Model systems for the study of drug hypersensitivity

I. It was not possible to produce anti-tetracycline antibody in laboratory animals by any of the methods tried. Tetracycline protein conjugates were prepared and characterized. It was shown that previous reports of the detection of anti-tetracycline antibody by in vitro-methods were in error. Tetracycline precipitates non-specifically with serum proteins. The anaphylactic reaction reported was the result of misinterpretation, since the observations were inconsistent with the known mechanism of anaphylaxis and the supposed antibody would not sensitize guinea pig skin. The hemagglutination reaction was not reproducible and was extremely sensitive to minute amounts of microbial contamination. Both free tetracyclines and the conjugates were found to be poor antigens.

II. Anti-aspiryl antibodies were produced in rabbits using 3 protein carriers. The method of inhibition of precipitation was used to determine the specificity of the antibody produced. ε-Aminocaproate was found to be the most effective inhibitor of the haptens tested, indicating that the combining hapten of the protein is ε-aspiryl-lysyl. Free aspirin and salicylates were poor inhibitors and did not combine with the antibody to a significant extent. The ortho group was found to participate in the binding to antibody. The average binding constants were measured.

Normal rabbit serum was acetylated by aspirin under in vitro conditions, which are similar to physiological conditions. The extent of acetylation was determined by immunochemical tests. The acetylated serum proteins were shown to be potent antigens in rabbits. It was also shown that aspiryl proteins were partially acetylated. The relation of these results to human aspirin intolerance is discussed.

III. Aspirin did not induce contact sensitivity in guinea pigs when they were immunized by techniques that induce sensitivity with other reactive compounds. The acetylation mechanism is not relevant to this type of hypersensitivity, since sensitivity is not produced by potent acetylating agents like acetyl chloride and acetic anhydride. Aspiryl chloride, a totally artificial system, is a good sensitizer. Its specificity was examined.

IV. Protein conjugates were prepared with p-aminosalicylic acid and various carriers using azo, carbodiimide and mixed anhydride coupling. These antigens were injected into rabbits and guinea pigs and no anti-hapten IgG or IgM response was obtained. Delayed hypersensitivity was produced in guinea pigs by immunization with the conjugates, and its specificity was determined. Guinea pigs were not sensitized by either injections or topical application of p-amino-salicylic acid or p-aminosalicylate.

Polaron hopping in olivine phosphates studied by nuclear resonant scattering

Valence fluctuations of Fe²⁺ and Fe³⁺ were studied in a solid solution of Li_xFePO₄ by nuclear resonant forward scattering of synchrotron x rays while the sample was heated in a diamond-anvil pressure cell. The spectra acquired at different temperatures and pressures were analyzed for the frequencies of valence changes using the Blume-Tjon model of a system with a fluctuating Hamil- tonian. These frequencies were analyzed to obtain activation energies and an activation volume for polaron hopping. There was a large suppression of hopping frequency with pressure, giving an anomalously large activation volume. This large, positive value is typical of ion diffusion, which indicates correlated motions of polarons, and Li⁺ ions that alter the dynamics of both.

In a parallel study of Na_xFePO₄, the interplay between sodium ordering and electron mobility was investigated using a combination of synchrotron x-ray diffraction and nuclear resonant scattering. Conventional Mossbauer spectra were collected while the sample was heated in a resistive furnace. An analysis of the temperature evolution of the spectral shapes was used to identify the onset of fast electron hopping and determine the polaron hopping rate. Synchrotron x-ray diffraction measurements were carried out in the same temperature range. Reitveld analysis of the diffraction patterns was used to determine the temperature of sodium redistribution on the lattice. The diffraction analysis also provides new information about the phase stability of the system. The temperature evolution of the iron site occupancies from the Mossbauer measurements, combined with the synchrotron diffraction results give strong evidence for a relationship between the onset of fast electron dynamics and the redistribution of sodium in the lattice.

Measurements of activation barriers for polaron hopping gave fundamental insights about the correlation between electronic carriers and mobile ions. This work established that polaron-ion interactions can alter the local dynamics of electron and ion transport. These types of coupled processes may be common in many materials used for battery electrodes, and new details concerning the influence of polaron-ion interactions on the charge dynamics are relevant to optimizing their electrochemical performance.

Photoelectrochemistry of GaAs and Si liquid junctions

A quantitative study has been performed on the stability of GaAs surfaces in a 0.10 M K₂Se-0.01 M K₂Se₂ aqueous solution. In this electrolyte, n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se^2-. Chemisorption of group VIIIB metal ions onto the GaAs surfaces yielded improved current-voltage behavior of the GaAs photoanodes, and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se^2- species. Related experiments on n-GaAs, pGaAs, and Sn-doped In₂O₃ electrodes in Te^2-/- aqueous solutions have also been performed.

