974 resultados para Wide Band Gap Semi-conductor
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Manganese tungstate (MnWO4) nanorods were prepared at room temperature by the co-precipitation method and synthesized after processing in a microwave-hydrothermal (MH) system at 140 degrees C for 6-96 min. These nanorods were structurally characterized by X-ray diffraction (XRD), Rietveld refinements and Fourier transform (FT)-Raman spectroscopy. The growth direction, shape and average size distribution of nanorods were observed by means of transmission electron microscopy (TEM) and high resolution TEM (HR-TEM). The optical properties of the nanorods were investigated by ultraviolet visible (UV-vis) absorption and photoluminescence (PL) measurements. XRD patterns, Rietveld refinement data and FT-Raman spectroscopy indicate that the MnWO4 precipitate is not a single phase structure while the nanorods synthesized by MH processing have a wolframite-type monoclinic structure without deleterious phases. FT-Raman spectra exhibited the presence of 17 Raman-active modes from 50 to 1,000 cm(-1). TEM and HR-TEM micrographs indicated that the nanorods are aggregated due to surface energy by Van der Waals forces and grow along the [100] direction. UV-vis absorption measurements confirmed non-linear values for the optical band gap (from 3.2 to 2.72 eV), which increased as the MH processing time increased. The structural characterizations indicated that the presence of defects in the MnWO4 precipitate promotes a significant contribution to maximum PL emission, while MnWO4 nanorods obtained by MH processing decrease the PL emission due to the reduction of defects in the lattice.
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In this communication, we report the effect of different surfactants [cetyltrimethylammonium bromide (CTAB), sodium dodecyl sulfate (SDS) and sodium bis(2-ethylhexyl)sulfosuccinate (AOT)] on the shape, growth and photoluminescence (PL) behavior of manganese tungstate (MnWO4) crystals synthesized by the microwave-hydrothermal (MH) method at 413 K for 45 min. These crystals were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), ultraviolet-visible (UV-vis) absorption spectroscopy and PL measurements. XRD patterns proved that these crystals have a monoclinic structure. FE-SEM images showed that MnWO4 crystals exhibit different shapes and growth mechanisms depending on the surfactant employed. The CTAB cationic surfactant promotes the hindrance of small nuclei that leads to the formation of flake-like nanocrystals, while SDS and AOT anionic surfactants promote a growth of crystals to plate-like and leaf-like crystals due to considerable size effect of counter-ions (RSO4- and RSO2O-) and an increase in Na+ ion remnants. UV-vis absorption spectroscopy revealed different optical band gap values due to modifications in the shape, surface and crystal size. Finally, the effect of surfactants on the crystal shapes and average crystal size distribution causing changes in the PL behavior of MnWO4 crystals was explained. (C) 2011 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
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In this paper, we report our initial research to obtain hexagonal rod-like elongated silver tungstate (alpha-Ag2WO4) microcrystals by different methods [sonochemistry (SC), coprecipitation (CP), and conventional hydrothermal (CH)] and to study their cluster coordination and optical properties. These microcrystals were structurally characterized by X-ray diffraction (XRD), Rietveld refinements, Fourier transform infrared (FT-IR), X-ray absorption near-edge structure (XANES), and extended X-ray absorption fine structure (EXAFS) spectroscopies. The shape and average size of these alpha-Ag2WO4 microcrystals were observed by field-emission scanning electron microscopy (FE-SEM). The optical properties of these microcrystals were investigated by ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) measurements. XRD patterns and Rietveld refinement data confirmed that alpha-Ag2WO4 microcrystals have an orthorhombic structure. FT-IR spectra exhibited four IR-active modes in a range from 250 to 1000 cm(-1). XANES spectra at the W L-3-edge showed distorted octahedral [WO6] clusters in the lattice, while EXAFS analyses confirmed that W atoms are coordinated by six O atoms. FE-SEM images suggest that the alpha-Ag2WO4 microcrystals grow by aggregation and the Ostwald ripening process. PL properties of alpha-Ag2WO4 microcrystals decrease with an increase in the optical band-gap values (3.19-3.23 eV). Finally, we observed that large hexagonal rod-like alpha-Ag2WO4 microcrystals prepared by the SC method exhibited a major PL emission intensity relative to alpha-Ag2WO4 microcrystals prepared by the CP and CH methods.
