Relationship of dimensions and weight in freshwater planktonic crustaceans. [Translation from: Doklady Akademii Nauk SSSR 84(1) 153-156, 1952. ]

There is no doubt that determination of the biomass of zooplankton (primarily of crustaceans) will be taken into consideration in practice and limnological works, especially after the recent publication of fairly comprehensive tables of weights of a whole range of species of freshwater copepods and cladocerans. The usefulness of applying formulae of determining the biomass of marine crustaceans for freshwater copepods is discussed.

Some biological features of Saprolegnia parasitica Coker - cause of fish dermatomycosis. [Translation from: Pervaya nauchnaya konferentsiya molodykh Uchenykh Biologov (Tezisy Dokladov) pp.84-86. Kiev, A.N.Ukr. SSR., 1964]

Parasitic and infectious diseases of fish, of wide distribution in fish-rearing ponds, retard to a significant extent the development of fish culture in the Ukraine. One of the diseases of fish attracting attention in connection with the general distribution of its causative agent, the fungus Saprolegnia parasitica Coker, in water-bodies of various types, appears to be dermatomycosis. The aim of this investigation is to study the conditions favouring the development of S. parasitica. Among the studied factors were water temperature and oxygen content.

Cálculo de área de poligonais geodésicas ou loxodrômicas sobre o elipsóide do Sistema Geodésico WGS-84.

O cálculo da área de poligonais geodésicas é um desafio matemático instigante. Como calcular a área de uma poligonal sobre o elipsóide, se seus lados não possuem parametrização conhecida? Alguns trabalhos já foram desenvolvidos no intuito de solucionar este problema, empregando, em sua maioria, sistemas projetivos equivalentes ou aproximações sobre esferas autálicas. Tais métodos aproximam a superfície de referência elipsoidal por outras de mais fácil tratamento matemático, porém apresentam limitação de emprego, pois uma única superfície não poderia ser empregada para todo o planeta, sem comprometer os cálculos realizados sobre ela. No Código de Processo Civil, Livro IV, Título I, Capítulo VIII, Seção III artigo 971 diz, em seu parágrafo único, que não havendo impugnação, o juiz determinará a divisão geodésica do imóvel. Além deste, existe ainda a Lei 10.267/2001, que regula a obrigatoriedade, para efetivação de registro, dos vértices definidores dos limites dos imóveis rurais terem suas coordenadas georreferenciadas ao Sistema Geodésico Brasileiro (SGB), sendo que áreas de imóveis menores que quatro módulos fiscais terão garantida isenção de custos financeiros.Este trabalho visa fornecer uma metodologia de cálculo de áreas para poligonais geodésicas, ou loxodrômicas, diretamente sobre o elipsóide, bem como fornecer um programa que execute as rotinas elaboradas nesta dissertação. Como a maioria dos levantamentos geodésicos é realizada usando rastreadores GPS, a carga dos dados é pautada em coordenadas (X, Y, Z), empregando o Sistema Geodésico WGS-84, fornecendo a área geodésica sem a necessidade de um produto tipo SIG. Para alcançar o objetivo deste trabalho, foi desenvolvida parametrização diferente da abordagem clássica da Geodésia geométrica, para transformar as coordenadas (X, Y, Z) em geodésicas.

Campagne Nizery Togo 7 (19 au 21-O7-84): resultats des chalutages

This publication gives the results of the bottom trawlings made during the cruise TOGO 7 by the oceanographic research vessel Andre Nizery on the continental shelf of Togo during the estimation program of halieutic resources.

Campagnes Chalci, Chalci 84-01 (du 17 au 25-01-84) et Chalci 84-02 (du 03 au 11-07-84): resultats des chalutages

This publication gives the results of bottom trawlings made during the cruises CHALCI 84-01 and CHALCI 84-02 by the oceanographic research vessel "Andre NIZERY" sur le plateau continental ivoirien.

Campagnes Nizery: Togo 5 (01 to 03/03/84) and Togo 6 (26 to 28/03/84). Resultats des chalutages

This publication gives the results of the bottom trawlings made during the cruises Togo 5 and Togo 6 by the oceanographic research vessel "Andre Nizery" on the continental shelf of Togo during the estimation program of halieutic resources. The report includes: 1 - the report of the cruises Togo 5 and Togo 6; 2 - Some information on the presentation of the results; 3 - the trawl recording maps for the 2 cruises; 4 - The length frequency distributions of the measured samples.

重组人甲状旁腺素(rhPTH(1-84))的原核表达及发酵条件初步优化

下载PDF阅读器甲状旁腺激素(Parathyroid Hormone,PTH)是治疗骨质疏松症的药物之一.将人工合成全长人PTH(hPTH(1-84))的核苷酸序列插入pThioHis A载体中,然后转化大肠杆菌(Escherichia coli.),在IPTG的诱导下,成功实现了rhPTH(1-84)的原核表达.通过发酵条件的优化,初步确定1:40接种.LB+30% M9盐溶液的发酵培养基,37℃培养至OD600nm=0.8时,加入终浓度为0.6 mmol/L的IPTG,诱导8 h的较优发酵程序.

The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates

Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.

Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.