Capillary bending of Janus carbon nanotube micropillars.

We present a scalable process for the fabrication of slanted carbon nanotube micropillar arrays by inclined metal deposition and capillary self-assembly. Local control of the micropillar angle from vertical to nearly horizontal is achieved, and is explained using a finite element model. These structures may be useful for microscale contacts and anisotropic smart surfaces.

Non-destructive characterization of structural hierarchy within aligned carbon nanotube assemblies

Understanding and controlling the hierarchical self-assembly of carbon nanotubes (CNTs) is vital for designing materials such as transparent conductors, chemical sensors, high-performance composites, and microelectronic interconnects. In particular, many applications require high-density CNT assemblies that cannot currently be made directly by low-density CNT growth, and therefore require post-processing by methods such as elastocapillary densification. We characterize the hierarchical structure of pristine and densified vertically aligned multi-wall CNT forests, by combining small-angle and ultra-small-angle x-ray scattering (USAXS) techniques. This enables the nondestructive measurement of both the individual CNT diameter and CNT bundle diameter within CNT forests, which are otherwise quantified only by delicate and often destructive microscopy techniques. Our measurements show that multi-wall CNT forests grown by chemical vapor deposition consist of isolated and bundled CNTs, with an average bundle diameter of 16 nm. After capillary densification of the CNT forest, USAXS reveals bundles with a diameter 4 m, in addition to the small bundles observed in the as-grown forests. Combining these characterization methods with new CNT processing methods could enable the engineering of macro-scale CNT assemblies that exhibit significantly improved bulk properties. © 2011 American Institute of Physics.

A temperature sensor from a self-assembled carbon nanotube microbridge

Recent studies show that carbon nanotubes (CNTs) can be used as temperature sensors, and offer great opportunities towards extreme miniaturization, high sensitivity, low power consumption, and rapid response. Previous CNT based temperature sensors are fabricated by either dielectrophoresis or piece-wise alignment of read-out electronics around randomly dispersed CNTs. We introduce a new deterministic and parallel microsensor fabrication method based on the self-assembly of CNTs into three-dimensional microbridges. We fabricated prototype microbridge sensors on patterned electrodes, and found their sensitivity to be better than -0.1 %/K at temperatures between 300K and 420K. This performance is comparable to previously published CNT based temperature sensors. Importantly, however, our research shows how unique sensor architectures can be made by self-assembly, which can be achieved using batch processing rather than piecewise assembly. ©2010 IEEE.

Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 American Institute of Physics.

Self-organized hexagonal ordering of quantum dot arrays

We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally aligned in a hexagonal way thus forming three-dimensionally ordered arrays. The growth pathway is based on a mechanism of self-assembly by strain-mediated multilayer vertical stacking on a planar GaAs(100) substrate, rather than molecular-beam epitaxy on a prepatterned substrate. The strain energy of lateral island-island interaction is minimum for the arrangement of hexagonal ordering. However, realization of hexagonal ordering not only depends on a complicated trade-off between lateral and vertical island-island interaction but is also related to a delicate and narrow growth kinetics window.

Micro-mould method for self-assembling three-dimensional opal photonic crystals

By vertical sedimentation, silica micro-spheres were grown in different shapes of concave micro-zones which were etched on a (100) p-silicon substrate. The following were found: this method can effectively raise the quality of films by avoiding cracks; the geometry of the micro-zones affects the sediment of the film; regular hexagons and triangles best facilitate the growth of photonic crystals. This method is practical for its ability to fabricate self-assembly photonic crystals in previously designed small areas.

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates

Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (MBE) were reported. InAs/GaAs (3 1 1)A QDs with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by AFM image. Low defect and dislocation density on the QDs interfaces were indicated by the linear dependence of photoluminescence (PL) intensity on the excitation power. The fast red shift of PL energy and the monotonic decrease of FWHM with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying QDs states. (C) 1999 Elsevier Science B.V. All rights reserved.

