896 resultados para Oscillator strength


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Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.

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We report a period continuously tunable, efficient, mid-infrared optical parametric oscillator (OPO) based on a fan-out periodically poled MgO-doped congruent lithium niobate (PPMgLN). The OPO is pumped by a Nd:YAG laser and a maximum idler output average power of 1.65 W at 3.93 mu m is obtained with a pump average power of 10.5 W, corresponding to the conversion efficiency of about 16% from the pump to the idler. The output spectral properties of the OPO with the fan-out crystal are analyzed. The OPO is continuously tuned over 3.78-4.58 mu m (idler) when fan-out periods are changed from 27.0 to 29.4 mu m. Compared with temperature tuning, fan-out period continuous tuning has faster tuning rate and wider tuning range.

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A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

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In conventional metals, there is plenty of space for dislocations-line defects whose motion results in permanent material deformation-to multiply, so that the metal strengths are controlled by dislocation interactions with grain boundaries(1,2) and other obstacles(3,4). For nano-structured materials, in contrast, dislocation multiplication is severely confined by the nanometre-scale geometries so that continued plasticity can be expected to be source-controlled. Nano-grained polycrystalline materials were found to be strong but brittle(5-9), because both nucleation and motion of dislocations are effectively suppressed by the nanoscale crystallites. Here we report a dislocation-nucleation-controlled mechanism in nano-twinned metals(10,11) in which there are plenty of dislocation nucleation sites but dislocation motion is not confined. We show that dislocation nucleation governs the strength of such materials, resulting in their softening below a critical twin thickness. Large-scale molecular dynamics simulations and a kinetic theory of dislocation nucleation in nano-twinned metals show that there exists a transition in deformation mechanism, occurring at a critical twin-boundary spacing for which strength is maximized. At this point, the classical Hall-Petch type of strengthening due to dislocation pile-up and cutting through twin planes switches to a dislocation-nucleation-controlled softening mechanism with twin-boundary migration resulting from nucleation and motion of partial dislocations parallel to the twin planes. Most previous studies(12,13) did not consider a sufficient range of twin thickness and therefore missed this strength-softening regime. The simulations indicate that the critical twin-boundary spacing for the onset of softening in nano-twinned copper and the maximum strength depend on the grain size: the smaller the grain size, the smaller the critical twin-boundary spacing, and the higher the maximum strength of the material.

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Nano-fibrillar adhesives can adhere strongly to surfaces as a gecko does. The size of each fiber has significant effects on the adhesion enhancement, especially on rough surfaces. In the present study, we report the size effects on the normal and shear strength of adhesion for a single viscoelastic fiber. It is found that there exists a limited region of the critical sizes under which the interfacial normal or tangential tractions uniformly attain the theoretical adhesion strength. The region for a viscoelastic fiber under tension with similar material constants to a gecko's spatula is 135-255 nm and that under torque is 26.5-52 nm. This finding is significant for the development of artificial biomimetic attachment systems.

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This article proposes a new wake oscillator model for vortex induced vibrations of an elastically supported rigid circular cylinder in a uniform current. The near wake dynamics related with the fluctuating nature of vortex shedding is modeled based on the classical van der Pol equation, combined with the equation for the oscillatory motion of the body. An appropriate approach is developed to estimate the empirical parameters in the wake oscillator model. The present predicted results are compared to the experimental data and previous wake oscillator Model results. Good agreement with experimental results is found.

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Based on improving the wake-oscillator model, an analytical model for vortex-induced vibration (VIV) of flexible riser under non-uniform current is presented, in which the variation of added mass at lock-in and the nonlinear relationship between amplitude of response and reduced velocity are considered. By means of empirical formula combining iteration computation, the improved analytical model can be conveniently programmed into computer code with simpler and faster computation process than CFD so as to be suitable to application of practical engineering. This model is validated by comparing with experimental result and numerical simulation. Our results show that the improved model can predict VIV response and lock-in region more accurately. At last, illustrative examples are given in which the amplitude of response of flexible riser experiencing VIV under action of non-uniform current is calculated and effects of riser tension and flow distribution along span of riser are explored. It is demonstrated that with the variation of tension and flow distribution, lock-in region of mode behaves in different way, and thus the final response is a synthesis of response of locked modes.