Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques

The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0.2Ga0.8As single quantum-well structure, by measuring the capacitance-voltage (C - V) profiling, taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carriers from the quantum well, respectively. We found that Delta E-C = 0.227 eV, corresponding to about 89% Delta E-g, from the C - V profiling; and Delta E-C = 0.229eV, corresponding to about 89.9% Delta E-g, from the deep-level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity Delta E-C obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique. (C) 1998 American Institute of Physics.

基于进化计算的无人飞行器多航迹规划

针对飞行器多航迹规划问题展开研究.在分析多峰值函数优化问题的基础上,提出了一种基于进化计算的飞行器多航迹规划方法.该方法通过使用特定的染色体表示方法和进化算子,可以有效利用各种环境信息,处理各种航迹约束.同时,通过引入聚类算法,将种群中的个体按其空间分布进行聚类,生成若干个不同子种群.在进化过程中,所有个体只在各自的子种群内部进化.当进化结束时,每个子种群将分别生成一条各自的最优航迹,从而为飞行器生成多条不同的可选航迹.仿真结果表明了该方法的有效性.

Control mechanisms for gas hydrate production by depressurization in different scale hydrate reservoirs

The methane hydrate was formed in a pressure vessel 38 mm in id and 500 mm in length. Experimental works on gas production from the hydrate-bearing core by depressurization to 0.1, 0.93, and 1.93 MPa have been carried out. The hydrate reservoir simulator TOUGH-Fx/Hydrate was used to simulate the experimental gas production behavior, and the intrinsic hydration dissociation constant (K-0) fitted for the experimental data was on the order of 104 mol m(-2) Pa-1 s(-1), which was one order lower than that of the bulk hydrate dissociation. The sensitivity analyses based on the simulator have been carried out, and the results suggested that the hydrate dissociation kinetics had a great effect on the gas production behavior for the laboratory-scale hydrate-bearing core. However for a field-scale hydrate reservoir, the flow ability dominated the gas production behavior and the effect of hydrate dissociation kinetics on the gas production behavior could be neglected.

干旱对不同抗旱性冬小麦旗叶光合及主茎干物质转运的影响

以冬小麦品种长武134(抗旱性强)和陕253(抗旱性弱)为材料,研究干旱对旗叶净光合速率和叶绿素含量、主茎及其组成节间花前积累干物质的转运及其对穗粒重贡献的影响。结果表明,干旱条件下长武134主茎穗粒重降幅小于陕253;干旱缩短了小麦花后旗叶光合速率高值持续期(PAD)和叶绿素含量缓降期(RSP),长武134受影响程度较小。长武134除穗下节外,其余各节间及茎杆干物质转运量及对籽粒贡献率降幅均大于陕253;干旱提高了陕253穗下节和倒二节干物质转运率,降低了倒三节和下部节干物质转运率,茎杆干物质转运率无明显变化;长武134除穗下节外其余各节间及茎杆干物质转运率均明显低于对照,而且距离穗部越远的节位降低幅度越大。上述结果表明,干旱条件下不同节位干物质转运能力变化与距离穗远近有关,花前茎杆干物质转运并不能补偿籽粒产量的损失,花后旗叶光合功能期延长是小麦抗旱高产的主要原因。

黄土丘陵区长芒草群落对土壤水分入渗的影响

以黄土丘陵区长芒草群落为研究对象,采用圆盘入渗仪对不同盖度长芒草群落下的土壤入渗过程进行了对比研究。结果表明,在0-80 cm土壤剖面上,不同盖度的长芒草群落下土壤初始入渗速率和稳定入渗速率都随着土壤深度增加而下降。在同一深度的土壤剖面上,群落盖度越大土壤初始入渗速率和稳定入渗速率也分别越高。影响土壤初始入渗速率的主要因素是土壤有效孔隙度、初始含水量和水稳性团聚体含量。影响土壤稳定入渗速率的主要因素是土壤有效孔隙度、根长密度和水稳性团体含量,但水稳性团聚体对表层土壤初始入渗速率和稳定入渗速率的影响不显著。长芒草群落不仅通过根系对土壤的物理机械作用以及根系周转过程中形成的生物性大孔提高了土壤入渗速率,还通过提高土壤有机质和水稳性团聚体含量提高了土壤入渗速率。