Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.

用不对称的P/V操作设计并发算法

多线程并发是提高系统性能的常用手段,文章提出了一种用信号量的不对称P/V操作来设计多线程并发算法的新思路,这种思路适合于设计多线程同步程序以解决某些具有复杂同步语义要求的问题,而这些问题用传统的方法很难得到简洁高效的求解。为了演示这种新思路的特点和优点,笔者对几个常见问题(读写锁、排队锁和记录锁)给出了新的算法设计以及实现。实验数据表明,采用这种思路设计的算法在算法复杂度,读写速度和资源使用方面相对于传统的算法存在较大优势。

带V形隔热膜封闭空间内自然对流换热的数值研究

本文通过涡量-流函数法，对带V形隔热膜的平板型太阳能集热器二维封闭空间内自然对流进行了数值计算，定量分析了Rα、集热器倾角、V形膜开口角、H_v/H四个参数对换热的影响，为这种集热器的设计提供了依据。

V形隔热膜平板集热器性能的研究

本文报道了V形隔热膜平板集热器性能的理论与实验研究结果。在平板集热器的吸热板与盖板之间设置一层透明的V形膜能有效地抑制自然对流换热，提高集热效率。这种集热器性能好，造价低，适于推广应用。

Dressed multi-wave mixing in a V-type four-level atomic system

The dressed four- and six-wave mixings in a V-type four-level system are considered. Under two different dressed conditions, two- and three-photon resonant Autler-Townes splittings, accompanied by enhancement and suppression of wave mixing signal, are obtained analytically. Meanwhile, an electromagnetic induced transparency of multi-wave mixing is presented, which shows multiple peaks and asymmetric effects caused by one-photon, two-photon and three-photon resonances, separately. The slow light propagation multiple region of multi-wave mixing signal is also obtained.

Ti-V-Cr固溶体储氢合金的结构及电化学性能研究

本论文首先研究了Ni、Zr分别对Ti-V－Cr固溶体储氢合金中Cr和Ti部分取代的影响，得到了性能良好的Ti0．17Zr0．08V0．35Cr0．10Ni030基质合金。在此基础上进一步研究了入甄、B、Fe、Co、Al元素的添加或取代对基质合金的结构及电化学性能的影响。采用XRD、ICP、SEM一EDX、XPS、EIS、线性极化和阳极极化等表征手段对Ti一V－Cr固溶体储氢合金的结构及电化学性能进行分析和表征，主要结果如下：①Ti一V－Cr合金自身在碱性电解液中几乎无电化学活性。当用Ni部分取代Cr后，合金中出现具有电化学活性的第二相，其电化学性能得到有效地改善和提高。②Ti0.25-xZr_xV0.35Cr0.1Ni0.3（x＝0．05-0．15）合金主要是由bcc相和c14Laves相组成。随Zr含量从0．05增加到0．08，合金电极的放电容量和倍率放电能力增加；当x继续从0．08增加到0．15时，其变化较小。合金电极的电荷转移电阻随x增加而降低，当x在0．08到0．15之间变化时，电荷转移电阻变化也比较小。表明电荷转移电阻的大小与合金的电化学性能密切相关。③经过50次充、放电循环后，Tio．17zr"sV时scrol0Ni03。合金电极在303K和313K的放电容量能保持在90％以上；在70℃时的放电容量仍能达到275mA扮g。根据不同温度时的交换电流密度，计算了Ti。，17Zr008V时SCr川0Ni030合金电极表面电化学反应的表观活化能，其值约为50kJ／mol。④通过Nln、B、Fe、C。、AI对Tio．17zroosvo35Crol0Nio3。合金基质的添加与取代的研究，得到了具有高容量的储氢合金。其中Tio．17Zr008Vo35Cro．10Ni020Mnol。合金室温最高放电容量达到390n1A扮g；在253一343K的温度范围内，Tiol7Zr08V035Cr0JONioz5Mnoos合金具有高的放电容量，其容量在167一298mA树g之间变化，但是这些合金的稳定性有待进一步的提高。⑤合金充、放电过程中，晶格的扭曲和膨胀、Zr和V的溶解使得合金结构发生变化；合金的严重粉化及表面致密氧化膜的形成，是导致Ti一V－Cr合金电化学性能的衰减的主要原因。

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-delta doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. (C) 1994 American Institute of Physics.

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.

1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS

Longitudinal zone boundary X phonon frequencies have been calculated by a first principles pseudopotential method for III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. The phonon frequencies have been evaluated from total energy calculations in the frozen phonon approximation. The calculated phonon frequencies agree very well with the experimental values.