Exploring the Diversity of Physiology for Applications in Wastewater Treatment and Biofuels Production

A recently established strain collection of freshwater microalgae native to Quebec was examined for physiological diversity. The 100 strains appeared very heterogeneous in terms of growth when they were cultured at 10±2 °C or 22±2 °C on the secondary effluent from a municipal wastewater treatment plant (WW) and defined BBM medium. Scatterplots were used to examine the diversity in physiology that might be present in the collection. These showed a number of interesting results. There was a fair amount of dispersion in growth rates by media type independent of temperature. Surprisingly considering that all the isolates had been initially enriched on BBM, the distribution was quite symmetrical around the iso-growth line, suggesting that enrichment on BBM did not seem to bias the cells for growth on this medium versus WW. As well, considering that all the isolates had been initially enriched at 22 °C, it is quite surprising that the distribution of specific growth rates was quite symmetrical around the iso-growth line with roughly equal numbers of isolates found on either side. Thus enrichment at 22 °C does not seem to bias the cells for growth at this temperature versus 10°C. The scatterplots obtained when the percentage lipid of cultures grown on BBM were compared with cultures grown on WW at either 10 °C or 22 °C made it apparent that lipid production was favored by growth on WW at either temperature and that lipid production does not seem to be particularly favored by one temperature over the other. When the collection was queried for differences with respect to sampling location, statistical analysis showed that roughly the same degree of physiological diversity was found with samples from the two different aggregate locations.

Decreased 5-F{T1fti Receor Gene Expression and 5-F4T11 Receptor Protein in the Cerebra'' Cortex and Brain Stem during Pancreatic Regenera tion in Rats

The present study was to investigate the rote of central 5-11T and 5-HT,:v receptor Lindin4o and acne expression in it 'at mo(lel of pancreatic regeneration using 60" -, pancreatcutumy. The pancreatic regeneration was evaluated by 5-HT content and 5-HT,,receptor gene expression in the cerebral cortex (CC) and brain stem MS) of Alain opcrate,t, 7 It utd 7 (.lays panereatectomised rats. 5-11T content significantly increased in the CC' (I' 1.1)11 and 13S (P 0.05) of 72 Ii p.ntcreateetomiscd rats. Sympathetic activity was decreased as indicated by the significantly decreased norcpiuephrine (NIi) and epinephrine (FTI) Icvcl (1' < 0.001 and P < 0.05) in the plasma of 72 h panereateetomised rats. 5-111 ,^, receptor density and affinity was decreased in the CC (P < 0.01) and BS (P < 0.01). These rh:)nge; correlated with a diminished 5-IITIA receptor mRNA expression in the brain region. studied. Our resuils suggest that the brain 5-11T through 5-HTin receptor has it funcuon:0 rule iii 11w pi+ncreatic regcner:ttion through the sympathetic regulation.

Dopaminergic Regulation of Glucose-induced Insulin Secretion through Dopamine D2 Receptors in the Pancreatic Islets In Vitro

The stimulatory effect of dopamine through dopamine 1)2 receptor on glucose - induced insulin secretion was studied in the pancreatic islets in nitro. I)oparnilie signifieanlly stimula(ed insulin secretion at a concentration of 10 a N1 in the presence of high,glucose ( 20 nii1 ). ' fhe higher concentrations of dopamine (111 -1() 4) inhibited glucose- induced insulin secretion in the presence of both 4 mM1 and 20 m M glucose. Stimulatory and inhibitory effect of dopamine on glucose - induced insulin secretion was reverted by the addition of dopamine 1)2 receptor antagonists such as butaclamol and sulpiride . Norepinephrine (NE) at 111 4 11 concentration inhibited the dopamine uptake as well as its stimulatory effect at 11) - 8 IN1 concentration on glucose induced insulin secretion. Our results suggest that dopamine exerts a differential effect on glucose -induced insulin secretion through dopamine D2 receptor and it is essential for the regulation of glucose-induced insulin secretion by pancreatic islets.

Growth and Characterisation of Radio Frequency Magnetron Sputttered Indium Tin Oxide Thin Films