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The exploration of novel synthetic methodologies that control both size and shape of functional nanostructure opens new avenues for the functional application of nanomaterials. Here, we report a new and versatile approach to synthesize SnO2 nanocrystals (rutile-type structure) using microwave-assisted hydrothermal method. Broad peaks in the X-ray diffraction spectra indicate the nanosized nature of the samples which were indexed as a pure cassiterite tetragonal phase. Chemically and physically adsorbed water was estimated by TGA data and FT-Raman spectra to account for a new broad peak around 560 cm(-1) which is related to defective surface modes. In addition, the spherical-like morphology and low dispersed distribution size around 3-5 nm were investigated by HR-TEM and FE-SEM microscopies. Room temperature PL emission presents two broad bands at 438 and 764 nm, indicating the existence of different recombination centers. When the size of the nanospheres decreases, the relative intensity of 513 nm emission increases and the 393 nm one decreases. UV-Visible spectra show substantial changes in the optical absorbance of crystalline SnO2 nanoparticles while the existence of a small tail points out the presence of localized levels inside the forbidden band gap and supplies the necessary condition for the PL emission.
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Transparent nanostructure ZnO:CeO2 and ZnO thin films to use as solar protector were prepared by non-alkoxide sol-gel process and deposited on boronsilicate glass substrate by dip-coating technique and then heated at 300-500 degrees C. The films were characterized structurally, morphologically and optically by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission gun-scanning electron microscopy (FEG-SEM), scanning electron microscopy (SEM) and UV-Vis transmittance spectroscopy. The coatings presented high transparency in the visible region and excellent absorption in the UV. The band gap of the deposited films was estimated between 3.10 and 3.18 eV. Absorption of the films in the UV was increased by presence of cerium. The results suggest that the materials are promising candidates to use as coating solar protective. (C) 2012 Elsevier B.V. All rights reserved.
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MgTiO3 (MTO) thin films were prepared by the polymeric precursor method with posterior spin-coating deposition. The films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates and heat treated at 350 degrees C for 2 h and then heat treated at 400, 450, 500, 550, 600, 650 and 700 C for 2 h. The degree of structural order disorder, optical properties, and morphology of the MTO thin films were investigated by X-ray diffraction (XRD), micro-Raman spectroscopy (MR), ultraviolet-visible (UV-vis) absorption spectroscopy, photoluminescence (PL) measurements, and field-emission gun scanning electron microscopy (FEG-SEM) to investigate the morphology. XRD revealed that an increase in the annealing temperature resulted in a structural organization of MTO thin films. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and disordered asymmetric models. The electronic properties were analyzed, and the relevance of the present theoretical and experimental results was discussed in the light of PL behavior. The presence of localized electronic levels and a charge gradient in the band gap due to a break in the symmetry are responsible for the PL in disordered MTO lattice.
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The persistent luminescence of CdSiO3:Tb3+ was investigated with photoluminescence, thermoluminescence (TL), synchrotron radiation X-ray absorption (XANES and EXAFS) and UV-VUV spectroscopies. Only the typical intraconfigurational 4f(8)-4f(8) transitions of the Tb3+ ion were observed with no traces of band emission in either the conventional UV excited or persistent luminescence spectra. The trap structure from TL with three traps from 0.65 to 0.85 eV is ideal for room-temperature persistent luminescence similar to, e.g., Sr2MgSi2O7:Eu2+,R3+. Despite the rather low band gap energy, 5.28 eV, the persistent luminescence from Tb3+ is produced only under UV irradiation due to the inauspicious position of the F-7(6) ground level deep in the band gap of CdSiO3. This confirms the role of electrons as the charge carriers in the mechanism of Tb3+ persistent luminescence. The XANES spectra indicated the presence of only the trivalent Tb3+ species, thus excluding the direct Tb3+ -> Tb-IV oxidation during the charging process of persistent luminescence. Eventually, a unique persistent luminescence mechanism for Tb3+ in CdSiO3 was constructed based on the comprehensive experimental data.
