978 resultados para Pulse compression


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For the first time to our knowledge, in a high-energy laser facility with an output energy of 454.37 J, by using a temporal-space-transforming pulse-shaping system with our own design of a knife-edge apparatus, we obtained a quasi-square laser pulse. (c) 2005 Optical Society of America.

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We introduce a four-pass laser pulse compressor design based on two grating apertures with two gratings per aperture that is tolerant to some alignment errors and, importantly, to grating-to-grating period variations. Each half-beam samples each grating in a diamond-shaped compressor that is symmetric about a central bisecting plane. For any given grating, the two half-beams impinge on opposite sides of its surface normal. It is shown that the two split beams have no pointing difference from paired gratings with different periods. Furthermore, no phase shift between half-beams is incurred as long as the planes containing a grating line and the surface normal for each grating of the pair are parallel. For grating pairs satisfying this condition, gratings surfaces need not be on the same plane, as changes in the gap between the two can compensate to bring the beams back in phase. © 2008 Optical Society of America.

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We propose to utilize the leading pulse of a petawatt class laser to create a conic plasma channel in the dense plasmas. This plasma channel could serve as a natural cone to guide the main pulse to the cone tip, as behaves similarly to the physical Au cone. We estimate that the leading pulse of a petawatt laser could create a natural cone with cone tip only about 100 mu m away from the edge of compressed core plasma. The natural cone formation should be compatible for a good uniform compression and efficient fast heating of the imploded fuel.

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In optical parametric chirped pulse amplification (OPCPA), the degradation of temporal contrast of the compressed signal pulse mainly results from spectral clipping in the grating stretcher with finite size of the optics, parametric fluorescence (PF) and the spectral variations transferred from temporal fluctuation of the pump pulse. The temporal contrast of the recompressed amplified pulse in the OPCPA system is studied numerically and a number of solutions are considered and optimized to achieve the highest temporal contrast.

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Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the ferntosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs. (C) 2004 Elsevier Ltd. All rights reserved.

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The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

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The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

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Formation of bumps in chalcogenide phase change thin films during the laser writing process is theoretically and experimentally investigated. The process involves basically fast heating and quenching stages. Circular bumps are formed after cooling, and the shape and size of the bumps depend on various parameters such as temperatures, laser power, beam size, laser pulse duration, etc. In extreme cases, holes are formed at the apex of the bumps. To understand the bumps and their formation is of great interest for data storage. In the present work, a theoretical model is established for the formation process, and the geometric characters of the formed bumps can be analytically and quantitatively evaluated from various parameters involved in the formation. Simulations based on the analytic solution are carried out taking Ag8In14Sb55Te23 as an example. The results are verified with experimental observations of the bumps. (C) 2008 American Institute of Physics.