Wastewater Electrolysis Cell for Environmental Pollutants Degradation and Molecular Hydrogen Generation

This study proposes a wastewater electrolysis cell (WEC) for on-site treatment of human waste coupled with decentralized molecular H₂ production. The core of the WEC includes mixed metal oxides anodes functionalized with bismuth doped TiO₂ (BiO_x/TiO₂). The BiO_x/TiO₂ anode shows reliable electro-catalytic activity to oxidize Cl- to reactive chlorine species (RCS), which degrades environmental pollutants including chemical oxygen demand (COD), protein, NH4⁺, urea, and total coliforms. The WEC experiments for treatment of various kinds of synthetic and real wastewater demonstrate sufficient water quality of effluent for reuse for toilet flushing and environmental purposes. Cathodic reduction of water and proton on stainless steel cathodes produced molecular H2 with moderate levels of current and energy efficiency. This thesis presents a comprehensive environmental analysis together with kinetic models to provide an in-depth understanding of reaction pathways mediated by the RCS and the effects of key operating parameters. The latter part of this thesis is dedicated to bilayer hetero-junction anodes which show enhanced generation efficiency of RCS and long-term stability.

Chapter 2 describes the reaction pathway and kinetics of urea degradation mediated by electrochemically generated RCS. The urea oxidation involves chloramines and chlorinated urea as reaction intermediates, for which the mass/charge balance analysis reveals that N₂ and CO₂ are the primary products. Chapter 3 investigates direct-current and photovoltaic powered WEC for domestic wastewater treatment, while Chapter 4 demonstrates the feasibility of the WEC to treat model septic tank effluents. The results in Chapter 2 and 3 corroborate the active roles of chlorine radicals (Cl•/Cl₂^-•) based on iR-compensated anodic potential (thermodynamic basis) and enhanced pseudo-first-order rate constants (kinetic basis). The effects of operating parameters (anodic potential and [Cl^-] in Chapter 3; influent dilution and anaerobic pretreatment in Chapter 4) on the rate and current/energy efficiency of pollutants degradation and H₂ production are thoroughly discussed based on robust kinetic models. Chapter 5 reports the generation of RCS on Ir_0.7Ta_0.3O_y/Bi_xTi_1-xO_z hetero-junction anodes with enhanced rate, current efficiency, and long-term stability compared to the Ir_0.7Ta_0.3O_y anode. The effects of surficial Bi concentration are interrogated, focusing on relative distributions between surface-bound hydroxyl radical and higher oxide.

Adesão dos cimentos Epiphany SE e iRoot SP: Resistência à tração e mapeamento dentinário por microscopia digital

O objetivo deste estudo foi avaliar o efeito da microestrutura dentinária na adesão de cimentos endodônticos modernos através: do desenvolvimento de uma metodologia para caracterizar microestruturalmente a dentina; da avaliação da resistência de união (através de ensaios de tração) dos cimentos endodônticos Epiphany SE, iRoot SP e AH Plus; da correlação dos dados obtidos da caracterização da microestrutura dentinária e dos ensaios de tração. Trinta terceiros molares inclusos, recém extraídos, foram embutidos em resina epóxi e seccionados 0,5mm abaixo da junção esmalte-dentina. Doze amostras foram eliminadas durante à preparação metalográfica devido à exposição da câmara pulpar. De cada dente, uma área de análise (AA) com 3,25 mm de diâmetro foi mapeada utilizando técnicas de microscopia ótica digital para: captura de ~400 imagens formando um mosaico; análise digital de imagens, obtendo os resultados de quantidade de túbulos (QT) e de fração de área de túbulos (FAT) do mosaico; conversão da imagem do mosaico em um mapa colorido em que as cores estão diretamente relacionadas à densidade de área tubular. As dezoito amostras restantes foram divididas em 3 grupos (N=6), de acordo com o cimento utilizado, para confecção dos corpos de prova para os ensaios de tração. Os valores de da resistência de união (RU) obtidos foram analisados estatisticamente com teste não-pareado t com correção de Welch e pelo teste F para comparar variâncias Os dados de FAT e de QT foram submetidos ao teste de D'Agostino & Pearson revelando-se não normais (P>0,05), o que indica grande variabilidade da amostragem. O cimento Epiphany SE apresentou uma resistência de união significativamente menor que o cimento AH Plus (P <0,05). Os corpos de prova do iRoot SP falharam prematuramente e não foram analisados. A aplicação do teste r de Spearman não demonstrou correlação significativa entre FAT e RU (P>0,05). O MEV de pressão variável foi utilizado para avaliar qualitativamente a superfície de fratura após os ensaios de tração. A análise revelou um padrão de fratura mista para o AH Plus e o Epiphany SE, além de diferenças no tamanho e na forma das partículas desses cimentos, o que pode influenciar no comportamento mecânico. Dentro da amostragem realizada, não se encontrou correlação significativa entre microestrutura dentinária e a resistência de união.

