Characterization of hot-carriers induced degradation in mosfets through gate capacitances measurement at room and cryogenic temperatures

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Autoria(s): Hsu, Clement Che Ta.

Data(s)	01/01/2002
Identificador	http://espace.library.uq.edu.au/view/UQ:105867/THE16463.pdf http://espace.library.uq.edu.au/view/UQ:105867
Idioma(s)	eng
Publicador	The University of Queensland, School of Computer Science and Electrical Engineering
Palavras-Chave	#Hot-carriers #Low temperatures #L #290902 Integrated Circuits #671201 Integrated circuits and devices
Tipo	Thesis