The majority carrier (electrons) transfer rate constant at a highly doped n⁺-Si/Co(Cp)₂Cl-methanol junction has been measured directly using the chronoamperometry electrochemical technique. The reduction reaction rate of Co(Cp)₂+ was 0.03 cm-s^-1 at the Si electrode, and was more than 100 times slower than at a hanging mercury electrode. The slower rate was attributed to the smaller optical and static dielectric constants, and the lower density of electrons of the semiconductor. The experimental results were compared to the Marcus theory of charge transfer.

The unique properties of high purity Si/liquid junctions have been investigated under illumination conditions in which the photogenerated carrier concentration exceeds the dopant concentration. Under these high injection conditions, negligible electric fields exist at the semiconductor/liquid interface, and carrier motion is driven by diffusion. Studies of the current-voltage properties of the Si in methanol solutions containing various redox couples suggested that high efficiency photoelectrochemical cells could be established through selective collection of carriers at the semiconductor/liquid junction. The quasi-Fermi levels of electrons and holes were measured directly against the solution potential. Steady-state and transient photovoltage measurements, and theoretical modeliug of the carrier transport, generation, and recombination dynamics indicated that the quasi-Fermi levels were flat across the semiconductor sample. The recombination velocities at the Si/liquid junctions have also been measured, and were shown to vary with the solution potential following the Shockley-Read-Hall theory on recombination.

I. Electronic processes in α-sulfur. II. Polaron motion in a D.C. electric field

Part I: The mobilities of photo-generated electrons and holes in orthorhombic sulfur are determined by drift mobility techniques. At room temperature electron mobilities between 0.4 cm²/V-sec and 4.8 cm²/V-sec and hole mobilities of about 5.0 cm²/V-sec are reported. The temperature dependence of the electron mobility is attributed to a level of traps whose effective depth is about 0.12 eV. This value is further supported by both the voltage dependence of the space-charge-limited, D.C. photocurrents and the photocurrent versus photon energy measurements.

As the field is increased from 10 kV/cm to 30 kV/cm a second mechanism for electron transport becomes appreciable and eventually dominates. Evidence that this is due to impurity band conduction at an appreciably lower mobility (4.10^-4 cm²/V-sec) is presented. No low mobility hole current could be detected. When fields exceeding 30 kV/cm for electron transport and 35 kV/cm for hole transport are applied, avalanche phenomena are observed. The results obtained are consistent with recent energy gap studies in sulfur.

The theory of the transport of photo-generated carriers is modified to include the case of appreciable thermos-regeneration from the traps in one transit time.

Part II: An explicit formula for the electric field E necessary to accelerate an electron to a steady-state velocity v in a polarizable crystal at arbitrary temperature is determined via two methods utilizing Feynman Path Integrals. No approximation is made regarding the magnitude of the velocity or the strength of the field. However, the actual electron-lattice Coulombic interaction is approximated by a distribution of harmonic oscillator potentials. One may be able to find the “best possible” distribution of oscillators using a variational principle, but we have not been able to find the expected criterion. However, our result is relatively insensitive to the actual distribution of oscillators used, and our E-v relationship exhibits the physical behavior expected for the polaron. Threshold fields for ejecting the electron for the polaron state are calculated for several substances using numerical results for a simple oscillator distribution.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Thermodynamic and kinetic behavior of an argon plasma jet. Decomposition of nitric oxide between 1300 - 1750 degrees K in an argon plasma

In the first part of the study, an RF coupled, atmospheric pressure, laminar plasma jet of argon was investigated for thermodynamic equilibrium and some rate processes.

Improved values of transition probabilities for 17 lines of argon I were developed from known values for 7 lines. The effect of inhomogeneity of the source was pointed out.

The temperatures, T, and the electron densities, n_e , were determined spectroscopically from the population densities of the higher excited states assuming the Saha-Boltzmann relationship to be valid for these states. The axial velocities, v_z, were measured by tracing the paths of particles of boron nitride using a three-dimentional mapping technique. The above quantities varied in the following ranges: 10¹² ˂ n_e ˂ 10¹⁵ particles/cm³, 3500 ˂ T ˂ 11000 °K, and 200 ˂ v_z ˂ 1200 cm/sec.

The absence of excitation equilibrium for the lower excitation population including the ground state under certain conditions of T and n_e was established and the departure from equilibrium was examined quantitatively. The ground state was shown to be highly underpopulated for the decaying plasma.