The increasing interest in the interaction of light with electricity and electronically active materials made the materials and techniques for producing semitransparent electrically conducting films particularly attractive. Transparent conductors have found major applications in a number of electronic and optoelectronic devices including resistors, transparent heating elements, antistatic and electromagnetic shield coatings, transparent electrode for solar cells, antireflection coatings, heat reflecting mirrors in glass windows and many other. Tin doped indium oxide (indium tin oxide or ITO) is one of the most commonly used transparent conducting oxides. At present and likely well into the future this material offers best available performance in terms of conductivity and transmittivity combined with excellent environmental stability, reproducibility and good surface morphology. Although partial transparency, with a reduction in conductivity, can be obtained for very thin metallic films, high transparency and simultaneously high conductivity cannot be attained in intrinsic stoichiometric materials. The only way this can be achieved is by creating electron degeneracy in a wide bandgap (Eg > 3eV or more for visible radiation) material by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a number of other materials like Zinc oxide, Cadmium oxide etc. ITO shows interesting and technologically important combination of properties viz high luminous transmittance, high IR reflectance, good electrical conductivity, excellent substrate adherence and chemical inertness. ITO is a key part of solar cells, window coatings, energy efficient buildings, and flat panel displays. In solar cells, ITO can be the transparent, conducting top layer that lets light into the cell to shine the junction and lets electricity flow out. Improving the ITO layer can help improve the solar cell efficiency. A transparent ii conducting oxide is a material with high transparency in a derived part of the spectrum and high electrical conductivity. Beyond these key properties of transparent conducting oxides (TCOs), ITO has a number of other key characteristics. The structure of ITO can be amorphous, crystalline, or mixed, depending on the deposition temperature and atmosphere. The electro-optical properties are a function of the crystallinity of the material. In general, ITO deposited at room temperature is amorphous, and ITO deposited at higher temperatures is crystalline. Depositing at high temperatures is more expensive than at room temperature, and this method may not be compatible with the underlying devices. The main objective of this thesis work is to optimise the growth conditions of Indium tin oxide thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The films are also deposited on to flexible substrates by employing bias sputtering technique. The films thus grown were characterised using different tools. A powder x-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive x-ray analysis (EDX) and scanning electron microscopy (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UVVIS- NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using vander Pauw four probe technique. The plasma generated during the sputtering of the ITO target was analysed using Langmuir probe and optical emission spectral studies.

Optical and electrical properties of co-sputtered amorphous transparent conducting zinc indium tin oxide thin films

Highly conductive and transparent thin films of amorphous zinc indium tin oxide are prepared at room temperature by co-sputtering of zinc 10 oxide and indium tin oxide. Cationic contents in the films are varied by adjusting the power to the sputtering targets. Optical transmission study of 11 films showed an average transmission greater than 85% across the visible region. Maximum conductivity of 6×102 S cm−1 is obtained for Zn/In/ 12 Sn atomic ratio 0.4/0.4/0.2 in the film. Hall mobility strongly depends on carrier concentration and maximum mobility obtained is 18 cm2 V−1 s−1 13 at a carrier concentration of 2.1×1020 cm−3. Optical band gap of films varied from 3.44 eV to 3 eV with the increase of zinc content in the film 14 while the refractive index of the films at 600 nm is about 2.0.

Engineering the Properties of Indium Sulfide for Thin Film Solar Cells by Doping

In the present work, structural, optical and electrical properties of indium sulfide are tuned by specific and controlled doping. Silver, tin, copper and chlorine were used as the doping elements. In2S3 thin films for the present study were prepared using a simple and low cost “Chemical Spray Pyrolysis (CSP)” technique. This technique is adaptable for large-area deposition of thin films in any required shape and facilitates easiness of doping and/or variation of atomic ratio. It involves spraying a solution, usually aqueous, containing soluble salts of the constituents of the desired compound onto a heated substrate. Doping process was optimized for different doping concentrations. On optimizing doping conditions, we tuned the structural, optical and electrical properties of indium sulfide thin films making them perform as an ideal buffer layer.

Rotational analysis of the C1Π-X1 Σ+ system of indium monofluoride

Indium monofluoride was excited in a high-frequency discharge and the C-X system was photographed at a reciprocal dispersion of 0.3 AA mm-1 using a plane-grating spectrograph. Rotational analyses of the 0,0 1,0 2,2 3,3 4,4 2,4 3,5 4,6 and 5,7 bands have been carried out and the following molecular constants have been evaluated. Be'=0.2670(+or-3) cm-1, Be"=0.2628(+or-4) cm-1, alpha e'=0.0050(+or-4) cm-1, alpha e"=0.0020(+or-1) cm-1, De'=3.65(+or-5)*10-7 cm-1, De"=2.5(+or-3)*10-7 cm-1, beta e'=0.5(+or-2)*10-7 cm-1, beta e"=0.2(+or-1)*10-7 cm-1, re'=1.9672(+or-3) AA, re"=1.9853(+or-2) AA. The re" value agrees with the microwave absorption value 1.9854 AA.