层层组装制备低介电常数超薄膜

低介电常数材料可作为微电子器件的层间或是导线间的绝缘材料，以提高微电子芯片的信号传输速率。在聚合物材料中引入氟元素或引入空洞可以有效降低聚合物材料介电常数。本文利用层层组装的方法在聚合物中引入空洞以降低聚合物材料的介电常数。这样，不仅能够获得低介电常数材料，而且可以得到超薄膜，对于降低电子元件的尺寸、提高芯片的信号传输速率具有实际的应用价值。 对具有笼状结构的八苯代聚倍半硅氧烷（OPS）采取先用发烟硝酸硝化为带有硝基的产物ONPS，然后再以水合肼作为还原剂将硝基还原为胺基的两步反应方法，制得了带有胺基的聚倍半硅氧烷（OAPS）。用NMR、FTIR方法对合成过程从原料、中间产物、及目标产物进行跟踪分析证明反应结束后，OAPS仍然具有完整的笼状结构，并且胺基化很完全。另外，利用发烟硫酸作为磺化试剂，采用一步合成的方法制得了磺化OPS（SOPS）。经NMR、FTIR表征，确认了SOPS的结构，磺酸基是在苯环上Si的间位发生了取代。经XPS分析得知，OPS上约有91％的苯环参与了磺化反应。在合适的条件下SOPS与OAPS都可以溶于水，分别带有负电荷与正电荷。 然后，利用合成的SOPS与聚丙烯胺(PAH)进行组装。当PAH溶液的pH值小于7.5时，SOPS在PAH溶液中产生脱落现象。通过调节PAH溶液的pH值，可以控制SOPS在PAH溶液中的脱落现象。当PAH溶液的pH值为9.0时，SOPS在PAH溶液中不再脱落。紫外数据表明，尽管组装过程中SOPS在PAH溶液中会有部分脱落，但这并不影响SOPS/PAH复合多层膜的组装。当溶液的pH为3.0时，OAPS溶于水中并带有正电荷。带有负电荷的聚对苯乙烯磺酸钠（PSS）、聚丙烯酸（PAcA）分别与带有正电荷的OAPS实现层层组装。经过QCM、Contact Angle、XPS、UV等方法表征，证明OAPS/PSS与OAPS/PAcA复合多层膜组装过程中生长均匀，并且多层膜厚度可控。用椭圆偏振的方法测得OAPS/PAcA多层膜的折光指数，运用Maxwell方程将其转化为介电常数为2.01，较纯聚丙烯酸的介电常数（2.56）有明显的降低。加热处理OAPS/PAcA多层膜，红外（FTIR）光谱数据显示OAPS与PAcA间发生了交联反应，形成新的酰胺键。紫外可见（UV-Vis）光谱数据也表明，加热后的OAPS/PAcA多层膜在强酸性溶液中的稳定性较加热前的样品有极大的提高。 合成了聚酰胺酸，并将其制成可溶于水的聚酰胺酸三乙胺盐（PAAs）。调节PAAs溶液的pH值为7.5，使之带有负电荷，可以与带有正电荷的OctaAmmonium（OA-POSS）纳米粒子进行组装。QCM数据显示，当OA-POSS的pH为4.5时，PAAs与OA-POSS的组装量相当，组装量比较大。UV-Vis、XPS数据表明，OA-POSS与PAAs可以实现层层组装，并且组装均匀，可控。加热交联后，PAAs能够很容易地转化为聚酰亚胺（PI）。 调节溶液的pH值，使豇豆花叶病毒（CPMV）表面带有负电。以聚阳离子的聚二烯丙基二甲基胺盐酸盐（PDDA）和聚丙烯胺（PAH）作为插层材料可以实现PAAs与CPMV的层层组装，制得复合多层膜[PDDA/CPMV+(PDDA/PAAs)m]n和[PAH/CPMV+(PAH/PAAs)m]n。QCM、UV-Vis数据表明，多层组装膜的厚度可以通过改变[PAH/CPMV+(PAH/PAAs)m]或[PDDA/CPMV+(PDDA/PAAs)m]的组装循环层数进行调节。而且，薄膜中CPMV与PAAs的比例也可以通过改变（PAH/PAAs）或（PDDA/PAAs）的循环个数进行调节。得到组装多层膜后，将其进行加热处理。FTIR数据显示，以PAH、PDDA作为插层所制备得到的CPMV/PAAs复合多层膜经过加热处理后，PAAs向PI的转化非常完全。用椭圆偏振的方法测试加热交联前后的多层膜样品[PAH/CPMV+(PAH/PAAs)m]n的厚度及折光指数，可以得知，加热处理后，薄膜的厚度稍有降低。将折光指数用Maxwell方程转化为介电常数为2.32，这一数值比纯聚酰亚胺的介电常数值（3.40）降低很多，归因于聚酰亚胺中引入带有空洞结构的CPMV，使聚酰亚胺的密度降低，从而降低材料的介电常数。

