970 resultados para 33-317B


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采用3×3耦合器的光纤光栅激光传感系统(FBGLS)的波长解调结果依赖于3×3耦合器的物理特性,解调结果会因3×3耦合器三路输出的直流项、干涉条纹可见度和相位差参数的不稳定而发生一定程度的失真。理论推导给出了标定参数的方法并实现了计算机编程,能够在较大信号时实时给出标定结果,同时给出了相应的解调方案。计算机模拟发现采用上述方法消除了由3×3耦合器三路输出的参数不稳定带来的谐波,实验中解调结果的对比表明该方法带来一定程度的改善,和标准参考传感器测量结果有很高的相关性,此外基于该解调方案的光纤光栅激光传感系统具有较高的分辨率、动态范围和线性度。

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Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

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于2010-11-23批量导入

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在不同角度测得的 33 4MeV/u17N +9Be反应中 ,发射中子的能谱具有复杂的形式 ,而且随着角度的增大显示出有规律的变化 发射中子至少来源于靶弹核间的核子 -核子碰撞、17N的破裂反应以及熔合热核的统计蒸发三种不同起源 分析结果表明 :反应体系三种起源的发射中子截面分别为 4 4 9,0 4 4和 5 5b

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利用SHACAL-2的一个17轮差分非线性区分器,结合被猜测子密钥空间分割的方法和快速傅立叶变换,提出了一种攻击33轮SHACAL-2的新方法.该方法攻击33轮SHACAL-2需要244的选择明文、2496.6的33轮SHACAL-2加密和2502次算术运算,攻击成功概率为99%.与已有的结果相比较,新攻击有效地提高了单密钥下SHACAL-2的攻击轮数.

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A series of complex perovskite solid solutions of Ba[(Mg1-xCdx)(0.33)Nb-0.67]O-3 have been synthesized by the columbite method. Detailed Rietveld refinement of their X-ray diffraction data show that Ba[(Mg1-xCdx)0(.33)Nb(0.67)]O-3 has an order trigonal structure. The ordering degree as determined by the B-site occupancies increases with the partial substitution of Cd for Mg.

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Ti-Zr-V-Mn-Ni-based multi-component alloys demonstrate high discharge capacity in KOH electrolyte. However, the drastic decrease in their discharge capacities makes them unsuitable for use as negative electrode material in the Ni/MH battery. In present work, Ni is partially replaced by Cr in the Ti-Zr-V-Mn-Ni-based alloys to improve their cycle life. The effects of Cr substitution on microstructures and the electrochemical characteristics of the alloys are investigated. It is found that Cr substitution is very effective to improve the cyclic durability of the alloys although the discharge capacity decreases with changing x from 0.05 to 0.20. Some kinetic performances have been also investigated using electrochemical impedance spectroscopy (EIS) and potentiostatic discharge technique.

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Bulk novel cemented carbides (W1-xAlx)C-10.1 vol% Co (x = 0.2, 0.33, 0.4, 0.5) are prepared by mechanical alloying and hot-pressing sintering. Hot-pressing (HP) is used to fabricate the bulk bodies of the hard alloys. The novel cemented carbides have good mechanical properties compared with WC-Co. The density and operating cost of the novel material is much lower than a WC-Co system. The material is easy to process and the processing leads to nano-scaled, rounded, particles in the bulk material. The hardness of (W1-xAlx)C-10.1 vol% Co (x = 0.2, 0.33, 0.4, 0.5) hard material is 20.37, 21.16, 21.59 and 22.16 GPa, and the bending strength is 1257, 1238, 1211 and 1293 MPa, with the aluminum content varying from 20% to 50%. The relationship between the microstructure and the mechanical properties of the novel hard alloy is also discussed.

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采用溶胶-凝胶法制备了不同烧结温度的钙钛矿类锰氧化物La0.67Sr0.33MnO3样品。实验结果表明,在1573 K以上烧结的样品,晶粒出现异常长大,晶界效应明显。随着烧结温度的提高,磁化强度逐渐增大,但样品的居里温度基本不变。此外,在1173和1573 K温度下烧结的样品,均出现了低于居里温度的金属-半导体导电行为转变。在合适的烧结条件下,可以观察到隧道磁电阻(TMR)和超大磁电阻(CMR)2种磁电阻效应。实验表明,自旋电子的输运,不仅与样品平均粒径的大小和密度有关,而且与晶界的微观结构有密切关系。

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W1-xAlxC (x = 0.33, 0.50, 0.75, 0.86) solid solutions have been synthesized directly by ball-milling tungsten powder, aluminum powder and activated carbon. The structural development of W0.5Al0.5C phase with the milling times up to 160 h has been followed using X-ray diffraction. X-ray photoelectron spectra demonstrate that Al atom takes the place of W. High temperature annealing experiment reveals that Al is stable in hexagonal structure to 1873 K. Transmission electron microscopy image shows that the grain size of the prepared powders is about 5 nm.

