2.2 eV luminescence in GaN

Autoria(s): Hofmann, D. M.; Kovalev, D.; Steude, G.; Volm, D.; Meyer, B. K.; Xavier, C.; Monteiro, T.; Pereira, E.; Mokov, E. N.; Amano, H.; Akasaki, I.
Data(s)

22/08/2016

1996
Resumo

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.
Identificador

0272-9172

http://hdl.handle.net/10773/15993
Idioma(s)

eng
Publicador

Materials Research Society
Relação

http://www.scopus.com/inward/record.url?eid=2-s2.0-0029765051&partnerID=40&md5=db50068d3f8e343c077398c254b76970

http://dx.doi.org/10.1557/PROC-395-619
Direitos

restrictedAccess
Palavras-Chave #Crystal defects #Epitaxial growth #Luminescence #Magnetic resonance #Mathematical models #Metallorganic vapor phase epitaxy #Sapphire #Photoluminescence #Silicon carbide #Spectroscopy #Substrates
Tipo

conferenceObject
Acesso ao item digital