Formation and characterisation of indium selenide thin films by elemental evaporation

This thesis deals with preparing stoichiometric crystalline thin films of InSe and In2Se3 by elemental evapouration and their property investigation.In the present study three temperature( or Elemental evapouration) method is utilized for the deposition of crystalline thin films . The deposition mechanism using three temperature method deals’ with condensation of solids on heated surfaces when the critical supersaturation of the vapour phase exceeds a certain limit. The critical values of the incident flux are related to substrate temperature and the interfacial energies of the involved vapours. At a favorable presence of component atoms in the vapour phase these can react and condense onto a substrate even at a elevated temperature. In the studies conducted the most significant factor is the formation of single compositional film namely indium mono selenide in the In –se system of compounds .Further this work shows the feasibility of thin film photovoltaic junctions of the schottky barrier type

Determination of charge carrier transport in radio frequency plasma polymerized aniline thin films

The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium–PA–aluminium (Al–PA–Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J –V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO–PA–Al structure) show a diode-like behaviour with a considerable rectification ratio

Emmer (Triticum dicoccon Schrank) in Oman

Emmer (Triticum dicoccon ) was collected recently in northern Oman. The material was analyzed morphologically and phenologically. It belongs to the Asiatic emmers (subsp. asiaticum) and not to the Ethiopian ones (subsp. abyssinicum), distributed in Ethiopia and Yemen, as originally expected. The determination of the material resulted in var. haussknechtianum and var. aeruginosum.

Photoschaltbare Azobenzol-modifizierte selbstorganisierte Monoschichten auf Gold(111)-Oberflächen

Für die Entwicklung photoschaltbarer selbstorganisierter Monoschichten (SAMs) auf Gold(111)-Oberflächen wurden neue Azobenzol-terminierte Asparagussäure - und Liponsäurederivate synthetisiert. Um den Einfluss lateraler Wasserstoffbrückenbindungen auf Qualität und Orientierungsordnung der Schichten zu untersuchen, wurden Monolagen, die durch amid- und esterverknüpfte Verbindungen gebildet wurden, miteinander verglichen. Die Filmbildung aus der Lösung wurde in situ durch optische Frequenzverdopplung (SHG) untersucht und die Photoreaktivität mittels Kontaktwinkelmessungen, Oberflächen-Plasmonenresonanz (SPR) und Ellipsometrie verfolgt. SAMs auf Gold wurden außerdem mit Hilfe von Röntgenphotoelektronenspektroskopie (XPS), Nahkanten-Reflexions-Röntgenabsorptionsspektroskopie (NEXAFS) und Infrarot-Reflexionsabsorptionsspektroskopie (IRRAS) charakterisiert, um die Filmqualität, die Bindung ans Substrat und Orientierungsordnung im Film zu ermitteln. Da die Chemisorption auf polykristallinem Gold formal der Koordinationschemie von 1,2-Dithiolan-Derivaten gegenüber nullwertigen Edelmetall-Zentralatomen entspricht, wurden etliche Pt-Komplexe durch oxidative Addition an [Pt(PPh3)4] dargestellt. Im Zusammenhang mit der Darstellung der Asparagussäure wurde die Kristallstruktur von [pipH]2[WS4] und der neuen Verbindungen [pipH]3[WS4](HS) und [pipH]4[WS4][WOS3] (pip = Piperidin) bestimmt. Wasserstoffbrückenbindungen zwischen den Piperidinium-Kationen und den Thiowolframat-Anionen spielen eine dominante strukturelle Rolle.

Predicted properties of the superheavy elements, II. Element 111, Eka-Gold

The chemical properties of element 111, eka-gold, are predicted through the use of the periodic table, relativistic Hartee-Fock-Slater calculations, and various qualitative theories which have established their usefulness in understanding and correlating properties of molecules. The results indicate that element 111 will be like Au(III) in its chemistry with little or no tendency to show stability in the I or II states. There is a possibility that the 111 - ion, analogous to the auride ion, will be stable.

Quadrupole moments of radium isotopes from the 7p^2P_3/2 hyperfine structure in Ra II

The hyperfine structure and isotope shift of ^{221- 226}Ra and ^{212, 214}Ra have been measured in the ionic (Ra 11) transition 7s^2 S_{1/2} - 7p ^2 P_{3/2} (\lamda = 381.4 nm). The method of on-line collinear fast-beam laser spectroscopy has been applied using frequency-doubling of cw dye laser radiation in an external ring cavity. The magnetic hyperfine fields are compared with semi-empirical and ab initio calculations. The analysis of the quadrupole splitting by the same method yields the following, improved values of spectroscopic quadrupole moments: Q_s(^221 Ra)= 1.978(7)b, Q_s (^223 Ra)= 1.254(3)b and the reanalyzed values Q_s(^209 Ra) = 0.40(2)b, Q_s(^211 Ra) = 0.48(2)b, Q_s(^227 Ra)= 1.58(3)b, Q_s (^229 Ra) = 3.09(4)b with an additional scaling uncertainty of ±5%. Furthermore, the J-dependence of the isotope shift is analyzed in both Ra II transitions connecting the 7s^2 S_{1/2} ground state with the first excited doublet 7p^ P_{1/2} and 7p^ P_{3/2}.