Lattice Engineering of III-Nitride Heterostructures and Their Applications

III-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents research on lattice engineering of III-Nitride materials, and the structural, optical, and electrical properties of its alloys, in order to approach the ideal material for various applications. We demonstrated the non-destructive and quantitative characterization of composition modulated nanostructure in InAlN thin films with X-ray diffraction. We found the development of the nanostructure depends on growth temperature, and the composition modulation has impacts on carrier recombination dynamics. We also showed that the controlled relaxation of a very thin AlN buffer (20 ~ 30 nm) or a graded composition InGaN buffer can significantly reduce the defect density of a subsequent epitaxial layer. Finally, we synthesized an InAlGaN thin films and a multi-quantum-well structure. Significant emission enhancement in the UVB range (280 – 320 nm) was observed compared to AlGaN thin films. The nature of the enhancement was investigated experimentally and numerically, suggesting carrier confinement in the In localization centers.

Modifying germanium nanowires for future devices: an in situ TEM study

Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable oxide it was surpassed by silicon. Today, as device dimensions are shrinking the silicon oxide is no longer suitable due to gate leakage and other low-κ dielectrics such as Al2O3 and HfO2 are being used. Germanium (Ge) is a promising material to replace or integrate with silicon (Si) to continue the trend of Moore’s law. Germanium has better intrinsic mobilities than silicon and is also silicon fab compatible so it would be an ideal material choice to integrate into silicon-based technologies. The progression towards nanoelectronics requires a lot of in depth studies. Dynamic TEM studies allow observations of reactions to allow a better understanding of mechanisms and how an external stimulus may affect a material/structure. This thesis details in situ TEM experiments to investigate some essential processes for germanium nanowire (NW) integration into nanoelectronic devices; i.e. doping and Ohmic contact formation. Chapter 1 reviews recent advances in dynamic TEM studies on semiconductor (namely silicon and germanium) nanostructures. The areas included are nanowire/crystal growth, germanide/silicide formation, irradiation, electrical biasing, batteries and strain. Chapter 2 details the study of ion irradiation and the damage incurred in germanium nanowires. An experimental set-up is described to allow for concurrent observation in the TEM of a nanowire following sequential ion implantation steps. Grown nanowires were deposited on a FIB labelled SiN membrane grid which facilitated HRTEM imaging and facile navigation to a specific nanowire. Cross sections of irradiated nanowires were also performed to evaluate the damage across the nanowire diameter. Experiments were conducted at 30 kV and 5 kV ion energies to study the effect of beam energy on nanowires of varied diameters. The results on nanowires were also compared to the damage profile in bulk germanium with both 30 kV and 5 kV ion beam energies. Chapter 3 extends the work from chapter 2 whereby nanowires are annealed post ion irradiation. In situ thermal annealing experiments were conducted to observe the recrystallization of the nanowires. A method to promote solid phase epitaxial growth is investigated by irradiating only small areas of a nanowire to maintain a seed from which the epitaxial growth can initiate. It was also found that strain in the nanowire greatly effects defect formation and random nucleation and growth. To obtain full recovery of the crystal structure of a nanowire, a stable support which reduces strain in the nanowire is essential as well as containing a seed from which solid phase epitaxial growth can initiate. Chapter 4 details the study of nickel germanide formation in germanium nanostructures. Rows of EBL (electron beam lithography) defined Ni-capped germanium nanopillars were extracted in FIB cross sections and annealed in situ to observe the germanide formation. Chapter 5 summarizes the key conclusions of each chapter and discusses an outlook on the future of germanium nanowire studies to facilitate their future incorporation into nanodevices.

Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures

Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g (2)(0)≃ 0.01 of the exciton emission. Here, we focus on the influence of the initial hole depth on the QD optical properties with the goal to create deep holes suited for filling with more complex nanostructures like quantum dot molecules (QDM). The depth of droplet etched nanoholes is controlled by the droplet material coverage and the process temperature, where a higher coverage or temperature yields deeper holes. The requirements of high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits to the process temperature. At high temperatures, the hole depths become inhomogeneous and the linewidth rapidly increases beyond 640 °C. With the present process technique, we identify an upper limit of 40-nm hole depth if the linewidth has to remain below 100 μeV. Furthermore, we study the exciton fine-structure splitting which is increased from 4.6 μeV in 15-nm-deep to 7.9 μeV in 35-nm-deep holes. As an example for the functionalization of deep nanoholes, self-aligned vertically stacked GaAs QD pairs are fabricated by filling of holes with 35 nm depth. Exciton peaks from stacked dots show linewidths below 100 μeV which is close to that from single QDs.

Synthesis and characterization of nanocomposites based on PANI and carbon nanostructures prepared by electropolymerization

Nanocomposites based on polyaniline (PANI) and carbon nanostructures (CNSs) (graphene (G) and multiwall carbon nanotubes (MWCNTs)) were prepared by in situ electrochemical polymerization. CNSs were inserted into the PANI matrix by dispersing them into the electrolyte before the electropolymerization. Electrochemical characterization by means of cyclic voltammetry and steady state polarization were performed in order to determine conditions for electro- polymerization. Electro-polymerization of the PANI based nanocomposites was carried out at 0.75 V vs. saturated calomel electrode (SCE) for 40 and 60 minutes. The morphology and structural characteristics of the obtained nanocomposites were studied by scanning electron microscopy (SEM) and Raman spectroscopy, while thermal stability was determined using thermal gravimetric analysis (TGA). According to the morphological and structural study, fibrous and porous structure of PANI based nanocomposites was detected well embedding both G and MWCNTs. Also, strong interaction between quinoidal structure of PANI with carbon nanostructures via π–π stacking was detected by Raman spectroscopy. TGA showed the increased thermal stability of composites reinforced with CNSs, especially those reinforced with graphene.

C-MEMS Based Micro Enzymatic Biofuel Cells

Miniaturized, self-sufficient bioelectronics powered by unconventional micropower may lead to a new generation of implantable, wireless, minimally invasive medical devices, such as pacemakers, defibrillators, drug-delivering pumps, sensor transmitters, and neurostimulators. Studies have shown that micro-enzymatic biofuel cells (EBFCs) are among the most intuitive candidates for in vivo micropower. In the fisrt part of this thesis, the prototype design of an EBFC chip, having 3D intedigitated microelectrode arrays was proposed to obtain an optimum design of 3D microelectrode arrays for carbon microelectromechanical systems (C-MEMS) based EBFCs. A detailed modeling solving partial differential equations (PDEs) by finite element techniques has been developed on the effect of 1) dimensions of microelectrodes, 2) spatial arrangement of 3D microelectrode arrays, 3) geometry of microelectrode on the EBFC performance based on COMSOL Multiphysics. In the second part of this thesis, in order to investigate the performance of an EBFC, behavior of an EBFC chip performance inside an artery has been studied. COMSOL Multiphysics software has also been applied to analyze mass transport for different orientations of an EBFC chip inside a blood artery. Two orientations: horizontal position (HP) and vertical position (VP) have been analyzed. The third part of this thesis has been focused on experimental work towards high performance EBFC. This work has integrated graphene/enzyme onto three-dimensional (3D) micropillar arrays in order to obtain efficient enzyme immobilization, enhanced enzyme loading and facilitate direct electron transfer. The developed 3D graphene/enzyme network based EBFC generated a maximum power density of 136.3 μWcm-2 at 0.59 V, which is almost 7 times of the maximum power density of the bare 3D carbon micropillar arrays based EBFC. To further improve the EBFC performance, reduced graphene oxide (rGO)/carbon nanotubes (CNTs) has been integrated onto 3D mciropillar arrays to further increase EBFC performance in the fourth part of this thesisThe developed rGO/CNTs based EBFC generated twice the maximum power density of rGO based EBFC. Through a comparison of experimental and theoretical results, the cell performance efficiency is noted to be 67%.

