992 resultados para Applied Relaxation


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The developments of physical aging in phenolphthalein poly(aryl-ether-ketone) (PEK-C) and poly(aryl-ether-sulfone) (PES-C) with time at two aging temperatures up to 20 K below their respective glass transition temperatures (T-g = 495 and 520 K) have been studied using differential scanning calorimetry (DSC). Substantial relaxation within the aging course of several hours were observed by detecting T-g decreasing during physical aging process at the two aging temperatures. The relaxation processes of both polymers are extremely nonlinear and self-retarding. The time dependencies of their enthalpies during the initial stages of annealing were approximately modeled using the Narayanaswamy-Tool model. The structure relaxation parameters obtained from this fitting were used to predict the possibility of physical aging occurring at their respective using temperatures. (C) 1995 John Wiley and Sons, Inc.

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According to stress relaxation curves of phenolphthalein poly(ether ketone) (PEK-C) at different temperatures and the principle of time-temperature equivalence, the master curves of PEK-C at arbitrary reference temperatures are obtained. A coupling model (Kohlrausch-Williams-Watts) is applied to explain quantitatively the different temperature dependence of stress relaxation behavior and the relationship between stress relaxation and yield phenomenon is established through the coupling model.

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Shrinkage, retractive stress, and infrared dichroism of the drawn low-density polyethylene (LDPE) as-drawn and irradiated by Co-60-ray have been measured under different annealing conditions. The shrinkage and the disorientation of the irradiated sample was undergone more rapidly than that of unirradiated one as the temperature was continuously increased, surpassing a certain value, and a higher degree of shrinkage and disorientation was achieved finally for the irradiated sample when the samples were annealed with free ends. For the samples heated isothermally with fixed ends, the retractive stress went through a maximum and then attenuated to a limited value, and the degree of such a stress attenuation for the unirradiated sample was much more than that for the irradiated sample. These results show that the taut tie molecules (TTMs) in drawn PE can relax by the pulling of chain segments out of crystal blocks that they anchored in at elevated temperatures higher than the a transition and also by the displacing of microfibrils if the samples were annealed with free ends. The cross-links produced by irradiation prohibit the former process. It was further observed that the dependence of the average extinction coefficient of the band at 2016 cm-1 on that of the band at 1894 cm-1 is related to irradiation and annealing conditions, which has also been explained by the relaxation of TTMs and the function of irradiation-induced cross-linking on the relaxation.

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Wind energy is predominantly a nonsynchronous generation source. Large-scale integration of wind generation with existing electricity systems, therefore, presents challenges in maintaining system frequency stability and local voltage stability. Transmission system operators have implemented system operational constraints (SOCs) in order to maintain stability with high wind generation, but imposition of these constraints results in higher operating costs. A mixed integer programming tool was used to simulate generator dispatch in order to assess the impact of various SOCs on generation costs. Interleaved day-ahead scheduling and real-time dispatch models were developed to allow accurate representation of forced outages and wind forecast errors, and were applied to the proposed Irish power system of 2020 with a wind penetration of 32%. Savings of at least 7.8% in generation costs and reductions in wind curtailment of 50% were identified when the most influential SOCs were relaxed. The results also illustrate the need to relax local SOCs together with the system-wide nonsynchronous penetration limit SOC, as savings from increasing the nonsynchronous limit beyond 70% were restricted without relaxation of local SOCs. The methodology and results allow for quantification of the costs of SOCs, allowing the optimal upgrade path for generation and transmission infrastructure to be determined.

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Brown's model for the relaxation of the magnetization of a single domain ferromagnetic particle is considered. This model results in the Fokker-Planck equation of the process. The solution of this equation in the cases of most interest is non- trivial. The probability density of orientations of the magnetization in the Fokker-Planck equation can be expanded in terms of an infinite set of eigenfunctions and their corresponding eigenvalues where these obey a Sturm-Liouville type equation. A variational principle is applied to the solution of this equation in the case of an axially symmetric potential. The first (non-zero) eigenvalue, corresponding to the largest time constant, is considered. From this we obtain two new results. Firstly, an approximate minimising trial function is obtained which allows calculation of a rigorous upper bound. Secondly, a new upper bound formula is derived based on the Euler-Lagrange condition. This leads to very accurate calculation of the eigenvalue but also, interestingly, from this, use of the simplest trial function yields an equivalent result to the correlation time of Coffey et at. and the integral relaxation time of Garanin. (C) 2004 Elsevier B.V. All rights reserved.

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A detailed investigation on the nature of the relaxation processes occurring in a typical room temperature ionic liquid (RTIL), namely, 1-butyl-3-methyl imidazolium hexafluorophosphate ([bmim][PF6]), is reported. The study was conducted using both elastic and inelastic neutron scattering over a wide temperature range from 10 to 400 K, accessing the dynamic features of both the liquid and glassy amorphous states. In this study, the inelastic fixed energy scan technique has been applied for the first time to this class of materials. Using this technique, the existence of two relaxation processes below the glass transition and a further diffusive process occurring above the glass-liquid transition are observed. The low temperature processes are associated with methyl group rotation and butyl chain relaxation in the glassy state and have been modeled in terms of two Debye-like, Arrhenius activated processes. The high temperature process has been modeled in terms of a Kohlraush-Williams-Watts relaxation, with a distinct Vogel-Fulcher-Tamman temperature dependence. These results provide novel information that will be useful in rationalizing the observed structural and dynamical behavior of RTILs in the amorphous state.

