Structure, chemistry, and energetics of organic and inorganic adsorbates on Ga-rich GaAs and GaP(001) surfaces

The work described in this dissertation includes fundamental investigations into three surface processes, namely inorganic film growth, water-induced oxidation, and organic functionalization/passivation, on the GaP and GaAs(001) surfaces. The techniques used to carry out this work include scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. Atomic structure, electronic structure, reaction mechanisms, and energetics related to these surface processes are discussed at atomic or molecular levels.

First, we investigate epitaxial Zn₃P₂ films grown on the Ga-rich GaAs(001)(6×6) surface. The film growth mechanism, electronic properties, and atomic structure of the Zn₃P₂/GaAs(001) system are discussed based on experimental and theoretical observations. We discover that a P-rich amorphous layer covers the crystalline Zn3P2 film during and after growth. We also propose more accurate picture of the GaP interfacial layer between Zn₃P₂ and GaAs, based on the atomic structure, chemical bonding, band diagram, and P-replacement energetics, than was previously anticipated.

Second, DFT calculations are carried out in order to understand water-induced oxidation mechanisms on the Ga-rich GaP(001)(2×4) surface. Structural and energetic information of every step in the gaseous water-induced GaP oxidation reactions are elucidated at the atomic level in great detail. We explore all reasonable ground states involved in most of the possible adsorption and decomposition pathways. We also investigate structures and energies of the transition states in the first hydrogen dissociation of a water molecule on the (2×4) surface.

Finally, adsorption structures and thermal decomposition reactions of 1-propanethiol on the Ga-rich GaP(001)(2×4) surface are investigated using high resolution STM, XPS, and DFT simulations. We elucidate adsorption locations and their associated atomic structures of a single 1-propanethiol molecule on the (2×4) surface as a function of annealing temperature. DFT calculations are carried out to optimize ground state structures and search transition states. XPS is used to investigate variations of the chemical bonding nature and coverage of the adsorbate species.

First-principles study of UC2 and U2C3

The electronic structure and mechanical properties Of UC2 and U2C3 have been systematically investigated using first-principles calculations by the projector-augmented-wave (PAW) method. Furthermore, in order to describe precisely the strong on-site Coulomb repulsion among the localized U 5f electrons, we adopt the generalized gradient approximation +U formalisms for the exchange-correlation term. We show that our calculated structural parameters and electronic properties for UC2 and U2C3 are in good agreement with the experimental data by choosing an appropriate Hubbard U = 3 eV. As for the chemical bonding nature, the contour plot of charge density and total density of states suggest that UC2 and U2C3 are metallic mainly contributed by the 5f electrons, mixed with significant covalent component resulted from the strong C-C bonds. The present results also illustrate that the metal-carbon (U-C) bonding and the carbon-carbon covalent bonding in U2C3 are somewhat weaker than those in UC2, leading to the weaker thermodynamic stability at high temperature as observed by experiments.

Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films

Undoped and Al-, Ga-, and In-doped Bi4Ti3O12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer, respectively. The optical band-gap energies, Urbach energies, and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model, the dispersion parameters such as the average oscillator energy (E-0) and dispersion energy (E-d) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al, Ga, and In, which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity (beta) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. (c) 2009 American Institute of Physics. [DOI 10.1063/1.3138813]

Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma

This paper reports on the preparation and characterization of hydrogenated amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma. Carbon-rich a-SiC:H film with band gap of up to 3.3 eV has been achieved. IR and UV Vis spectra were employed to characterize the chemical bonding and optical properties of as-prepared films. It is shown that hydrogen dilution is crucial in obtaining these wide band gap carbon-rich films. Raman and PL measurements were performed to probe the microstructure and photoelectronic properties of these films before and after annealing. Films with intermediate carbon concentration seem more defective and exhibit stronger photoluminescence and subband absorption than others. Films with different compositions exhibit different annealing behaviours. For silicon rich and carbon rich films, high temperature annealing results in the formation of silicon crystallites and graphite clusters, respectively. (C) 2003 Elsevier B.V. All rights reserved.

Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films

Bi4Ti3O12 (BTO) and Bi3.25In0.75Ti3O12 (BTO:In) thin films were prepared on fused quartz and LaNiO3/Si (LNO) substrates by chemical solution deposition (CSD). Their microstructures, ferroelectric and optical properties were investigated by X-ray diffraction, scanning electron microscope, ferroelectric tester and UV-visible-NIR spectrophotometer, respectively. The optical band-gaps of the films were found to be 3.64 and 3.45 eV for the BTO and BTO:In films, respectively. Optical constants (refractive indexes and extinction coefficients) were determined from the optical transmittance spectra using the envelope method. Following the single electronic oscillator model, the single oscillator energy E-0, the dispersion energy E-d, the average interband oscillator wavelength lambda(0), the average oscillator strength S-0, the refractive index dispersion parameter (E-0/S-0), the chemical bonding quantity beta, and the long wavelength refractive index n(infinity) were obtained and analyzed. Both the refractive index and extinction coefficient of the BTO:In films are smaller than those of the BTO films. Furthermore, the refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity beta decreases in the BTO and BTO:In films compared with those of bulk. (C) 2007 Published by Elsevier B.V.

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.

Interface energy and its influence on interface fracture between metal and ceramic thin films in nanoscale

A theoretical model about the size-dependent interface energy between two thin films with different materials is developed by considering the chemical bonding contribution based on the thermodynamic expressions and the structure strain contribution based on the mechanical characteristics. The interface energy decreases with reducing thickness of thin films, and is determined by such available thermodynamic and mechanical parameters as the melting entropy, the melting enthalpy, the shear modulus of two materials, etc. The predicted interface energies of some metal/MgO and metal/Al2O3 interfaces based on the model are consistent with the results based on the molecular mechanics calculation. Furthermore, the interface fracture properties of Ag/MgO and Ni/Al2O3 based on the atomistic simulation are further compared with each other. The fracture strength and the toughness of the interface with the smaller structure interface energy are both found to be lower. The intrinsic relations among the interface energy, the interface strength, and the fracture toughness are discussed by introducing the related interface potential and the interface stress. The microscopic interface fracture toughness is found to equal the structure interface energy in nanoscale, and the microscopic fracture strength is proportional to the fracture toughness. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501090]

Crystal structures and elastic properties of superhard IrN2 and IrN3 from first principles

First principles calculations were performed to investigate the structural, elastic, and electronic properties of IrN2 for various space groups: cubic Fm-3m and Pa-3, hexagonal P3(2)21, tetragonal P4(2)/mnm, orthorhombic Pmmn, Pnnm, and Pnn2, and monoclinic P2(1)/c. Our calculation indicates that the P2(1)/c phase with arsenopyrite-type structure is energetically more stable than the other phases. It is semiconducting (the remaining phases are metallic) and contains diatomic N-N with the bond distance of 1.414 A. These characters are consistent with the experimental facts that IrN2 is in lower symmetry and nonmetallic. Our conclusion is also in agreement with the recent theoretical studies that the most stable phase of IrN2 is monoclinic P2(1)/c. The calculated bulk modulus of 373 GPa is also the highest among the considered space groups. It matches the recent theoretical values of 357 GPa within 4.3% and of 402 GPa within 7.8%, but smaller than the experimental value of 428 GPa by 14.7%. Chemical bonding and potential displacive phase transitions are discussed for IrN2. For IrN3, cubic skutterudite structure (Im-3) was assumed.

Density functional studies of diatomic LaO to LuO

Bond distances, vibrational frequencies, electron affinities, ionization potentials, dissociation energies and dipole moments of the title molecules in neutral, positively and negatively charged ions were studied by use of density functional method. Ground electronic state was assigned for each molecule. The bonding patterns were analyzed and compared with both the available data and across the series. It was found that besides ionic component, covalent bonds are formed between the metal s, d and f orbitals and oxygen p orbitals. Contrary to the well known lanthanide contraction, the bond distance is not regular from LaO to LuO for both neutral and charged molecules. An obvious population at 5d orbital was observed through the lanthanide series. 4f electrons also participate the chemical bonding for CeO to NdO and TbO to TmO. For EuO, GdO, YbO and LuO, 4f electrons tend to be localized. The spin multiplicity is regular for neutral and charged molecules. The spin multiplicity of the charged molecules can be obtained by -1 (or +1 for TbO+, DyO+, YbO- and YbO+) compared with the corresponding neutral molecules.