I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy.

Films of Ti-Si-N obtained by reactively sputtering a TiSi_2, a Ti_5Si_3, or a Ti_3Si target are either amorphous or nanocrystalline in structure. The atomic density of some films exceeds 10^23 at./cm^3. The room-temperature resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 hour decreases the resistivity of the Ti-rich films deposited from the Ti_5Si_3 or the Ti_3Si target, but increases that of the Si-rich films deposited from the TiSi_2 target when the nitrogen content exceeds about 30 at. %.

Ti_(34)Si_(23)N_(43) deposited from the Ti_5Si_3 target is an excellent diffusion barrier between Si and Cu. This film is a mixture of nanocrystalline TiN and amorphous SiN_x. Resistivity measurement from 80 K to 1073 K reveals that this film is electrically semiconductor-like as-deposited, and that it becomes metal-like after an hour annealing at 1000 °C in vacuum. A film of about 100 nm thick, with a resistivity of 660 µΩcm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C upon 30 min vacuum annealing. When used between Si and Al, the maximum temperature of stability is 550 °C for 30 min. This film can be etched in a CF_4/O_2 plasma.

The amorphous ternary metallic alloy Zr_(60)Al_(15)Ni_(25) was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering and cross-sectional transmission electron microscopy studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel is depleted from the oxide and enriched in the amorphous alloy below the oxide/alloy interface. The oxide layer thickness grows parabolically with the annealing duration, with a transport constant of 2.8x10^(-5) m^2/s x exp(-1.7 eV/kT). The oxidation rate is most likely controlled by the Ni diffusion in the amorphous alloy.

At later stages of the oxidation process, precipitates of nanocrystalline ZrO_2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy.

Zn-VI/Cu2O Heterojunctions for Earth-Abundant Photovoltaics

The need for sustainable energy production motivates the study of photovoltaic materials, which convert energy from sunlight directly into electricity. This work has focused on the development of Cu₂O as an earth-abundant solar absorber due to the abundance of its constituent elements in the earth's crust, its suitable band gap, and its potential for low cost processing. Crystalline wafers of Cu₂O with minority carrier diffusion lengths on the order of microns can be manufactured in a uniquely simple fashion — directly from copper foils by thermal oxidation. Furthermore, Cu₂O has an optical band gap of 1.9 eV, which gives it a detailed balance energy conversion efficiency of 24.7% and the possibility for an independently connected Si/Cu₂O dual junction with a detailed balance efficiency of 44.3%.

However, the highest energy conversion efficiency achieved in a photovoltaic device with a Cu₂O absorber layer is currently only 5.38% despite the favorable optical and electronic properties listed above. There are several challenges to making a Cu₂O photovoltaic device, including an inability to dope the material, its relatively low chemical stability compared to other oxides, and a lack of suitable heterojunction partners due to an unusually small electron affinity. We have addressed the low chemical stability, namely the fact that Cu₂O is an especially reactive oxide due to its low enthalpy of formation (ΔH_f⁰ = -168.7 kJ/mol), by developing a novel surface preparation technique. We have addressed the lack of suitable heterojunction partners by investigating the heterojunction band alignment of several Zn-VI materials with Cu₂O. Finally, We have addressed the typically high series resistance of Cu₂O wafers by developing methods to make very thin, bulk Cu₂O, including devices on Cu₂O wafers as thin as 20 microns. Using these methods we have been able to achieve photovoltages over 1 V, and have demonstrated the potential of a new heterojunction material, Zn(O,S).

