I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy.

Films of Ti-Si-N obtained by reactively sputtering a TiSi_2, a Ti_5Si_3, or a Ti_3Si target are either amorphous or nanocrystalline in structure. The atomic density of some films exceeds 10^23 at./cm^3. The room-temperature resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 hour decreases the resistivity of the Ti-rich films deposited from the Ti_5Si_3 or the Ti_3Si target, but increases that of the Si-rich films deposited from the TiSi_2 target when the nitrogen content exceeds about 30 at. %.

Ti_(34)Si_(23)N_(43) deposited from the Ti_5Si_3 target is an excellent diffusion barrier between Si and Cu. This film is a mixture of nanocrystalline TiN and amorphous SiN_x. Resistivity measurement from 80 K to 1073 K reveals that this film is electrically semiconductor-like as-deposited, and that it becomes metal-like after an hour annealing at 1000 °C in vacuum. A film of about 100 nm thick, with a resistivity of 660 µΩcm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C upon 30 min vacuum annealing. When used between Si and Al, the maximum temperature of stability is 550 °C for 30 min. This film can be etched in a CF_4/O_2 plasma.

The amorphous ternary metallic alloy Zr_(60)Al_(15)Ni_(25) was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering and cross-sectional transmission electron microscopy studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel is depleted from the oxide and enriched in the amorphous alloy below the oxide/alloy interface. The oxide layer thickness grows parabolically with the annealing duration, with a transport constant of 2.8x10^(-5) m^2/s x exp(-1.7 eV/kT). The oxidation rate is most likely controlled by the Ni diffusion in the amorphous alloy.

At later stages of the oxidation process, precipitates of nanocrystalline ZrO_2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy.

Estimativa do erro de discretização analítico na solução de equações diferenciais utilizando o Método de Volumes Finitos

As análises de erros são conduzidas antes de qualquer projeto a ser desenvolvido. A necessidade do conhecimento do comportamento do erro numérico em malhas estruturadas e não-estruturadas surge com o aumento do uso destas malhas nos métodos de discretização. Desta forma, o objetivo deste trabalho foi criar uma metodologia para analisar os erros de discretização gerados através do truncamento na Série de Taylor, aplicados às equações de Poisson e de Advecção-Difusão estacionárias uni e bidimensionais, utilizando-se o Método de Volumes Finitos em malhas do tipo Voronoi. A escolha dessas equações se dá devido a sua grande utilização em testes de novos modelos matemáticos e função de interpolação. Foram usados os esquemas Central Difference Scheme (CDS) e Upwind Difference Scheme(UDS) nos termos advectivos. Verificou-se a influência do tipo de condição de contorno e a posição do ponto gerador do volume na solução numérica. Os resultados analíticos foram confrontados com resultados experimentais para dois tipos de malhas de Voronoi, uma malha cartesiana e outra triangular comprovando a influência da forma do volume finito na solução numérica obtida. Foi percebido no estudo que a discretização usando o esquema CDS tem erros menores do que a discretização usando o esquema UDS conforme literatura. Também se percebe a diferença nos erros em volumes vizinhos nas malhas triangulares o que faz com que não se tenha uma uniformidade nos gráficos dos erros estudados. Percebeu-se que as malhas cartesianas com nó no centróide do volume tem menor erro de discretização do que malhas triangulares. Mas o uso deste tipo de malha depende da geometria do problema estudado

Energy inequalities and error estimates for axisymmetric torsion of thin elastic shells of revolution

The problem motivating this investigation is that of pure axisymmetric torsion of an elastic shell of revolution. The analysis is carried out within the framework of the three-dimensional linear theory of elastic equilibrium for homogeneous, isotropic solids. The objective is the rigorous estimation of errors involved in the use of approximations based on thin shell theory.

The underlying boundary value problem is one of Neumann type for a second order elliptic operator. A systematic procedure for constructing pointwise estimates for the solution and its first derivatives is given for a general class of second-order elliptic boundary-value problems which includes the torsion problem as a special case.

The method used here rests on the construction of “energy inequalities” and on the subsequent deduction of pointwise estimates from the energy inequalities. This method removes certain drawbacks characteristic of pointwise estimates derived in some investigations of related areas.

Special interest is directed towards thin shells of constant thickness. The method enables us to estimate the error involved in a stress analysis in which the exact solution is replaced by an approximate one, and thus provides us with a means of assessing the quality of approximate solutions for axisymmetric torsion of thin shells.

Finally, the results of the present study are applied to the stress analysis of a circular cylindrical shell, and the quality of stress estimates derived here and those from a previous related publication are discussed.

System error removal and structure optimization based on Fizeau interferometer

In the process of interferometric testing, the measurement result is influenced by the system structure, which reduces the measurement accuracy. To obtain an accurate test result, it is necessary to analyze the test system, and build the relationship between the measurement error and the system parameters. In this paper, the influences of the system elements which include the collimated lens and the standard surface on the interferometric testing are analyzed, the expressions of phase distribution and wavefront error on the detector are obtained, the method to remove some element errors is introduced, and the optimization structure relationships are given. (C) 2006 Elsevier GmbH. All rights reserved.

Effect of elliptical manufacture error of an axicon on the diffraction-free beam patterns

Based on the generalized Huygens-Fresnel diffraction integral theory and the stationary-phase method, we analyze the influence on diffraction-free beam patterns of an elliptical manufacture error in an axicon. The numerical simulation is compared with the beam patterns photographed by using a CCD camera. Theoretical simulation and experimental results indicate that the intensity of the central spot decreases with increasing elliptical manufacture defect and propagation distance. Meanwhile, the bright rings around the central spot are gradually split into four or more symmetrical bright spots. The experimental results fit the theoretical simulation very well. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

Aplicación de redes neuronales artificiales para la caracterización del error en trayectorias circulares por WEDM

El objeto del presente trabajo, titulado “Aplicación de redes neuronales artificiales para la caracterización del error en trayectorias circulares por WEDM”, es el estudio y posterior optimización del error en trayectorias circulares mecanizadas mediante electroerosión por hilo. Se pretende desarrollar un modelo predictivo de dicho error a través de la implementación de una Red Neuronal Artificial (RNA), que deberá ser alimentada con resultados empíricos resultantes de una batería de ensayos. El modelo desarrollado permitirá conocer a priori los errores que se producirán al cortar formas circulares en distintos espesores y con distintos radios sin necesidad de recurrir a costosas baterías de ensayos.