Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy

Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

Development of external electron-beam enhancement of the Penning ionization gauge ion source

To study the injection of additional electrons from an external electron gun into the plasma of a Penning ionization gauge (PIG) ion source, a test bench for the external electron-beam enhancement of the PIG (E-PIG) ion source was set up. A source magnet assembly was built to satisfy the request for magnetic field configuration of the E-PIG ion source. Numerical calculations have been done to optimize the magnetic field configuration so as to fit the primary electrons to be fed into the PIG discharge chamber along the spreading magnetic field lines. Many possible methods for improving the performance and stability of the PIG ion source have been used in the E-PIG ion source, including the use of multicrystal LaB6 cathode and optimized axial magnetic field. This article presents a detailed design of the E-PIG ion source. Substantial enhancement of ion charge state is expected to be observed which demonstrates that the E-PIG is a viable alternative to other much more costly and difficult to operate devices for the production of intense ion beams of higher charge state.

Effect of entrance-channel asymmetry on the isospin dependence of nucleon emission in heavy ion collisions

Using the isospin- and momentum-dependent hadronic transport model 1BUU04, we have investigated the influence of the entrance-channel isospin asymmetry on the sensitivity of the pre-equilibrium neutron/proton ratio to symmetry energy in central heavy-ion collisions induced by high-energy radioactive beams. Our analysis and discussion are based on the dynamical simulations of the three isotopic reaction Systems Sn-132+Sn-124, Sn-124+Sn-112 and Sn-112+(112)Su which are of the same total proton number but, different isospin asymmetry. We find that, the kinetic-energy distributions of the pre-equilibrium neutron/proton ratio are quite sensitive to the density-dependence of symmetry energy at incident beam energy E/A = 400 MeV, and the sensitivity increases as the isospin asymmetry of the reaction system increases.