Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

窄线宽的外腔半导体激光器

介绍了使用闪耀光栅作为光反馈元件，与原始线宽大于1200GHz的半导体激光器构成的Littrow型外腔半导体激光器，极大地改善了激光器的性能。实验得到了功率恒定、模式单一稳定、线宽优于1．2MHz的激光输出，压窄线宽比为106，并针对Littrow型外腔结构提出了简洁、紧凑的复合型外腔方式。

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

中国裂叶苔科植物的研究-分类、区系和生态

裂叶苔科（Lophoziaceae）是叶苔目植物中的一个大科，其植物体形态变化较大，分类较为困难。中国在裂计佩一苔科下已记录的植物有23属、106种、2变种和2变形。本论文在大量文献考证和对国内外3000余份标本深入研究基础上，对中国裂仆佩一苔科进行了较系统全面的分类修订，记录了中国裂价卜苔科植物共有11属45种3变种1变形，提供了种属形态特征描述和41幅图版。发现中国新记录2种1变型：异瓣裂叶苔（Lophozia diversiloba Hatt），毛口挺叶苔（Anastrophyllum piligerm (Nees.) Steph.）和密叶三瓣苔小叶变形（Tritomaria quinquedentata fo. gracilis (Jens.) Schust.）；新组合名1个：小挺叶苔尖变种（Anastrophyllum minutum (Schreb. in Cranz.) Schust var. acuminatum (Horik.) Cao & Sun comb. nov.），还有省区新分布记录16个。采用聚类分析方法分析了裂叶苔科种属间的关系，结果支持广义裂汗卜苔属和挺口一卜苔属的概念。 区系成分的分析研究表明：中国裂计佩一苔科植物的地理成分主要以泛北极分布类型为主，占79.6%.东北地区、秦岭地区、西南地区和台湾省为我国裂p_佩一苔科植物种类最丰富的地区。在国内首次开展了苔类专科的生态学研究，并采用CCA方法对结果进行分析。研究表明：裂叶苔科植物在长白山分布上表现出明显的垂直地带性，可分为三类：（1)分布在2000米以上苔原带的种类，主要有小挺叶苔A. minutum、石生挺叶苔A. saxicola、密叶三瓣苔T. quinquedentata、高山裂叶苔L. sudetica，圆叶裂叶L. wenzelii；（2）分布在1730米到2000米苔岳桦林带的种类，主要有：方叶无褶苔L. bantriensis，细裂瓣苔B. barbata，阔瓣裂叶苔L. excisa；（3）分布在1150-1730米以下暗针叶林的种类，主要有：三瓣苔T. exsecta，多角胞三瓣苔T. exsectiformis、囊苞裂叶苔L. ventricosa，秃瓣裂叶苔L. obtusa和倾立裂叶苔L. ascendens。影响裂叶苔科植物分布的主要坏境因子是海拔高度。 对处于不同纬度三个地区的同种裂叶苔科植物的比较分析说明：随纬度的升高其分布的海拔高度逐步降低。