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Ceria (CeO2) and ceria-based composite materials, especially Ce1-xZrxO2 solid solutions, possess a wide range of applications in many important catalytic processes, such as three-way catalysts, owing to their excellent oxygen storage capacity (OSC) through the oxygen vacancy formation and refilling. Much of this activity has focused on the understanding of the electronic and structural properties of defective CeO2 with and without doping, and comprehending the determining factor for oxygen vacancy formation and the rule to tune the formation energy by doping has constituted a central issue in material chemistry related to ceria. However, the calculation on electronic structures and the corresponding relaxation patterns in defective CeO2-x oxides remains at present a challenge in the DFT framework. A pragmatic approach based on density functional theory with the inclusion of on-site Coulomb correction, i.e. the so-called DFT + U technique, has been extensively applied in the majority of recent theoretical investigations. Firstly, we review briefly the latest electronic structure calculations of defective CeO2(111), focusing on the phenomenon of multiple configurations of the localized 4f electrons, as well as the discussions of its formation mechanism and the catalytic role in activating the O-2 molecule. Secondly, aiming at shedding light on the doping effect on tuning the oxygen vacancy formation in ceria-based solid solutions, we summarize the recent theoretical results of Ce1-xZrxO2 solid solutions in terms of the effect of dopant concentrations and crystal phases. A general model on O vacancy formation is also discussed; it consists of electrostatic and structural relaxation terms, and the vital role of the later is emphasized. Particularly, we discuss the crucial role of the localized structural relaxation patterns in determining the superb oxygen storage capacity in kappa-phase Ce1-xZr1-xO2. Thirdly, we briefly discuss some interesting findings for the oxygen vacancy formation in pure ceria nanoparticles (NPs) uncovered by DFT calculations and compare those with the bulk or extended surfaces of ceria as well as different particle sizes, emphasizing the role of the electrostatic field in determining the O vacancy formation.

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L’apprentissage machine est un vaste domaine où l’on cherche à apprendre les paramètres de modèles à partir de données concrètes. Ce sera pour effectuer des tâches demandant des aptitudes attribuées à l’intelligence humaine, comme la capacité à traiter des don- nées de haute dimensionnalité présentant beaucoup de variations. Les réseaux de neu- rones artificiels sont un exemple de tels modèles. Dans certains réseaux de neurones dits profonds, des concepts "abstraits" sont appris automatiquement. Les travaux présentés ici prennent leur inspiration de réseaux de neurones profonds, de réseaux récurrents et de neuroscience du système visuel. Nos tâches de test sont la classification et le débruitement d’images quasi binaires. On permettra une rétroac- tion où des représentations de haut niveau (plus "abstraites") influencent des représentations à bas niveau. Cette influence s’effectuera au cours de ce qu’on nomme relaxation, des itérations où les différents niveaux (ou couches) du modèle s’interinfluencent. Nous présentons deux familles d’architectures, l’une, l’architecture complètement connectée, pouvant en principe traiter des données générales et une autre, l’architecture convolutionnelle, plus spécifiquement adaptée aux images. Dans tous les cas, les données utilisées sont des images, principalement des images de chiffres manuscrits. Dans un type d’expérience, nous cherchons à reconstruire des données qui ont été corrompues. On a pu y observer le phénomène d’influence décrit précédemment en comparant le résultat avec et sans la relaxation. On note aussi certains gains numériques et visuels en terme de performance de reconstruction en ajoutant l’influence des couches supérieures. Dans un autre type de tâche, la classification, peu de gains ont été observés. On a tout de même pu constater que dans certains cas la relaxation aiderait à apprendre des représentations utiles pour classifier des images corrompues. L’architecture convolutionnelle développée, plus incertaine au départ, permet malgré tout d’obtenir des reconstructions numériquement et visuellement semblables à celles obtenues avec l’autre architecture, même si sa connectivité est contrainte.

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The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain

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The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

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Conventional procedures employed in the modeling of viscoelastic properties of polymer rely on the determination of the polymer`s discrete relaxation spectrum from experimentally obtained data. In the past decades, several analytical regression techniques have been proposed to determine an explicit equation which describes the measured spectra. With a diverse approach, the procedure herein introduced constitutes a simulation-based computational optimization technique based on non-deterministic search method arisen from the field of evolutionary computation. Instead of comparing numerical results, this purpose of this paper is to highlight some Subtle differences between both strategies and focus on what properties of the exploited technique emerge as new possibilities for the field, In oder to illustrate this, essayed cases show how the employed technique can outperform conventional approaches in terms of fitting quality. Moreover, in some instances, it produces equivalent results With much fewer fitting parameters, which is convenient for computational simulation applications. I-lie problem formulation and the rationale of the highlighted method are herein discussed and constitute the main intended contribution. (C) 2009 Wiley Periodicals, Inc. J Appl Polym Sci 113: 122-135, 2009

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We analyze the influence of a surface dielectric layer on the transient phenomena related to the ionic redistribution in an electrolytic cell submitted to a step-like external voltage. The adsorption-desorption phenomenon is taken into account in the famework of the Gouy-Chapman approximation, where the ions are assumed dimensionless. In the limit of small amplitude of the applied voltage, where the equations of the problem can be linearized, we obtain an analytical solution for the surface densities of ions, for the electrical potential and for the relaxation time for the transient phenomena. In the general case, when the linearized analysis is no longer valid, the solution of the problem is obtained numerically. The role of the thickness of the dielectric layer on the relaxation time is also discussed.

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In this work we applied a quantum circuit treatment to describe the nuclear spin relaxation. From the Redfield theory, we obtain a description of the quadrupolar relaxation as a computational process in a spin 3/2 system, through a model in which the environment is comprised by five qubits and three different quantum noise channels. The interaction between the environment and the spin 3/2 nuclei is described by a quantum circuit fully compatible with the Redfield theory of relaxation. Theoretical predictions are compared to experimental data, a short review of quantum channels and relaxation in NMR qubits is also present.