Reconfigurable Matching Networks for RF Amplifiers

This article presents applications of reconfigurable matching networks for RF amplifier design. Two possible solutions are given, one where the switching element is a PIN diode, and the other is based on graphene. Due to the fact that its conductivity depends on applied bias voltage, the graphene-based circuits can be used in microwave circuits as controllable elements. The structure of the proposed switch is very simple and it is particularly convenient for microstrip-based circuits. Because of that, a design of reconfigurable amplifier with the graphene-based switch is presented together with the one which has the PIN diode switch. Both amplifiers have the same specifications, and the one with the PIN diode switch is fabricated. The amplifier utilizing the PIN switch was used as a reference to make a comparison the two types of switches. Results of both amplifiers are very similar which indicates possible future applications of the graphene-based switch.

Highly linear reconfigurable UWB filters with independently controlled dual bandnotch

This letter proposes a high-linearity reconfigurable lower ultra-wideband (3.1–5.25 GHz) filter with independently controlled dual bandnotch at WiMAX 3.5 GHz band and satellite communication systems 4.2 GHz band. Reconfigurability has been achieved by the implementation of Graphene based switches (simulation only) and PIN diodes (measurements). The simulation and measurement results in OFF state show an entire bandpass response from 3.1 GHz to 5.25 GHz and with a very low insertion loss. In ON state, the results show that sharp rejections at 3.5 GHz and 4.2 GHz are achieved, with a low passband insertion loss. The two bandnotch operate independently of each other; thus allowing to control the behaviour of the required bandnotch. The third order intermodulation products were also measured in OFF and ON states and the linearity results have been presented. The filter is able to achieve a high performance with good linearity and no significant loss.

Efficient simulations with electronic open boundaries

We present a reformulation of the hairy-probe method for introducing electronic open boundaries that is appropriate for steady-state calculations involving nonorthogonal atomic basis sets. As a check on the correctness of the method we investigate a perfect atomic wire of Cu atoms and a perfect nonorthogonal chain of H atoms. For both atom chains we find that the conductance has a value of exactly one quantum unit and that this is rather insensitive to the strength of coupling of the probes to the system, provided values of the coupling are of the same order as the mean interlevel spacing of the system without probes. For the Cu atom chain we find in addition that away from the regions with probes attached, the potential in the wire is uniform, while within them it follows a predicted exponential variation with position. We then apply the method to an initial investigation of the suitability of graphene as a contact material for molecular electronics. We perform calculations on a carbon nanoribbon to determine the correct coupling strength of the probes to the graphene and obtain a conductance of about two quantum units corresponding to two bands crossing the Fermi surface. We then compute the current through a benzene molecule attached to two graphene contacts and find only a very weak current because of the disruption of the π conjugation by the covalent bond between the benzene and the graphene. In all cases we find that very strong or weak probe couplings suppress the current.

Toward controlled growth of helicity-specific carbon nanotubes

The underlying mechanisms for the nucleation of carbon nanotubes as well as their helicity, remain elusive. Here, using van der Waals dispersion force calculations implemented within density functional theory, we study the cap formation, believed to be responsible for the chirality of surface-catalyzed carbon nanotubes. We find the energetics associated with growth along different facets to be independent of the surface orientation and that the growth across an edge along the axis of the metal particle leads to a perfect honeycomb lattice in a curved geometry. The formation of defects in the graphene matrix, which bend the carbon plane, requires that two or more graphene embryos with significantly different growth axis merge. Such scenario is only possible at the front- or back-end of the metal particle where growth symmetry is broken. The graphene embryos reconstruct their hexagonal structure into pentagons, heptagons, and octagons counterpart to accommodate the tube curvature.

High-Performance WSe2 CMOS Technology and Integrated Circuits.

Because of their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.

