Comparisons between 28 Gb/s NRZ, PAM, CAP and optical OFDM systems for datacommunication applications

Theoretical investigations have been performed to analyze and compare the link power budget and power dissipation of a 28 Gb/s datacommunication system for data center switch scenarios using NRZ, PAM-4, CAP-16 and 16-QAM-OFDM modulation schemes. © 2012 IEEE.

Gigabit NRZ, CAP and optical OFDM systems over POF links using LEDs

Simulations have been performed to compare the system capacity and power dissipation of NRZ, CAP-64 and 64-QAM-OFDM systems over FEC enhanced POF links using LEDs, for both unidirectional and bidirectional transmission. It is shown that CAP-64 outperforms NRZ and 64-QAM-OFDM in terms of system capacity and supports a record high 3.5Gb/s bidirectional and 2.1Gb/s unidirectional transmissions over 50m POF. The CAP-64 transceiver consumes similar power compared with NRZ whilst the 64-QAM-OFDM transceiver consumes about twice as much. © 2012 Optical Society of America.

Performance and power dissipation comparisons between 28 Gb/s NRZ, PAM, CAP and optical OFDM systems for data communication applications

Theoretical investigations have been carried out to analyze and compare the link power budget and power dissipation of non-return-to-zero (NRZ), pulse amplitude modulation-4 (PAM-4), carrierless amplitude and phase modulation-16 (CAP-16) and 16-quadrature amplitude modulation-orthogonal frequency division multiplexing (16-QAM-OFDM) systems for data center interconnect scenarios. It is shown that for multimode fiber (MMF) links, NRZ modulation schemes with electronic equalization offer the best link power budget margins with the least power dissipation for short transmission distances up to 200 m; while OOFDM is the only scheme which can support a distance of 300 m albeit with power dissipation as high as 4 times that of NRZ. For short single mode fiber (SMF) links, all the modulation schemes offer similar link power budget margins for fiber lengths up to 15 km, but NRZ and PAM-4 are preferable due to their system simplicity and low power consumption. For lengths of up to 30 km, CAP-16 and OOFDM are required although the schemes consume 2 and 4 times as much power respectively compared to that of NRZ. OOFDM alone allows link operation up to 35 km distances. © 1983-2012 IEEE.

Comparisons between gigabit NRZ, CAP and optical OFDM systems over FEC enhanced POF links using LEDs

Simulations have been performed to compare the link power budget and power dissipation of carrierless amplitude and phase modulation-64 (CAP-64) and 64-quadrature amplitude modulation-orthogonal frequency division multiplexing (64-QAM-OFDM) systems over feedforward error correction (FEC) enhanced plastic optical fibre (POF) links using light emitting diodes (LEDs). It is shown that CAP-64 outperforms 64-QAM-OFDM and supports record high 2.1Gb/s over 50m POF transmission. The CAP-64 and 64-QAM-OFDM links consume similar powers which are 2 (2.5) times of that of NRZ for the single POF link (twin POF links) case. © 2012 IEEE.

FEC-free 50 m 1.5 Gb/s plastic optical fibre link using CAP modulation for home networks

LED-based carrierless amplitude and phase modulation is investigated for a multi-gigabit plastic optical fibre link. An FPGA-based 1.5 Gbit/s error free transmission over 50 m standard SI-POF using CAP64 is achieved, providing 2.9 dB power margin without forward error correction. © 2012 OSA.

Comparison of 100 Gb/s Ethernet links using PAM-8, multi-pulse, and hybrid CAP-16/QAM-16 modulation schemes

A theoretical study compares 100 Gb/s Ethernet links and finds that multi-pulse and hybrid CAP-16/QAM-16 (PAM-8) schemes support transmission over 10 km (2 km) SMF. Multi-pulse and CAP-16/QAM-16 need 2× the number of arithmetic operations and 7× or 3× the number of filter taps respectively but exhibit reduced power dissipation compared with PAM-8.

FEC-free 50 m 1.5 Gb/s plastic optical fibre link using CAP modulation for home networks

LED-based carrierless amplitude and phase modulation is investigated for a multi-gigabit plastic optical fibre link. An FPGA-based 1.5 Gbit/s error free transmission over 50 m standard SI-POF using CAP64 is achieved, providing 2.9 dB power margin without forward error correction. © 2012 Optical Society of America.

Experimental demonstration of optical data links using a hybrid CAP/QAM modulation scheme.

The first known experimental demonstrations of a 10 Gb/s hybrid CAP-2/QAM-2 and a 20 Gb/s hybrid CAP-4/QAM-4 transmitter/receiver-based optical data link are performed. Successful transmission over 4.3 km of standard single-mode fiber (SMF) is achieved, with a link power penalty ∼0.4 dBo for CAP-2/QAM-2 and ∼1.5 dBo for CAP-4/QAM-4 at BER=10(-9).

High performance optical data links using hybrid CAP/QAM transmitter/receiver scheme

We experimentally demonstrate the first optical data link at 20Gb/s using hybrid CAP- 4/QAM-4 with transmission over 4.3km SSMF and a power penalty ~1.5dBo at BER=10-9. The hybrid CAP-4/QAM-4 link significantly outperforms a reference PAM-4 link. © OSA 2013.

Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots

We have investigated the effect of different cap layers on the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs). Based upon different cap layers, the wavelength of InAs QDs can be tuned to the range from 1.3 to 1.5 mum. An InAlAs and InGaAs combination layer can enlarge the energy separation between the ground and first excited radiative transition. GaAs/InAs short period superlattices (SLs) make the emission wavelength shift to 1.53 mum. The PL intensity of InAs QDs capped with GaAs/InAs SLs shows an anomalous increase with increasing temperature. We attribute this to the transfer of carriers between different QDs.

Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

We have investigated the effect of InAlAs/InGaAs cap layer on the optical properties of self-assembled InAs/GaAs quantum dots (QDs). We find that the photoluminescence emission energy, linewidth and the energy separation between the ground and first excited states of InAs QDs depend on the In composition and the thickness of thin InAlAs cap layer. Furthermore, the large energy separation of 103 meV was obtained from InAs/GaAs QDs with emission at 1.35 pm at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.