Extrinsic Analog Synthesis using Piecewise Linear Current-Mode Circuits

A methodology is presented for the synthesis of analog circuits using piecewise linear (PWL) approximations. The function to be synthesized is divided into PWL segments such that each segment can be realized using elementary MOS current-mode programmable-gain circuits. A number of these elementary current-mode circuits when connected in parallel, it is possible to realize piecewise linear approximation of any arbitrary analog function with in the allowed approximation error bounds. Simulation results show a close agreement between the desired function and the synthesized output. The number of PWL segments used for approximation and hence the circuit area is determined by the required accuracy and the smoothness of the resulting function.

Current views on microscopic thermodynamics of liquid alloys

An attempt has been made to review current information on the microscopic thermodynamics of liquid alloys. For complex alloys, and for alloys of simple metals with strong "compound-forming" tendencies, the fluctuation approach developed by Bhatia and his co-workers provides a useful link between the fluctuation in concentration and number density of atoms in the mixture on the one hand, and macroscopic thermodynamic properties on the other. Some selected examples of the application of structural data of liquid alloys to estimating macroscopic thermodynamic properties such as the Gibbs free energy of mixing, coupled with the fluctuation approach are given. The relevant thermodynamic quantities such as vapor pressure and entropy are also discussed, to facilitate the understanding of the present status of the fundamental and powerful links between macroscopic and microscopic (atomic scale) structure of liquid alloys (Mg--Sn, Li--Pb, Hg--K). 63 ref.--AA

Alternating current conduction behavior of excimer laser ablated SrBi2Nb2O9 thin films

Bi-layered Aurivillius compounds prove to be efficient candidates of nonvolatile memories. SrBi2Nb2O9 thin films were deposited by excimer laser ablation at low substrate temperature (400 °C) followed by an ex situ annealing at 750 °C. The polarization hysteresis behavior was confirmed by variation of polarization with the external applied electric field and also verified with capacitance versus voltage characteristics. The measured values of spontaneous and remnant polarizations were, respectively, 9 and 6 μC/cm2 with a coercive field of 90 kV/cm. The measured dielectric constant and dissipation factors at 100 kHz were 220 and 0.02, respectively. The frequency analysis of dielectric and ac conduction properties showed a distribution of relaxation times due to the presence of multiple grain boundaries in the films. The values of activation energies from the dissipation factor and grain interior resistance were found to be 0.9 and 1.3 eV, respectively. The deviation in these values was attributed to the energetic conditions of the grain boundaries and bulk grains. The macroscopic relaxation phenomenon is controlled by the higher resistive component in a film, such as grain boundaries at lower temperatures, which was highlighted in the present article in close relation to interior grain relaxation and conduction properties.

Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films

A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole–Frenkel conduction mechanism.

Colossal electroresistance and current induced switching in ferromagnetic insulating state of La0.82Ca0.18MnO3

Colossal electroresistance and current induced resistivity switching have been measured in the ferromagnetic insulating (FMI) state of single crystal manganite La0.82Ca0.18MnO3. The sample has a Curie transition temperature TC = 165 K and the FMI state is realized for temperatures T<100 K. The electroresistance (ER), arising from a strong nonlinear resistivity, attains a large value ( ≈ 100%) in the FMI state. However, this is accompanied by a collapse of the magnetoresistance (MR) to a small value even in magnetic field (H) of 10 T. This demonstrates that the mechanisms that give rise to ER and MR are effectively decoupled.

Current‐limiting action of mixed‐phase BaTiO3 ceramic semiconductors

Stable and highly reproducible current‐limiting characteristics are observed for polycrystalline ceramics prepared by sintering mixtures of coarse‐grained, donor‐doped BaTiO3 (tetragonal) as the major phase and ultrafine, undoped cubic perovskite such as BaSnO3, BaZrO 3, SrTiO3, or BaTiO3 (cubic). The linear current‐voltage (I‐V) relation changes over to current limiting as the field strength increases, when thermal equilibrium is attained. The grain‐boundary layers with low donor and high Sn, Zr, or Sr have depleted charge carrier density as compared to that in the grain bulk. The voltage drop at the grain‐boundary layers diminishes the temperature gradient between the interior and surface regions.

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

Barium zirconium titanate [Ba(Zr0.05Ti0.95)O3, BZT] thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert’s theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

Study of symmetrical and related components through the theory of linear vector spaces

The paper proposes a study of symmetrical and related components, based on the theory of linear vector spaces. Using the concept of equivalence, the transformation matrixes of Clarke, Kimbark, Concordia, Boyajian and Koga are shown to be column equivalent to Fortescue's symmetrical-component transformation matrix. With a constraint on power, criteria are presented for the choice of bases for voltage and current vector spaces. In particular, it is shown that, for power invariance, either the same orthonormal (self-reciprocal) basis must be chosen for both voltage and current vector spaces, or the basis of one must be chosen to be reciprocal to that of the other. The original �¿, ��, 0 components of Clarke are modified to achieve power invariance. For machine analysis, it is shown that invariant transformations lead to reciprocal mutual inductances between the equivalent circuits. The relative merits of the various components are discussed.

Prebreakdown current measurements in vacuum gaps stressed by alternating voltages

A method has been suggested for the measurement of prebreakdown currents under a.c. conditions. Measurements were made using hemispherical stainless steel electrodes and currents from 10~3 A down to 10~7 A have been measured.

Determination of surge-diverter voltage/current characteristic

A mathematical model has been proposed to determine the voltage/current characteristic of the surge diverter for a wide range of currents of short duration of 8/20 and 4/10ÿs waveshapes. Experimental data agree well with the proposed model.

Determination of the follow current in surge diverters

Using a suitable mathematical model, computations of power/follow current in surge diverters (lightning arresters) have been made from the known short-circuit capacity of the power-frequency source and the nonlinear resistor characteristics. Also the effect of the initiation angle is studied. Typical verifications with the available data have been carried out. The influence of arc drop in the surge-diverter spark gap is neglected.

Active current and potential transducers

This paper advocates the use of active current and potential transducers for proper utilisation of fast protective relays. The active current transducer faithfully transforms the primary current containing a slowly decaying d.c. component, thereby providing a good transient response. The active potential transducer helps in fast extinction of ferroresonance oscillations. Results oflaboratory investigations are also presented.