Radio over free space optical link using a directly modulated two-electrode high power tapered laser

The analog modulation performance of a high-power two-electrode tapered laser is investigated. A 25dB dynamic range for 2.4GHz 802.11g signals is achieved with a 26dB loss budget, showing a >1km free space range is possible. © 2010 Optical Society of America.

Experimental evaluation of layout designs for 3 × 3 MIMO-enabled radio-over-fiber distributed antenna systems

This paper experimentally demonstrates that, for two representative indoor distributed antenna system (DAS) scenarios, existing radio-over-fiber (RoF) DAS installations can enhance the capacity advantages of broadband 3 × 3 multiple-input-multiple-output (MIMO) radio services without requiring additional fibers or multiplexing schemes. This is true for both single-and multiple-user cases with a single base station and multiple base stations. First, a theoretical example is used to illustrate that there is a negligible improvement in signal-to-noise ratio (SNR) when using a MIMO DAS with all N spatial streams replicated at N RAUs, compared with a MIMO DAS with only one of the N streams replicated at each RAU for N ≤ 4. It is then experimentally confirmed that a 3 × 3 MIMO DAS offers improved capacity and throughput compared with a 3 × 3 MIMO collocated antenna system (CAS) for the single-user case in two typical indoor DAS scenarios, i.e., one with significant line-of-sight (LOS) propagation and the other with entirely non-line-of-sight (NLOS) propagation. The improvement in capacity is 3.2% and 4.1%, respectively. Then, experimental channel measurements confirm that there is a negligible capacity increase in the 3 × 3 configuration with three spatial streams per antenna unit over the 3 × 3 configuration with a single spatial stream per antenna unit. The former layout is observed to provide an increase of ∼1% in the median channel capacity in both the single-and multiple-user scenarios. With 20 users and three base stations, a MIMO DAS using the latter layout offers median aggregate capacities of 259 and 233 bit/s/Hz for the LOS and NLOS scenarios, respectively. It is concluded that DAS installations can further enhance the capacity offered to multiple users by multiple 3 × 3 MIMO-enabled base stations. Further, designing future DAS systems to support broadband 3 × 3 MIMO systems may not require significant upgrades to existing installations for small numbers of spatial streams. © 2013 IEEE.

Characterisation of different commercial reactive magnesia

Reactive magnesia (MgO) has emerged as an essential component in a new family of cements with significantly superior technical and environmental performance over Portland cement. The physical characteristics of different reactive magnesia, which are likely to affect their engineering performance, vary considerably depending on their origin and manufacturing processes. To appropriately utilise such a material, it is essential to develop a better understanding of the characteristics of different magnesia from various sources. In this study, the detailed characterisation of 14 commercial magnesia in terms of reactivity, textural properties, X-ray diffraction pattern, pH value and hydration behaviour and morphology is presented and correlation between them is developed. Relationships were developed between the reactivity, specific surface area, agglomeration ratio and hydration rate based on the experimental observations. As a result, the reactive magnesia used in this study were grouped into three categories and their characteristics and anticipated performances in different applications were discussed.

Silicon avalanche photodiodes for low cost, high loss short wavelength radio over fiber links

An APD is shown to improve the noise figure of a lossy optical link compared to a PIN-TIA combination of equivalent gain. Transmission of IEEE 802.11g WLAN signals is demonstrated with 18dB optical link loss. © 2009 Optical Society of America.

The industrial emergence of commercial inkjet printing

Purpose: The purpose of this paper is to investigate how supply and demand interact during industrial emergence. Design/methodology/approach: The paper builds on previous theorising about co-evolutionary dynamics, exploring the interaction between supply and demand in a study of the industrial emergence of the commercial inkjet cluster in Cambridge, UK. Data are collected through 13 interviews with professionals working in the industry. Findings: The paper shows that as new industries emerge, asynchronies between technology supply and market demand create opportunities for entrepreneurial activity. In attempting to match innovative technologies to particular applications, entrepreneurs adapt to the system conditions and shape the environment to their own advantage. Firms that successfully operate in emerging industries demonstrate the functionality of new technologies, reducing uncertainty and increasing customer receptiveness. Research limitations/implications: The research is geographically bounded to the Cambridge commercial inkjet cluster. Further studies could consider commercial inkjet from a global perspective or test the applicability of the findings in other industries. Practical implications: Technology-based firms are often innovating during periods of industrial emergence. The insights developed in this paper help such firms recognise the emerging context in which they operate and the challenges that need to overcome. Originality/value: As an in depth study of a single industry, this research responds to calls for studies into industrial emergence, providing insights into how supply and demand interact during this phase of the industry lifecycle. © Emerald Group Publishing Limited.

Fiber Dispersion and Nonlinearity Influences on Transmissions of AM and FM Data Modulation Signals in Radio-Over-Fiber System

Transmission properties of data amplitude modulation (AM) and frequency modulation (FM) in radio-over-fiber (RoF) system are studied numerically. The influences of fiber dispersion and nonlinearity on different microwave modulation schemes, including double side band (DSB), single side band (SSB) and optical carrier suppression (OCS), are investigated and compared. The power penalties at the base station (BS) and the eye opening penalties of the recovered data at the end users are both calculated and analyzed. Numerical simulation results reveal that the power penalty of FM can be drastically decreased due to the larger modulation depth it can achieve than that of AM. The local spectrum broadening around subcarrier microwave frequency of AM due to fiber nonlinearity can also be eliminated with FM. It is demonstrated for the first time that the eye openings of the FM recovered data can be controlled by its modulation depths and the coding formats. Negative voltage encoding format was used to further decrease the RF frequency thus increase the fluctuation period considering their inverse relationship.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

A novel technique for predicting ionizing radiation effects of commercial MOS devices

A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET

This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

High-power electroabsorption modulator for radio over fibre system

An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.

p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering

Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.