Spillway rating, partial tainter gate openings : Hydrologic Engineering Center computer program 22-J2-L225.

At head of cover title: Generalized computer program.

The effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and hyperfine interaction-both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the parameters varied in this work provides relevant information for the experimental design of these devices.

Quantum-gate characterization in an extended Hilbert space

We describe an approach for characterizing the process performed by a quantum gate using quantum process tomography, by first modeling the gate in an extended Hilbert space, which includes nonqubit degrees of freedom. To prevent unphysical processes from being predicted, present quantum process tomography procedures incorporate mathematical constraints, which make no assumptions as to the actual physical nature of the system being described. By contrast, the procedure presented here assumes a particular class of physical processes, and enforces physicality by fitting the data to this model. This allows quantum process tomography to be performed using a smaller experimental data set, and produces parameters with a direct physical interpretation. The approach is demonstrated by example of mode matching in an all-optical controlled-NOT gate. The techniques described are general and could be applied to other optical circuits or quantum computing architectures.

Demonstration of a simple entangling optical gate and its use in bell-state analysis

We demonstrate a new architecture for an optical entangling gate that is significantly simpler than previous realizations, using partially polarizing beam splitters so that only a single optical mode-matching condition is required. We demonstrate operation of a controlled-z gate in both continuous-wave and pulsed regimes of operation, fully characterizing it in each case using quantum process tomography. We also demonstrate a fully resolving, nondeterministic optical Bell-state analyzer based on this controlled-z gate. This new architecture is ideally suited to guided optics implementations of optical gates.

Quantum gate based on Stark tunable nanocrystal interactions with ultrahigh-Q/V field modes in fused silica microcavities

We investigate the use of nanocrystal quantum dots as a quantum bus element for preparing various quantum resources for use in photonic quantum technologies. Using the Stark-tuning property of nanocrystal quantum dots as well as the biexciton transition, we demonstrate a photonic controlled-NOT (CNOT) interaction between two logical photonic qubits comprising two cavity field modes each. We find the CNOT interaction to be a robust generator of photonic Bell states, even with relatively large biexciton losses. These results are discussed in light of the current state of the art of both microcavity fabrication and recent advances in nanocrystal quantum dot technology. Overall, we find that such a scheme should be feasible in the near future with appropriate refinements to both nanocrystal fabrication technology and microcavity design. Such a gate could serve as an active element in photonic-based quantum technologies.

Side boundary gate, Lahz House, Spring Hill

House beyond with skylight to bathroom visible on left. Winner of the Robin Dods Award RAIA Queensland Chapter 1990

Direct femtosecond laser inscription in transparent dielectrics

Since 1996 direct femtosecond inscription in transparent dielectrics has become the subject of intensive research. This enabling technology significantly expands the technological boundaries for direct fabrication of 3D structures in a wide variety of materials. It allows modification of non-photosensitive materials, which opens the door to numerous practical applications. In this work we explored the direct femtosecond inscription of waveguides and demonstrated at least one order of magnitude enhancement in the most critical parameter - the induced contrast of the refractive index in a standard borosilicate optical glass. A record high induced refractive contrast of 2.5×10-2 is demonstrated. The waveguides fabricated possess one of the lowest losses, approaching level of Fresnel reflection losses at the glassair interface. High refractive index contrast allows the fabrication of curvilinear waveguides with low bend losses. We also demonstrated the optimisation of the inscription regimes in BK7 glass over a broad range of experimental parameters and observed a counter-intuitive increase of the induced refractive index contrast with increasing translation speed of a sample. Examples of inscription in a number of transparent dielectrics hosts using high repetition rate fs laser system (both glasses and crystals) are also presented. Sub-wavelength scale periodic inscription inside any material often demands supercritical propagation regimes, when pulse peak power is more than the critical power for selffocusing, sometimes several times higher than the critical power. For a sub-critical regime, when the pulse peak power is less than the critical power for self-focusing, we derive analytic expressions for Gaussian beam focusing in the presence of Kerr non-linearity as well as for a number of other beam shapes commonly used in experiments, including astigmatic and ring-shaped ones. In the part devoted to the fabrication of periodic structures, we report on recent development of our point-by-point method, demonstrating the shortest periodic perturbation created in the bulk of a pure fused silica sample, by using third harmonics (? =267 nm) of fundamental laser frequency (? =800 nm) and 1 kHz femtosecond laser system. To overcome the fundamental limitations of the point-by-point method we suggested and experimentally demonstrated the micro-holographic inscription method, which is based on using the combination of a diffractive optical element and standard micro-objectives. Sub-500 nm periodic structures with a much higher aspect ratio were demonstrated. From the applications point of view, we demonstrate examples of photonics devices by direct femtosecond fabrication method, including various vectorial bend-sensors fabricated in standard optical fibres, as well as a highly birefringent long-period gratings by direct modulation method. To address the intrinsic limitations of femtosecond inscription at very shallow depths we suggested the hybrid mask-less lithography method. The method is based on precision ablation of a thin metal layer deposited on the surface of the sample to create a mask. After that an ion-exchange process in the melt of Ag-containing salts allows quick and low-cost fabrication of shallow waveguides and other components of integrated optics. This approach covers the gap in direct fs inscription of shallow waveguide. Perspectives and future developments of direct femtosecond micro-fabrication are also discussed.

Cascaded nonlinear absorption of femtosecond laser pulses in dielectrics

We investigated the energy deposition process leading to the waveguide inscription in transparent dielectrics both experimentally and theoretically. Parameters of multiphoton absorption process and inscription thresholds were measured in a range of materials including YAG, ZnSe, RbPb2Cl5 crystals, and in fused silica and BK7 glasses.

Performance characterisation of 42.65 Gbit/s dual-gate asynchronous digital optical regenerator using single MZM

The tolerance of a 42.65 Gbit/s dual-gate asynchronous digital optical regenerator using a single Mach-Zehnder modulator to optical signal-to-noise-ratio degradation and chromatic dispersion is experimentally demonstrated.

Study of "chopper/inverter" AC drives using gate turn-off thyristors"

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Plasma assisted femtosecond laser inscription in dielectrics

Principles of the femtosecond fabrication of the optoelectronic components in glass are explained and illustrated by examples of the in-bulk writing. The results of the experimental investigation of the dependence of the induced index change on the pulse energy and the numerical modelling of the corresponding laser-glass interaction are presented. The distribution of the plasma density is simulated that may bridge the gap between the models of the pulse propagation and the induced permanent refractive index change. © 2006 American Institute of Physics.