Numerical study of graphene as a channel material for field-effect transistors
Contribuinte(s) |
Rudan, Massimo |
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Data(s) |
06/05/2011
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Resumo |
Graphene excellent properties make it a promising candidate for building future nanoelectronic devices. Nevertheless, the absence of an energy gap is an open problem for the transistor application. In this thesis, graphene nanoribbons and pattern-hydrogenated graphene, two alternatives for inducing an energy gap in graphene, are investigated by means of numerical simulations. A tight-binding NEGF code is developed for the simulation of GNR-FETs. To speed up the simulations, the non-parabolic effective mass model and the mode-space tight-binding method are developed. The code is used for simulation studies of both conventional and tunneling FETs. The simulations show the great potential of conventional narrow GNR-FETs, but highlight at the same time the leakage problems in the off-state due to various tunneling mechanisms. The leakage problems become more severe as the width of the devices is made larger, and thus the band gap smaller, resulting in a poor on/off current ratio. The tunneling FET architecture can partially solve these problems thanks to the improved subthreshold slope; however, it is also shown that edge roughness, unless well controlled, can have a detrimental effect in the off-state performance. In the second part of this thesis, pattern-hydrogenated graphene is simulated by means of a tight-binding model. A realistic model for patterned hydrogenation, including disorder, is developed. The model is validated by direct comparison of the momentum-energy resolved density of states with the experimental angle-resolved photoemission spectroscopy. The scaling of the energy gap and the localization length on the parameters defining the pattern geometry is also presented. The results suggest that a substantial transport gap can be attainable with experimentally achievable hydrogen concentration. |
Formato |
application/pdf |
Identificador |
http://amsdottorato.unibo.it/3873/1/grassi_roberto_tesi.pdf urn:nbn:it:unibo-2739 Grassi, Roberto (2011) Numerical study of graphene as a channel material for field-effect transistors, [Dissertation thesis], Alma Mater Studiorum Università di Bologna. Dottorato di ricerca in Ingegneria elettronica, informatica e delle telecomunicazioni <http://amsdottorato.unibo.it/view/dottorati/DOT323/>, 23 Ciclo. DOI 10.6092/unibo/amsdottorato/3873. |
Idioma(s) |
en |
Publicador |
Alma Mater Studiorum - Università di Bologna |
Relação |
http://amsdottorato.unibo.it/3873/ |
Direitos |
info:eu-repo/semantics/openAccess |
Palavras-Chave | #ING-INF/01 Elettronica |
Tipo |
Tesi di dottorato NonPeerReviewed |