Photoelectrochemistry of GaAs and Si liquid junctions

A quantitative study has been performed on the stability of GaAs surfaces in a 0.10 M K₂Se-0.01 M K₂Se₂ aqueous solution. In this electrolyte, n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se^2-. Chemisorption of group VIIIB metal ions onto the GaAs surfaces yielded improved current-voltage behavior of the GaAs photoanodes, and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se^2- species. Related experiments on n-GaAs, pGaAs, and Sn-doped In₂O₃ electrodes in Te^2-/- aqueous solutions have also been performed.

The majority carrier (electrons) transfer rate constant at a highly doped n⁺-Si/Co(Cp)₂Cl-methanol junction has been measured directly using the chronoamperometry electrochemical technique. The reduction reaction rate of Co(Cp)₂+ was 0.03 cm-s^-1 at the Si electrode, and was more than 100 times slower than at a hanging mercury electrode. The slower rate was attributed to the smaller optical and static dielectric constants, and the lower density of electrons of the semiconductor. The experimental results were compared to the Marcus theory of charge transfer.

The unique properties of high purity Si/liquid junctions have been investigated under illumination conditions in which the photogenerated carrier concentration exceeds the dopant concentration. Under these high injection conditions, negligible electric fields exist at the semiconductor/liquid interface, and carrier motion is driven by diffusion. Studies of the current-voltage properties of the Si in methanol solutions containing various redox couples suggested that high efficiency photoelectrochemical cells could be established through selective collection of carriers at the semiconductor/liquid junction. The quasi-Fermi levels of electrons and holes were measured directly against the solution potential. Steady-state and transient photovoltage measurements, and theoretical modeliug of the carrier transport, generation, and recombination dynamics indicated that the quasi-Fermi levels were flat across the semiconductor sample. The recombination velocities at the Si/liquid junctions have also been measured, and were shown to vary with the solution potential following the Shockley-Read-Hall theory on recombination.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

A ipseidade na ética argumentativa de Paul Ricoeur

A ipseidade na ética argumentativa de Paul Ricoeur é a referência básica da hermenêutica do si ao qual sempre retorna. Ela estabelece a constante mediação reflexiva em oposição à pretensa posição imediata do sujeito. A mesmidade do si tem como contrapartida o outro. Na comparação, a mesmidade é sinônimo de identidade-idem em oposição à ipseidade-ipse que inclui a alteridade. Esta inclusão questiona a capacidade do si construtivo da ética e, portanto, responsável jurídica e moralmente nas várias injunções do outro. O projeto ético de Ricoeur é compreensível a partir e dentro de sua peculiar metodologia que ele denomina de dialética entre a ética teleológica e a moral deontológica. Esta dialética se fundamenta na tríade do desejo, do dever e da sabedoria prática em recíproca atividade, privilegiando a dimensão teleológica do desejo da vida boa com o outro e para o outro em instituições justas. A ética argumentativa tem a função de dar conteúdo as duas dialéticas pela inclusão do outro no si mesmo sem o qual a reflexão sobre a ipseidade perderia o sentido. A sabedoria prática da ética e do julgamento moral em situação inclui a discussão porque o conflito é insuperável e determina o argumento para o consenso eventual. Nossa tese é a afirmação da capacidade do si mesmo atuar ações construtivas. Além da critica à ideologia e à utopia, Ricoeur fundamenta a dialética entre o princípio-esperança e o princípio de responsabilidade mediante a via utópica do futuro e a via realista da preocupação com o presente diante dos casos inéditos em que a vida e o ecossistema se associam. A imputação pessoal e coletiva desde o passado, no presente para o futuro é devida à responsabilidade. A ipseidade constrói o futuro no presente através de decisões éticas.

