Newly designed multilayer thin film mirror for dispersion compensation in Ti:sapphire femtosecond lasers

There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

Stress, absorptance and laser-induced damage threshold properties of 355-nm HR coatings

A number of 355-nm Al2O3/MgF2 high-reflectance (HR) coatings were prepared by electron-beam evaporation. The influences of the number of coating layers and deposition temperature on the 355-nm Al2O3/MgF2 HR coatings were investigated. The stress was measured by viewing the substrate deformation before and after coating deposition using an optical interferometer. The laser-induced damage threshold (LIDT) of the samples was measured by a 355-nm Nd:YAG laser with a pulse width of 8 ns. Transmittance and reflectance of the samples were measured by a Lambda 900 spectrometer. It was found that absorptance was the main reason to result in a low LIDT of 355-nm Al2O3/MgF2 HR coatings. The stress in Al2O3/MgF2 HR coatings played an unimportant role in the LIDT, although MgF2 is known to have high tensile stress.

Negative dispersion mirrors in Ta2O5/: SiO2 for femtosecond Ti : Sapphire lasers by using gires-tournois interferometers

We design and experimentally demonstrate some negative dispersion mirrors with optimized Gires-Tournois interferometers. The mirror structure is composed of 38 alternating Ta2O5 and SiO2 layers and could be regarded as two sections: high-reflectivity section consisting of a series of quarter-wavelength optical thickness stacks and negative-dispersion section consisting of only 13 layers. The designed mirrors exhibit the expected performance. These mirrors were fabricated by using ion beam sputtering. By adopting such mirrors, dispersion of a mode-locked femtosecond Ti:sapphire laser has been compensated for mostly. With two series of the mirrors, 32 fs and 15 fs pulses have been obtained respectively.

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

单晶硅材料的1064nmNd：YAG脉冲激光损伤特性研究

作为微电子和光电子系统中普遍使用的一种结构材料，单晶硅一直是人们研究的焦点。长期以来，人们对其电学性质进行了非常深入细致的研究，却疏于对其抗击强激光辐照特性的研究。随着激光通讯和光电对抗技术的发展，对光学材料的激光破坏特性和加固技术进行研究的需求也显得越来越迫切。本文主要对单晶硅的抗激光损伤特性进行研究，研究了单晶硅材料在1064nmNd：YAG激光自由脉冲输出模式和单脉冲输出模式作用下的损伤特性，通过对两种激光作用下单晶硅损伤形貌的分析，在热效应与热力耦合模型的基础上，对单晶硅的激光损伤机制进行了探索。

Laser-induced damage of Ta2O5/S1O2 narrow-band interference filters under different 1064 nm Nd : YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser. (c) 2005 Elsevier B.V. All rights reserved.

一种用于Yb：YAG激光器的波长分离膜的研制

以1030nm高反．940。980nm高透的波长分离膜作为实例，为提高该薄膜元件的波长分离效果，从膜系的优化方面做了一系列的研究。诸如采用带通滤光片的设计思想，在膜堆两侧加入了匹配层，调整膜堆的周期厚度，并用膜系设计软件对通带作进一步的优化。通过这一系列的优化设计后．利用RF双离子柬溅射工艺在BK7玻璃基底上沉积样品薄膜，并在基底背面加镀通带增透膜。结果显示，透射带在940和980nm处的透过率分别为97．73％和93．63％．反射带在1030nm的反射率为99．99％。对所制备的样品薄膜进行了激光损伤阈

Nd：YAG激光器光栅式扫描预处理的计算模拟与优化分析

采用计算模拟的方法．研究了光栅式扫描预处理的扫描方式以及脉冲能量波动、定位误差对预处理效率的影响。研究发现。脉冲能量波动及其定位误差使预处理效率降低，同时其影响与扫描方式之间存在相互调制作用．因此可以通过选择合适的扫描方式以及扫描间隔来优化预处理流程，提高预处理效率。此外发现，光斑呈等边三角形排列时的预处理效率优于正方形。

Investigação do efeito magnetocalórico convencional e anisotrópico no sistema Er(1-y)Ho(y)N

O efeito magnetocalórico, base da refrigeração magnética, é caracterizado por duas quantidades: a variação isotérmica da entropia (ΔST) e a variação adiabática da temperatura (ΔTad) as quais podem ser obtidas sob variações na intensidade de um campo magnético aplicado. Em sistemas que apresentam anisotropia magnética, pode‐se definir o efeito magnetocalórico anisotrópico, o qual, por definição, é calculado através da variação na direção de aplicação de um campo magnético cuja intensidade se mantém fixa. Nos materiais de nosso interesse, o efeito magnetocalórico é estudado teoricamente partindo de um hamiltoniano modelo que leva em conta a rede magnética (que pode ser composta por diversas sub-redes magnéticas acopladas), rede cristalina e a dinâmica dos elétrons de condução. No hamiltoniano magnético são consideradas as interações de troca, Zeeman e campo cristalino (esta ultima responsável pela anisotropia magnética). Recentemente, estudamos o efeito magnetocalórico convencional e o efeito magnetocalórico anisotrópico nos compostos mononitretos com terras-raras, a saber: Ho(y)Er(1-y)N para as concentrações y= 0,1,0.5 e 0.75. Comparações entre nossos resultados teóricos e os dados experimentais para o EMC foram bastante satisfatórias [3,9]. Além disso, diversas predições teóricas como a existência de uma fase ferrimagnética no sistema Ho(y)Er(1-y)N (para a concentração y=0.5) e reorientações de spin nas sub-redes do Ho e Er foram feitas [25].