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We present a new Ultra Wide Band (UWB) Timed- Array Transmitter System with Beamforming capability for high-resolution remote acquisition of vital signals. The system consists of four identical channels, where each is formed of a serial topology with three modules: programmable delay circuit (PDC or τ), a novel UWB 5th Gaussian Derivative order pulse generator circuit (PG), and a planar Vivaldi antenna. The circuit was designed using 0.18μm CMOS standard process and the planar antenna array was designed with filmconductor on Rogers RO3206 substrate. Spice simulations results showed the pulse generation with 104 mVpp amplitude and 500 ps width. The power consumption is 543 μW, and energy consumption 0.27 pJ per pulse using a 2V power supply at a pulse repetition rate (PRR) of 100 MHz. Electromagnetic simulations results, using CST Microwave (MW) Studio 2011, showed the main lobe radiation with a gain maximum of 13.2 dB, 35.5º x 36.7º angular width, and a beam steering between 17º and -11º for azimuthal (θ) angles and 17º and -18º for elevation (φ) angles at the center frequency of 6 GHz
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The energetic stability and the electronic properties of vacancies (VX) and antisites (XY) in PbSe and PbTe are investigated. PbSe and PbTe are narrow band gap semiconductors and have the potential to be used in infrared detectors, laser, and diodes. They are also of special interest for thermoelectric devices (TE). The calculations are based in the Density Functional Theory (DFT) and the General Gradient Approximation (GGA) for the exchange-correlation term, as implemented in the VASP code. The core and valence electrons are described by the Projected Augmented Wave (PAW) and the Plane Wave (PW) methods, respectively. The defects are studied in the bulk and nanowire (NW) system. Our results show that intrinsec defects (vacancies and antisites) in PbTe have lower formation energies in the NW as compared to the bulk and present a trend in migrate to the surface of the NW. For the PbSe we obtain similar results when compare the formation energy for the bulk and NW. However, the Pb vacancy and the antisites are more stable in the core of the NW. The intrinsec defects are shallow defects for the bulk system. For both PbSe and PbTe VPb is a shallow acceptor defect and VSe and VT e are shallow donor defects for the PbSe and PbTe, respectively. Similar electronic properties are observed for the antisites. For the Pb in the anion site we obtain an n-type semiconductor for both PbSe and PbTe, SeP b is a p-type for the PbSe, and T eP b is a n-type for PbTe. Due the quantum con¯nement effects present in the NW (the band gap open), these defects have different electronic properties for the NW as compared to the bulk. Now these defects give rise to electronic levels in the band gap of the PbTe NW and the VT e present a metallic character. For the PbSe NW a p-type and a n-type semiconductor is obtained for the VP b and P bSe, respectively. On the other hand, deep electronic levels are present in the band gap for the VSe and SePb. These results show that due an enhanced in the electronic density of states (DOS) near the Fermi energy, the defective PbSe and PbTe are candidates for efficient TE devices.