可生物降解的两亲性嵌段共聚物的自聚集行为研究

可生物降解的两亲性嵌段共聚物PLA-PEG飞所制备的胶束或纳术粒子，作为潜在的药物控制释放体系弓！起人们广泛的兴趣。，方们授有寿比山于PEG链的空间位阴．效应可以避免单核噬菌体的吞噬，、并且可以通过控制可降解部分的降解行为实现药物的持续释放，使在微载体内所包载的药物分子持续释放出来。尽管高聚物的胶束和纳米粒子作为药物的胶体载体已作厂泛研究，但是对其本身物理化学性质与应用之间的联系研究甚少。因此本文对一系列PLLA和PEG两嵌段和三嵌段共聚物的自聚集行为进行了细致研究，得到了以卜结论：1．以花为"模型药物"，通过荧光探针技术对一系列两亲性共聚物在水呀招夜和NaCI溶液种的胶束化行为进行了研究。这些共聚物是由一种新型氨钙催化利，以人分J，的聚乙二醇（PEG）为引发剂，引发丙交酷开环聚合得到，，其中囚定长度阴 PEG段分剐为44，104和113环氧乙烷早兀，PLLA的长没在15-280乳酸中元之间。由于氨钙准活性的特点，这些共聚物的分散度较低，均在1.1-1.3之间。其临界胶束浓度cmc发现随PLLA的含量增加I荆氏。具有同一PEG长度的两嵌段和三嵌段共聚物cmc值的截然差别为它们胶束的构型不同提供了证据。同时也发现了NaCI的加入对丫EG段和争LLA段较短洪聚物的cmc的降低有明掀笋作用，而对具有较长PEG段或较长PLLA段的共聚物的cmc基本上没有什么影响。2．通过荧光探余十技术测定花在这一系列共聚物胶束溶液锄勺配分系数在0.2*10~5至1.9*10~5之间，对于同-PEG段的共聚物，花在其胶柬相中的配分系数随PLLA的含量的增加而增加。另外发现NaCl的加入能够促进花在胶束相中的配分。3．通过透射电子显微镜研究了两嵌段共聚物水溶液胶束的形貌，发现胶束的粒径和分散度均随PLLA段的增加而增加：通过原子力显微镜研究"这些纳米粒子退火前后的形貌变化，发现退火后纳米粒子重新自聚集为类似于神经网络红脚乏的"纳米条带"结构，其中心为类似"神经元"的团簇结构，而周困为支化的车由突"分支结构，这与文献上提到的只有三嵌段共聚物能够形成支化的"纳米条带"结构截然不同，其自聚集机理在进，步研究之中。4．以亲水性的荧光素为荧光探针研究了两嵌段共聚物在甲苯中的胶束化行为，发现其clnc值随PLLA段的含量增加而降低，相对于PEG段，PLLA段在其胶宋化过程中起主要作用。通过1HNMR证明两嵌段共聚物在甲苯中的胶束具伯以PLLA段为"核"、PEG段为"壳"的"核-壳"结构，这种胶柬化行为通过溶解度参数的差异进行了解释。5.通过原子力显微镜发现，当这些胶束滴加在云母表面上经过热处理后，这些胶束重新自聚集成为规则的具有平缓隆起的纳米结构，这与由水中得到的胶柬热处理后的形貌截然不同，并对此进行了进一步解释。由XPS分析认为主要是PEG段覆盖在PLLA段表面。

