基于RS编码及网格编码调制的光PPM通信纠错技术

分析了RS（Reed-Solomon）纠错码和网格编码调制（Trellis Coded Modulation，TCM）技术在光脉冲位置调制通信中的应用．在此基础上，提出了以RS码作为外码，以网格编码调制技术作为内码，用于光脉冲位置调制通信的新编码方案，能以几乎不减少通信速率的优势，提高传统RS码系统在时变带限光信道中的通信性能．模拟研究了在不同空间光信道条件下，传统RS码的符号正确传输率和误码率，并对网格编码调制的编码增益、RS码与网格编码调制级联时的编码增益进行了仿真研究，证实了本方案的有效性．

激光尘埃粒子计数器微型光学传感器的研究

研制成功便携式激光尘埃粒子计数器的核心部件——微型光学传感器。该传感器采用直角散射光收集形式。以高功率半导体激光器作为光源，同时采用高性能的PIN型光电二极管作为光电探测器。散射光收集系统为单一大数值孔径的球面反射镜，其对粒子散射光的收集角范围从20°到160°。粒子散射光信号是脉冲信号，其频谱成份主要在高频段，所以在PIN型光电二极管后用一个带通式前置放大器来消除外界的低频噪声．根据米氏散射理论计算了该光学传感器的光散射响应特性，并用聚苯乙烯标准粒子实测了该光学传感器的性能。结果表明，该系统具有高的信噪

Characteristics of polypyrrole (PPy) nano-tubules made by templated ac electropolymerization

Electrochemical alternating current (ac) method designed for the synthesis of polypyrrole (PPy) nano-tubule arrays is the topic of this paper. Two-step anodic aluminum oxide (AAO) membrane is used as a template. The morphology of PPy nano-tubules is observed by SEM and discussed. FTIR spectra exhibit that the peaks of PPy nano-tubules shift compared to conventional PPy film. (c) 2005 Elsevier Ltd. All rights reserved.

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.

Puesta en marcha del nuevo cromatógrafo AC Reformulyzer M4 para la determinación de familias de hidrocarburos, oxigenados y benceno en gasolinas y naftas en refinería

El objetivo de este estudio es la puesta en marcha del cromatógrafo Analytical Control -Reformulyzer M4, destinado a la determinación de la composición de hidrocarburos, oxigenados y benceno en gasolinas y naftas de la refinería. Además, se trata de comprender la importancia del equipo en el marco industrial.