THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES

A matrix analysis for free-space switching networks, such as perfect shuffle-exchange omega, crossover and Banyan is presented. On the basis of matrix analysis, the equivalence of these three switching networks and the route selection between input and output ports are simply explained. Furthermore, an optical crossover switching network, where MQW SEED arrays are used as electrically addressed four-function interchange nodes, is described and the optical crossover interconnection of 64 x 64, and high-speed four-function, interchange nodes is demonstrated in the experiment.

A COMMON-CAVITY 2-SECTION INGAASP/INP BISTABLE LASER WITH A LOW OPTICAL SWITCHING POWER

The characteristics of the steady-state and the transient response to external light excitation of a common-cavity two-section (CCTS) bistable semiconductor laser is investigated. The results on the relation of light output versus light input, the wavelength match, optical amplification and optical switching are presented. Experimental results are compared to the results of a computer simulation.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator

A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements，is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between －12 and －19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field

The polarization of vertical-cavity surface-emitting laser (VCSEL) can be controlled by electro-optic birefringence. We calculated the birefringence resulted from external electric field which was imposed on the top DBR of VCSEL by assuming that the two polarization modes were in the same place of the gain spectra in the absence of electric field beginning. By modifying SFM, the affection of the electric field strength on the polarization switching currents between the two polarization modes had been shown.

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

Reduction-Based Model Updating of a Scaled Offshore Platform Structure

This paper attempts to develop a reduction-based model updating technique for jacket offshore platform structure. A reduced model is used instead of the direct finite-element model of the real structure in order to circumvent such difficulties as huge degrees of freedom and incomplete experimental data that are usually civil engineers' trouble during the model updating. The whole process consists of three steps: reduction of FE model, the first model updating to minimize the reduction error, and the second model updating to minimize the modeling error of the reduced model and the real structure. According to the performance of jacket platforms, a local-rigidity assumption is employed to obtain the reduced model. The technique is applied in a downscale model of a four-legged offshore platform where its effectiveness is well proven. Furthermore, a comparison between the real structure and its numerical models in the following model validation shows that the updated models have good approximation to the real structure. Besides, some difficulties in the field of model updating are also discussed.

A high charge state all-permanent magnet ECR ion source for the IMP 320 kV HV platform

A 320 kV high voltage (HV) platform has been constructed at Institute of Modern Physics (IMP) to satisfy the increasing requirements of experimental studies in some heavy ion associated directions. A high charge state all-permanent magnet ECRIS-LAPECR2 has been designed and fabricated to provide intense multiple charge state ion beams (such as 1000 e mu A O6+, 16.7 e mu A Ar14+, 24 e mu A Xe27+, etc.) for the HV platform. LAPECR2 has a dimension of 0 650 mm x 560 mm. The powerful 3D magnetic confinement to the ECR plasma and the optimum designed magnetic field for the operation at 14.5 GHz makes it possible to obtain very good performances from this source. After a brief introduction of the ECRIS and accelerator development at IMP, the conceptual design of LAPECR2 source is presented. The first test results of this all-permanent magnet ECRIS are given in this paper.

Commissioning test of LAPECR2 source on the 320kV HV platform

The high charge state all permanent Electron Cyclotron Resonance Ion Source (ECRIS) LAPECR2 (Lanzhou All Permanent magnet ECR ion source No.2) has been successfully put on the 320kV HV platform at IMP and also has been connected with the successive LEBT system. This source is the largest and heaviest all permanent magnet ECRIS in the world. The maximum mirror field is 1.28T (without iron plug) and the effective plasma chamber volume is as large as circle divide 67mm x 255mm. It was designed to be operated at 14.5GHz and aimed to produce medium charge state and high charge state gaseous and also metallic ion beams. The source has already successfully delivered some intense gaseous ion beams to successive experimental terminals. This paper will give a brief overview of the basic features of this permanent magnet ECRIS. Then commissioning results of this source on the platform, the design of the extraction system together with the successive LEBT system will be presented.

Amplified electrochemical aptasensor taking AuNPs based sandwich sensing platform as a model

Here, we report a sensitive amplified electrochemical impedimetric aptasensor for thrombin, a kind of serine protease that plays important role in thrombosis and haemostasis. For improving detection sensitivity, a sandwich sensing platform is fabricated, in which the thiolated aptamers are firstly immobilized on a gold substrate to capture the thrombin molecules, and then the aptamer functionalized Au nanoparticles (AuNPs) are used to amplify the impedimetric signals.