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Homo-oligofluorenes (OFn), polyfluorenes (PF2/6) and oligofluorenes with one fluorenenone group in the center (OFnK) were synthesized. They were used as model compounds to understand of the structure-property relationships of polyfluorenes and the origin of the green emission in the photoluminescence (after photooxidation of the PFs) and the electroluminescence (EL) spectra. The electronic, electrochemical properties, thermal behavior, supramolecular self-assembly, and photophysical properties of OFn, PF2/6 and OFnK were investigated. Oligofluorenes with 2-ethylhexyl side chain (OF2-OF7) from the dimer up to the heptamer were prepared by a series of stepwise transition metal mediated Suzuki and Yamamoto coupling reactions. Polyfluorene was synthesized by Yamamoto coupling of 2,7-dibromo-9,9-bis(2-ethylhexyl)fluorene. Oligofluorenes with one fluorenone group in the center (OF3K, OF5K, OF7K) were prepared by Suzuki coupling between the monoboronic fluorenyl monomer, dimer, trimer and 2, 7-dibromofluorenone. The electrochemical and electronic properties of homo-oligofluorenes (OFn) were systematically studied by several combined techniques such as cyclic voltammetry, differential pulse voltammetry, UV-vis absorption spectroscopy, steady and time-resolved fluorescence spectroscopy. It was found that the oligofluorenes behave like classical conjugated oligomers, i.e., with the increase of the chain-length, the corresponding oxidation potential, the absorption and emission maximum, ionization potential, electron affinity, band gap and the photoluminescence lifetime displayed a very good linear relation with the reciprocal number of the fluorene units (1/n). The extrapolation of these linear relations to infinite chain length predicted the electrochemical and electronic properties of the corresponding polyfluorenes. The thermal behavior, single-crystal structure and supramolecular packing, alignment properties, and molecular dynamics of the homo-oligofluorenes (OFn) up to the polymer were studied using techniques such as TGA, DSC, WAXS, POM and DS. The OFn from tetramer to heptamer show a smectic liquid crystalline phase with clearly defined isotropization temperature. The oligomers do show a glass transition which exhibits n-1 dependence and allows extrapolation to a hypothetical glass transition of the polymer at around 64 °C. A smectic packing and helix-like conformation for the oligofluorenes from tetramer to heptamer was supported by WAXS experiments, simulation, and single-crystal structure of some oligofluorene derivatives. Oligofluorenes were aligned more easily than the corresponding polymer, and the alignability increased with the molecular length from tetramer to heptamer. The molecular dynamics in a series of oligofluorenes up to the polymer was studied using dielectric spectroscopy. The photophysical properties of OFn and PF2/6 were investigated by the steady-state spectra (UV-vis absorption and fluorescence spectra) and time-resolved fluorescence spectra both in solution and thin film. The time-resolved fluorescence spectra of the oligofluorenes were measured by streak camera and gate detection technique. The lifetime of the oligofluorenes decreased with the extension of the chain-length. No green emission was observed in CW, prompt and delayed fluorescence for oligofluorenes in m-THF and film at RT and 77K. Phosphorescence was observed for oligofluorenes in frozen dilute m-THF solution at 77K and its lifetime increased with length of oligofluorenes. A linear relation was obtained for triplet energy and singlet energy as a function of the reciprocal degree of polymerization, and the singlet-triplet energy gap (S1-T1) was found to decrease with the increase of degree of polymerization. Oligofluorenes with one fluorenone unit at the center were used as model compounds to understand the origin of the low-energy (“green”) emission band in the photoluminescence and electroluminescence spectra of polyfluorenes. Their electrochemical properties were investigated by CV, and the ionization potential (Ip) and electron affinity (Ea) were calculated from the onset of oxidation and reduction of OFnK. The photophysical properties of OFnK were studied in dilute solution and thin film by steady-state spectra and time-resolved fluorescence spectra. A strong green emission accompanied with a weak blue emission were obtained in solution and only green emission was observed on film. The strong green emission of OFnK suggested that rapid energy transfer takes place from higher energy sites (fluorene segments) to lower energy sites (fluorenone unit) prior to the radiative decay of the excited species. The fluorescence spectra of OFnK also showed solvatochromism. Monoexponential decay behaviour was observed by time-resolved fluorescence measurements. In addition, the site-selective excitation and concentration dependence of the fluorescence spectra were investigated. The ratio of green and blue emission band intensities increases with the increase of the concentration. The observed strong concentration dependence of the green emission band in solution suggests that increased interchain interactions among the fluorenone-containing oligofluorene chain enhanced the emission from the fluorenone defects at higher concentration. On the other hand, the mono-exponential decay behaviour and power dependence were not influenced significantly by the concentration. We have ruled out the possibility that the green emission band originates from aggregates or excimer formation. Energy transfer was further investigated using a model system of a polyfluorene doped by OFnK. Förster-type energy transfer took place from PF2/6 to OFnK, and the energy transfer efficiency increased with increasing of the concentration of OFnK. Efficient funneling of excitation energy from the high-energy fluorene segments to the low-energy fluorenone defects results from energy migration by hopping of excitations along a single polymer chain until they are trapped on the fluorenone defects on that chain or transferred onto neighbouring chains by Förster-type interchain energy transfer process. These results imply that the red-shifted emission in polyfluorenes can originate from (usually undesirable) keto groups at the bridging carbon atoms-especially if the samples have been subject to photo- or electro-oxidation or if fluorenone units are present due to an improper purification of the monomers prior to polymerization.