Synthesis and characterization of polyethylene chains grafted onto the sidewalls of single-walled carbon nanotubes via copolymerization

Polyethylene (PE) chains grafted onto the sidewalls of SWCNTs (SWCNT-g-PE) were successfully synthesized via ethylene copolymerization with functionalized single-walled carbon nanotubes (f-SWCNTs) catalyzed by rac-(en)(THInd)(2)ZrCl2/ MAO. Here f-SWCNTs, in which alpha-alkene groups were chemically linked on the sidewalls of SWCNTs, were synthesized by Prato reaction. The composition and microstructure of SWCNT-g-PE were characterized by means of H-1 NMR, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, thermogravimetric analyses (TGA), field-emission scanning electron microscope (FESEM), and transmission electron microscope (TEM). Nanosized cable-like structure was formed in the SWCNT-g-PE, in which the PE formed a tubular shell and several SWCNTs bundles existed as core. The formation of the above morphology in the SWCNT-g-PE resulted from successfully grafting of PE chains onto the surface of SWCNTs via copolymerization. The grown PE chains grafted onto the sidewall of the f-SWCNTs promoted the exfoliation of the mass nanotubes. Comparing with pure PE, the physical mixture of PE/f-SWCNTs and in situ PE/SWCNTs mixture, thermal stability, and mechanical properties of SWCNT-g-PE were higher because of the chemical bonding between the f-SWCNTs and PE chains.

Theoretical studies of nonlinear optical properties of compounds K(4)Ln(2)(CO3)(3)F-4 (Ln=Pr, Nd, Sm, Eu, Gd)

K(4)Ln(2)(CO3)(3)F-4 (Ln=Pr, Nd, Sm, Eu, Gd) is a special type of frequency doubling compound, whose crystal structure exhibits a scarcity of fluorine ions. This leads to two different coordination polyhedrons in the general position of K(2) atoms: [K(2)O6F(1)(2)F(2)] and [K(21)O6F(1)(2)] in a 2/1 ratio. The chemical bonding structures of all constituent atoms of the compound K4Gd2(CO3)(3)F-4 (KGCOF) are comprehensively studied; moreover, the relationship between the chemical bonding structure and the nonlinear optical (NLO) properties is investigated from the chemical bond viewpoint. The theoretical prediction of the NLO tensor coefficient d(11) of KGCOF is in agreement with experimental observation. Theoretical analyses show that the nonlinearity of this crystal type mainly originates from K-O bonds. In addition, the correlation between the NLO tensor d(11) and the refractive index n(0) of KGCOF is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)07506-X].

CALCULATIONS FOR THE VIBRATION FREQUENCIES OF THE O-H...O BOND IN KH2PO4 BY A SEMIEMPIRICAL METHOD

The frequencies of the stretching vibration and the bending vibration of the 0-H ... 0 bond in potassium dihydrogen phosphate have been calculated by means of two semiempirical formulae with three parameters. The calculated results can give satisfactory explanation for the experimental spectra of the potassium dihydrogen phosphate crystal. The parameters used in the calculations may be related to the chemical bonding and the charge distribution about the two oxygen atoms of the 0-H ... 0 bond system.

MOSSBAUER-EFFECT STUDIES OF THE DIMER OF A BIMETALLIC EU-AL COMPLEX

Mossbauer spectra of the dimer of a bimetallic Eu-Al complex, [(CF3COO)3EuHAl(C2H5)2 . 2 THF]2 are measured at different temperatures (81 to 166 K) and some Mossbauer parameters, such as isomer shift, electric quadrupole splitting and asymmetric parameter, are derived from the experimental spectra. The Debye temperature of the compound determined by a Debye model is 128 K. The results indicate that europium in the organo-europium compound is trivalent and that a bridging hydrogen atom between two europium atoms exists in the dimer. The low Debye temperature implies that the weaker binding force between the europium atom and the lattice may be related to the structure and the chemical bonding in the organometallic compound of europium.

α- i β- fluorowane aminofosfoniany – synteza oraz właściwości

Wydział Chemii

Affinity of divalent mercury towards nitrogen donor ligands

As with gold, relativistic effects are important in the chemistry of mercury Together with the closed-shell d(10) configuration of Hg2+ they account for the special bonding schemes as preferred linear coordination with highly covalent contributions to chemical bonding or special affinities to nitrogen and sulfur that are so prominent in mercuric chemistry This research report summarizes recent research on coordination compounds with halogen, oxygen and, especially, nitrogen as direct bonding partners of di-valent mercury and their competition with each other. In a rather systematic way N-donor ligands with one, two and more than two nitrogen atoms have been inspected in order to elucidate the influences that lead to the special bonding schemes of Hg-II-N compounds.