Rates of recombination between electrons and ions were obtained by solving the steady-state equation of continuity for electrons. The observed rates were consistent with a dissociative-molecular ion mechanism with a steady-state assumption for the molecular ions.

In the second part of the study, decomposition of NO was studied in the plasma at lower temperatures. The mole fractions of NO denoted by x_NO were determined gas-chromatographically and varied between 0.0012 ˂ x_NO ˂ 0.0055. The temperatures were measured pyrometrically and varied between 1300 ˂ T ˂ 1750°K. The observed rates of decomposition were orders of magnitude greater than those obtained by the previous workers under purely thermal reaction conditions. The overall activation energy was about 9 kcal/g mol which was considerably lower than the value under thermal conditions. The effect of excess nitrogen was to reduce the rate of decomposition of NO and to increase the order of the reaction with respect to NO from 1.33 to 1.85. The observed rates were consistent with a chain mechanism in which atomic nitrogen and oxygen act as chain carriers. The increased rates of decomposition and the reduced activation energy in the presence of the plasma could be explained on the basis of the observed large amount of atomic nitrogen which was probably formed as the result of reactions between excited atoms and ions of argon and the molecular nitrogen.

Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO3

The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO3 is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect. (c) 2008 American Institute of Physics.

Paths Towards High Efficiency Silicon Photovoltaics

While photovoltaics hold much promise as a sustainable electricity source, continued cost reduction is necessary to continue the current growth in deployment. A promising path to continuing to reduce total system cost is by increasing device efficiency. This thesis explores several silicon-based photovoltaic technologies with the potential to reach high power conversion efficiencies. Silicon microwire arrays, formed by joining millions of micron diameter wires together, were developed as a low cost, low efficiency solar technology. The feasibility of transitioning this to a high efficiency technology was explored. In order to achieve high efficiency, high quality silicon material must be used. Lifetimes and diffusion lengths in these wires were measured and the action of various surface passivation treatments studied. While long lifetimes were not achieved, strong inversion at the silicon / hydrofluoric acid interface was measured, which is important for understanding a common measurement used in solar materials characterization.

Cryogenic deep reactive ion etching was then explored as a method for fabricating high quality wires and improved lifetimes were measured. As another way to reach high efficiency, growth of silicon-germanium alloy wires was explored as a substrate for a III-V on Si tandem device. Patterned arrays of wires with up to 12% germanium incorporation were grown. This alloy is more closely lattice matched to GaP than silicon and allows for improvements in III-V integration on silicon.

Heterojunctions of silicon are another promising path towards achieving high efficiency devices. The GaP/Si heterointerface and properties of GaP grown on silicon were studied. Additionally, a substrate removal process was developed which allows the formation of high quality free standing GaP films and has wide applications in the field of optics.

Finally, the effect of defects at the interface of the amorphous silicon heterojuction cell was studied. Excellent voltages, and thus efficiencies, are achievable with this system, but the voltage is very sensitive to growth conditions. We directly measured lateral transport lengths at the heterointerface on the order of tens to hundreds of microns, which allows carriers to travel towards any defects that are present and recombine. This measurement adds to the understanding of these types of high efficiency devices and may aid in future device design.

I. Fundamental limitations in microelectronics. II. Power Schottky diode design and comparison with the junction diode. III. Permittivity of strontium titanate

Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.

波片相位延迟的精确测量及影响因素分析

提出一种精确测量波片相位延迟的方法。将待测波片置于起偏器和检偏器之间,转动待测波片和检偏器至不同的位置并探测输出的光强,得到波片的相位延迟。采用光源调制技术和解调技术,抑制了连续光所无法克服的背景光干扰和电子噪声的干扰;将光路分为测量光路和参考光路,采用软件除法技术,消除了光源波动的影响,从而实现波片相位延迟的精确测量。详细分析了影响测量精度的误差因素,主要有光源波长变化、温度变化、入射角倾斜、转台转角误差和光源波动,计算了1064 nm波长时厚度为0.52 mm的λ/4多级结晶石英波片产生的相位延迟误差

Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

The femtosecond pump-probe technique was used to study the carrier dynamics of amorphous Ge2Sb2Te5 films. With carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. On the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. The relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). A possible interpretation of the relaxation processes is elucidated. In the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. It is followed by a recombination process of trapped carriers at later delay time. (c) 2007 American Institute of Physics.