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A Micro-opto-mechanical systems (MOMS) based technology for the fabrication of ultrasonic probes on optical fiber is presented. Thanks to the high miniaturization level reached, the realization of an ultrasonic system constituted by ultrasonic generating and detecting elements, suitable for minimally invasive applications or Non Destructive Evaluation (NDE) of materials at high resolution, is demonstrated. The ultrasonic generation is realized by irradiating a highly absorbing carbon film patterned on silicon micromachined structures with a nanosecond pulsed laser source, generating a mechanical shock wave due to the thermal expansion of the film induced by optical energy conversion into heat. The short duration of the pulsed laser, together with an appropriate emitter design, assure high frequency and wide band ultrasonic generation. The acoustic detection is also realized on a MOMS device using an interferometric receiver, fabricated with a Fabry-Perot optical cavity realized by means of a patterned SU-8 and two Al metallization levels. In order to detect the ultrasonic waves, the cavity is interrogated by a laser beam measuring the reflected power with a photodiode. Various issues related to the design and fabrication of these acoustic probes are investigated in this thesis. First, theoretical models are developed to characterize the opto-acoustic behavior of the devices and estimate their expected acoustic performances. Tests structures are realized to derive the relevant physical parameters of the materials constituting the MOMS devices and determine the conditions theoretically assuring the best acoustic emission and detection performances. Moreover, by exploiting the models and the theoretical results, prototypes of acoustic probes are designed and their fabrication process developed by means of an extended experimental activity.
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Graphene excellent properties make it a promising candidate for building future nanoelectronic devices. Nevertheless, the absence of an energy gap is an open problem for the transistor application. In this thesis, graphene nanoribbons and pattern-hydrogenated graphene, two alternatives for inducing an energy gap in graphene, are investigated by means of numerical simulations. A tight-binding NEGF code is developed for the simulation of GNR-FETs. To speed up the simulations, the non-parabolic effective mass model and the mode-space tight-binding method are developed. The code is used for simulation studies of both conventional and tunneling FETs. The simulations show the great potential of conventional narrow GNR-FETs, but highlight at the same time the leakage problems in the off-state due to various tunneling mechanisms. The leakage problems become more severe as the width of the devices is made larger, and thus the band gap smaller, resulting in a poor on/off current ratio. The tunneling FET architecture can partially solve these problems thanks to the improved subthreshold slope; however, it is also shown that edge roughness, unless well controlled, can have a detrimental effect in the off-state performance. In the second part of this thesis, pattern-hydrogenated graphene is simulated by means of a tight-binding model. A realistic model for patterned hydrogenation, including disorder, is developed. The model is validated by direct comparison of the momentum-energy resolved density of states with the experimental angle-resolved photoemission spectroscopy. The scaling of the energy gap and the localization length on the parameters defining the pattern geometry is also presented. The results suggest that a substantial transport gap can be attainable with experimentally achievable hydrogen concentration.