Instabilities in a grating feedback external cavity semiconductor laser

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America

Estimating the underwater shape of tuna longlines with micro-bathythermographs

An estimation method for the three-dimensional underwater shape of tuna longlines is developed, using measurements of depth obtained from micro-bathythermographs (BTs) attached to the main line at equally spaced intervals. The shape of the main line is approximated by a model which consists of a chain of unit length lines (folding-rule model), where the junction points are placed at the observed depths. Among the infinite number of possible shapes, the most likely shape is considered to be the smoothest one that can be obtained with a numerical optimization algorithm. To validate the method, a series of experimental longline operations were conducted in the equatorial region of the eastern Pacific Ocean, using 13 or 14 micro-BTs per basket of main line. Concurrent observations of oceanographic conditions (currents and temperature structure) were obtained. The shape of the main line can be calculated at arbitrary times during operations. Shapes were consistent with the current structure. On the equator, the line was elevated significantly by the Equatorial Undercurrent. It is shown that the shape of main line depends primarily upon the vertical shear and direction of the current relative to the gear. Time sequences of calculated shapes reveals that observed periodic (1-2 hours) oscillations in depth of the gear was caused by swinging movements of the main line. The shortening rate of the main line is an important parameter for formulating the shape of the longline, and its precise measurement is desirable.

Inpedantzia altuko babes diferentziala.

[EU]Inpedantzia altuko babes sistema teknika sinplea da non korronte transformadoreak behar dituen babes eskema osatzeko. Korronte transformadore hauek ukondoko tentsio altua, magnetizazio ezaugarri antzekoak eta transformazio erlazio berdina izan behar dute. KT guztiak babestutako objektuaren amaieran jarri behar dira. Fase bakoitzari dagozkion KT guztiak paraleloan konektatu behar dira eta KT guztien juntura puntuan neurri adarra jarri behar da.

Genotypes, Recombinant Forms, and Variants of Norovirus GII.4 in Gipuzkoa (Basque Country, Spain), 2009-2012

Background: Noroviruses (NoVs) are genetically diverse, with genogroup II-and within it-genotype 4 (GII.4) being the most prevalent cause of acute gastroenteritis worldwide. The aim of this study was to characterize genogroup II NoV causing acute gastroenteritis in the Basque Country (northern Spain) from 2009-2012. Methods: The presence of NoV RNA was investigated by reverse transcriptase-polymerase chain reaction (RT-PCR) in stool specimens from children younger than 15 years old with community-acquired acute gastroenteritis, and from hospitalized adults or elderly residents of nursing homes with acute gastroenteritis. For genotyping, the open reading frames ORF1 (encoding the polymerase) and ORF2 (encoding the major capsid protein) were partially amplified and sequenced. Recombinant strains were confirmed by PCR of the ORF1/ORF2 junction region. Results: NoV was detected in 16.0% (453/2826) of acute gastroenteritis episodes in children younger than 2 years, 9.9% (139/1407) in children from 2 to 14 years, and 35.8% (122/341) in adults. Of 317 NoVs characterized, 313 were genogroup II and four were genogroup I. The GII.4 variants Den Haag-2006b and New Orleans-2009 predominated in 2009 and 2010-2011, respectively. In 2012, the New Orleans-2009 variant was partially replaced by the Sydney-2012 variant (GII.Pe/GII.4) and New Orleans-2009/Sydney-2012 recombinant strains. The predominant capsid genotype in all age groups was GII.4, which was the only genotype detected in outbreaks. The second most frequent genotype was GII.3 (including the recently described recombination GII.P16/GII.3), which was detected almost exclusively in children. Conclusion: Nine different genotypes of NoV genogroup II were detected; among these, intergenotype recombinant strains represented an important part, highlighting the role of recombination in the evolution of NoVs. Detection of new NoV strains, not only GII.4 strains, shortly after their first detection in other parts of the world shows that many NoV strains can spread rapidly.