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This paper presents results concerning structure and electrochemical characteristics of the La0.67Mg0.33 (Ni0.8Co0.1Mn0.1) (x) (x=2.5-5.0) alloy. It can be found from the result of the Rietveld analyses that the structures of the alloys change obviously with increasing x from 2.5 to 5.0. The main phase of the alloys with x=2.5-3.5 is LaMg2Ni9 phase with a PuNi3-type rhombohedral structure, but the main phase of the alloys with x=4.0-5.0 is LaNi(5)phase with a CaCu5-type hexagonal structure. Furthermore, the phase ratio, lattice parameter and cell volume of the LaMg2Ni9 phase and the LaNi5 phase change with increasing x. The electrochemical studies show that the maximum discharge capacity increases from 214.7 mAh/g (x=2.5) to 391.1 mAh/g (x=3.5) and then decreases to 238.5 mAh/g (x=5.0). As the discharge current density is 1,200 mA/g, the high rate dischargeability (HRD) increases from 51.1% (x=2.5) to 83.7% (x=3.5) and then decreases to 71.6% (x=5.0). Moreover, the exchange current density (I-0) of the alloy electrodes first increases and then decrease with increasing x from 2.5 to 5.0, which is consistent with the variation of the HRD. The cell volume reduces with increasing x in the alloys, which is detrimental to hydrogen diffusion and accordingly decreases the low-temperature dischargeability of the alloy electrodes.

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Silicate oxyapatite La-9.33 (SiO6)(4)O-2:A (A = Eu3+, Tb3+ and/or Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, atomic force microscopy, optical microscopy and photoluminescence spectra, as well as lifetimes, were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800degreesC and the crystallinity increased with the increase in annealing temperatures. Transparent nonpatterned phosphor films were uniform and crack-free, which mainly consisted of rodlike grains with a size between 150 and 210 nm. Patterned thin films with different bandwidths (20, 50 mum) were obtained by the micromoulding in capillaries technique. The doped rare earth ions (Eu3+, Tb3+ and Ce3+) showed their characteristic emission in crystalline La-9.33(SiO6)(4)O-2 phosphor films, i.e. Eu3+ D-5(0)-F-7(J) (J = 0, 1, 2, 3, 4), Tb3+ D-5(3,4)-F-7(J) (J = 3, 4, 5, 6) and Ce3+ 5d (D-2)-4f (F-2(2/5), F-2(2/7)) emissions, respectively. Both the lifetimes and PL intensity of the Eu3+, Tb3+ ions increased with increasing annealing temperature from 800 to 1100 degreesC, and the optimum concentrations for Eu3+, Tb3+ were determined to be 9 and 7 mol% of La3+ in La-9.33(SiO6)(4)O-2 films, respectively. An energy transfer from Ce3+ to Tb3+ was observed in the La-9.33(SiO6)(4)O-2:Ce, Tb phosphor films, and the energy transfer efficiency was estimated as a function of Tb3+ concentration.

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合成了新化合物K_5H[Co_4(VW_9O_(33))·5H_2O,并运用IR,UV-ViS,DTA和单晶X射线衍射对其结构进行了表征.测定结果证实标题化合物具有α-B-Keggin型结构,两个(VW_9O_(33)~(7-)结构单元由四个Co(Ⅱ)O_6 八面体连接.杂多化合物属单斜晶系P2_(1/n),a=1.2307(3)nm,b=2.1250(4)nm,c=1.5817(3)nm,β=91.86(3)°,V=4.1343(14)nm~3,R=0.0895,R_w=0.2180.

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采用固相反应法在Al2O3-B2O3体系中合成了Al4B2O9和Al18B4O33两个相关化合物,测定了在两种基质中Ce3+,Tb3+和Ce3+-Tb3+的光谱,观察到在两种基质中Ce3+的光谱相似,Ce3+的发射峰位置在Al18B4O33中比Al4B2O9稍有红移。实验表明,Al18B4O33将是一种好的发光基质