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In this study, the use of the discotic liquid crystalline HBCs and conjugated polymers based on 2,7-carbazole were investigated in detail as donor materials in organic bulk-heterojunction solar cells. It has been shown that they perform efficiently in photovoltaic devices in combination with suitable acceptors. The efficiency was found to depend strongly dependent on the morphology of the film. By investigation of a series of donor materials with similar molecular structures based on both discotic molecules and conjugated polymers, a structure-performance relation was established, which is not only instructive for these materials but also serves as a guideline for improved molecular design. For the series of HBCs used in this study, it is found that the device efficiency decreases with increasing length of the alkyl substituents in the HBC. Thus, the derivative with the smallest alkyl mantle, being more crystalline compared to the HBCs with longer alkyl chains, gave the highest EQE of 12%. A large interfacial separation was found in the blend of HBC-C6,2 and PDI, since the crystallization of the acceptor occurred in a solid matrix of HBC. This led to small dispersed organized domains and benefited the charge transport. In contrast, blends of HBC-C10,6/PDI or HBC-C14,10/PDI revealed a rather homogeneous film limiting the percolation pathways due to a mixed phase. For the first time, poly(2,7-carbazole) was incorporated as a donor material in solar cells using PDI as an electron acceptor. The good fit in orbital energy levels and absorption spectra led to high efficiency. This result indicates that conjugated polymers with high band-gap can also be applied as materials to build efficient solar cells if appropriate electron acceptors are chosen. In order to enhance the light absorption ability, new ladder-type polymers based on pentaphenylene and hexaphenylene with one and three nitrogen bridges per repeat unit have been synthesized and characterized. The polymer 2 with three nitrogen bridges showed more red-shifted absorbance and emission and better packing in the solid-state than the analogous polymer 3 with only one nitrogen bridge per monomer unit. An overall efficiency as high as 1.3% under solar light was obtained for the device based on 1 and PDI, compared with 0.7% for the PCz based device. Therefore, the device performance correlates to a large extent with the solar light absorption ability and the lateral distance between conjugated polymer chains. Since the lateral distance is determined by the length and number of attached alkyl side chains, it is possible to assume that these substituents insulate the charge carrier pathways and decrease the device performance. As an additional consequence, the active semiconductor is diluted in the insulating matrix leading to a lower light absorption. This work suggests ways to improve device performance by molecular design, viz. maintaining the HOMO level while bathochromically shifting the absorption by adopting a more rigid ladder-type structure. Also, a high ratio of nitrogen bridges with small alkyl substituents was a desirable feature both in terms of adjusting the absorption and maintaining a low lateral inter-chain separation, which was necessary for obtaining high current and efficiency values.
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Ausgehend von der Entdeckung der reversiblen Strukturierung mittels Rastersondenmethoden im Phasensystem Na2O/V2O5/P2O5 wurden im Rahmen dieser Arbeit zwei Ansatzpunkte verfolgt. Einerseits sollten mittels der Schmelzflußelektrolyse einige bereits existierende niederdimensionale Molybdänbronzen mit bekannten elektronischen Übergängen in ausreichend großen Kristallen gezüchtet werden, um sie auf ihre Strukturierungseigenschaften hin zu untersuchen. Gleichzeitig sollte durch Variation versucht werden, neue, bisher unbekannte Bronzen oder reduzierte Oxide zu synthetisieren und charakterisieren. Der zweite Schwerpunkt dieser Arbeit lag in der Synthese und