Multiscale Analysis for Field-Effect Penetration through Two-Dimensional Materials

Gate-tunable two-dimensional (2D) materials-based quantum capacitors (QCs) and van der Waals heterostructures involve tuning transport or optoelectronic characteristics by the field effect. Recent studies have attributed the observed gate-tunable characteristics to the change of the Fermi level in the first 2D layer adjacent to the dielectrics, whereas the penetration of the field effect through the one-molecule-thick material is often ignored or oversimplified. Here, we present a multiscale theoretical approach that combines first-principles electronic structure calculations and the Poisson–Boltzmann equation methods to model penetration of the field effect through graphene in a metal–oxide–graphene–semiconductor (MOGS) QC, including quantifying the degree of “transparency” for graphene two-dimensional electron gas (2DEG) to an electric displacement field. We find that the space charge density in the semiconductor layer can be modulated by gating in a nonlinear manner, forming an accumulation or inversion layer at the semiconductor/graphene interface. The degree of transparency is determined by the combined effect of graphene quantum capacitance and the semiconductor capacitance, which allows us to predict the ranking for a variety of monolayer 2D materials according to their transparency to an electric displacement field as follows: graphene > silicene > germanene > WS2 > WTe2 > WSe2 > MoS2 > phosphorene > MoSe2 > MoTe2, when the majority carrier is electron. Our findings reveal a general picture of operation modes and design rules for the 2D-materials-based QCs.

Dielectric screening in atomically thin boron nitride nanosheets

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

First-Principles Study of the Electronic and Magnetic Properties of Defects in Carbon Nanostructures

Understanding the magnetic properties of graphenic nanostructures is instrumental in future spintronics applications. These magnetic properties are known to depend crucially on the presence of defects. Here we review our recent theoretical studies using density functional calculations on two types of defects in carbon nanostructures: Substitutional doping with transition metals, and sp$^3$-type defects created by covalent functionalization with organic and inorganic molecules. We focus on such defects because they can be used to create and control magnetism in graphene-based materials. Our main results are summarized as follows: i)Substitutional metal impurities are fully understood using a model based on the hybridization between the $d$ states of the metal atom and the defect levels associated with an unreconstructed D$_{3h}$ carbon vacancy. We identify three different regimes, associated with the occupation of distinct hybridization levels, which determine the magnetic properties obtained with this type of doping; ii) A spin moment of 1.0 $\mu_B$ is always induced by chemical functionalization when a molecule chemisorbs on a graphene layer via a single C-C (or other weakly polar) covalent bond. The magnetic coupling between adsorbates shows a key dependence on the sublattice adsorption site. This effect is similar to that of H adsorption, however, with universal character; iii) The spin moment of substitutional metal impurities can be controlled using strain. In particular, we show that although Ni substitutionals are non-magnetic in flat and unstrained graphene, the magnetism of these defects can be activated by applying either uniaxial strain or curvature to the graphene layer. All these results provide key information about formation and control of defect-induced magnetism in graphene and related materials.

2.2 eV luminescence in GaN

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.

Grafene: proprietà chimico-fisiche strutturali e applicazioni innovative in campo biomedico

Il mio elaborato, partendo dalla scoperta di un nuovo materiale, il grafene, ne illustra le caratteristiche, la produzione, la distribuzione e le applicazioni. Lo studio è stato condotto tramite l' utilizzo di fonti bibliografiche e sitografiche , con lo scopo di far conoscere questo nuovo materiale e di illustrarne le potenzialità e le forme di utilizzo, in particolare in ambito biomedico. Si illustreranno nel dettaglio le sue proprietà fisiche e chimiche, descrivendo alcuni metodi sperimentali con i quali viene sintetizzato. In particolare, vedremo nel dettaglio la tecnica sperimentale di sintesi, chiamata Chemical Vapour Deposition, e il successivo trasferimento del grafene prodotto su diversi substrati adatti per la sua caratterizzazione. Inoltre, analizzeremo lo sfruttamento tecnologico di questo materiale e le varie possibilità di creare nuovi compositi. Sono state svolte alcune considerazioni non solo sugli scenari attuali, ma anche su quelli futuri, mettendo in luce le ricerche e le tecniche di produzione nell'ambito di una vasta gamma di applicazioni. Il lavoro svolto è stato possibile grazie all' interesse crescente per il grafene che ha portato, il 28 gennaio 2013, la Comunità Europea ad approvare i due più grandi progetti mai finanziati in Europa. Tra questi il Graphene Flagship Project (www.graphene-flagship.eu) che coinvolge oltre 143 gruppi di ricerca da 23 Stati Europei con un budget di 1000 milioni di euro per lo sviluppo di tecnologie e dispositivi a base grafene.