有机／无机杂化材料的自组装表征及应用

杂化的纳米尺寸的有机／无机化合物开辟了材料科学的新纪元。作为新型功能材料，杂化的有机／无机杂化材料由于在光学、电子、机械、防护涂层、催化、传感器、生物等方面有潜在的应用前景而在材料科学领域引起广泛关注。杂多酸（POMs）作为一种重要的无机化合物，有特异的纳米尺寸结构，优越的物理化学性质和广泛应用价值，因此多酸化合物功能材料的研究引起人们足够的重视。最近，人们把更多的注意力集中到杂化的有机／无机杂化材料范围内，如何更有序的组装杂多酸，因为它们有着更有趣的电、磁、氧化还原和光学性质。1．在4-氨基苯甲酸修饰的玻碳电极表面，我们用层层组装方法制备了六钒取代的理杂多酸（PW6V6）多层膜。表面等离子（SP）技术和循环伏安（CV）法对多层膜进行了表征。结果表明，多层膜生长均匀，平均厚度为2.8nm，并且研究了多层膜对亚硝酸根伽02一）和浪酸根（BrO3-）的催化还原活性。2．研究了通过静电吸附作用，P2W17Fe和QPvP-Os交替组装多层膜。循环伏安（CV），电化学交流阻抗谱（EIS）和紫外一可见光谱（UV－vis）研究结果表明了这种多层膜是均一稳定的。多层膜对H2O2，BrO3-和NO2-有很高的催化活性。特别是EIS成功地监测多层膜的形成过程。随着层数增长，电子传输阻抗Rc，线性增加，氧化还原电对Fe（CN）63/4的电子传输受到抑制，这进一步证实了多层膜的均一性。3，首次在4-氨基苯甲酸修饰的玻碳电极表面成功地构建了含杂多酸P2W15V3的多层膜。值得注意的是，该多层膜对BrO3-和NO2-的还原有显著的电催化活性，而且由于过渡金属钒在P2W15V3起催化作用而有很低的过电位。另外，多层膜中QPVP-O5聚合物的Os中心在抗坏血酸氧化时的催化活性仍然存在，而且通过最外层的调整，多巴胺和抗坏血酸能被分别检测，所以在多巴胺存在时它可用作检测抗坏血酸的电化学传感器。4．迄今为止，人们把更多的注意力集中在杂多酸多层膜的制备，电化学和电催化活性的研究，对杂多酸多层膜功能材料的研究却很少，我们首次够构造了发光的杂多酸多层膜，紫外可见光谱，循环伏安，电化学阻抗技术和荧光光谱证明多层膜生长均匀，室温下，多层膜的发光性能显示Eu3+的特征发射峰是5D0→7Fj（j=1，2，3，4）的跃迁。电化学阻抗谱被成功得应用于监测多层膜的沉积过程。我们发现随多层膜的逐步形成，半圆直径有规律地长大。而且，电荷迁移电阻Rc，随双层数线性增长。可以认为多层膜在基底电极上以非常均匀规律的方式沉积，Fe（CN）63/4氧化还原电对的氧化还原反应逐步被多层膜抑制。5．我们用层层组装方法成功构造了金纳米粒子多层膜，紫外可见光谱，循环伏安和原子力显微技术表征了多层膜的形成，金纳米粒子粒径大约14nm，表面粗糙度6.43nm。

苯乙炔类分子导线的合成、组装及电子传输性能

分子导线作为未来分子电子器件的重要组成部分，其合成，组装及电子传输性能研究是当今化学、物理、生物和微电子工程等领域里一个非常热门的研究课题。本论文在齐聚苯乙炔及齐聚苯乙炔一唾吩乙炔分子导线的合成、组装及电子传输性能研究方面进行了一些工作，主要成果有以下几个方面：一、官能化短链分子导线的合成与表征比较系统地合成不同端基，不同分子长度和不同主链结构的乙酞琉基官能化的齐聚苯乙炔类分子导线，以便比较系统地研究各种因素对这类分子导线的自组装及电子传输性能的影响。对所有合成的官能化分子导线进行了红外光谱、核磁共振氢谱和质谱表征以确定其结构。二、长链分子导线的合成与表征用溶液和固定相快速合成方法合成了一系列苯乙炔齐聚物及苯乙炔一（蜜份乙炔交替共聚齐聚物：1）采用简便的路线，用溶液和固定相方法快速合成出十二烷氧基取代的苯乙炔齐聚物，最一长达到了八聚体。（2）采用一条最简便的路线，用固定相方法快速合成了异丙基取代的苯乙炔齐聚物，最长达到了八聚体。（3）用溶液和固定相方法首次合成了苯乙炔一唾吩乙炔交替共聚齐聚物。（4）用一种新颖的“现场去保护／偶联”二倍速方案快速合成出十二烷氧基取代的苯乙炔齐聚物，最长达到了八聚体。该方案最大的优点在于无需分离出对空气敏感的芳香端炔化合物，从而简化了实验操作以及提高了产物的纯度。对所有合成的齐聚物进行了红外光谱、核磁共振氢谱、核磁共振碳谱和激光质谱表征以确定其结构。三、官能化分子导线的组装及电子传输性能研究（l）用STM和CP-AFM研究了合成的官能化分子导线在金基底的自组装行为，发现形成的自组装单层缺陷很少，而且自组装单层非常均一。（2）用电化学和导电原子力显微镜技术研究了上述官能化齐聚苯乙炔分子导线的电子传输性能，发现界面接触和分子长度对分子导线的电子传导能力有很大的影响，而链结构的影响则相对要小些。此外，我们还发现齐聚苯乙炔体系的电子传输衰减系数β值仅为0.19A-1，说明它是一类性能优异的分子导线侯选物。（3）通过量子化学计算，我们对实验结果进行了初步解释。

一种简易的4.2K低温样品架及其应用

于2010-11-23批量导入

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.