Charakterisierung von Oxidchalkogeniden, bestehend aus einem Seltenerdmetall und einem 3d-Metall von Titan bis hin zu den mittleren Übergangsmetallen. Diese Verbindungen können durch die Kombination der jeweiligen Eigenschaften der oxidischen und chalkogeniden Teilstrukturen völlig neue elektronische und/oder magnetische Eigenschaften aufweisen. Mögliche auftretende Phasenübergänge sind wiederum für Strukturierungsversuche interessant. Die zu den Oxidchalkogeniden durchgeführten Untersuchungen ergaben im Phasensystem Ln/Ti/S/O (Ln = Lanthanoide) insgesamt sechs Verbindungen. Zwei von ihnen, La8Ti9S24O4 und Nd20Ti11S44O6, besitzen als gemeinsames Strukturelement tetranukleare [Ti4(u4-S)2(u2-O)4]-Cluster, bestehend aus vier miteinander über gemeinsame Flächen kondensierte TiS4O2-Oktaeder. Die Titanpositionen innerhalb der Cluster sind mit Ti+3-Ionen besetzt. Beide Verbindungen weisen in einem Temperaturbereich zwischen 150 K und 250 K eine deutlich ausgeprägte Hysterese der magnetischen Suszeptibilität auf, die sich im Falle von La8Ti9S24O4 auf einen Jahn-Teller-Übergang zurückführen läßt. Daneben konnte erstmals eine Serie oxidisch/sulfidisch gemischter Ruddlesden-Popper-Verbindungen mit Ln2Ti2S2O5 (Ln = Pr, Nd, Sm) synthetisiert und charakterisiert werden. Titan liegt als vierwertiges Ion in aus TiSO5-Oktaedern gebildeten Perowskit-Doppelschichten vor. Die neunfach koordinierten Positionen sind mit den Seltenerdmetallionen gefüllt, die zwölffach koordinierten Lagen sind unbesetzt. Bei dem sechsten erhaltene Titanoxidsulfid, La4TiS6.5O1.5, handelt es sich um einen Halbleiter mit einer Bandlücke von etwa 2 eV. Weiterhin gelang es, die Serie Ln2M3S2O8 (Ln = La, Ce, Pr, Nd, Sm; M = Nb, Ta) zu synthetisieren und in ihren physikalischen Eigenschaften zu charakterisieren. Es handelt sich ausnahmslos um Halbleiter mit Bandlücken zwischen E=0.125 eV für La2Nb3S2O8 und E=0.222 eV für Pr2Ta3S2O8. Die Struktur der Oxidsulfide Ce2Ta3S2O8, Pr2Ta3S2O8, Nd2Nb3S2O8 sowie Sm2Ta3S2O8 weist im Gegensatz zu den anderen Verbindungen eine Fehlordnung eines der beiden kristallographisch unabhängigen Nb- bzw. Ta-Atome auf. Daraus resultiert eine Symmetrieerniedrigung von Pnma zu Pbam. Der Einsatz von Europium führte zu einer neuen Modifikation des bronzoiden Oxids EuTa2O6, in der das Europium als Eu+2 vorliegt, wie 151Eu-Mößbauer-Untersuchungen bestätigten. Vor der Durchführung der Kristallzüchtungen mittels der Schmelzflußelektrolysen mußten die benutzen Öfen und Elektrolysezellen geplant und angefertigt werden. Es konnten dann verschiedene blaue, rote und violette Moybdänbronzen (sowie La2Mo2O7) in Kristallen bis zu 25 mm Länge dargestellt werden. Ferner gelang die erste exakte Einkristalluntersuchung der roten Bronze Rb0.33MoO3. Sie verfügt über die höchste d-Elektronen-Lokalisierungsrate aller bekannten roten Bronzen. Die erhaltenen Bronzen wurden teilweise von der Arbeitsgruppe Fuchs, Physikalisches Institut der Westfälischen Wilhelms-Universität Münster, auf ihre Nanostrukturierbarkeit hin untersucht. Dabei ergaben sich zwei verschiedene Strukturierungsmechanismen. Sind es im Fall der blauen Alkalimetall-Molybdänbronzen ausschließlich Lochstrukturen, die entstehen, handelt es sich bei La2Mo2O7 um Hügelstrukturen. Mittels der Schmelzflußelektrolyse konnte auch das gemischtvalente Alkalimetall-Eisenmolybdat NaFe2(MoO4)3 synthetisiert werden. Daneben gelang die Synthese dreier weiterer Alkalimetall-Eisenmolybdate: Cs2Fe2(MoO4)3, NaFe4(MoO4)5 und CsFe5(MoO4)7. Bis auf Cs2Fe2(MoO4)3, welches in der bekannten Langbeinit-Struktur kristallisiert, handelt es sich bei den übrigen Alkalimetall-Eisenmolybdaten um völlig neuartige Käfigverbindungen, bzw. bei CsFe5(MoO4)7 um eine Tunnelverbindung. Die Kristallstrukturen beinhalten kondensierte FeO6-Oktaeder. Im Fall von NaFe2(MoO4)3 lassen sich [Fe2O10]-Einheiten, für NaFe4(MoO4)5 [Fe2O10]- sowie [Fe3O14]-Einheiten, und für CsFe5(MoO4)7 [Fe4O18]-Baueinheiten beobachten. Die Positionen der Fe+2- und Fe+3-Atome in NaFe4(MoO4)5 wurden mit Hilfe einer 57Fe-Mößbauer-Untersuchung bestimmt.
