Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers

Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01

Polarized spectral analysis of Ho3+ ions in biaxial YAlO3 crystal for 2 mu m lasers

An Ho3+-doped YAlO3 (Ho : YAP) single crystal has been grown by the Czochralski technique. The polarized absorption spectra, polarized fluorescence spectra and fluorescence decay curve of the crystal are measured at room temperature. The spectroscopic parameters are calculated based on Judd-Ofelt theory, and the effective phenomenological intensity parameters Omega(2,eff), Omega(4,eff) and Omega(6,eff) are obtained to be 2.89 x 10(-20), 2.92 x 10(-20) and 1.32 x 10(-20) cm(2), respectively. The room-temperature fluorescence lifetime of the Ho3+ 5I(7) -> I-5(8) transition is measured to be 8.1 ms. Values of the absorption and emission cross-sections with different polarizations are presented for the I-5(7) manifold, and the polarized gain cross-section curves are also provided and discussed.

Newly designed multilayer thin film mirror for dispersion compensation in Ti:sapphire femtosecond lasers

There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

Negative dispersion mirrors in Ta2O5/: SiO2 for femtosecond Ti : Sapphire lasers by using gires-tournois interferometers

We design and experimentally demonstrate some negative dispersion mirrors with optimized Gires-Tournois interferometers. The mirror structure is composed of 38 alternating Ta2O5 and SiO2 layers and could be regarded as two sections: high-reflectivity section consisting of a series of quarter-wavelength optical thickness stacks and negative-dispersion section consisting of only 13 layers. The designed mirrors exhibit the expected performance. These mirrors were fabricated by using ion beam sputtering. By adopting such mirrors, dispersion of a mode-locked femtosecond Ti:sapphire laser has been compensated for mostly. With two series of the mirrors, 32 fs and 15 fs pulses have been obtained respectively.

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.