Foto-assemblage

FOTO-ASSEMBLAGE consiste em nomenclatura sugestionada para definir os trabalhos que tenho produzido a partir da junção de fotografias digitais. As elaborações e fundamentações desses trabalhos representam também o cerne das pesquisas que resultaram na presente dissertação. Em princípio, o termo foto-assemblage haveria de referir-se a questões técnicas ou formais dessa prática. Contudo, ao desenvolver as pesquisas alguns procedimentos acabaram por determinar certas nuances que revelaram aspectos comuns também em seus e conteúdos. Como resultado de construções artísticas juntando fotografias desde 2009, cheguei às composições sintéticas aqui apresentadas, construídas a partir de duas fotografias. Aventei o nome foto-assemblage por observar nas imagens resultantes ressalvas que as distinguiriam de certas convenções atribuídas à ideia de fotografia. Ao mesmo tempo, as referidas imagens proporiam um possível desdobramento ao entendimento de assemblage enquanto técnica artística. Ainda que não seja uma regra, fotografias revelam imagens de momentos. Em sua relação com a compreensão humana de tempo ou espaço, fotografias quase sempre contêm instâncias mínimas. Fotografias, contudo, podem ser também compreendidas como uma contração de um percurso de tempo. Toda imagem fotográfica pode ser assimilada como resultante de determinados acontecimentos anteriores e mesmo tida como elemento gerador de conseqüências futuras. Seguindo esse entendimento, o que proponho com a foto-assemblage é que essa lide com segmentos de tempo ou de espaço contidos numa mesma imagem. Essas fotografias originárias ganhariam uma nova atribuição, sendo retiradas de seu contexto original, serviriam de balizas do percurso de tempo ou espaço suprimido e subjetivado entre elas. Poeticamente, eventos ocorridos entre as fotografias originárias estariam contidos nas imagens produzidas. O termo assemblage foi incorporado às artes a partir de 1953, por Jean Dubuffet, para descrever trabalhos que seriam algo mais do que simples colagem. A ideia de assemblage se baseia no princípio de que todo e qualquer material ou objeto colhido de nosso mundo cotidiano pode ser incorporado a uma obra de arte, criando um novo conjunto, sem que perca seu sentido original. Esse objeto é arrancado de seu uso habitual e inserido num novo contexto, tecendo laços de relação com os demais elementos, construindo narrativas num novo ambiente, o da obra. Na ideia da foto-assemblage, entretanto, é sugerido uso das imagens fotográficas originárias não como objetos que estariam em um mundo cotidiano, mas sim como imagem na concepção do que seria uma entidade mental. Adoto como que uma visão mágica onde as imagens originárias e básicas estariam numa outra dimensão, num plano bidimensional, não manipulável por nós habitantes da tridimensionalidade. Nesse ambiente imaginário ou não, as fotografias são assentadas consolidando a foto-assemblage. Quando a foto-assemblage se concretiza, se corporifica numa mídia, sendo impressa para uma contemplação, ai então, passaria a integrar nosso mundo tridimensional. O resultado poderia ser admitido como um híbrido, uma terceira coisa, a partir de duas que já não se dissociam mais no ensejo de uma compreensão estética. Ao final da dissertação, apresento experiências práticas que resultaram em quatro séries de imagens em foto-assemblage. Cada série enfatiza aspectos peculiares do que denomino paisagem expandida, representando percursos de tempo, espaço ou trajetos entre o mundo concreto e mundos do inconsciente.

Efeitos do tratamento periodontal não cirúrgico sobre a densidade e altura óssea alveolar

O objetivo deste trabalho foi avaliar o efeito do tratamento periodontal não cirúrgico (TPNC), na densidade e na altura óssea alveolar, em pacientes com periodontite, utilizando radiografias digitais diretas. Cento e um sítios, em dezenove pacientes (idade média 36 7.3 anos) foram acompanhados no dia 0, e 90 e 180 dias após TPNC. Os índices clínicos de profundidade de bolsa a sondagem (PBS), nível de inserção clínica, sangramento à sondagem e índice de placa foram registrados e radiografias digitais foram feitas. A densidade foi analisada através de regiões ósseas de interesse colocadas sobre a crista óssea alveolar (ROI I) e sobre o osso medular (ROI II). A altura óssea alveolar foi medida através da distância da crista óssea alveolar até a junção cemento esmalte. Os sítios profundos (PBS ≥ 5mm) apresentaram uma melhora clínica significante (p <0.01), acompanhada de um aumento na densidade da ROI I (p <0.01). A ROI II mostrou um aumento na densidade dos sítios com PBS ≤ 3mm em pacientes com periodontite agressiva (p <0.05). No entanto, houve diminuição nos sítios com PBS ≥ 5mm nesses mesmos pacientes (p <0.03). A altura óssea alveolar não sofreu alteração após TPNC. Após o tratamento periodontal não cirúrgico, observou-se que as radiografias obtidas através da técnica digital direta parecem mostrar um aumento na densidade da crista óssea, nos sítios profundos dos pacientes com periodontite. No entanto, a redução da profundidade de bolsa e do ganho no nível de inserção clínica não foi acompanhada por alterações significantes na altura óssea alveolar nestes sítios.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.