Avaliação da eficácia da desinfecção de instrumentos usados durante o período transoperatório do tratamento endodôntico

Esta investigação objetivou a eficácia antimicrobiana de agentes desinfetantes utilizados na desinfecção dos instrumentos endodônticos, durante o período transoperatório do tratamento endodôntico. A atividade antimicrobiana dos desinfetantes álcool isopropílico, acetona e ácido peracético (PAA) foi avaliada sobre microrganismos planctônicos através de teste de contato (time kill assay), utilizando inóculo de 9,9 X 109 a 1,2 X 1012 unidades formadoras de colônia (UFC) e por determinação da concentração bactericida mínima (CBM), usando inóculo de aproximadamente 106 UFC. Os agentes químicos também foram avaliados sobre Enterococcus faecalis (E. faecalis) ATCC 29212 cultivada em matriz de dentina (ex vivo) visando a formação de biofilme. O biofilme (organismos sésseis) microbiano foi removido com limas tipo Kerr (LK), até as lâminas estarem visualmente preenchidas. As LK contaminadas foram usadas como carreadores (logo após a contaminação ou secas dentro de uma câmara de fluxo laminar por 10 minutos). As LK carreadoras foram imersas em álcool isopropílico ou acetona ambos a 80%, ou em Ácido peracético 2%, por 30 ou 60 segundos. As limas foram posteriormente colocadas em tubos de ensaio contendo caldo Enterococcosel para observar o crescimento dos enterococos viáveis. Depois, os experimentos in vivo foram realizados com LK contaminadas por material necrótico pulpar da região cervical de dentes indicados para tratamento endodôntico. As LK contaminadas foram imersas, por 30 ou 60 segundos, em 80% de acetona ou 80% de álcool isopropílico ou 2% de PAA. As limas foram então inoculadas em tubos de ensaio contendo meio tioglicolato. Os organismos que cresceram, foram identificados após o tratamento com PAA. A corrosão mediada pelos agentes químicos também foi testada, após a incubação de LK de aço inoxidável e de NiTi por 60 minutos, medindo o peso das LK antes e depois da imersão e por microscopia eletrônica de varredura (MEV). Todos os agentes químicos foram capazes de eliminar ou reduzir a viabilidade das bactérias de espécies planctônicas Gram-negativas e Gram-positivas, embora a atividade dos produtos químicos sobre E. faecalis sésseis em testes de carreadores de LK demonstrou que o álcool isopropílico ou acetona foram incapazes de eliminar a contaminação bacteriana, especialmente, quando as limas foram secas previamente à exposição aos produtos químicos, por 15 ou 30 segundos. O PAA demonstrou a melhor atividade antimicrobiana e eliminou a viabilidade das células sésseis E. faecalis de ambas as limas endodônticas tipo K úmidas ou secas, após exposição por 15 segundos (100% de eliminação). Os experimentos desenvolvidos in vivo demonstraram que o PAA foi o agente mais eficaz (p<0,05), capaz de eliminar a viabilidade dos organismos em 92% das LK imersas depois de 60 segundos, quando comparado com acetona (64%) ou com álcool isopropílico (50%). O crescimento microbiano após o contato com o PAA demonstrou que somente o grupo dos Lactobacillus sp foi resistente a essa substância química. Os agentes químicos não demonstraram ser corrosivos, após a imersão por 1 hora, tanto por pesagem quanto por MEV. Foi observado que o PAA foi o agente mais eficaz para ser utilizado como desinfetante de instrumentos, durante o período transoperatório do tratamento endodôntico.

Acoustic plasmons in extrinsic free-standing graphene

An acoustic plasmon is predicted to occur, in addition to the conventional two-dimensional (2D) plasmon, as the collective motion of a system of two types of electronic carriers coexisting in the same 2D band of extrinsic (doped or gated) graphene. The origin of this novel mode stems from the anisotropy present in the graphene band structure near the Dirac points K and K'. This anisotropy allows for the coexistence of carriers moving with two distinct Fermi velocities along the Gamma K and Gamma K' directions, which leads to two modes of collective oscillation: one mode in which the two types of carriers oscillate in phase with one another (this is the conventional 2D graphene plasmon, which at long wavelengths (q -> 0) has the same dispersion, q(1/2), as the conventional 2D plasmon of a 2D free electron gas), and the other mode found here corresponds to a low-frequency acoustic oscillation (whose energy exhibits at long-wavelengths a linear dependence on the 2D wavenumber q) in which the two types of carriers oscillate out of phase. This prediction represents a realization of acoustic