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In dieser Arbeit werden vier unterschiedliche, stark korrelierte, fermionische Mehrbandsysteme untersucht. Es handelt sich dabei um ein Mehrstörstellen-Anderson-Modell, zwei Hubbard-Modelle sowie ein Mehrbandsystem, wie es sich aus einer ab initio-Beschreibung für ein korreliertes Halbmetall ergibt.rnrnDie Betrachtung des Mehrstörstellen-Anderson-Modells konzentriert sich auf die Untersuchung des Einflusses der Austauschwechselwirkung und der nicht-lokalen Korrelationen zwischen zwei Störstellen in einem einfach-kubischen Gitter. Das zentrale Resultat ist die Abstandsabhängigkeit der Korrelationen der Störstellenelektronen, welche stark von der Gitterdimension und der relativen Position der Störstellen abhängen. Bemerkenswert ist hier die lange Reichweite der Korrelationen in der Diagonalrichtung des Gitters. Außerdem ergibt sich, dass eine antiferromagnetische Austauschwechselwirkung ein Singulett zwischen den Störstellenelektronen gegenüber den Kondo-Singuletts der einzelnen Störstellen favorisiert und so den Kondo-Effekt der einzelnen Störstellen behindert.rnrnEin Zweiband-Hubbard-Modell, das Jz-Modell, wird im Hinblick auf seine Mott-Phasen in Abhängigkeit von Dotierung und Kristallfeldaufspaltung auf dem Bethe-Gitter untersucht. Die Entartung der Bänder ist durch eine unterschiedliche Bandbreite aufgehoben. Wichtigstes Ergebnis sind die Phasendiagramme in Bezug auf Wechselwirkung, Gesamtfüllung und Kristallfeldparameter. Im Vergleich zu Einbandmodellen kommen im Jz-Modell sogenannte orbital-selektive Mott-Phasen hinzu, die, abhängig von Wechselwirkung, Gesamtfüllung und Kristallfeldparameter, einerseits metallischen und andererseits isolierenden Charakter haben. Ein neuer Aspekt ergibt sich durch den Kristallfeldparameter, der die ionischen Einteilchenniveaus relativ zueinander verschiebt, und für bestimmte Werte eine orbital-selektive Mott-Phase des breiten Bands ermöglicht. Im Vergleich mit analytischen Näherungslösungen und Einbandmodellen lassen sich generische Vielteilchen- und Korrelationseffekte von typischen Mehrband- und Einteilcheneffekten differenzieren.rnrnDas zweite untersuchte Hubbard-Modell beschreibt eine magneto-optische Falle mit einer endlichen Anzahl Gitterplätze, in welcher fermionische Atome platziert sind. Es wird eine z-antiferromagnetische Phase unter Berücksichtigung nicht-lokaler Vielteilchenkorrelationen erhalten, und dabei werden bekannte Ergebnisse einer effektiven Einteilchenbeschreibung verbessert.rnrnDas korrelierte Halbmetall wird im Rahmen einer Mehrbandrechnung im Hinblick auf Korrelationseffekte untersucht. Ausgangspunkt ist eine ab initio-Beschreibung durch die Dichtefunktionaltheorie (DFT), welche dann durch die Hinzunahme lokaler Korrelationen ergänzt wird. Die Vielteilcheneffekte werden an Hand einer einfachen Wechselwirkungsnäherung verdeutlicht, und für ein Wechselwirkungsmodell in sphärischer Symmetrie präzisiert. Es ergibt sich nur eine schwache Quasiteilchenrenormierung. Besonders für röntgenspektroskopische Experimente wird eine gute Übereinstimmung erzielt.rnrnDie numerischen Ergebnisse für das Jz-Modell basieren auf Quanten-Monte-Carlo-Simulationen im Rahmen der dynamischen Molekularfeldtheorie (DMFT). Für alle anderen Systeme wird ein Mehrband-Algorithmus entwickelt und implementiert, welcher explizit nicht-diagonale Mehrbandprozesse berücksichtigt.rnrn