-Elektronik benötigt. Deshalb werden große Forschungsanstrengungen zur Untersuchung der Eigenschaften von Verbindungen mit potentiell halbmetallischem Charakter, d. h.mit 100% Spinpolarisation, unternommen. In halbmetallischen Verbindungen, erwartet man eine Lücke in der Zustandsdichte an der Fermi Energie für Ladungsträger einer Spinrichtung, wahrend die Ladungsträger mit der anderen Spinrichtung sich metallisch verhalten. Eine Konsequenz davon ist, dass ein Strom, der durch solche Verbindung fließt, voll spinpolarisiert ist. Die hohe Curie-Temperatur Tc (800 K) und der theoretisch vorhergesagte halbmetallische Charakter machen Co2Cr0.6Fe0.4Al (CCFA) zu einem guten Kandidaten für Spintronik-Anwendungen wie magnetische Tunnelkontakte (MTJs = Magnetic Tunneling Junctions). In dieser Arbeit werden die Ergebnisse der Untersuchung der elektronischen und strukturellen Eigenschaften von dünnen CCFA Schichten dargestellt. Diese Schichten wurden in MTJs integriert und der Tunnel-Magnetowiderstands-Effekt untersucht. Hauptziele waren die Messung der Spinpolarisation und Untersuchungen der elektronischen Struktur von CCFA. Der Einfluss verschiedener Depositionsparameter auf die Eigenschaften der Schichten, speziell auf der Oberflächenordnung und damit letztlich auf den Tunnel-Magnetowiderstand (TMR), wurde bestimmt. Epitaktische d¨unne CCFA Schichten mit zwei verschiedenen Wachstumsrichtungen wurden auf verschiedene Substrate und Pufferschichten deponiert. Ein Temperverfahren wurde eingesetzt um die strukturelle Eigenschaften der dünnen Schichten zu verbessern. Für die MTJs wurde Al2O3 als Barrierenmaterial verwendet und Co als Gegenelektrode gewählt. Die Mehrschicht-Systeme wurden in Mesa-Geometrie mit lithographischen Methoden strukturiert. Eine maximal Jullière Spinpolarisation von 54% wurde an Tunnelkontakte mit epitaktischen CCFA Schichten gemessen. Ein starker Einfluss der Tempernbedingungen auf dem TMR wurde festgestellt. Eine Erhörung des TMR wurde mit einer Verbesserung der Oberflächenordung der CCFA Schichten korreliert. Spektroskopische Messungen wurden an den MTJs durchgeführt. Diesen Messungen liefern Hinweise auf inelastische Elektron-Magnon und Elektron-Phonon Stossprozesse an den Grenzflächen. Einige der beobachteten Strukturen konnten mit der berechneten elektronischen Struktur von CCFA korreliert worden.