Navegantes e surfistas: as curvaturas do ciberespaço nas vizinhanças dos portais

De um território livre, construído em torno dos princípios da liberdade e da colaboração um ambiente onde pode ser exercida a liberdade de ser (ou parecer), de dizer (ou escrever) e de ouvir (ou ler), para o bem ou para o mal, a massificação do uso da Internet tem constituído um espaço social (virtual) contraditório e diversificado, onde forças cuja vocação parece ser homogeneizar (e possivelmente pasteurizar) esse território livre da diferença têm sido postas em cena. Dentre essas forças, lugar especial é ocupado pelo que se convencionou chamar portais de interesse geral. Tais sites, ao procurar responder a diferentes interesses, de modo a assegurar que o máximo possível de anseios de seus usuários seja satisfeito sem a necessidade de navegarem para fora dos seus domínios, são construídos como empreendimentos cujo sucesso requer o controle do comportamento de navegação dos usuários o que, neste caso, não pode ser feito senão através do discurso (persuasivo). A hipótese que salta aos olhos é evidente: e se este não for apenas um controle pelo discurso, mas um controle do discurso? A premissa é, evidentemente, que tais sites constituem uma categoria especial de artefatos de linguagem produzidos no interior de eventos comunicativos bem determinados, isto é, um gênero emergente do discurso. Assim, o objetivo primário da presente pesquisa consistiu em determinar como o modo de funcionamento discursivo do portal contribui para afetar os hábitos de navegação dos seus usuários, curvando e distorcendo o ciberespaço nas suas vizinhanças. Para isso procuramos abordar o que chamamos atratores retóricos, isto é, aquelas estratégias (discursivas) destinadas a seduzir, convencer ou mesmo fraudar os usuários de modo a assegurar sua permanência na órbita dos portais, fazendo desses websites vetores da ordem do discurso, um elemento de controle do caos típico do ciberespaço, um agente de exorcismo da diferença e subjugação do discurso desenfreado.

Análise da função diastólica em mulheres medicadas com antraciclínicos no tratamento do câncer de mama

O Câncer de mama é um dos problemas de saúde pública mais importantes em nosso país. São estimados, para 2010, 49.400 novos casos de câncer de mama no Brasil, com um risco estimado de 51 casos a cada 100 mil mulheres. A estratégia de tratamento das pacientes com tumores de mama pode passar pelo uso de quimioterapia. A doxorrubicina é uma das drogas mais ativas para o câncer de mama, pertencendo ao grupo das antraciclinas. A família das antraciclinas apresenta como efeito colateral dano ao miocárdio que pode chegar a 36% dependendo da dose utilizada. O efeito sobre o miocárdio costuma ocorrer mais comumente durante ou logo após o último ciclo de quimioterapia podendo, entretanto ocorrer após vários anos do último ciclo de quimioterapia. O objetivo deste estudo foi analisar as alterações da função diastólica ventricular esquerda em mulheres usuárias de antraciclínicos no tratamento do câncer de mama. Realizamos um estudo prospectivo, em uma coorte de mulheres entre 18 e 69 anos, com câncer de mama e indicação de quimioterapia com doxorrubicina. Acompanhamos por período não inferior a 18 meses um grupo de 38 pacientes que cumpriram os critérios de elegibilidade. A dose de doxorrubicina utilizada variou de 50 a 60 mg/m/SC. Todos os pacientes são do sexo feminino, e portadores do tipo histológico carcinoma ductal infiltrante. Duas pacientes faleceram durante o estudo, de causa não cardíaca. Em nossa avaliação, ao final do estudo observamos que os parâmetros: dimensões do átrio esquerdo, dimensões do ventrículo esquerdo na diástole, dimensões do ventrículo esquerdo na sístole, velocidade da onda E, relação da fase de enchimento rápido pela sístole atrial, velocidade diastólica tardia do anel mitral, velocidade diastólica precoce do anel mitral, tempo de desaceleração e a relação da velocidade de enchimento rápido precoce de VE pela velocidade diastólica precoce do anel mitral demonstraram serem parâmetros de grande utilidade para seguimento da lesão cardíaca por antraciclínicos. Já o que não ocorreu com: a fração de encurtamento, fração de ejeção, volume do AE, volume do AE corrigido pela superfície corporal, velocidade diastólica tardia, tempo de relaxamento isovolumétrico, velocidade sistólica do anel mitral, que não apresentaram alterações significativas neste estudo. A análise da função diastólica utilizando o ecocardiograma mostrou ser um método eficaz, que em conjunto com a da função sistólica possibilita detectar precocemente o possível dano miocárdico, oriundo ao uso da quimioterapia com antraciclínicos, favorecendo uma intervenção terapêutica precoce e adequada.